AP4409AGEM-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Simple Drive Requirement
D
D
▼ Low On-resistance
D
D
▼ Fast Switching Characteristic
G
▼ RoHS Compliant
SO-8
S
S
BVDSS
-35V
RDS(ON)
7.5mΩ
ID
-14.5A
S
Description
D
Advanced Power MOSFETs from APEC provide the designer with the
best combination of fast switching, ruggedized device design, low onresistance and cost-effectiveness.
G
The SO-8 package is widely preferred for all commercial-industrial
surface mount applications and suited for low voltage applications such
as DC/DC converters.
S
o
otherwise specified)
Absolute Maximum Ratings@Tj=25 C(unless
.
Parameter
Symbol
Rating
Units
VDS
Drain-Source Voltage
-35
V
VGS
Gate-Source Voltage
+20
V
-14.5
A
-12
A
-50
A
ID@TA=25℃
ID@TA=70℃
3a
Drain Current , VGS @ 10V
3a
Drain Current , VGS @ 10V
1
IDM
Pulsed Drain Current
PD@TA=25℃
Total Power Dissipation
2.5
W
Linear Derating Factor
0.02
W/℃
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Parameter
Symbol
Rthj-a
3a
Maximum Thermal Resistance, Junction-ambient
Value
Unit
50
℃/W
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
Data and specifications subject to change without notice
1
201412312AP
AP4409AGEM-HF
o
Electrical Characteristics@Tj=25 C(unless otherwise specified)
Symbol
BVDSS
RDS(ON)
Parameter
Test Conditions
Drain-Source Breakdown Voltage
Min.
Typ.
-35
-
-
V
VGS=-10V, ID=-7A
-
-
7.5
mΩ
VGS=-4V, ID=-7A
-
-
15
mΩ
VGS=0V, ID=-250uA
Static Drain-Source On-Resistance
2
Max. Units
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=-250uA
-1
-
-3
V
gfs
Forward Transconductance
VDS=-10V, ID=-7A
-
7
-
S
IDSS
Drain-Source Leakage Current
VDS=-30V, VGS=0V
-
-
-10
uA
Drain-Source Leakage Current (T j=70 C) VDS=-24V, VGS=0V
-
-
-25
uA
Gate-Source Leakage
-
-
+30
uA
o
IGSS
VGS=+20V, VDS=0V
2
ID=-14A
-
58
90
nC
Gate-Source Charge
VDS=-30V
-
7
-
nC
Gate-Drain ("Miller") Charge
VGS=-4.5V
-
37
-
nC
Qg
Total Gate Charge
Qgs
Qgd
2
td(on)
Turn-on Delay Time
VDS=-15V
-
15
-
ns
tr
Rise Time
ID=-1A
-
13
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω
-
76
-
ns
tf
Fall Time
VGS=-10V
-
60
-
ns
Ciss
Input Capacitance
VGS=0V
-
4100 6600
pF
Coss
Output Capacitance
VDS=-25V
-
640
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
530
-
pF
Min.
Typ.
IS=-14A, VGS=0V
-
-
-1.3
V
.
Source-Drain Diode
Symbol
VSD
Parameter
Forward On Voltage
2
2
Test Conditions
Max. Units
trr
Reverse Recovery Time
IS=-14A, VGS=0V,
-
46
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
44
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
2
3.Surface mounted on 1 in copper pad of FR4 board （a）, t <10sec
(a) 1 in2 pad of
2 oz copper
(b) 125℃/W when
mounted on a 0.003
in2 pad of 2 oz copper
2
AP4409AGEM-HF
50
50
o
T A = 25 C
V G = - 3.0 V
30
20
V G = - 3.0 V
30
20
10
10
0
0
0
1
2
3
0
4
1
2
3
4
-V DS , Drain-to-Source Voltage (V)
-V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1.8
18
ID=-7A
T A =25 ℃
I D =-7A
V G =-10V
14
12
.
10
Normalized RDS(ON)
16
RDS(ON\) (mΩ)
-10V
- 7.0 V
- 5.0 V
- 4.5 V
40
-ID , Drain Current (A)
40
-ID , Drain Current (A)
o
T A = 150 C
- 10V
-7.0 V
-5.0 V
-4.5 V
1.4
1.0
8
0.6
6
2
4
6
8
10
-50
0
50
100
150
o
-V GS , Gate-to-Source Voltage (V)
T j , Junction Temperature ( C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.8
10
8
o
T j =150 C
-IS(A)
Normalized VGS(th)
1.4
o
T j =25 C
6
4
1.0
0.6
2
0
0.2
0
0.2
0.4
0.6
0.8
1
-V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.2
-50
0
50
100
150
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP4409AGEM-HF
16
f=1.0MHz
10000
C iss
12
C (pF)
-VGS , Gate to Source Voltage (V)
ID= -14A
V DS = - 30 V
8
1000
C oss
C rss
4
0
100
0
30
60
90
1
120
5
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
13
17
21
25
29
Fig 8. Typical Capacitance Characteristics
100
1ms
10ms
1
100ms
1s
0.1
T A =25 o C
Single Pulse
DC
.
Normalized Thermal Response (Rthja)
1
10
-ID (A)
9
-V DS , Drain-to-Source Voltage (V)
Duty factor=0.5
0.2
0.1
0.1
0.05
0.02
PDM
0.01
t
0.01
T
Duty factor = t/T
Peak Tj = PDM x Rthja + T a
Single Pulse
Rthja=125oC/W
0.001
0.01
0.01
0.1
1
10
100
0.0001
0.001
-V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
0.01
0.1
1
10
100
1000
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
VG
VDS
90%
QG
-4.5V
QGS
QGD
10%
VGS
td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
Charge
Q
Fig 12. Gate Charge Waveform
4
AP4409AGEM-HF
MARKING INFORMATION
Part Number
4409AGEM
YWWSSS
meet Rohs requirement
for low voltage MOSFET only
Package Code
Date Code (YWWSSS)
Y：Last Digit Of The Year
WW：Week
SSS：Sequence
.
5