MMBTRA101SS…MMBTRA106SS PNP Silicon Epitaxial Planar Transistor for switching and interface circuit and drive circuit applications Collector (Output) Features • With built-in bias resistors Base (Input) R1 R2 • Simplify circuit design SOT-23 Plastic Package • Reduce a quantity of parts and Emitter (Common) manufacturing process Resistor Values Type R1 (KΩ) R2 (KΩ) MMBTRA101SS 4.7 4.7 MMBTRA102SS 10 10 MMBTRA103SS 22 22 MMBTRA104SS 47 47 MMBTRA105SS 2.2 47 MMBTRA106SS 4.7 47 Absolute Maximum Ratings (Ta = 25 OC) Parameter Output Voltage Value Unit -VO 50 V MMBTRA101SS 20, -10 MMBTRA102SS 30, -10 MMBTRA103SS Input Voltage Symbol MMBTRA104SS -VI 40, -10 40, -10 MMBTRA105SS 12, -5 MMBTRA106SS 20, -5 V Output Current -IO 100 mA Total Power Dissipation Ptot 200 mW Junction Temperature Tj 150 O Storage Temperature Range TS - 55 to + 150 O C C SEMTECH ELECTRONICS LTD. ® (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 08/12/2006 MMBTRA101SS…MMBTRA106SS Characteristics at Ta = 25 OC Parameter DC Current Gain at -VO = 5 V, -IO = 10 mA Output Cutoff Current at -VO = 50 V Input Current at -VI = 5 V MMBTRA101SS MMBTRA102SS MMBTRA103SS MMBTRA104SS MMBTRA105SS MMBTRA106SS MMBTRA101SS MMBTRA102SS MMBTRA103SS MMBTRA104SS MMBTRA105SS MMBTRA106SS Output Voltage at -IO = 10 mA, -II = 0.5 mA Input Voltage (ON) at -VO = 0.2 V, -IO = 5 mA Input Voltage (OFF) at -VO = 5 V, -IO = 0.1 mA MMBTRA101SS MMBTRA102SS MMBTRA103SS MMBTRA104SS MMBTRA105SS MMBTRA106SS MMBTRA101SS~104SS MMBTRA105SS~106SS Transition Frequency at -VO = 10 V, -IO = 5 mA 1) Symbol Min. Typ. Max. Unit GI 30 50 70 80 80 80 - - - -IO(OFF) - - 500 nA -II - - 1.8 0.88 0.36 0.18 3.6 1.8 mA -VO(ON) - - 0.3 V -VI(ON) - - 2 2.4 3 5 1.1 1.3 1 0.5 - - V - 200 - MHz -VI(OFF) fT 1) V Characteristic of transistor only. SEMTECH ELECTRONICS LTD. ® (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 08/12/2006