Diodes DIP Type Bridge Rectifier GBU10005 ~ GBU1010 DIP ■ Features .880(22.3) .860(21.8) .160(4.1) .140(3.5) ● Io=10A ● VRRM 50V-1000V .140(3.56) .130(3.30) .310(7.90) .290(7.40) ● Glass passivated chip .740(18.8) .720(18.3) ● High surge forward current capability .085(2.16) .065(1.65) - AC + .080(2.03) .060(1.52) .104(2.66) .094(2.40) .100(2.54) .081(2.06) .710(18.0) .690(17.5) .050(1.27) .040(1.02) .210(5.33) .190(4.83) .210(5.33) .190(4.83) .022(0.56) .018(0.46) .210(5.33) .190(4.83) Dimensions in inches and (millimeters) ■ Absolute Maximum Ratings Ta = 25℃ Item Symbol Repetitive peak Reverse Voltage 005 01 02 04 06 08 10 50 100 200 400 600 800 1000 VRRM Dielectric Strength 2 Vdis Average Rectified Output Current 60Hz sine wave,R-load GBU10 Ta=80℃ I 2t 166 Thermal Resistance Junction to Ambient RthJA 25 Thermal Resistance Junction to Case RthJC 2.3 Junction Temperature Tj 150 Storage Temperature Tstg -55 to 150 1ms≤t<8.3ms Rating of per diode KV 10 200 Current Squared Time V 3.6 Io IFSM Surge(Non-repetitive) Forward Current Unit A A2 S ℃ /W ℃ ■ Electrical Characteristics Ta = 25℃ Parameter Reverse breakdown voltage Symbol VR Test Conditions IR =100uA GBU10 Min 005 50 01 100 02 200 04 400 06 600 08 800 10 1000 Typ Max Unit V Forward voltage VFM IF= 5A 1.1 Reverse voltage leakage current IRRM VRM=VRRM d 10 uA www.kexin.com.cn 1 Diodes DIP Type Bridge Rectifier GBU10005 ~ GBU1010 ■ Typical Characterisitics IFSM(A) 10 FIG2:Surge Forward Current Capadility 300 sine wave 0 8 IFSM Io(A) FIG1:Io-Tc Curve 11 8.3ms 8.3ms Tc heatsink 1cycle 200 non-repetitive Tj=25 ℃ 6 4 100 sine wave R-load with heatsink 2 80 90 100 110 120 130 140 150 FIG3: Forward Voltage 60 0 160 Tc( ℃ ) IR(uA) IF(A) 0 70 40 1 2 5 10 20 50 100 Number of Cycles FIG4:Typical Reverse Characteristics 100 Tj=150℃ 20 10 10 5.0 1.0 Ta=25℃ 1.0 Tj=25℃ 0.1 0.5 0.2 0.1 2 0.4 0.6 0.8 www.kexin.com.cn 1.0 1.2 1.4 VF(V) 0.01 0 20 40 60 80 100 Voltage(%)