APT5018BFLL
APT5018SFLL
500V 27A 0.180Ω
R
POWER MOS 7
FREDFET
BLL
D3PAK
®
Power MOS 7 is a new generation of low loss, high voltage, N-Channel
enhancement mode power MOSFETS. Both conduction and switching
®
losses are addressed with Power MOS 7 by significantly lowering RDS(ON)
®
and Qg. Power MOS 7 combines lower conduction and switching losses
along with exceptionally fast switching speeds inherent with APT's
patented metal gate structure.
• Lower Input Capacitance
• Lower Miller Capacitance
• Lower Gate Charge, Qg
VDSS
ID
SLL
• Increased Power Dissipation
• Easier To Drive
• TO-247 or Surface Mount D3PAK Package
• FAST RECOVERY BODY DIODE
MAXIMUM RATINGS
Symbol
TO-247
D
G
S
All Ratings: TC = 25°C unless otherwise specified.
Parameter
Drain-Source Voltage
APT5018
UNIT
500
Volts
27
Continuous Drain Current @ TC = 25°C
1
Amps
IDM
Pulsed Drain Current
VGS
Gate-Source Voltage Continuous
±30
Gate-Source Voltage Transient
±40
Total Power Dissipation @ TC = 25°C
300
Watts
Linear Derating Factor
2.4
W/°C
VGSM
PD
TJ,TSTG
108
-55 to 150
Operating and Storage Junction Temperature Range
TL
Lead Temperature: 0.063" from Case for 10 Sec.
IAR
Avalanche Current
1
27
1
Repetitive Avalanche Energy
EAS
Single Pulse Avalanche Energy
°C
300
(Repetitive and Non-Repetitive)
EAR
Volts
Amps
30
4
mJ
1210
STATIC ELECTRICAL CHARACTERISTICS
ID(on)
RDS(on)
IDSS
IGSS
VGS(th)
MIN
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA)
500
Volts
27
Amps
On State Drain Current
2
(VDS > I D(on) x R DS(on) Max, VGS = 10V)
Drain-Source On-State Resistance
2
(VGS = 10V, 13.5A)
TYP
MAX
0.180
UNIT
Ohms
Zero Gate Voltage Drain Current (VDS = 500V, VGS = 0V)
250
Zero Gate Voltage Drain Current (VDS = 400V, VGS = 0V, TC = 125°C)
1000
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
±100
nA
5
Volts
Gate Threshold Voltage (VDS = VGS, ID = 1mA)
3
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
µA
3-2003
BVDSS
Characteristic / Test Conditions
050-7027 Rev C
Symbol
APT5018BFLL-SFLL
DYNAMIC CHARACTERISTICS
Symbol
Ciss
Coss
Crss
Characteristic
Test Conditions
Input Capacitance
VGS = 0V
Output Capacitance
VDS = 25V
Total Gate Charge
Qgs
Gate-Source Charge
3
Gate-Drain ("Miller ") Charge
Turn-on Delay Time
ID = 27A @ 25°C
RESISTIVE SWITCHING
VGS = 15V
Rise Time
td(off)
VDD = 250V
Turn-off Delay Time
tf
ID = 27A @ 25°C
Fall Time
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
6
INDUCTIVE SWITCHING @ 25°C
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
ns
216
VDD = 333V, VGS = 15V
134
ID = 27A, RG = 5Ω
6
nC
2
RG = 0.6Ω
Eon
UNIT
pF
38
58
15
31
9
4
18
VDD = 250V
td(on)
MAX
2596
546
VGS = 10V
Qgd
tr
TYP
f = 1 MHz
Reverse Transfer Capacitance
Qg
MIN
INDUCTIVE SWITCHING @ 125°C
µJ
337
VDD = 333V VGS = 15V
162
ID = 27A, RG = 5Ω
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Characteristic / Test Conditions
Symbol
MIN
TYP
MAX
UNIT
IS
Continuous Source Current (Body Diode)
ISM
Pulsed Source Current
1
(Body Diode)
108
VSD
Diode Forward Voltage
2
