ON NCS2535DTG Triple 1.4 ghz current feedback op amp with enable feature Datasheet

NCS2535
Triple 1.4 GHz Current
Feedback Op Amp with
Enable Feature
NCS2535 is a triple 1.4 GHz current feedback monolithic
operational amplifier featuring high slew rate and low differential gain
and phase error. The current feedback architecture allows for a
superior bandwidth and low power consumption. This device features
an enable pin.
Features
•
•
•
•
•
•
•
•
−3.0 dB Small Signal BW (AV = +2.0, VO = 0.5 Vp−p) 1.4 GHz Typ
Slew Rate 2500 V/ms
Supply Current 12 mA per Amplifier
Input Referred Voltage Noise 5.0 nV/ ǸHz
THD −69 dB (f = 5.0 MHz, VO = 2.0 Vp−p)
Output Current 120 mA
Enable Pin Available
This is a Pb−Free Device
Applications
•
•
•
•
High Resolution Video
Line Driver
High−Speed Instrumentation
Wide Dynamic Range IF Amp
NORMALIZED GAIN (dB)
VOUT = 0.5 VPP
0
−3
MARKING
DIAGRAM
16
1
NCS2535 = Specific Device Code
A
= Assembly Location
L
= Wafer Lot
Y
= Year
W
= Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
VOUT = 1.0 VPP
−IN1
1
−
16 EN1
+IN1
2
+
15 OUT1
VEE1
3
−12
−15
4
13 EN2
+IN2
5
+
12 OUT2
VEE2
6
−IN3
7
+IN3
8
+
VCC2
10 OUT3
9
EN3
(Top View)
AV = +2
VS = ±5 V
RF = 330 W
RL = 150 W
100k
11
−
VOUT = 2.0 VPP
10k
14 VCC1
−
−IN2
−6
−9
NCS
2535
ALYWG
G
TSSOP−16
DT SUFFIX
CASE 948F
TSSOP−16 PINOUT
6
3
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ORDERING INFORMATION
Package
Shipping†
NCS2535DTG
TSSOP−16
96 Units/Rail
NCS2535DTR2G
TSSOP−16 2500 Tape & Reel
Device
1M
10M
100M
FREQUENCY (Hz)
1G
10G
Figure 1. Frequency Response:
Gain (dB) vs. Frequency
Av = +2.0
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting
Techniques Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2006
May, 2006 − Rev. 1
1
Publication Order Number:
NCS2535/D
NCS2535
PIN FUNCTION DESCRIPTION
Pin
Symbol
Function
9, 12, 15
OUTx
Output
Equivalent Circuit
VCC
ESD
OUT
VEE
3, 6
VEE
Negative Power Supply
2, 5, 8
+INx
Non−inverted Input
VCC
ESD
ESD
+IN
−IN
VEE
1, 4, 7
−INx
Inverted Input
See Above
11, 14
VCC
Positive Power Supply
10, 13, 16
EN
Enable
VCC
EN
ESD
VEE
ENABLE PIN TRUTH TABLE
Enable
High
Low*
Disabled
Enabled
*Default open state
VCC
+IN
OUT
−IN
CC
VEE
Figure 2. Simplified Device Schematic
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NCS2535
ATTRIBUTES
Characteristics
Value
ESD
Human Body Model
Machine Model
Charged Device Model
2.0 kV (Note 1)
200 V
1.0 kV
Moisture Sensitivity (Note 2)
Flammability Rating
Level 1
Oxygen Index: 28 to 34
UL 94 V−0 @ 0.125 in
1. 0.8 kV between the input pairs +IN and −IN pins only. All other pins are 2.0 kV.
