FAST CMOS BUFFER/CLOCK DRIVER IDT49FCT805BT/CT IDT49FCT806BT/CT Integrated Device Technology, Inc. • Military product compliant to MIL-STD-883, Class B FEATURES: • • • • • • • • • • • 0.5 MICRON CMOS Technology Guaranteed low skew < 500ps (max.) Very low duty cycle distortion < 600ps (max.) Low CMOS power levels TTL compatible inputs and outputs TTL level output voltage swings High drive: -32mA IOH, 48mA IOL Two independent output banks with 3-state control 1:5 fanout per bank ‘Heartbeat’ monitor output ESD > 2000V per MIL-STD-883, Method 3015; > 200V using machine model (C = 200pF, R = 0) • Available in DIP, SOIC, SSOP, QSOP, Cerpack and LCC packages DESCRIPTION: The IDT49FCT805BT/CT and IDT49FCT806BT/CT are clock drivers built using advanced dual metal CMOS technology. The IDT49FCT805BT/CT is a non-inverting clock driver and the IDT49FCT806BT/CT is an inverting clock driver. Each device consists of two banks of drivers. Each bank drives five output buffers from a standard TTL compatible input. The 805BT/CT and 806BT/CT have extremely low output skew, pulse skew, and package skew. The devices has a "heartbeat" monitor for diagnostics and PLL driving. The MON output is identical to all other outputs and complies with the output specifications in this document. The 805BT/CT and 806BT/CT offer low capacitance inputs with hysteresis. FUNCTIONAL BLOCK DIAGRAMS IDT49FCT805T IDT49FCT806T OEA INA INB OEA 5 5 OA1-OA5 INA OB1-OB5 INB 5 5 OA1-OA5 OB1-OB5 OEB OEB MON MON 2920 drw 02 2920 drw 01 The IDT logo is a registered trademark of Integrated Device Technology, Inc. MILITARY AND COMMERCIAL TEMPERATURE RANGES 1996 Integrated Device Technology, Inc. 9.2 OCTOBER 1995 DSC-2920/5 1 IDT49FCT805BT/CT, 806BT/CT FAST CMOS BUFFER/CLOCK DRIVER MILITARY AND COMMERCIAL TEMPERATURE RANGES PIN CONFIGURATIONS OA2 3 18 OB2 OA3 4 17 4 OB3 GND 5 16 GND OA4 6 15 OB4 OA5 7 GND 14 OB5 8 GND 5 OA4 6 OA5 7 GND 8 13 MON OEA 9 12 OEB INA 10 11 INB 3 2 20 19 1 L20-2 18 OB2 17 OB3 16 GND 15 OB4 14 OB5 9 10 11 12 13 OEA P20-1 D20-1 SO20-2 SO20-7 SO20-8 & E20-1 OA3 OB1 OB1 MON 19 VCC 2 OEB OA1 INDEX VCC VCC INB 20 OA1 1 INA VCC OA2 IDT49FCT805T LCC TOP VIEW 2920 drw 04 DIP/SOIC/SSOP/QSOP/CERPACK TOP VIEW 2920 drw 03 OA1 2 19 OB1 OA2 3 18 OB2 OA3 4 17 OB3 16 GND 15 OB4 5 OA4 6 4 GND 5 OA4 6 OA5 GND 3 2 20 19 1 18 OB2 17 OB3 16 GND 7 15 OB4 8 14 OB5 L20-2 MON OEA 9 12 OEB INA 10 11 INB MON 13 GND OEB 8 7 INB OB5 OA5 INA 14 9 10 11 12 13 OEA GND P20-1 D20-1 SO20-2 SO20-7 SO20-8 & E20-1 OA3 OB1 VCC VCC 20 VCC 1 OA1 INDEX VCC OA2 IDT49FCT806T LCC TOP VIEW 2920 drw 06 DIP/SOIC/SSOP/QSOP/CERPACK TOP VIEW 2920 drw 05 FUNCTION TABLE(1) PIN DESCRIPTION Outputs Pin Names OEA, OEB Description 3-State Output Enable Inputs (Active LOW) INA, INB