LRC MMUN2238LT1 Bias resistor transistor Datasheet

LESHAN RADIO COMPANY, LTD.
Bias Resistor Transistor
NPN Silicon Surface Mount Transistor
with Monolithic Bias Resistor Network
MMUN2211LT1
Series
MMUN2211LT1
SERIES
This new series of digital transistors is designed to replace a single
device and its external resistor bias network. The BRT (Bias Resistor
Transistor) contains a single transistor with a monolithic bias network
consisting of two resistors; a series base resistor and a base-emitter
resistor. The BRT eliminates these individual components by
integrating them into a single device. The use of a BRT can reduce
both system cost and board space. The device is housed in the SOT-23
package which is designed for low power surface mount applications.
• Simplifies Circuit Design
• Reduces Board Space and Component Count
• The SOT-23 package can be soldered using wave or reflow. The
•
3
1
2
CASE 318, STYLE 6
SOT–23 (TO–236AB)
PIN 3
(INPUT)
modified gull-winged leads absorb thermal stress during soldering
eliminating the possibility of damage to the die.
Available in 8 mm embossed tape and reel. Use the Device
Number to order the 7 inch/3000 unit reel. Replace “T1” with
“T3” in the Device Number to order the13 inch/10,000 unit reel.
R2
MARKINGDIAGRAM
A6x
Symbol
Value
Unit
Collector-Base Voltage
VCBO
50
Vdc
Collector-Emitter Voltage
VCEO
50
Vdc
Collector Current
IC
100
mAdc
Total Power Dissipation @ TA = 25°C
(Note 1.) Derate above 25°C
PD
*200
1.6
mW
mW/°C
PIN 2
EMITTER
(GROUND)
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Rating
COLLECTOR
(OUTPUT)
R1
PIN 1
BASE
M
A6x = Device Marking
x
M
= A – L(See Page 2)
= Date Code
ORDERING INFORMATION
Device
Package
Shipping
MMUN2211LT1
SOT–23
3000/Tape & Reel
DEVICE MARKING AND RESISTOR VALUES
Device
Marking
R1(K)
R2(K)
MMUN2211LT1
A8A
10
10
MMUN2212LT1
SOT–23
3000/Tape & Reel
MMUN2212LT1
A8B
22
22
MMUN2213LT1
SOT–23
3000/Tape & Reel
MMUN2213LT1
A8C
47
47
MMUN2214LT1
SOT–23
3000/Tape & Reel
MMUN2214LT1
A8D
10
47
MMUN2215LT1
SOT–23
3000/Tape & Reel
MMUN2215LT1
A8E
10
∞
MMUN2216LT1
SOT–23
3000/Tape & Reel
MMUN2216LT1
A8F
4.7
∞
MMUN2230LT1
SOT–23
3000/Tape & Reel
MMUN2230LT1
A8G
1.0
1.0
MMUN2231LT1
A8H
2.2
2.2
MMUN2231LT1
SOT–23
3000/Tape & Reel
MMUN2232LT1
A8J
4.7
4.7
MMUN2232LT1
SOT–23
3000/Tape & Reel
MMUN2233LT1
A8K
4.7
47
MMUN2233LT1
SOT–23
3000/Tape & Reel
MMUN2234LT1
A8L
22
47
MMUN2234LT1
SOT–23
3000/Tape & Reel
MMUN2235LT1
A8M
2.2
47
MMUN2235LT1
SOT–23
3000/Tape & Reel
MMUN2238LT1
A8R
2.2
∞
MMUN2238LT1
SOT–23
3000/Tape & Reel
MMUN2241LT1
A8U
100
∞
MMUN2241LT1
SOT–23
3000/Tape & Reel
1. Device mounted on a FR-4 glass epoxy printed circuit board using the
minimum recommended footprint.
MMUN2211S-1/11
LESHAN RADIO COMPANY, LTD.