2. For additional information, see Application Note AND8003/D.
MAXIMUM RATINGS
Parameter
Symbol
Rating
Unit
Power Supply Voltage
VS
11
Vdc
Input Voltage Range
VI
vVS
Vdc
Input Differential Voltage Range
VID
vVS
Vdc
Output Current
IO
120
mA
Maximum Junction Temperature (Note 3)
TJ
150
°C
Operating Ambient Temperature
TA
−40 to +85
°C
Storage Temperature Range
Tstg
−60 to +150
°C
Power Dissipation
PD
(See Graph)
mW
RqJA
156
°C/W
Thermal Resistance, Junction−to−Air
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
3. Power dissipation must be considered to ensure maximum junction temperature (TJ) is not exceeded.
MAXIMUM POWER DISSIPATION
1800
Maximum Power Dissapation (mW)
The maximum power that can be safely dissipated is
limited by the associated rise in junction temperature. For
the plastic packages, the maximum safe junction
temperature is 150°C. If the maximum is exceeded
momentarily, proper circuit operation will be restored as
soon as the die temperature is reduced. Leaving the device
in the “overheated’’ condition for an extended period can
result in device damage. To ensure proper operation, it is
important to observe the derating curves.
1600
1400
1200
1000
800
600
400
200
0
−50
−25
0
50
75
25
100
Ambient Temperature (C)
125 150
Figure 3. Power Dissipation vs. Temperature
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NCS2535
AC ELECTRICAL CHARACTERISTICS (VCC = +5.0 V, VEE = −5.0 V, TA = −40°C to +85°C, RL = 150 W to GND, RF = 330 W,
AV = +2.0, Enable is left open, unless otherwise specified).
Symbol
Characteristic
Conditions
Min
Typ
Max
Unit
FREQUENCY DOMAIN PERFORMANCE
BW
GF0.1dB
Bandwidth
3.0 dB Small Signal
3.0 dB Large Signal
0.1 dB Gain Flatness
Bandwidth
MHz
AV = +2.0, VO = 0.5 Vp−p
AV = +2.0, VO = 2.0 Vp−p
1400
650
AV = +2.0
120
MHz
dG
Differential Gain
AV = +2.0, RL = 150 W, f = 3.58 MHz
0.02
%
dP
Differential Phase
AV = +2.0, RL = 150 W, f = 3.58 MHz
0.02
°
Slew Rate
AV = +2.0, Vstep = 2.0 V
2500
V/ms
Settling Time
0.1%
AV = +2.0, Vstep = 2.0 V
13
(10%−90%) AV = +2.0, Vstep = 2.0 V
TIME DOMAIN RESPONSE
SR
ts
ns
tr tf
Rise and Fall Time
1.5
ns
tON
Turn−on Time
55
ns
tOFF
Turn−off Time
55
ns
HARMONIC/NOISE PERFORMANCE
THD
Total Harmonic Distortion
f = 5.0 MHz, VO = 2.0 Vp−p
−69
dB
HD2
2nd Harmonic Distortion
f = 5.0 MHz, VO = 2.0 Vp−p
−73
dBc
HD3
3rd Harmonic Distortion
f = 5.0 MHz, VO = 2.0 Vp−p
−73
dBc
IP3
Third−Order Intercept
f = 10 MHz, VO = 1.0 Vp−p
34
dBm
Spurious−Free Dynamic
Range
f = 5.0 MHz, VO = 2.0 Vp−p
73
dBc
SFDR
eN
Input Referred Voltage Noise
f = 1.0 MHz
5.0
nVń ǸHz
iN
Input Referred Current Noise
f = 1.0 MHz, Inverting
f = 1.0 MHz, Non−Inverting
20
30
pAń ǸHz
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NCS2535
DC ELECTRICAL CHARACTERISTICS (VCC = +5.0 V, VEE = −5.0 V, TA = −40°C to +85°C, RL = 150 W to GND, RF = 330 W,
AV = +2.0, Enable is left open, unless otherwise specified).