Clock Inputs MON OAn, OBn MON OAn, OBn Clock Outputs (FCT805T) L L L L H H OAn, OBn Clock Outputs (FCT806T) L H H H L L MON Monitor Output (FCT805T) H L Z L Z H MON Monitor Output (FCT806T) H H Z H Z L Inputs OEA, OEB 2920 tbl 01 49FCT805T INA, INB OAn, OBn NOTE: 1. H = HIGH, L = LOW, Z = High Impedance 9.2 49FCT806T 2920 tbl 02 2 IDT49FCT805BT/CT, 806BT/CT FAST CMOS BUFFER/CLOCK DRIVER MILITARY AND COMMERCIAL TEMPERATURE RANGES ABSOLUTE MAXIMUM RATINGS(1) Symbol Rating VTERM(2) Terminal Voltage with Respect to GND VTERM(3) Terminal Voltage with Respect to GND TA Operating Temperature TBIAS Temperature Under Bias TSTG Storage Temperature I OUT DC Output Current CAPACITANCE (TA = +25°C, f = 1.0MHz) Commercial –0.5 to +7.0 Military –0.5 to +7.0 Unit V –0.5 to VCC +0.5 –0.5 to VCC +0.5 V 0 to +70 –55 to +125 °C –55 to +125 –65 to +135 °C –55 to +125 –65 to +150 °C –60 to +120 –60 to +120 mA Symbol Parameter(1) CIN Input Capacitance COUT Output Capacitance Conditions VIN = 0V Typ. 4.5 VOUT = 0V 5.5 Max. Unit 6.0 pF 8.0 pF 2920 lnk 04 NOTE: 1. This parameter is measured at characterization but not tested. 2920 lnk 03 NOTES: 1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. No terminal voltage may exceed VCC by +0.5V unless otherwise noted. 2. Input and VCC terminals. 3. Output and I/O terminals. DC ELECTRICAL CHARACTERISTICS OVER OPERATING RANGE Following Conditions Apply Unless Otherwise Specified Commercial: TA = 0°C to +70°C, V CC = 5.0V ± 5%; Military: TA = –55°C to +125°C, VCC = 5.0V ± 10% Symbol VIH VIL Parameter Input HIGH Level Test Conditions(1) Guaranteed Logic HIGH Level Input LOW Level Min. 2.0 Typ.(2) — Max. — Unit V Guaranteed Logic LOW Level — — 0.8 V Input HIGH Current (5) VCC = Max. VI = 2.7V — — ±1 µA II L Input LOW Current (5) VCC = Max. VI = 0.5V — — ±1 µA I OZH High Impedance Output Current VCC = Max. VO = 2.7V — — ±1 µA VO = 0.5V — — ±1 µA II H I OZL (3-State Output pins) (5) Current (5) II Input HIGH VIK Clamp Diode Voltage VCC = Max., VI = VCC (Max.) — — ±1 µA VCC = Min., IIN= –18mA — –0.7 –1.2 V –60 –120 –225 mA 2.4 3.3 — V 2.0 3.0 — — 0.3 0.55 V — — ±1 µA — 150 — mV — 5 500 µA Max.(3) , I OS Short Circuit Current VCC = VOH Output HIGH Voltage VCC = Min. VIN = VIH or VIL VOL Output LOW Voltage IOFF Input/Output Power Off Leakage(5) VH Input Hysteresis for all inputs I CCL I CCH I CCZ Quiescent Power Supply Current VO = GND I OH = –12mA MIL. I OH = –15mA COM'L. I OH = –24mA MIL. I OH = –32mA COM'L.(4) VCC = Min. I OL = 32mA MIL. VIN = VIH or VIL I OL = 48mA COM'L. VCC = 0V, VIN or VO ≤ 4.5V — VCC = Max., VIN = GND or V CC NOTES: 1. For conditions shown as Max. or Min., use appropriate value specified under Electrical Characteristics for the applicable device type. 2. Typical values are at Vcc = 5.0V, +25°C ambient. 