Surface Mount Zener Diode COMCHIP www.comchip.com.tw CZRA3011 Thru CZRA3100 Voltage: 11 - 100 Volts Power: 3.0 Watt Features - For surf ace mounted applications in order to optimize board space - Low profile package - Built-in strain relief - Glass passivated junction - Low inductance - Excellent clamping capability - Typical ID less than 1uA above 11V DO-214AC (SMA) 0.067(1.70) 0.051(1.29) 0.180(4.57) 0.160(4.06) - High temperature soldering 260°C /10 seconds at terminals - Plastic package has underwriters laboratory flammability classification 94V-O 0.012(0.31) 0.006(0.15) 0.091(2.31) 0.067(1.70) Mechanical data - Case: JEDEC DO-214AC, Molded plastic over passivated junction - Terminals: Solder plated, solderable per MILSTD-750, method 2026 - Polarity: Color band denotes positive end (cathode) except Bidirectional - Standard Packaging: 12mm tape (EIA-481) - Weight: 0.002 ounce, 0.064 gram 0.110(2.79) 0.086(2.18) 0.059(1.50) 0.035(0.89) 0.209(5.31) 0.185(4.70) 0.008(0.20) 0.004(0.10) Dimensions in inches and (millimeters) Maximum Ratings and Electrical Characterics Ratings at 25°C ambient temperature unless otherwise specified. Rating Peak Pulse Power Dissipation (Note A) Derate above 75 Peak forward Surge Current 8.3ms single half s ine-wave superimposed on rated load (JEDEC Method) (Note B) Operating Junction and Storage Temperature Range MDS0211015A Symbol Value 3 24 Units Watts mW/°C IFSM 15 Amps TJ,TSTG -55 to +150 °C PD Page 1 Surface Mount Zener Diode COMCHIP www.comchip.com.tw ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted) (VF=1.2Volts Max, IF=500mA for all types.) Device (Note 1.) Nominal Zener Voltage VZ @ IZT (Note 2.) Test current IZT (Volts) 11 12 13 14 15 16 17 18 19 20 22 24 27 28 30 33 36 39 43 47 51 56 62 68 75 82 91 100 CZRA3011 CZRA3012 CZRA3013 CZRA3014 CZRA3015 CZRA3016 CZRA3017 CZRA3018 CZRA3019 CZRA3020 CZRA3022 CZRA3024 CZRA3027 CZRA3028 CZRA3030 CZRA3033 CZRA3036 CZRA3039 CZRA3043 CZRA3047 CZRA3051 CZRA3056 CZRA3062 CZRA3068 CZRA3075 CZRA3082 CZRA3091 CZRA3100 Maximum Zener Impedance (Note 3.) Leakage Current ZZT @ IZT ZZK @ IZK (mA) (Ohms) (Ohms) (mA) (uA) (Volts) Madc Ir - mA 68 63 58 53 50 47 44 42 40 37 34 31 28 27 25 23 21 19 17 16 15 13 12 11 10 9.1 8.2 7.5 4 4.5 4.5 5 5.5 5.5 6 6 7 7 8 9 10 12 16 20 22 28 33 38 45 50 55 70 85 95 115 160 700 700 700 700 700 700 750 750 750 750 750 750 750 750 1000 1000 1000 1000 1500 1500 1500 2000 2000 2000 2000 3000 3000 3000 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 1 1 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 8.4 9.1 9.9 10.6 11.4 12.2 13 13.7 14.4 15.2 16.7 18.2 20.6 21 22.5 25.1 27.4 29.7 32.7 35.6 38.8 42.6 47.1 51.7 56 62.2 69.2 76 225 246 208 193 180 169 150 159 142 135 123 112 100 96 90 82 75 69 63 57 53 48 44 40 36 33 30 27 1.82 1.66 1.54 1.43 1.33 1.25 1.18 1.11 1.05 1.00 0.91 0.83 0.74 0.71 0.67 0.61 0.56 0.51 0.45 0.42 0.39 0.36 0.32 0.29 0.27 0.24 0.22 0.20 IZK IR Surge Maximum Current Zener @TA=25°C Current IZM (Note 4.) VR NOTE: 1. Tolerance and Type Number Designation. The type numbers listed have a standard tolerance on the nominal zener voltage of ±5%. 2. ZENER VOLTAGE (Vz) MEASUREMENT - guarantees the zener voltage when m easured at 40 ms +- 10ms from the diode body, and an ambient temperat ure of 25 °C (+8°C , -2°C ). 3.ZENER IMPEDANCE (Zz) DERIVATION - The zener im pedance is derived from the 60 cycle ac voltage, which results when an ac current having an rms falue equal to 10% of the dc zener current (I ZT or IZK) is superimposed on I ZT or IZK. 4. SURGE CURRENT (Ir) NON-REPETITIVE - The rating li sted in the electrical characteris tics table is maximum peak, non-repetitive, reverse surge c urrent of 1/2 square wave or equivalent sine wave pulse of 1/120 second duration superimposed on the tes t current, I ZT, per JEDEC standards, however, actual device capability is as described in Figure 3. MDS0211015A