CYStech Electronics Corp. Spec. No. : C838E3 Issued Date : 2016.06.23 Revised Date : Page No. : 1/8 N-Channel Enhancement Mode Power MOSFET MTE030N15RE3 Features • Low Gate Charge • Simple Drive Requirement • Repetitive Avalanche Rated • Fast Switching Characteristic • Pb-free lead plating and RoHS compliant package Symbol BVDSS ID@VGS=10V, TC=25°C ID@VGS=10V, TA=25°C RDS(ON)@VGS=10V, ID=30A 150V 36A 4.6A 33.3mΩ (typ) Outline TO-220 MTE030N15RE3 G：Gate D：Drain S：Source GDS Ordering Information Device Package Shipping TO-220 MTE030N15RE3-0-UB-X 50 pcs/tube, 20 tubes/box, 4 boxes / carton (Pb-free lead plating package) Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, UB : 50 pcs / tube, 20 tubes/box Product rank, zero for no rank products Product name MTE030N15RE3 CYStek Product Specification Spec. No. : C838E3 Issued Date : 2016.06.23 Revised Date : Page No. : 2/8 CYStech Electronics Corp. Absolute Maximum Ratings (TC=25°C, unless otherwise noted) Parameter Symbol Limits Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @VGS=10V, TC=25°C Continuous Drain Current @VGS=10V, TC=100°C Pulsed Drain Current (Note 1) Continuous Drain Current @VGS=10V, TA=25°C Continuous Drain Current @VGS=10V, TA=70°C Avalanche Current @L=0.1mH Avalanche Energy @ L=5mH, ID=15A, VDD=50V (Note 2) Repetitive Avalanche Energy@ L=0.05mH Total Power Dissipation (TC=25℃) Total Power Dissipation (TC=100℃) Total Power Dissipation (TA=25℃) Total Power Dissipation (TA=100℃) Operating Junction and Storage Temperature VDS VGS 150 ±30 36 25.5 144 4.6 3.7 36 560 13 136 68 2.4 1.2 -55~+175 ID IDM IDSM IAS EAS EAR PD Tj, Tstg Unit V A mJ W °C Note : 1. Pulse width limited by maximum junction temperature 2. 100% tested by conditions of L=0.1mH, IAS=20A, VGS=10V, VDD=50V Thermal Data Parameter Thermal Resistance, Junction-to-case, max Thermal Resistance, Junction-to-ambient, max Symbol RθJC RθJA Value 1.1 62.5 Unit °C/W Characteristics (TC=25°C, unless otherwise specified) Symbol Static BVDSS ∆BVDSS/∆Tj VGS(th) GFS IGSS IDSS *RDS(ON) Dynamic *Qg *Qgs *Qgd MTE030N15RE3 Min. Typ. Max. Unit Test Conditions 150 2.0 - 0.1 16 33.3 4.0 ±100 1 25 42 V V/°C V S nA mΩ VGS=0V, ID=250μA Reference to 25°C, ID=250μA VDS = VGS, ID=250μA VDS =10V, ID=20A VGS=±30V VDS =120V, VGS =0V VDS =100V, VGS =0V, Tj=125°C VGS =10V, ID=30A - 34.8 11.3 9.6 52 - nC ID=20A, VDS=75V, VGS=10V μA CYStek Product Specification CYStech Electronics Corp. *td(ON) *tr *td(OFF) *tf Ciss Coss Crss Rg Source-Drain Diode *IS *ISM *VSD *trr *Qrr - 21.2 20.6 34.6 9 1773 104 12 2.2 - 0.9 57 143 43 172 1.2 - Spec. No. : C838E3 Issued Date : 2016.06.23 Revised Date : Page No. : 3/8 ns VDS=75V, ID=20A, VGS=10V, RG=3Ω pF VGS=0V, VDS=75V, f=1MHz Ω f=1MHz A V ns nC IS=30A, VGS=0V IF=20A, VGS=0V, dIF/dt=100A/μs *Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2% MTE030N15RE3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C838E3 Issued Date : 2016.06.23 Revised Date : Page No. : 4/8 Typical Characteristics Brekdown Voltage vs Junction Temperature Typical Output Characteristics 1.4 ID, Drain Current(A) 90 BVDSS, Normalized Drain-Source Breakdown Voltage 100 10V,9V 80 8V 70 60 50 7V 40 30 VGS=5.5V 20 6.5V 1.2 1 0.8 ID=250μA, VGS=0V 0.6 6V 10 0.4 0 0 2 4 6 8 VDS, Drain-Source Voltage(V) -75 -50 -25 10 Reverse Drain Current vs Source-Drain Voltage Static Drain-Source On-State resistance vs Drain Current 100 R DS(ON) , Static Drain-Source On-State Resistance(mΩ) 1.2 VSD, Source-Drain Voltage(V) VGS=10V 10 1 Tj=25°C 0.8 0.6 Tj=150°C 0.4 0.2 0.1 1 10 ID, Drain Current(A) 0 100 5 10 15 20 25 IDR , Reverse Drain Current(A) 30 Drain-Source On-State Resistance vs Junction Tempearture Static Drain-Source On-State Resistance vs Gate-Source Voltage 2.8 R DS(ON) , Normalized Static DrainSource On-State Resistance 200 R DS(ON) , Static Drain-Source OnState Resistance(mΩ) 0 25 50 75 100 125 150 175 200 Tj, Junction Temperature(°C) 180 ID=30A 160 140 120 100 80 60 40 20 2.4 VGS=10V, ID=30A 2 1.6 1.2 0.8 0.4 RDS(ON) @Tj=25°C : 33.3mΩ typ. 0 0 0 MTE030N15RE3 2 4 6 8 VGS, Gate-Source