AP9561GP-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Lower On-resistance
D
▼ Simple Drive Requirement
▼ Fast Switching Characteristic
-40V
RDS(ON)
16mΩ
ID
G
▼ RoHS Compliant
BVDSS
-45A
S
Description
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
G
The TO-220 package is widely preferred for commercial-industrial
power applications and suited for low voltage applications such as
DC/DC converters.
TO-220(P)
D
S
Absolute Maximum Ratings
Symbol
Parameter
Rating
Units
VDS
Drain-Source Voltage
-40
V
VGS
Gate-Source Voltage
+20
V
ID@TC=25℃
Continuous Drain Current, VGS @ 10V
-45
A
ID@TC=100℃
Continuous Drain Current, VGS @ 10V
-29
A
1
IDM
Pulsed Drain Current
-180
A
PD@TC=25℃
Total Power Dissipation
54.3
W
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Parameter
Value
Units
Rthj-c
Maximum Thermal Resistance, Junction-case
2.3
℃/W
Rthj-a
Maximum Thermal Resistance, Junction-ambient
62
℃/W
Data and specifications subject to change without notice
1
200904271
AP9561GP-HF
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max. Units
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID=-250uA
-40
-
-
V
RDS(ON)
Static Drain-Source On-Resistance2
VGS=-10V, ID=-30A
-
-
16
mΩ
VGS=-4.5V, ID=-20A
-
-
28
mΩ
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=-250uA
-1
-
-3
V
gfs
Forward Transconductance
VDS=-10V, ID=-20A
-
33
-
S
IDSS
Drain-Source Leakage Current
VDS=-32V, VGS=0V
-
-
-10
uA
IGSS
Gate-Source Leakage
VGS= +20V, VDS=0V
-
-
+100
nA
ID=-20A
-
25
40
nC
2
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=-32V
-
4.4
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=-4.5V
-
18
-
nC
VDS=-20V
-
9
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=-20A
-
46
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=-10V
-
46
-
ns
tf
Fall Time
RD=1Ω
-
95
-
ns
Ciss
Input Capacitance
VGS=0V
-
1700 2720
pF
Coss
Output Capacitance
VDS=-25V
-
360
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
290
-
pF
Min.
Typ.
IS=-20A, VGS=0V
-
-
-1.2
V
IS=-20A, VGS=0V,
-
31
-
ns
dI/dt=-100A/µs
-
26
-
nC
Source-Drain Diode
Symbol
VSD
Parameter
2
Forward On Voltage
2
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Test Conditions
Max. Units
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP9561GP-HF
160
100
-10V
-7.0 V
-6.0 V
TC=150oC
-10V
-7.0V
-6.0V
-5.0V
80
-ID , Drain Current (A)
-ID , Drain Current (A)
T C = 25 o C
120
-5.0 V
80
V G = - 4.0 V
60
V G = - 4.0 V
40
40
20
0
0
0
2
4
6
8
10
0
-V DS , Drain-to-Source Voltage (V)
2
4
6
8
10
-V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
30
1.8
I D = -20 A
T C =25 ℃
I D =-30A
V G =-10V
1.6
Normalized RDS(ON)
RDS(ON) (mΩ )
26
22
18
1.4
1.2
1.0
14
0.8
0.6
10
2
4
6
8
10
-50
0
50
100
150
T j , Junction Temperature ( o C)
-V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
30
1.6
Normalized -VGS(th) (V)
1.4
-IS(A)
20
T j =150 o C
T j =25 o C
10
1.2
1
0.8
0.6
0.4
0
0
0.2
0.4
0.6
0.8
1
1.2
-V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.4
-50
0
50
100
150
o
T j , Junction Temperature ( C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP9561GP-HF
f=1.0MHz
2400
12
2000
V DS =-32V
I D =-20A
10
C iss
1600
C (pF)
-VGS , Gate to Source Voltage (V)
14
8
1200
6
800
4
400
C oss
C rss
2
0
0
0
10
20
30
40
50
1
60
5
9
13
17
21
25
29
Q G , Total Gate Charge (nC)
-V DS , Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1000
100
-ID (A)
100us
10
1ms
10ms
100ms
DC
o
T C =25 C
Single Pulse
1
Normalized Thermal Response (Rthjc)
1
Duty factor=0.5
0.2
0.1
0.1
0.05
PDM
t
0.02
T
0.01
Duty factor = t/T
Peak Tj = PDM x Rthjc + T C
Single Pulse
0.01
0.1
1
10
100
0.00001
0.0001
-V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
0.001
0.01
0.1
1
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
VG
VDS
90%
QG
-4.5V
QGS
QGD
10%
VGS
td(on) tr
td(off)tf
Fig 11. Switching Time Waveform
Charge
Q
Fig 12. Gate Charge Waveform
4