Symbol
Characteristic
Conditions
Min
Typ
Max
Unit
−10
0
10
mV
DC PERFORMANCE
VIO
DVIO/DT
IIB
DIIB/DT
Input Offset Voltage
Input Offset Voltage
Temperature Coefficient
Input Bias Current
6.0
+Input (Non−Inverting), VO = 0 V
−Input (Inverting), VO = 0 V (Note 4)
"3.0
"6.0
+Input (Non−Inverting), VO = 0 V
−Input (Inverting), VO = 0 V
+40
−10
Input Bias Current
Temperature Coefficient
VIH
Input High Voltage (Enable)
(Note 4)
VIL
Input Low Voltage (Enable)
(Note 4)
mV/°C
"35
"35
mA
nA/°C
+3.0
V
+1.0
V
INPUT CHARACTERISTICS
VCM
CMRR
Input Common Mode Voltage
Range (Note 4)
Common Mode Rejection
Ratio
RIN
Input Resistance
CIN
Differential Input
Capacitance
(See Graph)
"3.0
"4.0
V
40
50
dB
150
70
kW
W
1.0
pF
0.1
13
W
+Input (Non−Inverting)
−Input (Inverting)
OUTPUT CHARACTERISTICS
ROUT
Output Resistance
Closed Loop
Open Loop
VO
Output Voltage Range
"3.0
"4.0
V
IO
Output Current
"80
"120
mA
10
V
POWER SUPPLY
VS
Operating Voltage Supply
IS,ON
Power Supply Current −
Enabled per amplifier
(Note 4)
VO = 0 V
IS,OFF
Power Supply Current −
Disabled per amplifier
Crosstalk
PSRR
Power Supply Rejection
Ratio
12
18
mA
VO = 0 V
0.1
0.3
mA
Channel to Channel, f = 5.0 MHz
60
dB
55
dB
(See Graph)
4. Guaranteed by design and/or characterization.
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5
6.0
40
NCS2535
AC ELECTRICAL CHARACTERISTICS (VCC = +2.5 V, VEE = −2.5 V, TA = −40°C to +85°C, RL = 150 W to GND, RF = 330 W,
AV = +2.0, Enable is left open, unless otherwise specified).
Symbol
Characteristic
Conditions
Min
Typ
Max
Unit
FREQUENCY DOMAIN PERFORMANCE
BW
GF0.1dB
Bandwidth
3.0 dB Small Signal
3.0 dB Large Signal
0.1 dB Gain Flatness
Bandwidth
MHz
AV = +2.0, VO = 0.5 Vp−p
AV = +2.0, VO = 1.0 Vp−p
800
450
AV = +2.0
100
MHz
dG
Differential Gain
AV = +2.0, RL = 150 W, f = 3.58 MHz
0.02
%
dP
Differential Phase
AV = +2.0, RL = 150 W, f = 3.58 MHz
0.02
°
Slew Rate
AV = +2.0, Vstep = 1.0 V
1500
V/ms
Settling Time
0.1%
AV = +2.0, Vstep = 1.0 V
10
(10%−90%) AV = +2.0, Vstep = 1.0 V
TIME DOMAIN RESPONSE
SR
ts
ns
tr tf
Rise and Fall Time
1.2
ns
tON
Turn−on Time
55
ns
tOFF
Turn−off Time
55
ns
HARMONIC/NOISE PERFORMANCE
THD
Total Harmonic Distortion
f = 5.0 MHz, VO = 1.0 Vp−p
−58
dB
HD2
2nd Harmonic Distortion
f = 5.0 MHz, VO = 1.0 Vp−p
−61
dBc
HD3
3rd Harmonic Distortion
f = 5.0 MHz, VO = 1.0 Vp−p
−64
dBc
IP3
Third−Order Intercept
f = 10 MHz, VO = 0.5 Vp−p
28
dBm
Spurious−Free Dynamic
Range
f = 5.0 MHz, VO = 1.0 Vp−p
61
dBc
SFDR
eN
Input Referred Voltage Noise
f = 1.0 MHz
5.0
nVń ǸHz
iN
Input Referred Current Noise
f = 1.0 MHz, Inverting
f = 1.0 MHz, Non−Inverting
20
30
pAń ǸHz
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NCS2535
DC ELECTRICAL CHARACTERISTICS (VCC = +2.5 V, VEE = −2.5 V, TA = −40°C to +85°C, RL = 150 W to GND, RF = 330 W,
AV = +2.0, Enable is left open, unless otherwise specified).