3. Not more than one output should be tested at one time. Duration of the test should not exceed one second. 4. Duration of the condition can not exceed one second. 5. The test limit for this parameter is ± 5µA at TA = –55°C. 9.2 2920 lnk 05 3 IDT49FCT805BT/CT, 806BT/CT FAST CMOS BUFFER/CLOCK DRIVER MILITARY AND COMMERCIAL TEMPERATURE RANGES POWER SUPPLY CHARACTERISTICS Test Conditions(1) Parameter Min. Typ.(2) Max. Unit — 0.5 2.0 mA ∆ICC Quiescent Power Supply Current TTL Inputs HIGH VCC = Max. VIN = 3.4V(3) ICCD Dynamic Power Supply Current (4) VCC = Max. Outputs Open OEA = OEB = GND 50% Duty Cycle VIN = VCC VIN = GND — 60 100 µA/ MHz/bit IC Total Power Supply Current (6) VCC = Max. Outputs Open fo = 25MHz 50% Duty Cycle OEA = OEB =VCC Mon. Output Toggling VIN = VCC VIN = GND — 1.5 3.0 mA VIN = 3.4V VIN = GND — 1.8 4.0 VCC = Max. Outputs Open fo = 50MHz 50% Duty Cycle OEA = OEB = GND Eleven Outputs Toggling VIN = VCC VIN = GND — 33 55.5 (5) VIN = 3.4V VIN = GND — 33.5 57.5 (5) NOTES: 1. For conditions shown as Max. or Min., use appropriate value specified under Electrical Characteristics for the applicable device type. 2. Typical values are at VCC = 5.0V, +25°C ambient. 3. Per TTL driven input; (VIN = 3.4V); all other inputs at VCC or GND. 4. This parameter is not directly testable, but is derived for use in Total Power Supply Calculations. 5. Values for these conditions are examples of the ICC formula. These limits are guaranteed but not tested. 6. IC = IQUIESCENT + IINPUTS + IDYNAMIC IC = ICC + ∆ICC DHNT + ICCD (fONO) ICC = Quiescent Current (ICCL, ICCH and ICCZ) ∆ICC = Power Supply Current for a TTL High Input (VIN = 3.4V) DH = Duty Cycle for TTL Inputs High NT = Number of TTL Inputs at DH ICCD = Dynamic Current Caused by an Input Transition Pair (HLH or LHL) fO= Output Frequency NO= Number of Outputs at fO All currents are in milliamps and all frequencies are in megahertz. 9.2 2920 tbl 06 4 IDT49FCT805BT/CT, 806BT/CT FAST CMOS BUFFER/CLOCK DRIVER MILITARY AND COMMERCIAL TEMPERATURE RANGES SWITCHING CHARACTERISTICS OVER OPERATING RANGE(3,4) IDT49FCT805BT/806BT Com'l. Symbol Parameter tPLH Propagation Delay INA to OAn, INB to OBn tPHL tR Output Rise Time Condition(1) CL = 50pF RL = 500Ω Min. (2) 1.5 Mil. Max. Min. (2) 5.0 1.5 IDT49FCT805CT/806CT Com'l. Max. Min. (2) 5.7 1.5 Mil. Max. Min. (2) Max. 4.5 1.5 5.2 Unit ns — 1.5 — 2.0 — 1.5 — 2.0 ns tF Output Fall Time — 1.5 — 1.5 — 1.5 — 1.5 ns tSK(o) Output skew: skew between outputs of all banks of same package (inputs tied together) — 0.7 — 0.9 — 0.5 — 0.7 ns tSK(p) Pulse skew: skew between opposite transitions of same output (|t PHL–t PLH|) — 0.7 — 0.9 — 0.6 — 0.8 ns tSK(t) Package skew: skew between outputs of different packages at same power supply voltage, temperature, package type and speed grade — 1.2 — 1.5 — 1.0 — 1.2 ns tPZL tPZH tPLZ tPHZ Output Enable Time OEA to OAn, OEB to OBn Output Disable Time OEA to OAn, OEB to OBn 1.5 6.0 1.5 6.5 1.5 5.0 1.5 6.0 ns 1.5 6.0 1.5 6.5 1.5 5.0 1.5 6.0 ns 2920 tbl 07 NOTES: 1. See test circuits and waveforms. 