DMN53D0LDW DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Product Summary RDS(ON) ID TA = +25°C • Dual N-Channel MOSFET • Low On-Resistance 1.6Ω @ VGS = 10V 360mA • Low Input Capacitance 2.5Ω @ VGS = 4.5V 250mA • Fast Switching Speed • Small Surface Mount Package V(BR)DSS NEW PRODUCT 50V Features Description • ESD protected to 2KV • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) This new generation MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching • Halogen and Antimony Free. “Green” Device (Note 3) • Qualified to AEC-Q101 Standards for High Reliability performance, making it ideal for high efficiency power management Mechanical Data applications. • Applications • • DC-DC Converters • Power management functions • • Battery Operated Systems and Solid-State Relays • • Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Case: SOT363 Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Matte Tin Finish annealed over Alloy 42 leadframe (Lead Free Plating). Solderable per MIL-STD-202, Method 208 Memories, Transistors, etc • Terminal Connections: See Diagram • Weight: 0.006 grams (approximate) SOT363 ESD PROTECTED D2 G1 S1 S2 G2 D1 Top View Internal Schematic Top View Ordering Information (Note 4) Part Number DMN53D0LDW-7 DMN53D0LDW-13 Notes: Case SOT363 SOT363 Packaging 3000/Tape & Reel 10000/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information MM5 = Product Type Marking Code YM = Date Code Marking Y = Year (ex: B = 2014) M = Month (ex: 9 = September) Date Code Key Year Code Month Code 2014 B Jan 1 2015 C Feb 2 DMN53D0LDW Document number: DS37072 Rev. 2 - 2 Mar 3 2016 D Apr 4 May 5 2017 E Jun 6 1 of 5 www.diodes.com 2018 F Jul 7 Aug 8 2019 G Sep 9 Oct O 2020 H Nov N Dec D June 2014 © Diodes Incorporated DMN53D0LDW Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic NEW PRODUCT Symbol Value Unit Drain Source Voltage VDSS 50 V Gate-Source Voltage VGSS ±20 V Drain Current (Note 5) ID 360 mA Symbol Value Unit PD 310 mW RθJA 411 °C/W TJ, TSTG -55 to +150 °C Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Total Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient (Note 5) Operating and Storage Temperature Range Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition Drain-Source Breakdown Voltage BVDSS 50 ⎯ ⎯ V VGS = 0V, ID = 250µA Zero Gate Voltage Drain Current IDSS ⎯ ⎯ 1.0 µA VDS = 50V, VGS = 0V Gate-Body Leakage IGSS ⎯ ⎯ 10 µA VGS = ±20V, VDS = 0V VGS(th) 0.8 ⎯ 1.5 V VDS = VGS, ID = 250µA RDS (ON) ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 1.6 2.5 4.5 Ω VGS = 10V, ID = 500mA VGS = 4.5V, ID = 200mA VGS = 2.5V, ID = 100mA VSD ⎯ ⎯ 1.4 V VGS = 0V, IS = 500mA Input Capacitance Ciss ⎯ 46 ⎯ pF Output Capacitance Coss ⎯ 5.3 ⎯ pF Reverse Transfer Capacitance Crss ⎯ 4.0 ⎯ pF Total Gate Charge Qg ⎯ 0.6 ⎯ nC Gate-Source Charge Qgs ⎯ 0.2 ⎯ nC Gate-Drain Charge Qgd ⎯ 0.1 ⎯ nC tD(on) ⎯ 2.7 ⎯ ns Turn-On Rise Time tr ⎯ 2.5 ⎯ ns Turn-Off Delay Time tD(off) ⎯ 19 ⎯ ns tf ⎯ 11 ⎯ ns OFF CHARACTERISTICS (Note 6) ON CHARACTERISTICS (Note 6) Gate Threshold Voltage Static Drain-Source On-Resistance Source-Drain Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 7) Turn-On Delay Time Turn-Off Fall Time Notes: VDS = 25V, VGS = 0V f = 1.0MHz VGS = 4.5V, VDS = 10V, ID = 250mA VDD = 30V, VGS = 10V, RG = 25Ω, ID = 200mA 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. Short duration pulse test used to minimize self-heating effect. 