MMUN2211LT1 Series
THERMAL CHARACTERISTICS
Rating
Thermal Resistance – Junction-to-Ambient (surface mounted)
Operating and Storage Temperature Range
Symbol
Value
Unit
RθJA
625
°C/W
TJ, Tstg
–65 to +150
°C
TL
260
10
°C
Sec
Maximum Temperature for Soldering Purposes,
Time in Solder Bath
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Symbol
Min
Typ
Max
Unit
Collector-Base Cutoff Current (VCB = 50 V, IE = 0)
ICBO
–
–
100
nAdc
Collector-Emitter Cutoff Current (VCE = 50 V, IB = 0)
ICEO
–
–
500
nAdc
IEBO
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
0.5
0.2
0.1
0.2
0.9
1.9
4.3
2.3
1.5
0.18
0.13
0.2
4.0
0.1
mAdc
Collector-Base Breakdown Voltage (IC = 10 µA, IE = 0)
V(BR)CBO
50
–
–
Vdc
Collector-Emitter Breakdown Voltage (Note 2.), (IC = 2.0 mA, IB = 0)
V(BR)CEO
50
–
–
Vdc
hFE
35
60
80
80
160
160
3.0
8.0
15
80
80
80
160
160
60
100
140
140
350
350
5.0
15
30
200
150
140
350
350
–
–
–
–
–
–
–
–
–
–
–
–
–
–
VCE(sat)
–
–
0.25
Characteristic
OFF CHARACTERISTICS
Emitter-Base Cutoff Current
(VEB = 6.0 V, IC = 0)
MMUN2211LT1
MMUN2212LT1
MMUN2213LT1
MMUN2214LT1
MMUN2215LT1
MMUN2216LT1
MMUN2230LT1
MMUN2231LT1
MMUN2232LT1
MMUN2233LT1
MMUN2234LT1
MMUN2235LT1
MMUN2238LT1
MMUN2241LT1
ON CHARACTERISTICS (Note 2.)
DC Current Gain
(VCE = 10 V, IC = 5.0 mA)
MMUN2211LT1
MMUN2212LT1
MMUN2213LT1
MMUN2214LT1
MMUN2215LT1
MMUN2216LT1
MMUN2230LT1
MMUN2231LT1
MMUN2232LT1
MMUN2233LT1
MMUN2234LT1
MMUN2235LT1
MMUN2238LT1
MMUN2241LT1
Collector-Emitter Saturation Voltage (IC = 10 mA, IB = 0.3 mA)
(IC = 10 mA, IB = 5 mA) MMUN2230LT1/MMUN2231LT1
(IC = 10 mA, IB = 1 mA) MMUN2215LT1/MMUN2216LT1
MMUN2232LT1/MMUN2233LT1/MMUN2234LT1/
MMUN2235LT1/MMUN2238LT1
Vdc
2. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%.
MMUN2211S–2/11
LESHAN RADIO COMPANY, LTD.
MMUN2211LT1 Series
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Typ
Max
Unit
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
VOH
4.9
–
–
Vdc
R1
7.0
15.4
32.9
7.0
7.0
3.3
0.7
1.5
3.3
3.3
15.4
1.54
1.54
70
10
22
47
10
10
4.7
1.0
2.2
4.7
4.7
22
2.2
2.2
100
13
28.6
61.1
13
13
6.1
1.3
2.9
6.1
6.1
28.6
2.86
2.88
130
kΩ
R1/R2
0.8
0.17
–
–
0.8
0.055
0.38
0.038
1.0
0.21
–
–
1.0
0.1
0.47
0.047
1.2
0.25
–
–
1.2
0.185
0.56
0.056
ON CHARACTERISTICS (Note 3.)