2. Minimum limits are guaranteed but not tested on Propagation Delays. 3. tPLH, tPHL, tSK(t) are production tested. All other parameters guaranteed but not production tested. 4. Propagation delay range indicated by Min. and Max. limit is due to VCC, operating temperature and process parameters. These propagation delay limits do not imply skew. 9.2 5 IDT49FCT805BT/CT, 806BT/CT FAST CMOS BUFFER/CLOCK DRIVER MILITARY AND COMMERCIAL TEMPERATURE RANGES TEST CIRCUITS AND WAVEFORMS TEST CIRCUIT FOR ALL OUTPUTS VCC 7.0V ENABLE AND DISABLE TIME SWITCH POSITION Test Disable LOW Enable LOW Disable HIGH Enable HIGH 500Ω V OUT VIN Pulse Generator D.U.T. 50pF RT 500Ω CL 2920 drw 07 Switch Closed Open 2920 lnk 08 DEFINITIONS: CL= Load capacitance: includes jig and probe capacitance. RT = Termination resistance: should be equal to ZOUT of the Pulse Generator. OUTPUT SKEW- tSK(o) PACKAGE DELAY 3V 1.5V INPUT INPUT 0V tPLH tPLH1 3V 1.5V 0V VOH 1.5V VOL tPHL1 tPHL VOH 2.0V 0.8V OUTPUT OUTPUT 1 tSK(o) 1.5V tSK(o) VOL OUTPUT 2 tF tR tPLH2 VOH 1.5V VOL tPHL2 tSK(o) = |tPLH2 - tPLH1| or |tPHL2 - tPHL1| 2920 drw 08 2920 drw 09 PULSE SKEW - tSK(p) PACKAGE SKEW - tSK(t) 3V 1.5V 0V INPUT tPHL tPLH OUTPUT VOH 1.5V VOL INPUT PACKAGE 1 OUTPUT tSK(t) PACKAGE 2 OUTPUT tSK(p) = |tPHL - tPLH| tPHL1 tPLH1 tPLH2 tSK(t) tPHL2 3V 1.5V 0V VOH 1.5V VOL VOH 1.5V VOL tSK(t) = |tPLH2 - tPLH1| or |tPHL2 - tPHL1| 2920 drw 10 Package 1 and Package 2 are same device type and speed grade ENABLE AND DISABLE TIMES ENABLE 2920 drw 11 DISABLE 3V 1.5V 0V CONTROL INPUT t OUTPUT NORMALLY LOW t PLZ PZL SWITCH CLOSED 0.3V V OL t t PZH OUTPUT NORMALLY HIGH SWITCH OPEN 3.5V 3.5V 1.5V PHZ 0.3V VOH 1.5V 0V 0V 2920 drw 12 NOTES: 1. Diagram shown for input Control Enable-LOW and input Control Disable-HIGH 2. Pulse Generator for All Pulses: f ≤ 1.0MHz; tF ≤ 2.5ns; tR ≤ 2.5ns 9.2 6 IDT49FCT805BT/CT, 806BT/CT FAST CMOS BUFFER/CLOCK DRIVER MILITARY AND COMMERCIAL TEMPERATURE RANGES ORDERING INFORMATION IDT49FCT XXX Device Type XX Package X Process/ Temperature Range Blank B Commercial (0°C to +70°C) MIL-STD-883, Class B (–55°C to +125°C) P D E L SO PY Q Plastic DIP CERDIP CERPACK Leadless Chip Carrier Small Outline IC Shrink Small Outline IC Quarter-size Small Outline Package 805BT 806BT 805CT 806CT Non-Inverting Buffer/Clock Driver Inverting Buffer/Clock Driver 2920 drw 13 9.2 7