Page 2 Surface Mount Zener Diode COMCHIP www.comchip.com.tw Rating and Characteristic Curves (CZRA3011 Thru CZRA3100) TRANSIENT THERMAL RESISTANCE JUNCTION-TO-LEAD(°C /W ) 30 D = 0.5 20 10 0.2 7 5 0.1 3 0.05 2 NOTE BELOW 0.1 SECOND, THERMAL RESPONSE CURVE IS APPLICABLE TO ANY LEAD LENGTH (L) 0.02 1 0.7 0.5 0.01 0.3 0.0001 D=0 0.0002 0.0005 0.001 0.002 0.005 0.01 0.02 0.05 SINGLE PULSE T JL = J L(t)PPK REPETIT IVE PULSES TJ L = JL( t,D)PPK 0.1 0.2 0.5 1 2 5 10 IR, REVERSE LEADAGE(uAdc) @VR AS SPECIFIED IN ELEC. CHAR. TABLE 1K 500 RECTANGULAR NONREPETITIVE WAVEFORM TJ = 25°C PRIOR TO INITIAL PULSE 300 200 100 50 30 20 10 .1 .2 .3 5 1 2 3 5 10 20 50 100 0.1 0.05 0.03 0.02 0.01 0.005 0.003 0.002 0.001 0.0005 0.0003 0.0002 0.0001 1 2 5 10 20 50 100 200 500 1K P.W. PULSE WIDTH (ms) NOMINAL VZ (VOLTS) Fig. 3-MAXIMUM SURGE POWER Fig. 4-TYPICAL REVERSE LEAKAGE 8 6 4 2 RANGE 0 -2 -4 3 4 6 8 10 12 TEMPERATURE COEFFICIENT(mV/°C) @ IZT TEMPERATURE COEFFICIENT(mV/°C ) @ IZT PPK, PEAK SURGE POWER(WATTS) Fig. 2-TYPICAL THERMAL RESPONSE L, 200 100 RANGE 50 40 30 20 10 0 20 40 60 80 100 VZ, ZENER VOLTAGE @IZT (VOLTS) VZ, ZENER VOLTAGE @IZT (VOLTS) Fig. 5 - UNITS TO 12 VOLTS MDS0211015A Fig. 6 - UNITS 10 TO 100 VOLTS Page 3 Surface Mount Zener Diode COMCHIP www.comchip.com.tw Rating and Characteristic Curves (CZRA3011 Thru CZRA3100) 100 IZ, ZENER CURRENT (mA) 100 50 30 20 10 5 3 2 1 0.5 0.3 0.2 0.1 0 1 2 3 4 5 6 7 8 50 30 20 10 5 3 2 1 0.5 0.3 0.2 0.1 0 9 10 10 20 30 40 50 60 70 80 90 100 VZ, ZENER VOLTAGE (VOLTS) JUNCTION-LEAD THERMAL RESISTANCE (°C/W ) VZ, ZENER VOLTAGE (VOLTS) 80 70 60 PRIMARY PATH OF CONDUCTION IS THROUGH THE CATHODE LEAD 50 40 30 20 10 0 0 1/8 1/4 3/8 1/2 5/8 3/4 7/8 1 L, LEAD LENGTH TO HEAT SINK (INCH) Fig. 9 -TYPICAL THERMAL RESISTANCE MDS0211015A Page 4 Surface Mount Zener Diode COMCHIP www.comchip.com.tw APPLICATION NOTE: Since the actual voltage available from a given zener diode is temperature dependent, it is necessary to determine junction temperature under any set of operating conditions in order to calculate its value. The following procedure is recommended: Lead Temperature, T L, should be determined from: TL = θLAPD + TA θLA is the lead-to-ambient thermal resistance (°C/W) and PD is the power dissipation. The value for θLA will vary and depends on the device mounting method. θLA is generally 30-40 °C/W for the various chips and tie points in common use and for printed circuit board wiring. The temperature of the lead can also be measured using a thermocouple placed on the lead as close as possible to the tie point. The thermal mass connected to the tie point is normally large enough so that it will not significantly respond to heat surges generated in the diode as a result of pulsed operation once steady-state conditions are achieved. Using the measured value of TL, the junction temperature may be determined by: TJ = TL + ∆TJL MDS0211015A ∆TJL is the increase in junction temperature above the lead temperature and may be found from Figure 2 for a train of power pulses or from Figure 10 for dc power. ∆TJL = θLAPD For worst-case design, using expected limits of Iz, limits of PD and the extremes of TJ (∆TJL ) may be estimated. Changes in voltage, Vz, can then be found from: ∆V = θVZ ∆TJ θVZ , the zener voltage temperature coefficient, is found from Figures 5 and 6. Under high power-pulse operation, the zener voltage will vary with time and may also be affected significantly be the zener resistance. For best regulation, keep current excursions as low as possible. Data of Figure 2 should not be used to compute surge capability. Surge limitations are given in Figure 3. They are lower than would be expected by considering only junction temperature, as current crowding effects cause temperatures to be extremely high in small spots resulting in device degradation should the limits of Figure 3 be exceeded. Page 5