Symbol
Characteristic
Conditions
Min
Typ
Max
Unit
−10
0
+10
mV
DC PERFORMANCE
VIO
DVIO/DT
IIB
DIIB/DT
Input Offset Voltage
Input Offset Voltage
Temperature Coefficient
6.0
Input Bias Current
Input Bias Current Temperature
Coefficient
VIH
Input High Voltage (Enable)
(Note 5)
VIL
Input Low Voltage (Enable)
(Note 5)
+Input (Non−Inverting), VO = 0 V
−Input (Inverting), VO = 0 V (Note 5)
"3.0
"6.0
+Input (Non−Inverting), VO = 0 V
−Input (Inverting), VO = 0 V
+40
−10
mV/°C
"35
"35
mA
nA/°C
+1.5
V
+0.5
V
INPUT CHARACTERISTICS
VCM
CMRR
Input Common Mode Voltage
Range (Note 5)
Common Mode Rejection Ratio
RIN
Input Resistance
CIN
Differential Input Capacitance
(See Graph)
"1.1
"1.5
V
40
50
dB
150
70
kW
W
1.0
pF
0.1
13
W
+Input (Non−Inverting)
−Input (Inverting)
OUTPUT CHARACTERISTICS
ROUT
Output Resistance
Closed Loop
Open Loop
VO
Output Voltage Range
"1.1
"1.5
V
IO
Output Current
"80
"120
mA
5.0
V
POWER SUPPLY
VS
Operating Voltage Supply
IS,ON
Power Supply Current − Enabled
per amplifier (Note 5)
VO = 0 V
IS,OFF
Power Supply Current −
Disabled per amplifier
Crosstalk
PSRR
11
18
mA
VO = 0 V
0.09
0.3
mA
Channel to Channel, f = 5.0 MHz
60
dB
55
dB
Power Supply Rejection Ratio
6.0
(See Graph)
40
5. Guaranteed by design and/or characterization.
VIN
+
−
VOUT
RL
RF
RF
Figure 4. Typical Test Setup
(AV = +2.0, RF = 330 W, RL = 150 W)
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NCS2535
6
VOUT = 0.5 VPP
3
NORMALIZED GAIN (dB)
NORMALIZED GAIN (dB)
6
0
−3
VOUT = 1.0 VPP
−6
−9
−12
−15
VOUT = 2.0 VPP
AV = +2
VS = ±5 V
RF = 330 W
RL = 150 W
10k
100k
3
0
−3
−9
−12
−15
100M
1M
10M
FREQUENCY (Hz)
Figure 5. Frequency Response:
Gain (dB) vs. Frequency
AV = +2.0
NORMALIZED GAIN (dB)
NORMALIZED GAIN (dB)
0
AV = +2
−3
−6
−15
1M
10M
100M
FREQUENCY (Hz)
1G
6
AV = +1
3
−12
100k
VOUT = 1.0 VPP
VS = ±5 V
RF = 330 W
RL = 150 W
10k
100k
1M
10M
100M
FREQUENCY (Hz)
10G
Figure 6. Frequency Response:
Gain (dB) vs. Frequency
AV = +1.0
6
−9
VOUT = 1.0 VPP
AV = +1
VS = ±5 V
RF = 330 W
RL = 150 W
10k
10G
1G
VOUT = 0.5 VPP
−6
3
0
−6
−9
−15
10G
Figure 7. Large Signal Frequency Response
Gain (dB) vs. Frequency
AV = +2
−3
−12
1G
AV = +1
VOUT = 0.5 VPP
VS = ±5 V
RF = 330 W
RL = 150 W
10k
100k
1M
10M
100M
FREQUENCY (Hz)
1G
10G
Figure 8. Small Signal Frequency Response
