140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 MRF581/MRF581A RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • Low Noise - 2.5 dB @ 500 MHZ • High Gain, Gain at Optimum Noise Figure = 15.5 dB @ 500 MHz • Ftau - 5.0 GHz @ 10v, 75mA • Cost Effective MacroX Package Macro X DESCRIPTION: Designed for high current, low power, low noise, amplifiers up to 1.0 GHz. ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol VCEO Parameter Collector-Emitter Voltage MRF581 18 MRF581A 15 Unit Vdc VCBO Collector-Base Voltage 30 Vdc VEBO Emitter-Base Voltage 2.5 Vdc IC Collector Current 200 mA Thermal Data P Total Device Dissipation @ TC = 50ºC Derate above 50ºC 2.5 25 Watts mW/ ºC P Total Device Dissipation @ TC = 25ºC Derate above 25ºC 1.25 10 Watts mW/ ºC -65 to +150 ºC 150 ºC D D Tstg TJmax Storage Junction Temperature Range Maximum Junction Temperature MSC1318.PDF 10-25-99 MRF581/MRF581A ELECTRICAL SPECIFICATIONS (Tcase = 25°C) STATIC (off) Symbol BVCEO BVCBO BVEBO ICBO IEBO Test Conditions Value Min. 18 15 Typ. Max. Unit - - Vdc Collector-Base Breakdown Voltage (IC = 1.0 mAdc, IE = 0) 30 - - Vdc Emitter-Base Breakdown Voltage (IE = 0.1 mAdc, IC = 0) 2.5 - - Vdc Collector Cutoff Current (VCE = 15 Vdc, VBE = 0 Vdc) - - 0.1 mA Collector Cutoff Current (VCE = 2.0 Vdc, VBE = 0 Vdc) - - 0.1 mA 50 90 - 200 250 - Collector-Emitter Breakdown Voltage (IC = 5.0 mAdc, IB = 0) MRF581 MRF581A (on) HFE DC Current Gain (IC = 50 mAdc, VCE = 5.0 Vdc) MRF581 MRF581A DYNAMIC Symbol COB Ftau Test Conditions Value Min. Typ. Max. Unit Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) - 2.0 3.0 pF Current-Gain Bandwidth Product (IC = 75 mAdc, VCE = 10 Vdc, f = 1.0 GHz) - 5.0 - GHz MSC1318.PDF 10-25-99 MRF581/MRF581A FUNCTIONAL Symbol Test Conditions Value Min. NFmin G Minimum Noise Figure (IC = 50 mAdc, VCE = 10 Vdc, f = 0.5 GHz) MRF581 MRF581A - Typ. 2.5 2.0 Max. 3.0 3.0 Unit dB NF Power Gain @ NFmin (IC = 50 mAdc, VCE = 10 Vdc, f = 0.5 GHz) 13 15.5 U max Maximum Unilateral Gain (1) IC = 50 mAdc, VCE = 10 Vdc, f = 500 MHz - 17.8 - dB Maximum Stable Gain IC = 50 mAdc, VCE = 10 Vdc, f = 500 MHz - 20 - dB Insertion Gain IC = 50 mAdc, VCE = 10 Vdc, f = 500 MHz 14 15 - dB G MSG 2 |S21| dB Table 1. Common Emitter S-Parameters, @ VCE = 10 V, IC = 50 mA f S11 S21 S12 S22 (MHz) |S11| ∠φ |S21| ∠φ |S12| ∠φ |S22| 100 .610 -137 23.8 116 .026 46 .522 -78 200 .659 -161 13.2 98 .033 47 .351 -106 300 .671 -171 9.0 89 .040 51 .304 -120 400 .675 -178 6.8 83 .047 55 .292 -128 500 .677 176 5.5 77 .055 58 .293 -132 600 .678 172 4.6 72 .064 61 .299 -134 700 .677 168 4.0 68 .073 62 .306 -135 800 .679 184 3.5 64 .082 63 .314 -136 900 .678 160 3.1 60 .092 64 .322 -138 1000 .682 156 2.8 56 .102 65 .311 -139 MSC1318.PDF 10-25-99 ∠φ MRF581/MRF581A C1, C4, C5, C6, C8, C9 — 1000 pF, Chip Capacitor C2, C3 — 1.0–10 pF, Johanson Capacitor C7, C10 — 10 µF, Tantalum Capacitor R1 — 1.0 kΩ Res. RFC — VK–200, Ferroxcube