CHR2295 RoHS COMPLIANT 24-30GHz Integrated Down Converter GaAs Monolithic Microwave IC Description LO The CHR2295 is a multifunction chip which integrates a LO time two multiplier, a balanced cold FET mixer, and a RF LNA. It is designed for a wide range of applications, typically commercial communication systems. The backside of the chip is both RF and DC grounds. This helps simplify the assembly process. The circuit is manufactured with a pHEMT process, 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is available in chip form. I GM GB VDM VDL GX VGA Q RF Main Features 12.00 8.00 ■ Broadband performances: 24-30GHz ■ 11dB conversion gain ■ 3.5dB noise figure, for IF>0.1GHz ■ 10dBm LO input power ■ -10dBm RF IP@1dB gain comp. ■ Low DC power: [email protected] ■ Chip size: 2.49x1.97x0.10mm 4.00 (dB) 0.00 Gc_channel_sup_rf+ Gc_channel_inf_rf+ Gc_channel inf_rf- Gc_channel_sup_rf- -4.00 -8.00 -12.00 -16.00 -20.00 -24.00 22.5 23.5 24.5 25.5 26.5 27.5 28.5 29.5 30.5 31.5 2XLO Frequency (GHz) Conversion Gain & Image suppression @IF=1.5GHz (test board losses included) Main Characteristics Tamb. = 25°C Symbol FRF FLO FIF Gc Parameter Min RF frequency range LO frequency range IF frequency range Conversion gain 24 12 DC 8.5 Typ 11 Max Unit 30 15 1.5 GHz GHz GHz dB ESD Protection: Electrostatic discharge sensitive device. Observe handling precautions! Ref.: DSCHR22951192 - 11 Jul 11 1/6 Specifications subject to change without notice United Monolithic Semiconductors S.A.S. Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France Tel.: +33 (0)1 69 33 03 08 - Fax: +33 (0)1 69 33 03 09 32.5 24-30GHz MFC Down Converter CHR2295 Electrical Characteristics for Broadband Operation Tamb = +25°C, Vd = 3.5V Symbol Parameter Min Typ Max Unit FRF RF frequency range 24 30 GHz FLO LO frequency range 12 15 GHz FIF IF frequency range DC 1.5 GHz Gc Conversion gain (1) 8.5 NF PLO Img Sup P1dB 11 dB Noise Figure, for IF>0.1GHz 3.5 dB LO Input power 10 dBm 17 dBc -10 dBm Image Suppression 15 Input power at 1dB gain compression LO VSWR Input LO VSWR (1) 2.0:1 RF VSWR Input RF VSWR (1) 3.0:1 (2) Id Bias current 120 mA (1) On Wafer measurements (2) Current source biasing network is recommended. Optimum performances will be achieved for Idm=50mA and Idl=70mA Absolute Maximum Ratings Tamb. = 25°C (1) Symbol Parameter Values Unit Vd Drain bias voltage 4.0 V Id Drain bias current 200 mA Vg Gate bias voltage -2.0 to +0.4 V (2) Pin Maximum peak input power overdrive +15 dBm Ta Operating temperature range -40 to +85 °C Tstg Storage temperature range -55 to +155 °C (1) Operation of this device above anyone of these parameters may cause permanent damage. (2) Duration < 1s. Ref.: DSCHR22951192 - 11 Jul 11 2/6 Route Départementale 128, B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Specifications subject to change without notice 24-30GHz MFC Down Converter CHR2295 Typical On-wafer Measurements Bias Conditions : Vdm= Vdl= 3.5V, Vgm= -0.9V, Vgb= -0.3V, Vgx= -0.7V, Vga= -0.2V 10 8 6 4 2 0 -2 -4 -6 Freq_RF= 24.6GHz Freq_LO= 12.05GHz -8 -10 -12 IF power_I (dBm) Conv_gain I (dB) IF power_Q (dBm) Conv_gain Q (dB) -14 -20 -18 -16 -14 -12 -10 -8 -6 -4 Input RF power (dBm) 10 8 6 4 2 0 -2 -4 -6 Freq_RF= 28GHz Freq_LO= 13.75GHz -8 -10 -12 IF power_I (dBm) Conv_gain I (dB) IF power_Q (dBm) Conv_gain Q (dB) -14 -20 -18 -16 -14 -12 -10 -8 -6 -4 Input RF power (dBm) Input RF compression by channel Ref.: DSCHR22951192 - 11 Jul 11 3/6 Route Départementale 128, B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Specifications subject to change without notice 24-30GHz MFC Down Converter CHR2295 Typical On-board Measurements Bias Conditions : Vdm= Vdl= 3.5V, Vgm= Vgx= -0.9V, Vgb= Vga= -0.3V All these measurements include the losses from the test board (typically 1dB for the conversion gain and 0.5dB for the Noise Figure). Conversion Gain & Image suppression (dB) 12.00 8.00 4.00 0.00 -4.00 IF=1GHz -8.00 IF=2GHz IF=1.5GHz -12.00 -16.00 IF=1GHz IF=2GHz -20.00 IF=1.5GHz -24.00 22.5 23.5 24.5 25.5 26.5 27.5 28.5 29.5 30.5 31.5 32.5 2XLO Frequency (GHz) Conversion gain & Image suppression versus IF frequency 10 9 Channel_sup_IF_1GHz Channel_sup_IF_1.5GHz Channel_sup_IF_2GHz 8 Channel_inf_IF_1GHz Channel_inf_IF_1.5GHz Channel_inf_IF_2GHz Noise factor (dB) 7 6 5 4 3 2 1 0 24.5 25 25.5 26 26.5 27 27.5 28 28.5 29 29.5 RF Frequency (GHz) Noise figure supradyne & infradyne versus IF frequency Ref.: DSCHR22951192 - 11 Jul 11 4/6 Route Départementale 128, B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Specifications subject to change without notice 24-30GHz MFC Down Converter CHR2295 Chip Assembly and Mechanical Data LO IN To Vgm DC Gate Supply I OUT To Vgb DC Gate Supply To Vdm,Vdl DC Drain Supply Q OUT To Vgx DC Gate Supply To Vga DC Gate Supply RF IN Note: Supply feed should be bypassed. 25µm diameter gold wire is recommended Bonding pad positions (Chip thickness: 100µm. All dimensions are in micrometers) Ref.: DSCHR22951192 - 11 Jul 11 5/6 Route Départementale 128, B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Specifications subject to change without notice 24-30GHz MFC Down Converter CHR2295 Recommended ESD management Refer to the application note AN0020 available at http://www.ums-gaas.com for ESD sensitivity and handling recommendations for the UMS products. Ordering Information Chip form: CHR2295-99F/00 Information furnished is believed to be accurate and reliable. However United Monolithic Semiconductors S.A.S. assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of United Monolithic Semiconductors S.A.S.. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. United Monolithic Semiconductors S.A.S. products are not authorised for use as critical components in life support devices or systems without express written approval from United Monolithic Semiconductors S.A.S. Ref.: DSCHR22951192 - 11 Jul 11 6/6 Route Départementale 128, B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Specifications subject to change without notice