(VGS = 0V, IS = -ID 27A)
1.3
Volts
15
V/ns
dv/
dt
Peak Diode Recovery
dv/
dt
27
5
Reverse Recovery Time
(IS = -ID 27A, di/dt = 100A/µs)
Tj = 25°C
250
Tj = 125°C
450
Q rr
Reverse Recovery Charge
(IS = -ID 27A, di/dt = 100A/µs)
Tj = 25°C
1.76
Tj = 125°C
4.23
IRRM
Peak Recovery Current
(IS = -ID 27A, di/dt = 100A/µs)
Tj = 25°C
12
Tj = 125°C
17
t rr
Amps
ns
µC
Amps
THERMAL CHARACTERISTICS
Symbol
Characteristic
RθJC
Junction to Case
RθJA
Junction to Ambient
1 Repetitive Rating: Pulse width limited by maximum junction
temperature
2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
MIN
TYP
MAX
0.42
40
0.9
0.35
0.7
0.25
0.5
0.20
Note:
PDM
Z JC, THERMAL IMPEDANCE (°C/W)
θ
050-7027 Rev C
3-2003
0.45
0.30
0.15
t1
0.3
t2
0.10
0.1
0.05
Duty Factor D = t1/t2
Peak TJ = PDM x ZθJC + TC
0.05
0
10-5
°C/W
4 Starting Tj = +25°C, L = 3.32mH, RG = 25Ω, Peak IL = 27A
5 dv/dt numbers reflect the limitations of the test circuit rather than the
device itself. IS ≤ -ID27A di/dt ≤ 700A/µs VR ≤ VDSS TJ ≤ 150°C
6 Eon includes diode reverse recovery. See figures 18, 20.
APT Reserves the right to change, without notice, the specifications and information contained herein.
0.40
UNIT
SINGLE PULSE
10-4
10-3
10-2
10-1
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
1.0
Typical Preformance Curves
APT5018BFLL-SFLL
RC MODEL
Junction
temp. ( ”C)
0.161
0.00994F
Power
(Watts)
0.259
0.236F
Case temperature
ID, DRAIN CURRENT (AMPERES)
80
VGS=15 &10V
8V
60
7.5V
7V
40
6.5V
20
6V
5.5V
VDS> ID (ON) x RDS (ON)MAX.
250µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
60
40
TJ = +125°C
20
TJ = -55°C
TJ = +25°C
0
0
2
4
6
8
10
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 4, TRANSFER CHARACTERISTICS
25
20
15
10
5
0
25
50
75
100
125
150
TC, CASE TEMPERATURE (°C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
2.5
NORMALIZED TO
= 10V @ 13.5A
GS
1.13
1.12
VGS=10V
1.10
VGS=20V
1.00
0.90
0.80
0
10
20
30
40
50
60
ID, DRAIN CURRENT (AMPERES)
FIGURE 5, RDS(ON) vs DRAIN CURRENT
D
1.00
0.95
0.90
0.85
-50
= 13.5A
GS
= 10V
2.0
1.5
1.0
0.5
0.0
-50
1.05
-25
0
25 50
75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
1.1
1.0
0.9
0.8
0.7
0.6
-50
-25
0
25
50
75 100 125 150
TC, CASE TEMPERATURE (°C)
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
3-2003
I
V
1.10
-25
0
25
50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
1.2
VGS(TH), THRESHOLD VOLTAGE
(NORMALIZED)
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
(NORMALIZED)
V
1.15
BVDSS, DRAIN-TO-SOURCE BREAKDOWN
VOLTAGE (NORMALIZED)
ID, DRAIN CURRENT (AMPERES)
30
0
5
10
15
20
25
30
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS
1.14
050-7027 Rev C
ID, DRAIN CURRENT (AMPERES)
FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL
80
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
0
APT5018BFLL-SFLL
20,000
10,000
OPERATION HERE
LIMITED BY RDS (ON)
Ciss
100µS
10
1mS
TC =+25°C
TJ =+150°C
SINGLE PULSE
C, CAPACITANCE (pF)
ID, DRAIN CURRENT (AMPERES)
108
100
10mS
10
I I ==27A
27A
D
D
VVDS=100V
DS=100V