Voltage(V) 10 -75 -50 -25 0 25 50 75 100 125 150 175 200 Tj, Junction Temperature(°C) CYStek Product Specification Spec. No. : C838E3 Issued Date : 2016.06.23 Revised Date : Page No. : 5/8 CYStech Electronics Corp. Typical Characteristics(Cont.) Threshold Voltage vs Junction Tempearture Capacitance vs Drain-to-Source Voltage VGS(th), Normalized Threshold Voltage 10000 Capacitance---(pF) Ciss 1000 C oss 100 10 Crss 1.4 1.2 ID=1mA 1 0.8 0.6 ID=250μA 0.4 0.2 1 0 10 20 30 40 50 60 VDS, Drain-Source Voltage(V) 70 -75 -50 -25 80 75 100 125 150 175 200 Gate Charge Characteristics 100 10 VDS=10V VGS, Gate-Source Voltage(V) GFS , Forward Transfer Admittance(S) 25 50 Tj, Junction Temperature(°C) Forward Transfer Admittance vs Drain Current 10 VDS=15V 1 0.1 Pulsed Ta=25°C 0.01 0.001 8 6 4 VDS=75V 2 ID=20A 0 0.01 0.1 1 ID, Drain Current(A) 10 0 100 4 8 12 16 20 24 28 32 Total Gate Charge---Qg(nC) 36 40 Maximum Drain Current vs Case Temperature Maximum Safe Operating Area 40 RDS(ON) Limited 100 ID, Maximum Drain Current(A) 1000 ID, Drain Current(A) 0 10 μs 100μs 10 1ms TC=25°C, Tj=175°C, VGS=10V,RθJC=1.1°C/W single pulse 1 10ms 100ms DC 35 30 25 20 15 10 VGS=10V, RθJC=1.1°C/W 5 0 0.1 0.1 MTE030N15RE3 1 10 100 VDS, Drain-Source Voltage(V) 1000 25 50 75 100 125 150 TC , Case Temperature(°C) 175 200 CYStek Product Specification Spec. No. : C838E3 Issued Date : 2016.06.23 Revised Date : Page No. : 6/8 CYStech Electronics Corp. Typical Characteristics(Cont.) Single Pulse Maximum Power Dissipation Typical Transfer Characteristics 4000 100 90 VDS=10V Peak Transient Power (W) 3500 ID, Drain Current (A) 80 70 60 50 40 30 20 TJ(MAX) =175°C TC=25°C RθJC=1.1°C/W 3000 2500 2000 1500 1000 500 10 0 0 1 2 3 4 5 6 7 8 9 0 0.0001 10 0.001 VGS, Gate-Source Voltage(V) 0.01 0.1 Pulse Width(s) 1 10 Transient Thermal Response Curves r(t), Normalized Effective Transient Thermal Resistance 1 D=0.5 1.RθJC(t)=r(t)*RθJC 2.Duty Factor, D=t1/t2 3.TJM-TC=PDM*RθJC(t) 4.RθJC=1.1 °C/W 0.2 0.1 0.1 0.05 0.02 0.01 Single Pulse 0.01 1.E-05 1.E-04 1.E-03 1.E-02 1.E-01 1.E+00 1.E+01 t1, Square Wave Pulse Duration(s) MTE030N15RE3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C838E3 Issued Date : 2016.06.23 Revised Date : Page No. : 7/8 Recommended wave soldering condition Product Peak Temperature Soldering Time Pb-free devices 260 +0/-5 °C 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Average ramp-up rate (Tsmax to Tp) Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) Time maintained above: −Temperature (TL) − Time (tL) Peak Temperature(TP) Time within 5°C of actual peak temperature(tp) Ramp down rate Time 25 °C to peak temperature Sn-Pb eutectic Assembly Pb-free Assembly 3°C/second max. 3°C/second max. 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds 183°C 60-150 seconds 240 +0/-5 °C 217°C 60-150 seconds 260 +0/-5 °C 10-30 seconds 20-40 seconds 6°C/second max. 6 minutes max. 6°C/second max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface. MTE030N15RE3 CYStek Product Specification Spec. No. : C838E3 Issued Date : 2016.06.23 Revised Date : Page No. : 8/8 CYStech Electronics Corp. TO-220 Dimension Marking: 4 Device Name Date Code E030 N15R □□□□ 1 3-Lead TO-220 Plastic Package CYStek Package Code: E3 2 3 Style: Pin 1.Gate 2.Drain 3.Source 4.Drain *: Typical Millimeters Min. Max. 4.400 4.600 2.250 2.550 0.710 0.910 1.170 1.370 0.330 0.650 1.200 1.400 10.250 9.910 9.750 8.950 12.650 12.950 DIM A A1 b b1 c c1 D E E1 Inches Min. Max. 0.173 0.181 0.089 0.100 0.028 0.036 0.046 0.054 0.013 0.026 0.047 0.055 0.404 0.390 0.384 0.352 0.510 0.498 DIM e e1 F H h L L1 V Φ Millimeters Min. Max. 2.540* 4.980 5.180 2.650 2.950 8.100 7.900 0.000 0.300 12.900 13.400 2.850 3.250 7/500 REF 3.400 3.800 Inches Min. Max. 0.100* 0.196 0.204 0.104 0.116 0.319 0.311 0.000 0.012 0.508 0.528 0.112 0.128 0.295 REF 0.134 0.150 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: Pure tin plated. • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0. Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. MTE030N15RE3 CYStek Product Specification