Gain (dB) vs. Frequency
VS = ±5 V
VS = ±5 V
Figure 10. Large Signal Step Response
Vertical: 2 V/div
Horizontal: 10 ns/div
Figure 9. Small Signal Step Response
Vertical: 500 mV/div
Horizontal: 10 ns/div
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NCS2535
−50
−60
THD
−65
HD2
−70
−80
−60
THD
−65
1
HD2
−70
HD3
−75
f = 5 MHz
VS = ±5 V
RF = 330 W
RL = 150 W
−55
DISTORTION (dB)
−55
DISTORTION (dB)
−50
VOUT = 2 VPP
VS = ±5 V
RF = 330 W
RL = 150 W
−75
10
−80
100
HD3
0.5
1
0
1.5
2
2.5
3
3.5
VOUT (VPP)
Figure 11. THD, HD2, HD3 vs. Frequency
Figure 12. THD, HD2, HD3 vs. Frequency
VS = ±5 V
−30
40
−35
PSRR (dB)
CMRR (dB)
50
30
20
−40
−45
−50
10
100
1k
10k
100k
−55
1M
10k
100k
1M
10M
FREQUENCY (Hz)
FREQUENCY (Hz)
Figure 13. Input Referred Voltage Noise vs.
Frequency
Figure 14. CMRR vs. Frequency
0
0.03
−10
0.02
DIFFERENTIAL GAIN (%)
VOLTAGE NOISE (nV/√Hz)
VS = ±5 V
−20
−30
−40
+5 V
−50
−60
4.5
−25
60
0
4
FREQUENCY (MHz)
−5 V
10k
100k
1M
10M
50 MHz
10 MHz
20 MHz
3.58 MHz
0.01
0
−0.01
4.43 MHz
VS = ±5 V
RL = 150 W
AV = +2
−0.02
−0.03
−0.8
100M
FREQUENCY (Hz)
0.2
0.4
−0.4 −0.2
0
OFFSET VOLTAGE (V)
Figure 15. PSRR vs. Frequency
Figure 16. Differential Gain
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100M
−0.6
0.6
0.8
NCS2535
0.03
14
0.02
10 MHz
3.58 MHz
CURRENT (mA)
DIFFERENTIAL PHASE (°)
20 MHz
0.01
0
4.43 MHz
−0.01
−0.02
−0.6
0.4
−0.4 −0.2
0
0.2
OFFSET VOLTAGE (V)
25°C
11
−40°C
10
9
6
0.8
0.6
5
4
6
8
7
9
POWER SUPPLY VOLTAGE (V)
10
11
Figure 18. Supply Current per Amplifier vs. Power
Supply (Enabled)
0.12
9
0.11
85°C
0.10
25°C
85°C
8
OUPUT VOLTAGE (VPP)
CURRENT (mA)
12
7
Figure 17. Differential Phase
0.09
−40°C
0.08
0.07
0.06
7
25°C
6
−40°C
5
4
3
0.05
0.04
2
4
5
7
9
6
8
POWER SUPPLY VOLTAGE (V)
10
11
4
Figure 19. Supply Current per Amplifier vs.
Temperature (Disabled)
7
9
6
8
POWER SUPPLY VOLTAGE (V)
11
10
10
OUTPUT RESISTANCE (W)
f = 5 MHz
VS = ±5 V
RF = 330 W
RL = 150 W
100 k
10 k
1k
100
10
10k
5
Figure 20. Output Voltage Swing vs. Supply Voltage
1M
TRANSIMPEDANCE (W)
85°C
8
VS = ±5 V
RL = 150 W
AV = +2
50 MHz
−0.03
−0.8
13
100k
1M
10M
100M
1G
10G
VS = ±5 V
1
0.1
0.01
10k
FREQUENCY (MHz)
100k
1M
10M
100M
FREQUENCY (Hz)
Figure 21. Transimpedance (ROL) vs. Frequency
Figure 22. Closed Loop Output Resistance vs.
