DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D154 BAT254 Schottky barrier diode Product data sheet Supersedes data of 1999 Apr 22 2002 May 28 NXP Semiconductors Product data sheet Schottky barrier diode BAT254 FEATURES DESCRIPTION • Low forward voltage Planar Schottky barrier diode encapsulated in a SOD110 very small ceramic SMD package. • Guard ring protected • Very small ceramic SMD package. cathode mark handbook, 4 columns APPLICATIONS a k k a • Ultra high-speed switching • Voltage clamping • Protection circuits • Blocking diodes. bottom view side view top view MAM214 Marking code: L4. Fig.1 Simplified outline (SOD110) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VR continuous reverse voltage − 30 V IF continuous forward current − 200 mA IFRM repetitive peak forward current tp ≤ 1 s; δ ≤ 0.5 − 300 mA IFSM non-repetitive peak forward current tp < 10 ms − 600 mA Tstg storage temperature −65 +150 °C Tj junction temperature − 125 °C Tamb operating ambient temperature −65 +125 °C 2002 May 28 2 NXP Semiconductors Product data sheet Schottky barrier diode BAT254 ELECTRICAL CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL VF PARAMETER forward voltage CONDITIONS MAX. UNIT see Fig.2 IF = 0.1 mA 240 mV IF = 1 mA 320 mV IF = 10 mA 400 mV IF = 30 mA 500 mV IF = 100 mA 800 mV IR reverse current VR = 25 V; note 1; see Fig.3 2 μA trr reverse recovery time when switched from IF = 10 mA to IR = 10 mA; RL = 100 Ω; measured at IR = 1 mA; see Fig.5 5 ns Cd diode capacitance f = 1 MHz; VR = 1 V; see Fig.4 10 pF Note 1. Pulse test: tp = 300 μs; δ = 0.02. THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER thermal resistance from junction to ambient CONDITIONS note 1 Note 1. Refer to SOD110 standard mounting conditions. 2002 May 28 3 VALUE UNIT 315 K/W NXP Semiconductors Product data sheet Schottky barrier diode BAT254 GRAPHICAL DATA MSA892 IF (mA) MSA893 10 3 3 10halfpage handbook, I R (μA) (1) (2) (3) 10 2 (1) 10 2 (2) 10 10 (1) 1 10 1 (2) (3) 1 (3) 10 1 0 0.4 0.8 VF (V) 1.2 0 10 (1) Tamb = 125 °C. (2) Tamb = 85 °C. (3) Tamb = 25 °C. (1) Tamb = 125 °C. (2) Tamb = 85 °C. (3) Tamb = 25 °C. Fig.2 Fig.3 Forward current as a function of forward voltage; typical values. 20 30 VR (V) Reverse current as a function of reverse voltage; typical values. MSA891 15 handbook, halfpage Cd (pF) handbook, halfpage I F dI F 10 dt 10% t 5 Qr 90% IR 0 0 10 20 VR (V) tf MRC129 - 1 30 f = 1 MHz; Tamb = 25 °C. Fig.4 Diode capacitance as a function of reverse voltage; typical values. 2002 May 28 Fig.5 Reverse recovery definitions. 4 NXP Semiconductors Product data sheet Schottky barrier diode BAT254 PACKAGE OUTLINE Very small ceramic rectangular surface mounted package D SOD110 E A y cathode identifier DIMENSIONS (mm are the original dimensions) 1 2 0 0.5 1 mm UNIT A max. D E y mm 1.6 2.10 1.90 1.40 1.10 0.1 scale OUTLINE VERSION REFERENCES IEC JEDEC EIAJ ISSUE DATE 97-04-14 SOD110 2002 May 28 EUROPEAN PROJECTION 5 NXP Semiconductors Product data sheet Schottky barrier diode BAT254 DATA SHEET STATUS DOCUMENT STATUS(1) PRODUCT STATUS(2) DEFINITION Objective data sheet Development This document contains data from the objective specification for product development. Preliminary data sheet Qualification This document contains data from the preliminary specification. Product data sheet Production This document contains the product specification. Notes 1. Please consult the most recently issued document before initiating or completing a design. 2. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. DISCLAIMERS above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. General ⎯ Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. 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Export might require a prior authorization from national authorities. Quick reference data ⎯ The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Applications ⎯ Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values ⎯ Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions 2002 May 28 6 NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were made to the content, except for the legal definitions and disclaimers. Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: [email protected] © NXP B.V. 2009 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 613514/03/pp7 Date of release: 2002 May 28 Document order number: 9397 750 09733