ISC BDX68A Isc silicon pnp darlington power transistor Datasheet

isc Product Specification
INCHANGE Semiconductor
isc Silicon PNP Darlington Power Transistor
DESCRIPTION
·High DC Current Gain: hFE= 1000(Min)@ IC= -20A
·Low Saturation Voltage
·Complement to Type BDX69/A/B/C
APPLICATIONS
·Designed for audio output stages and general amplifier
and switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
VCBO
VCEO
VEBO
PARAMETER
VALUE
BDX68
-80
BDX68A
-100
BDX68B
-120
BDX68C
-140
BDX68
-60
BDX68A
-80
BDX68B
-100
BDX68C
-120
Collector-Base Voltage
UNIT
V
Collector-Emitter Voltage
V
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-25
A
ICM
Collector Current-Peak
-40
A
IB
Base Current
-500
mA
PC
Collector Power Dissipation
@ TC=25℃
150
W
TJ
Junction Temperature
200
℃
-65~200
℃
B
Tstg
Storage Temperature Range
THERMAL CHARACTERISTICS
SYMBOL
Rth j-c
PARAMETER
Thermal Resistance,Junction to Case
isc Website:www.iscsemi.cn
MAX
UNIT
0.875
℃/W
BDX68/A/B/C
isc Product Specification
INCHANGE Semiconductor
isc Silicon PNP Darlington Power Transistor
BDX68/A/B/C
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
VCEO(SUS)
PARAMETER
Collector-Emitter
Sustaining Voltage
CONDITIONS
MIN
BDX68
-60
BDX68A
-80
TYP.
MAX
IC= -100mA; L= 25mH
UNIT
V
BDX68B
-100
BDX68C
-120
VCE(sat)
Collector-Emitter Saturation Voltage
IC= -20A; IB= -80mA
-2.0
V
VBE(on)
Base-Emitter On Voltage
IC= -20A; VCE= -3V
-2.5
V
BDX68
VCB= -80V; IE= 0
VCB= -40V; IE= 0; TC=200℃
-2.0
-10
BDX68A
VCB= -100V; IE= 0
VCB= -50V; IE= 0; TC=200℃
-2.0
-10
BDX68B
VCB= -120V; IE= 0
VCB= -60V; IE= 0; TC=200℃
-2.0
-10
BDX68C
VCB= -140V; IE= 0
VCB= -70V; IE= 0; TC=200℃
-2.0
-10
BDX68
VCE= -30V; IB= 0
BDX68A
VCE= -40V; IB= 0
BDX68B
VCE= -50V; IB= 0
BDX68C
VCE= -60V; IB= 0
ICBO
ICEO
Collector
Cutoff Current
Collector
Cutoff Current
B
B
-6.0
mA
-10
mA
B
B
IEBO
Emitter Cutoff Current
VEB= -5V; IC= 0
hFE-1
DC Current Gain
IC= -5A; VCE= -3V
hFE-2
DC Current Gain
IC= -20A; VCE= -3V
hFE-3
DC Current Gain
IC= -30A; VCE= -3V
1000
COB
Output Capacitance
IE= 0 ; VCB= -10V, ftest= 1.0MHz
600
isc Website:www.iscsemi.cn
mA
2
3000
1000
pF
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