Frequency
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NCS2535
15
NORMALIZED GAIN (dB)
10 pF
AV = +2
Vout = 0.5 Vpp
VS = ±5 V
RF = 330 W
RL = 150 W
12
9
6
3
47 pF
100 pF
0
−3
−6
−9
−12
−15
10k
100k
1M
10M
100M
1G
10G
FREQUENCY (Hz)
Figure 23. Frequency Response vs. Capacitive
Load
VS = ±5V
VS = ±5V
EN
EN
OUT
OUT
Output Signal: Squarewave, 10MHz, 2VPP
Output Signal: Squarewave, 10MHz, 2VPP
Figure 24. Turn ON Time Delay
Vertical: (EN) 500mV/div (OUT) 1V/div
Horizontal: 40ns/div
Figure 25. Turn OFF Time Delay
Vertical: (EN) 500mV/div (OUT) 1V/div
Horizontal: 40ns/div
−20
NORMALIZED GAIN (dB)
CROSSTALK (dBc)
−30
3
Gain = +2
VS = ±5V
−40
Channel 1
−50
Channel 3
−60
−70
−80
10k
100k
1M
100M
10M
FREQUENCY (Hz)
1G
10G
Figure 26. Crosstalk (dBc) vs. Frequency
(Crosstalk measured on Channel 2 with
input signal on Channel 1 and 3)
CH1
CH2
0
−3
CH3
−6
−9
AV = +2
VS = ±5 V
RF = 330 W
RL = 150 W
−12
−15
10k
100k
100M
1M
10M
FREQUENCY (Hz)
1G
Figure 27. Channel Matching vs. Frequency
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10G
NCS2535
General Design Considerations
use a current feedback amplifier with the output shorted
directly to the inverting input.
The current feedback amplifier is optimized for use in
high performance video and data acquisition systems. For
current feedback architecture, its closed−loop bandwidth
depends on the value of the feedback resistor. The
closed−loop bandwidth is not a strong function of gain, as is
for a voltage feedback amplifier, as shown in Figure 28.
Proper high speed PCB design rules should be used for all
wideband amplifiers as the PCB parasitics can affect the
overall performance. Most important are stray capacitances
at the output and inverting input nodes as it can effect
peaking and bandwidth. A space (3/16″ is plenty) should be
left around the signal lines to minimize coupling. Also,
signal lines connecting the feedback and gain resistors
should be short enough so that their associated inductance
does not cause high frequency gain errors. Line lengths less
than 1/4″ are recommended.
RF = 100 W
RF = 150 W
RF = 200 W
GAIN (dB)
21
18
15
12
9
6
3
0
−3
−6
−9
−12
−15
−18
−21
Printed Circuit Board Layout Techniques
RF = 270 W
RF = 330 W
Video Performance
RF = 400 W
This device designed to provide good performance with
NTSC, PAL, and HDTV video signals. Best performance is
obtained with back terminated loads as performance is
degraded as the load is increased. The back termination
reduces reflections from the transmission line and
effectively masks transmission line and other parasitic
capacitances from the amplifier output stage.
RF = 450 W
AV = +2
VS = ±5 V
RL = 150 W
10 k
100 k
RF = 500 W
1M
10 M
100 M
1G
10 G
FREQUENCY (Hz)
Figure 28. Frequency Response vs. RF
ESD Protection
All device pins have limited ESD protection using internal
diodes to power supplies as specified in the attributes table
(see Figure 29). These diodes provide moderate protection
to input overdrive voltages above the supplies. The ESD
diodes can support high input currents with current limiting
series resistors. Keep these resistor values as low as possible
since high values degrade both noise performance and
frequency response. Under closed−loop operation, the ESD
diodes have no effect on circuit performance. However,
under certain conditions the ESD diodes will be evident. If
the device is driven into a slewing condition, the ESD diodes
will clamp large differential voltages until the feedback loop
restores closed−loop operation. Also, if the device is
powered down and a large input signal is applied, the ESD
diodes will conduct.