7. Guaranteed by design. Not subject to product testing. DMN53D0LDW Document number: DS37072 Rev. 2 - 2 2 of 5 www.diodes.com June 2014 © Diodes Incorporated DMN53D0LDW 1.5 0.8 0.9 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) VDS = 5V VGS = 5V VGS = 4.5V VGS = 2.5V VGS = 3.5V 0.6 0.3 0.6 TA = 150°C 0.4 TA = 85°C TA = 125°C 0.2 VGS = 2V TA = 25°C VGS = 1.8V 0 1 2 3 4 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 1 Typical Output Characteristics 5 1 0.9 VGS = 5V 0.8 VGS = 10V 0.7 0.6 0.5 0 0.2 0.4 0.6 0.8 ID, DRAIN-SOURCE CURRENT (A) Figure 3 Typical On-Resistance vs. Drain Current and Gate Voltage 1 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 2.4 2.0 VGS = 10V ID = 500mA 1.6 VGS = 5V ID = 300mA 1.2 0.8 0.4 -50 0 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 0.0 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) NEW PRODUCT 1.2 1 VGS = 3V VGS = 10V -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Figure 5 On-Resistance Variation with Temperature DMN53D0LDW Document number: DS37072 Rev. 2 - 2 3 of 5 www.diodes.com TA = -55°C 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 VGS, GATE-SOURCE VOLTAGE (V) Figure 2 Typical Transfer Characteristics 5 2.5 VGS = 4.5V 2 TA = 150°C T A = 125°C 1.5 T A = 85°C 1 T A = 25°C 0.5 0 TA = -55°C 0 0.2 0.4 0.6 0.8 ID, DRAIN CURRENT (A) Figure 4 Typical On-Resistance vs. Drain Current and Temperature 1 2 1.8 1.6 1.4 VGS = 5V ID = 300mA 1.2 1 0.8 VGS = 10V ID = 500mA 0.6 0.4 0.2 0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Figure 6 On-Resistance Variation with Temperature June 2014 © Diodes Incorporated DMN53D0LDW 0.8 IS, SOURCE CURRENT (A) VGS(th), GATE THRESHOLD VOLTAGE (V) 1.0 1.8 1.6 1.4 ID = 1mA 1.2 ID = 250µA 1.0 0.8 TA = 150°C 0.6 TA = 125°C 0.4 TA = 25°C TA = 85°C 0.2 TA = -55°C 0.6 -50 0 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Figure 7 Gate Threshold Variation vs. Ambient Temperature 0 0.3 0.6 0.9 1.2 1.5 VSD, SOURCE-DRAIN VOLTAGE (V) Figure 8 Diode Forward Voltage vs. Current 10 100 Ciss VGS GATE THRESHOLD VOLTAGE (V) CT, JUNCTION CAPACITANCE (pF) NEW PRODUCT 2.0 10 Coss Crss 8 6 VDS = 10V ID = 250mA 4 2 f = 1MHz 1 0 5 10 15 20 25 30 35 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 9 Typical Junction Capacitance 40 0 0 0.3 0.6 0.9 1.2 1.5 Qg, TOTAL GATE CHARGE (nC) Figure 10 Gate Charge Package Outline Dimensions Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version. A SOT363 Dim Min Max Typ A 0.10 0.30 0.25 B 1.15 1.35 1.30 C 2.00 2.20 2.10 D 0.65 Typ F 0.40 0.45 0.425 H 1.80 2.20 2.15 J 0 0.10 0.05 K 0.90 1.00 1.00 L 0.25 0.40 0.30 M 0.10 0.22 0.11 0° 8° α All Dimensions in mm B C H K J DMN53D0LDW Document number: DS37072 Rev. 2 - 2 M D F L 4 of 5 www.diodes.com June 2014 © Diodes Incorporated DMN53D0LDW Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. C2 NEW PRODUCT Z C2 Dimensions Value (in mm) Z 2.5 G 1.3 X 0.42 Y 0.6 C1 1.9 C2 0.65 C1 G Y X IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated. LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2014, Diodes Incorporated www.diodes.com DMN53D0LDW Document number: DS37072 Rev. 2 - 2 5 of 5 www.diodes.com June 2014 © Diodes Incorporated