Vishay BA779-G Wide frequency range 10 mhz to 1 ghz Datasheet

BA779-G
www.vishay.com
Vishay Semiconductors
RF PIN Diodes
FEATURES
• Wide frequency range 10 MHz to 1 GHz
3
• AEC-Q101 qualified
• Base P/N-HG3 - green, automotive grade
1
• Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
2
APPLICATIONS
• Current controlled HF resistance in adjustable
attenuators
MECHANICAL DATA
Case: SOT-23
Weight: approx. 8.1 mg
Packaging codes/options:
08/3K per 7" reel (8 mm tape), 15K/box
PARTS TABLE
PART
BA779-G
ORDERING CODE
TYPE MARKING
INTERNAL
CONSTRUCTION
REMARKS
BA779-HG3-08
PH1
Single diode
Tape and reel
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PART
SYMBOL
VALUE
Reverse voltage
TEST CONDITION
VR
30
UNIT
V
Forward continuous current
IF
50
mA
THERMAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
Thermal resistance junction to ambient air
TEST CONDITION
SYMBOL
VALUE
UNIT
on PC board
50 mm x 50 mm x 1.6 mm
RthJA
500
K/W
Junction temperature
Tj
125
°C
Storage temperature range
Tstg
- 55 to + 150
°C
Operating temperature range
Top
- 55 to + 125
°C
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
PART
SYMBOL
MIN.
TYP.
MAX.
UNIT
Forward voltage
IF = 20 mA
VF
1
V
Reverse current
VR = 30 V
IR
0.05
μA
f = 100 MHz, VR = 0 V
CD
0.5
pF
f = 100 MHz, IF = 1.5 mA
rf
50
Diode capacitance
Differential forward resistance
Reverse impedance
f = 100 MHz, VR = 0 V
Minority carrier lifetime
IF = 10 mA, IR = 10 mA
Rev. 1.2, 25-Feb-13
BA779-G
zr

5

k
4
μs
Document Number: 83321
1
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BA779-G
www.vishay.com
Vishay Semiconductors
TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
IF - Forward Current (mA)
100
10
Tamb = 25 °C
1
Scattering Limit
0.1
0.01
0
95 9735
0.4
0.8
1.2
1.6
2.0
VF - Forward Voltage (V)
rf - Differential Forward Resistance (Ω)
Fig. 1 - Forward Current vs. Forward Voltage
10 000
1000
100
10
1
0.001
f > 20 MHz
Tj = 25 °C
0.01
0.1
1
10
IF - Forward Current (mA)
95 9734
a - Typical Cross Modulation Distortion (dB)
Fig. 2 - Differential Forward Resistance vs. Forward Current
20
Π - Circuit with 10 dB Attenuation
V 0 = 40 dBmV
0
f 1 = 100 MHz unmodulated
- 20
- 40
- 60
- 80
95 9733
0
20
40
60
80
f 2 , modulated with 200 kHz, m = 100 % (MHz)
Fig. 3 - Typ. Cross Modulation Distortion vs. Frequency f2
Rev. 1.2, 25-Feb-13
Document Number: 83321
2
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BA779-G
www.vishay.com
Vishay Semiconductors
PACKAGE DIMENSIONS in millimeters (inches): SOT-23
1.15 (0.045)
0° t
o8
°
0.2 (0.008)
0.098 (0.004)
0.175 (0.007)
0.1 (0.004) max.
0.550 ref. (0.022 ref.)
0.9 (0.035)
3.1 (0.122)
2.8 (0.110)
0.5 (0.020)
0.45 (0.018)
0.45 (0.018)
0.35 (0.014)
0.35 (0.014)
0.3 (0.012)
2.6 (0.102)
2.35 (0.093)
Foot print recommendation:
1 (0.039)
0.9 (0.035)
Document no.: 6.541-5014.01-4
Rev. 8 - Date: 23.Sept.2009
17418
Rev. 1.2, 25-Feb-13
0.9 (0.035)
0.7 (0.028)
2 (0.079)
1.43 (0.056)
1.20 (0.047)
0.45 (0.018)
0.35 (0.014)
1 (0.039)
0.9 (0.035)
0.95 (0.037)
0.95 (0.037)
Document Number: 83321
3
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
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Vishay
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
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Revision: 13-Jun-16
1
Document Number: 91000
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