NOTE: Human Body Model for +IN and –IN pins are
rated at 0.8 kV while all other pins are rated at
2.0 kV.
The −3.0 dB bandwidth is, to some extent, dependent on
the power supply voltages. By using lower power supplies,
the bandwidth is reduced, because the internal capacitance
increases. Smaller values of feedback resistor can be used at
lower supply voltages, to compensate for this affect.
Feedback and Gain Resistor Selection for Optimum
Frequency Response
A current feedback operational amplifier’s key advantage
is the ability to maintain optimum frequency response
independent of gain by using appropriate values for the
feedback resistor. To obtain a very flat gain response, the
feedback resistor tolerance should be considered as well.
Resistor tolerance of 1% should be used for optimum
flatness. Normally, lowering RF resistor from its
recommended value will peak the frequency response and
extend the bandwidth while increasing the value of RF
resistor will cause the frequency response to roll off faster.
Reducing the value of RF resistor too far below its
recommended value will cause overshoot, ringing, and
eventually oscillation.
Since each application is slightly different, it is worth
some experimentation to find the optimal RF for a given
circuit. A value of the feedback resistor that produces
X0.1 dB of peaking is the best compromise between
stability and maximal bandwidth. It is not recommended to
VCC
Internal
Circuitry
External
Pin
VEE
Figure 29. Internal ESD Protection
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NCS2535
PACKAGE DIMENSIONS
TSSOP−16
CASE 948F−01
ISSUE A
16X K REF
0.10 (0.004)
0.15 (0.006) T U
M
T U
V
S
S
S
K
ÇÇÇ
ÉÉ
ÇÇÇ
ÉÉ
K1
2X
L/2
16
9
J1
B
−U−
L
SECTION N−N
J
PIN 1
IDENT.
8
1
N
0.15 (0.006) T U
S
0.25 (0.010)
A
−V−
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION A DOES NOT INCLUDE MOLD
FLASH. PROTRUSIONS OR GATE BURRS.
MOLD FLASH OR GATE BURRS SHALL NOT
EXCEED 0.15 (0.006) PER SIDE.
4. DIMENSION B DOES NOT INCLUDE
INTERLEAD FLASH OR PROTRUSION.
INTERLEAD FLASH OR PROTRUSION SHALL
NOT EXCEED 0.25 (0.010) PER SIDE.
5. DIMENSION K DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE 0.08 (0.003) TOTAL
IN EXCESS OF THE K DIMENSION AT
MAXIMUM MATERIAL CONDITION.
6. TERMINAL NUMBERS ARE SHOWN FOR
REFERENCE ONLY.
7. DIMENSION A AND B ARE TO BE
DETERMINED AT DATUM PLANE −W−.
M
N
F
DETAIL E
−W−
C
0.10 (0.004)
−T− SEATING
PLANE
D
G
H
DIM
A
B
C
D
F
G
H
J
J1
K
K1
L
M
MILLIMETERS
MIN
MAX
4.90
5.10
4.30
4.50
−−−
1.20
0.05
0.15
0.50
0.75
0.65 BSC
0.18
0.28
0.09
0.20
0.09
0.16
0.19
0.30
0.19
0.25
6.40 BSC
0_
8_
INCHES
MIN
MAX
0.193 0.200
0.169 0.177
−−− 0.047
0.002 0.006
0.020 0.030
0.026 BSC
0.007
0.011
0.004 0.008
0.004 0.006
0.007 0.012
0.007 0.010
0.252 BSC
0_
8_
DETAIL E
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NCS2535/D