Output Voltage (on)
(VCC = 5.0 V, VB = 2.5 V, RL = 1.0 k Ω)
(VCC = 5.0 V, VB = 3.5 V, RL = 1.0 k Ω)
(VCC = 5.0 V, VB = 5.0 V, RL = 1.0 k Ω)
VOL
MMUN2211LT1
MMUN2212LT1
MMUN2214LT1
MMUN2215LT1
MMUN2216LT1
MMUN2230LT1
MMUN2231LT1
MMUN2232LT1
MMUN2233LT1
MMUN2234LT1
MMUN2235LT1
MMUN2238LT1
MMUN2213LT1
MMUN2241LT1
Output Voltage (off) (VCC = 5.0 V, VB = 0.5 V, RL = 1.0 k Ω)
(VCC = 5.0 V, VB = 0.050 V, RL = 1.0 k Ω )
MMUN2230LT1
(VCC = 5.0 V, VB = 0.25 V, RL = 1.0 k Ω )
MMUN2215LT1
MMUN2216LT1
MMUN2233LT1
MMUN2238LT1
Input Resistor
MMUN2211LT1
MMUN2212LT1
MMUN2213LT1
MMUN2214LT1
MMUN2215LT1
MMUN2216LT1
MMUN2230LT1
MMUN2231LT1
MMUN2232LT1
MMUN2233LT1
MMUN2234LT1
MMUN2235LT1
MMUN2238LT1
MMUN2241LT1
Resistor Ratio
MMUN2211LT1/MMUN2212LT1/MMUN2213LT1
MMUN2214LT1
MMUN2215LT1/MMUN2216LT1/MMUN2238LT1
MMUN2241LT1
MMUN2230LT1/MMUN2231LT1/MMUN2232LT1
MMUN2233LT1
MMUN2234LT1
MMUN2235LT1
Vdc
3. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%.
MMUN2211S–3/11
LESHAN RADIO COMPANY, LTD.
MMUN2211LT1 Series
200
VCE(sat), MAXIMUM COLLECTOR VOLTAGE
(VOLTS)
250
1
IC/IB = 10
TA = –25°C
25°C
75°C
0.1
150
100
0.01
RθJA= 625°C/W
50
0
–50
0
50
100
150
0.001
0
40
60
IC, COLLECTOR CURRENT (mA)
Figure 1. Derating Curve
Figure 2. VCE(sat) vs. IC
VCE = 10 V
TA = 75°C
25°C
–25°C
100
10
1
10
IC, COLLECTOR CURRENT (mA)
100
3
2
1
0
100
f = 1 MHz
lE = 0 A
TA = 25°C
0
VO = 0.2 V
Vin, INPUT VOLTAGE (VOLTS)
1
0.1
0.01
VO = 5 V
1
2
3
30
50
40
10
TA = –25°C
0
20
Figure 4. Output Capcitance
25°C
10
10
VR, REVERSE BIAS VOLTAGE (VOLTS)
75°C
0.001
80
4
1000
Figure 3. DC Current Gain
IC, COLLECTOR CURRENT (mA)
20
TA, AMBIENT TEMPERATURE (5°C)
Cob, CAPACITANCE (pF)
hFE, DC CURRENT GAIN (NORMALIZED)
PD, POWER DISSIPATION (MILLIWATTS)
TYPICAL ELECTRICAL CHARACTERISTICS
MMUN2211LT1
4
5
6
7
8
9
Vin, INPUT VOLTAGE (VOLTS)
Figure 5. Output Current vs. Input Voltage
10
TA = –25°C
25°C
75°C
1
0.1
0
40
10
20
30
IC, COLLECTOR CURRENT (mA)
Figure 6. Input Voltage vs. Output Current
MMUN2211S–4/11
50
LESHAN RADIO COMPANY, LTD.