14
VDS=250V
12
0
10
20
30
40
50
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 11,CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
IDR, REVERSE DRAIN CURRENT (AMPERES)
1
5 10
50 100
500
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
16
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
Coss
Crss
1
VDS=400V
10
8
6
4
2
0
1,000
0
20
40
60
80
100
Qg, TOTAL GATE CHARGE (nC)
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
200
100
50
TJ =+150°C
TJ =+25°C
10
5
1
0.3
0.5
0.7
0.9
1.1
1.3
1.5
VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE
60
50
V
td(off)
DD
R
G
50
40
= 333V
= 5Ω
T = 125°C
J
V
DD
R
30
G
= 333V
40
tr and tf (ns)
td(on) and td(off) (ns)
L = 100µH
= 5Ω
T = 125°C
J
L = 100µH
20
0
td(on)
10
0
10
0
20
30
40
50
ID (A)
FIGURE 14, DELAY TIMES vs CURRENT
30
40
50
ID (A)
FIGURE 15, RISE AND FALL TIMES vs CURRENT
700
DD
R
G
600
10
V
= 333V
= 5Ω
I
700
20
= 333V
= 27A
Eoff
J
SWITCHING ENERGY (µJ)
Eon
L = 100µH
500
DD
D
T = 125°C
T = 125°C
J
SWITCHING ENERGY (µJ)
0
800
V
3-2003
tr
20
10
E ON includes
diode reverse recovery.
400
300
200
Eoff
100
050-7027 Rev C
tf
30
L = 100µH
E ON includes
600
diode reverse recovery.
500
Eon
400
300
200
100
0
0
0
10
20
30
40
50
ID (A)
FIGURE 16, SWITCHING ENERGY vs CURRENT
0
5
10 15 20 25 30 35 40 45 50
RG, GATE RESISTANCE (Ohms)
FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
APT5018BFLL-SFLL
10 %
Gate Voltage
90%
T = 125 C
J
Gate Voltage
td(off)
T = 125 C
J
Drain Voltage
Drain Current
td(on)
90%
90%
tr
t
f
5%
5%
10%
Drain Current
Drain Voltage
0
10 %
Switching Energy
Switching Energy
Figure 18, Turn-on Switching Waveforms and Definitions
Figure 19, Turn-off Switching Waveforms and Definitions
APT15DF60B
IC
V DD
V CE
G
D.U.T.
Figure 20, Inductive Switching Test Circuit
3
TO-247 Package Outline
15.49 (.610)
16.26 (.640)
6.15 (.242) BSC
Drain
Drain
(Heat Sink)
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
D PAK Package Outline
5.38 (.212)
6.20 (.244)
4.98 (.196)
5.08 (.200)
1.47 (.058)
1.57 (.062)
15.95 (.628)
16.05 (.632)
Revised
4/18/95
20.80 (.819)
21.46 (.845)
1.04 (.041)
1.15 (.045)
13.79 (.543)
13.99 (.551)
13.41 (.528)
13.51 (.532)
Revised
8/29/97
11.51 (.453)
11.61 (.457)
3.50 (.138)
3.81 (.150)
0.40 (.016)
0.79 (.031)
0.020 (.001)
0.178 (.007)
2.67 (.105)
2.84 (.112)
1.65 (.065)
2.13 (.084)
19.81 (.780)
20.32 (.800)
1.01 (.040)
1.40 (.055)
1.27 (.050)
1.40 (.055)
1.22 (.048)
1.32 (.052)
1.98 (.078)
2.08 (.082)
5.45 (.215) BSC
{2 Plcs.}
Gate
Drain
Source
2.21 (.087)
2.59 (.102)
Source
Drain
Gate
Dimensions in Millimeters (Inches)
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
APT's devices are covered by one or more of the following U.S.patents:
4,895,810
5,256,583
5,045,903
4,748,103
5,089,434
5,283,202
5,182,234
5,231,474
5,019,522
5,434,095
5,262,336
5,528,058
3.81 (.150)
4.06 (.160)
(Base of Lead)
Heat Sink (Drain)
and Leads
are Plated
3-2003
4.50 (.177) Max.
050-7027 Rev C
0.46 (.018)
0.56 (.022) {3 Plcs}
2.87 (.113)
3.12 (.123)