Infineon IPP50R380CE 500v coolmosâ ¢ ce power mosfet Datasheet

Product Brief
Features
500V CoolMOS™ CE Power MOSFET
The CoolMOS™ CE is a new technology platform of Infineon’s market leading
high voltage power MOSFETs designed according to the revolutionary
superjunction (SJ) principle.
500V CE portfolio provides all benefits of a fast switching SJ MOSFET while not
sacrificing ease of use. As the complete CE series, devices achieve extremely
low conduction and switching losses and can make switching applications
more efficient, more compact, lighter and cooler.
„„
Reduced energy stored in output
capacitance (Eoss)
„„
High body diode ruggedness
„„
Reduced reverse recovery charge (Qrr)
„„
Reduced gate charge (Qg)
Benefits
„„
Easy control of switching behavior
„„
Improved light load efficiency
compared to previous CoolMOS™
generations
„„
Cost attractive alternative compared
to standard MOSFETs
„„
Outstanding reliability with proven
CoolMOS™ quality combined with
high body diode ruggedness
Efficiency comparison 500V CoolMOS™ CE vs competitor standard MOSFET
CCM PFC stage, 90VAC up to 400W
Applications
IPP50R280CE vs. Standard MOS
IPP50R280CE vs. Standard MOS
efficiency @ VIN=90VAC; plug&play scenario;
Rg,ext=5Ω ; f=100kHz; VOUT=400VDC
delta efficiency @ VIN=90VAC; plug&play scenario;
Rg,ext=5Ω ; f=100kHz; VOUT=400VDC
0,6
98
0,4
IPP50R280CE
Standard MOS
96
95
94
93
0,0
-0,2
50
100 150
200 250
-0,4
92
-0,6
91
-0,8
90
IPP50R280CE
Standard MOS
0,2
delta efficiency [%]
absolute efficiency [%]
97
40% Qg reduction
-1,0
POUT [W]
www.infineon.com/ce
POUT [W]
300 350
400
„„
Consumer
„„
Lighting
„„
PC Silverbox
Product Brief
500V CoolMOS™ CE Power MOSFET
IPP50R500CE vs. Standard MOS
hard commutation on conducting body diode; half bridge configuration
High Side MOS = Low Side MOS, same RG,sum = 5Ω
Simplified test circuit
VDS, max , maximum VDS due to high dlrr/dt [V]
500
SW
490
RG,ext
480
IF
IPP50R500CE
Standard MOS
470
DUT
VDS
145µH
RG,ext
460
ISD
450
simplified waveform when switching ON of High Side
MOSFET for 2nd time (double pulse)
ISD
440
VDS max
dIF / dt
IF
12V lower drain
source overshoot
430
400V
0A
420
t
dIrr / dt
Imm
410
0V
VDS
t
400
0
1
2
3
4
5
6
IF , forward current through body diode [A]
7
„„
From IF=1 to IF=4A better behaviour observed of 500V CE
„„
IF > 4A same behaviour
„„
Body diode conduction < 2µs before turn-off
Product Portfolio CoolMOS™ CE
TO-220
FullPAK
TO-252
DPAK
TO-220
TO-247
IPAK
RDS(on)
3000 mΩ
2000 mΩ
1400 mΩ
950 mΩ
800 mΩ
650 mΩ
500 mΩ
380 mΩ
280 mΩ
190 mΩ
IPA50R950CE
IPA50R800CE*
IPA50R650CE*
IPA50R500CE
IPA50R380CE*
IPA50R280CE
IPA50R190CE*
Applications
Consumer
IPD50R3k0CE*
IPD50R2k0CE**
IPD50R1k4CE*
IPD50R950CE
IPD50R800CE*
IPD50R650CE*
IPD50R500CE
IPD50R380CE*
IPD50R280CE
Consumer, Lighting
IPU50R3k0CE*
IPU50R2k0CE**
IPU50R1k4CE*
IPU50R950CE*
IPP50R500CE
IPP50R380CE*
IPP50R280CE
IPP50R190CE*
IPW50R280CE
IPW50R190CE*
PC Silverbox
PC Silverbox
SSL: Solid State Lighting
* Samples available by Q3 / 2012
** Samples available by Q4 / 2012
Published by
Infineon Technologies Austria AG
9500 Villach, Austria
© 2012 Infineon Technologies AG.
All Rights Reserved.
Visit us:
www.infineon.com
Order Number: B152-H9688-X-X-7600-DB2012-0003
Date: 10 / 2012
Attention please!
The information given in this document shall in no event
be regarded as a guarantee of conditions or characteristics
(“Beschaffenheitsgarantie”). With respect to any examples
or hints given herein, any typical values stated herein and/
or any information regarding the application of the device,
Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property
rights of any third party.
Information
For further information on technology, delivery terms and
conditions and prices please contact your nearest Infineon
Technologies Office (www.infineon.com).
Warnings
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dangerous substances. For information on the types in
question please contact your nearest Infineon Technologies
Office. Infineon Technologies Components may only be
used in life-support devices or systems with the express
written approval of Infineon Technologies, if a failure of
such components can reasonably be expected to cause
the failure of that life-support device or system, or to affect
the safety or effectiveness of that device or system. Life
support devices or systems are intended to be implanted
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sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons
may be endangered.
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