MT200C18T2 Thyristor Modules VRRM / VDRM 800 to 1800V ITAV 200A Applications Power Converters Lighting Control DC Motor Control and Drives Heat and temperature control y y y y Circuit Features y y y y y y International standard package High Surge Capability Glass passivated chip Simple Mounting Heat transfer through aluminum oxide DBC ceramic isolated metal baseplate UL recognized applied for file no. E360040 Module Type TYPE VRRM VRSM MT200C08T2 MT200C12T2 MT200C16T2 MT200C18T2 800V 1200V 1600V 1800V 900V 1300V 1700V 1900V Maximum Ratings Symbol Conditions Values Units ITAV o Sine 180 ;Tc=85℃ 200 A ITSM TVJ =45℃ t=10ms, sine TVJ =125℃ t=10ms, sine 5500 5000 A i2t TVJ =45℃ t=10ms, sine TVJ =125℃ t=10ms, sine 151000 125000 A2s Visol a.c.50HZ;r.m.s.;1min 3000 V Tvj -40 to 130 ℃ Tstg -40 to 125 Mt To terminals(M6) 3±15% ℃ Nm Ms To heatsink(M6) 5±15% Nm di/dt TVJ= TVJM , 2/3VDRM ,IG =500mA Tr<0.5us,tp>6us 200 A/us dv/dt TJ= TVJM ,2/3VDRM, linear voltage rise 1000 V/us a Maximum allowable acceleration 50 m/s2 Weight Module(Approximately) 165 g Symbol Conditions Values Units Rth(j-c) Rth(c-s) Cont.;per thyristor / per module per thyristor / per module 0.16/0.08 0.1/0.05 ℃/W Thermal Characteristics Document Number: S-M0040 Rev.1.0, May.31, 2013 ℃/W www.apt-semi.com 1 MT200C18T2 Electrical Characteristics Values Typ. Symbol Conditions VTM T=25℃ ITM =620A TVJ =TVJM ,VR=VRRM ,VD=VDRM 1.7 V 40 mA 0.85 V rT For power-loss calculations only (TVJ =125℃) TVJ =TVJM 1.5 mΩ VGT TVJ =25℃ , VD =6V 3 V IGT VGD TVJ =25℃ , VD =6V TVJ =125℃ , VD =2/3VDRM 200 0.25 mA V IGD TVJ =125℃ , VD =2/3VDRM 10 mA IL TVJ =25℃ , RG = 33 Ω TVJ =25℃ , VD =6V 300 1000 mA 150 400 1 mA us 100 us IRRM/IDRM VTO IH tgd tq Document Number: S-M0040 Rev.1.0, May.31, 2013 Min. TVJ =25℃, IG=1A, diG/dt=1A/us TVJ =TVJM Max. Units www.apt-semi.com 2 MT200C18T2 Performance Curves 300 300 A W rec.120 200 DC 240 sin.180 DC rec.60 180 sin.180 rec.30 rec.120 120 100 rec.60 rec.30 60 PTAV 0 ITAVM 0 ITAV 50 100 150 0 A 200 0 Tc Fig1. Power dissipation 100 6000 Zth(j-S) ℃/ W 0.1 1 10 3000 0 S 100 Fig3. Transient thermal impedance 10 100 ms 1000 Fig4. Max Non-Repetitive Forward Surge Current 900 A 50HZ A Zth(j-C) 0.1 0.001 t 0.01 ℃ 130 Fig2.Forward Current Derating Curve 0.30 0 50 Typ. 600 max. 300 25℃ - - -125℃ IT 0 0 VTM 0.5 1.0 1.5 V 2.0 Fig5. Forward Characteristics Document Number: S-M0040 Rev.1.0, May.31, 2013 www.apt-semi.com 3 MT200C18T2 100 1/2·MT200C18T2 V 20V;20Ω 10 VGT 1 ∧ -40℃ PG(tp) Tvj 25℃ 125℃ VGD125℃ VG IGD125℃ 0.1 0.001 IG 0.01 IGT 0.1 1 10 A 100 Fig6. Gate trigger Characteristics Package Outline Information CASE: T2 Dimensions in mm Document Number: S-M0040 Rev.1.0, May.31, 2013 www.apt-semi.com 4