MMUN2211LT1 Series
–
hFE, DC CURRENT GAIN (NORMALIZED)
VCE(sat), MAXIMUM COLLECTOR VOLTAGE
(VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS
MMUN2212LT1
1000
1
TA = –25°C
IC/IB = 10
25°C
75°C
0.1
0.01
0.001
0
20
60
40
IC, COLLECTOR CURRENT (mA)
80
VCE = 10 V
TA = 75°C
10
1
10
IC, COLLECTOR CURRENT (mA)
Figure 7. VCE(sat) vs. IC
IC, COLLECTOR CURRENT (mA)
f = 1 MHz
lE = 0 A
TA = 25°C
1
0
10
20
30
40
50
75°C
25°C
TA = –25°C
10
1
0.1
0.01
VO = 5 V
0.001
0
2
4
6
8
VR, REVERSE BIAS VOLTAGE (VOLTS)
Vin, INPUT VOLTAGE (VOLTS)
Figure 9. Output Capacitance
Figure 10. Output Current vs. Input Voltage
10
100
Vin, INPUT VOLTAGE (VOLTS)
Cob, CAPACITANCE (pF)
100
2
0
100
Figure 8. DC Current Gain
4
3
–25°C
25°C
100
VO = 0.2 V
TA = –25°C
10
75°C
25°C
1
0.1
0
10
20
30
40
50
IC, COLLECTOR CURRENT (mA)
Figure 11. Input Voltage vs. Output Current
MMUN2211S–5/11
LESHAN RADIO COMPANY, LTD.
MMUN2211LT1 Series
10
IC/IB = 10
1000
TA = –25°C
25°C
75°C
1
0.1
0.01
0
20
40
60
80
hFE, DC CURRENT GAIN (NORMALIZED)
VCE(sat), MAXIMUM COLLECTOR VOLTAGE
(VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS
MMUN2213LT1
25°C
–25°C
100
10
1
10
100
IC, COLLECTOR CURRENT (mA)
Figure 12. VCE(sat) vs. IC
Figure 13. DC Current Gain
100
0.8
IC, COLLECTOR CURRENT (mA)
f = 1 MHz
lE = 0 A
TA = 25°C
0.6
0.4
0.2
10
20
30
40
50
75°C
Figure 14. Output Capacitance
25°C
10
TA = –25°C
1
0.1
0.01
VO = 5 V
0.001
0
2
VR, REVERSE BIAS VOLTAGE (VOLTS)
4
6
8
Vin, INPUT VOLTAGE (VOLTS)
Figure 15. Output Current vs. Input Voltage
100
Vin, INPUT VOLTAGE (VOLTS)
Cob, CAPACITANCE (pF)
TA = 75°C
IC, COLLECTOR CURRENT (mA)
1
0
0
VCE = 10 V
VO = 0.2 V
TA = –25°C
25°C
75°C
10
1
0.1
0
10
20
30
40
IC, COLLECTOR CURRENT (mA)
50
Figure 16. Input Voltage vs. Output Current
MMUN2211S–6/11
10
LESHAN RADIO COMPANY, LTD.
MMUN2211LT1 Series
1
IC/IB = 10
TA = –25°C
25°C
0.1
75°C
0.01
0.001
0
20
40
60
IC, COLLECTOR CURRENT (mA)
80
hFE, DC CURRENT GAIN (NORMALIZED)
VCE(sat), MAXIMUM COLLECTOR VOLTAGE
(VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS
MMUN2214LT1
300
VCE = 10
TA = 75°C
250
25°C
200
–25°C
150
100
50
0
1
2
4
6 8 10 15 20 40 50 60 70 80 90 100
IC, COLLECTOR CURRENT (mA)
Figure 17. VCE(sat) vs. IC
Figure 18. DC Current Gain
100
f = 1 MHz
lE = 0 A
TA = 25°C
3
2.5
2
1.5
1
0.5
0
0
2
4 6 8 10 15 20 25 30 35 40 45 50
VR, REVERSE BIAS VOLTAGE (VOLTS)
Figure 19. Output Capacitance
75°C
25°C
TA = –25°C
10
VO = 5 V
1
0
2
4
6
8
Vin, INPUT VOLTAGE (VOLTS)
10
Figure 20. Output Current vs. Input Voltage
10
VO = 0.2 V
Vin, INPUT VOLTAGE (VOLTS)
Cob, CAPACITANCE (pF)
3.5
IC, COLLECTOR CURRENT (mA)
4
TA = –25°C
25°C
75°C
1
0.1
0
10
20
30
40
IC, COLLECTOR CURRENT (mA)
50
Figure 21. Input Voltage vs. Output Current
MMUN2211S–7/11
LESHAN RADIO COMPANY, LTD.
