MOSFET SMD Type P-Channel MOSFET AO4409-HF (KO4409-HF) SOP-8 ■ Features ● VDS (V) =-30V ● ID =-15 A (VGS =-10V) ● RDS(ON) ＜ 7.5mΩ (VGS =-10V) 1.50 0.15 ● RDS(ON) ＜ 12mΩ (VGS =-4.5V) 0.21 -0.02 +0.04 ● Pb−Free Package May be Available. The G−Suffix Denotes a Pb−Free Lead Finish 1 2 3 4 Source Source Source Gate 5 6 7 8 Drain Drain Drain Drain D G S ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Drain-Source Voltage VDS -30 Gate-Source Voltage VGS ±20 Continuous Drain Current TA=25°C TA=70°C Pulsed Drain Current IDM Avalanche Current Avalanche energy Power Dissipation Thermal Resistance.Junction- to-Ambient Thermal Resistance.Junction- to-Lead ID L=0.1mH TA=25°C TA=70°C t ≤ 10s Steady-State -12.8 -80 IAS,IAR 30 135 RthJA V -15 EAS,EAR PD Unit 3.1 2 A mJ W 40 75 RthJL 24 Junction Temperature TJ 150 Junction Storage Temperature Range Tstg -55 to 150 ℃/W ℃ www.kexin.com.cn 1 MOSFET SMD Type P-Channel MOSFET AO4409-HF (KO4409-HF) ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Drain-Source Breakdown Voltage VDSS Zero Gate Voltage Drain Current IDSS Gate-Body leakage current Gate Threshold Voltage IGSS VGS(th) Test Conditions Min Typ ID=-250μA, VGS=0V VDS=-30V, VGS=0V -5 VDS=-30V, VGS=0V, TJ=55℃ -25 VDS=0V, VGS=±20V -1.4 VDS=VGS ID=-250μA RDS(On) VGS=-10V, ID=-15A Forward Transconductance ID(ON) gFS Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Gate resistance Rg Total Gate Charge (10V) Total Gate Charge (4.5V) -80 VDS=-5V, ID=-15A 35 50 5270 VGS=0V, VDS=-15V, f=1MHz VGS=0V, VDS=0V, f=1MHz VGS=-10V, VDS=-15V, ID=-15A 2 3 120 51.5 td(on) 14 VGS=-10V, VDS=-15V, RL=1Ω, RGEN=3Ω tf trr Qrr Maximum Body-Diode Continuous Current IS Diode Forward Voltage VSD 16.5 Marking 2 4409 KC**** F www.kexin.com.cn ns 76.5 37.5 IF=-15A, dI/dt=100A/us 36.7 45 28 IS=-1A,VGS=0V Note : The static characteristics in Figures 1 to 6 are obtained using <300 μs pulses, duty cycle 0.5% max. ■ Marking Ω nC 14.5 Turn-On DelayTime Body Diode Reverse Recovery Time pF 100 23 Body Diode Reverse Recovery Charge 6400 745 Qgd Turn-Off Fall Time mΩ S 945 Gate Drain Charge tr V A Qgs td(off) nA -2.7 12 VGS=-10V, VDS=-5V Gate Source Charge Turn-On Rise Time ±100 11.5 TJ=125℃ Qg Turn-Off DelayTime uA 7.5 VGS=-4.5V, ID=-10A On state drain current Unit V VGS=-10V, ID=-15A Static Drain-Source On-Resistance Max -30 nC -5 A -1 V MOSFET SMD Type P-Channel MOSFET AO4409-HF (KO4409-HF) ■ Typical Characterisitics 60 60 -4V -4.5V 50 VDS=-5V 50 -6V 40 -10V 30 -ID(A) -ID (A) 40 -3.5V 30 125°C 20 20 25°C 10 10 VGS=-3V 0 0 0 1 2 3 4 0 5 12 1.5 2 2.5 3 3.5 4 1.6 Normalized On-Resistance VGS=-4.5V 10 RDS(ON) (mΩ ) 1 -VGS(Volts) Figure 2: Transfer Characteristics (Note E) -VDS (Volts) Fig 1: On-Region Characteristics (Note E) 8 6 VGS=-10V 4 ID=-15A VGS=-10V 1.4 1.2 VGS=-4.5V 1 0.8 2 0 5 10 15 20 0 25 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature (Note E) 1.0E+02 20 ID=-15A 15 1.0E+01 1.0E+00 125°C 10 -IS (A) RDS(ON) (mΩ ) 0.5 25°C 125°C 1.0E-01 1.0E-02 25°C 1.0E-03 5 1.0E-04 1.0E-05 0 2 4 6 8 10 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) www.kexin.com.cn 3 MOSFET SMD Type P-Channel MOSFET AO4409-HF (KO4409-HF) ■ Typical Characterisitics 10 8 7000 Ciss 6000 Capacitance (pF) -VGS (Volts) 8000 VDS=-15V ID=-15A 6 4 5000 4000 3000 Coss 2000 2 1000 0 Crss 0 0 20 40 60 80 100 Qg (nC) Figure 7: Gate-Charge Characteristics 120 0 5 10 15 20 25 -VDS (Volts) Figure 8: Capacitance Characteristics 30 10000 1000.0 TA=25°C 10.0 10µs RDS(ON) limited 100µs 1ms 1.0 10ms TJ(Max)=150°C TA=25°C 0.1 1000 Power (W) -ID (Amps) 100.0 10 10s DC 0.0 0.01 0.1 1 -VDS (Volts) 10 1 100 0.00001 10 Zθ JA Normalized Transient Thermal Resistance 0.001 0.1 1000 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=75°C/W 0.1 PD 0.01 Single Pulse Ton 0.001 0.00001 0.0001 0.001 0.01 0.1 1 T 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) 4 10 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note F) Figure 9: Maximum Forward Biased. Safe Operating Area (Note F) 1 100 www.kexin.com.cn 100 1000