MMUN2211LT1 Series
TYPICAL ELECTRICAL CHARACTERISTICS
MMUN2232LT1
1000
VCE = 10 V
IC/IB =10
hFE, DC CURRENT GAIN
VCE(sat), MAXIMUM COLLECTOR
VOLTAGE (VOLTS)
1
TA = 75°C
0.1
25°C
–25°C
0.01
TA = 75°C
100
10
1
0.001
4
8
12
16
20
24
0
28
25
IC, COLLECTOR CURRENT (mA)
50
75
100
125
IC, COLLECTOR CURRENT (mA)
Figure 22. VCE(sat) vs. IC
Figure 23. DC Current Gain
6
IC, COLLECTOR CURRENT (mA)
100
f = 1 MHz
IE = 0 A
TA = 25°C
5
4
3
2
1
0
VO = 5 V
75°C
25°C
10
1
TA = –25°C
0.1
0.01
0
10
20
30
40
50
60
0
2
4
6
VR, REVERSE BIAS VOLTAGE (VOLTS)
Vin, INPUT VOLTAGE (VOLTS)
Figure 24. Output Capacitance
Figure 25. Output Current vs. Input Voltage
8
10
Vin, INPUT VOLTAGE (VOLTS)
Cob, CAPACITANCE (pF)
25°C
–25°C
VO = 0.2 V
TA = –25°C
75°C
1
0.1
0
25°C
10
20
IC, COLLECTOR CURRENT (mA)
30
Figure 26. Output Voltage vs. Input Current
MMUN2211S–8/11
LESHAN RADIO COMPANY, LTD.
MMUN2211LT1 Series
TYPICAL ELECTRICAL CHARACTERISTICS
MMUN2233LT1
1000
IC/IB = 10
0.1
hFE, DC CURRENT GAIN
VCE(sat), MAXIMUM COLLECTOR
VOLTAGE (VOLTS)
1
25°C
100
75°C
25°C
TA = –25°C
0.01
TA = –25°C
10
VCE = 10 V
1
0.001
2
7
12
17
22
27
1
32
100
10
IC, COLLECTOR CURRENT (mA)
IC, COLLECTOR CURRENT (mA)
Figure 27. VCE(sat) vs. IC
Figure 28. DC Current Gain
4
IC, COLLECTOR CURRENT (mA)
100
f = 1 MHz
IE = 0 A
TA = 25°C
3.5
3
2.5
2
1.5
1
0.5
0
75°C
TA = –25°C
10
1
0.1
25°C
VO = 5 V
0.01
0
10
20
30
40
50
60
0
2
4
6
VR, REVERSE BIAS VOLTAGE (VOLTS)
Vin, INPUT VOLTAGE (VOLTS)
Figure 29. Output Capacitance
Figure 30. Output Current vs. Input Voltage
8
10
VO = 0.2 V
Vin, INPUT VOLTAGE (VOLTS)
Cob, CAPACITANCE (pF)
75°C
TA = –25°C
25°C
75°C
1
0.1
0
12
18
6
24
IC, COLLECTOR CURRENT (mA)
30
Figure 31. Input Voltage vs. Output Current
MMUN2211S–9/11
LESHAN RADIO COMPANY, LTD.
MMUN2211LT1 Series
TYPICAL APPLICATIONS FOR NPN BRTs
+12 V
ISOLATED
LOAD
FROM µP OR
OTHER LOGIC
Figure 32. Level Shifter: Connects 12 or 24 Volt Circuits to Logic
+12 V
VCC
OUT
IN
LOAD
Figure 33. Open Collector Inverter: Inverts
the Input Signal
Figure 34. Inexpensive, Unregulated Current Source
MMUN2211S–10/11
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