FB — Ferrite Bead, Ferroxcube, 56–590–65/3B TL1, TL7, TL8 — Microstrip 0.162, x 0.600, TL2 — Microstrip 0.162, x 1.000, TL3 — Microstrip 0.162, x 0.800, TL4 — Microstrip 0.162, x 0.440, TL5 — Microstrip 0.120, x 0.440, TL6 — Microstrip 0.120, x 1.160, TL9, TL10 — Microstrip 0.025, x 4.250, Board Material — 0.0625, Thick Glass Teflon ε r = 2.55 Figure 1. Minimum Noise Figure and Gain @ Minimum Noise Figure. MSC1318.PDF 10-25-99 MRF581/MRF581A Ccb(pF) BVCEO IC max (mA) Ftau (MHz) Gu Max (dB) NF (dB) NF IC (mA) NF VCE GN (dB) Type Freq (MHz) Device Package IC max (mA) BVCEO Efficiency (%) GPE VCC GPE (dB) Pout (watts) Freq (MHz) Type Device Package RF Low Power PA, LNA, and General Purpose Discrete Selector Guide SO-8 MRF4427, R2 NPN 175 0.15 18 60 12 20 400 TO-39 2N5109 NPN 200 3 10 15 12 1200 TO-39 2N4427 NPN 175 1 10 50 12 20 400 TO-39 MRF5943C NPN 200 3.4 30 15 11.4 1000 30 400 POWER MACRO MRF553 NPN 175 1.5 11.5 60 12.5 16 500 SO-8 MRF5943, R1, R2 NPN 200 3.4 30 15 15 1300 30 400 POWER MACRO MRF553T NPN 175 1.5 11.5 50 12.5 16 500 MRF607 NPN 175 1.75 11.5 50 12.5 16 3 7.8 50 12.5 6 TO-39 TO-39 2N6255 NPN 175 TO-72 2N5179 NPN 200 MA C R O X MRF559 20 NPN 5 1 2 0.5 10 65 7.5 400 2N5179 NPN 200 4.5 1.5 17 900 1 12 2N2857 NPN 300 5.5 50 6 13 1600 1 15 40 330 TO-39 MRF517 NPN 300 7.5 50 15 5.5 4600 3 25 150 18 1000 TO-72 MRF904 NPN 450 1.5 5 6 11 4000 1 15 30 12 50 TO-72 2N6304 NPN 450 5 2 5 14 1400 1 15 50 MACRO T BFR91 NPN 500 1.9 2 5 16.5 5000 1 12 35 MACRO T BFR96 NPN 500 2 10 10 14.5 500 2.6 15 100 SO-8 MRF5812, R1, R2 NPN 500 2 50 10 15.5 17.8 5000 15 200 MACRO X MRF581A NPN 500 2 50 10 14 15 5000 15 200 10 15 15 30 150 6 20 TO-72 16 TO-72 3.5 11 50 MA C R O X MRF559 NPN 5 1 2 0.5 13 60 12.5 16 150 TO-39 2N3866A NPN 4 0 0 1 10 45 28 30 400 BFR90 NPN 500 2.4 2 18 5000 M R F 3 8 6 6 , R 1 , R 2 NPN 4 0 0 1 10 45 28 30 400 TO-72 BFY90 NPN 500 2.5 2 5 20 1300 15 400 TO-72 MRF914 NPN 500 2.5 5 10 15 4500 12 40 MACRO X MRF581 NPN 500 2.5 50 10 15 17.8 5000 16 200 500 SO-8 P O W ER MA C R O P O W ER MA C R O MRF555 MRF555T NPN 4 7 0 NPN 4 7 0 1.5 1.5 11 11 50 12.5 50 12.5 16 16 400 MA C R O X MRF559 NPN 8 7 0 0.5 6.5 70 7.5 16 150 MA C R O X MRF559 NPN 8 7 0 0.5 9.5 65 12.5 16 150 SO-8 MRF8372,R1,R2 NPN 8 7 0 0.75 8 55 12.5 16 200 P O W ER MA C R O MRF557 NPN 8 7 0 1.5 8 55 12.5 16 400 P O W ER MA C R O MRF557T NPN 8 7 0 1.5 8 55 12.5 16 400 Macro TO-39 MRF586 NPN MACRO X MRF951 NPN 1000 MACRO X MRF571 MACRO T BFR91 MACRO T BFR90 NPN 1000 TO-39 MRF545 PNP 14 1400 TO-39 MRF544 NPN 13.5 1500 3 90 15 11 14.5 4500 2.2 17 200 5 6 14 17 8000 0.45 10 100 NPN 1000 1.5 10 6 10 8000 1 10 70 NPN 1000 2.5 2 5 8 11 5000 1 12 35 3 2 10 10 12.5 5000 1 15 30 2 70 400 70 400 Low Cost RF Plastic Package Options 1 8 1 2 MSC1318.PDF 10-25-99 2 1 3 3 Macro T 2 4 Macro X Power Macro 50 1.3 RF (LNA / General Purpose) Selection Guide RF (Low Power PA / General Purpose) Selection Guide 4 1 SO-8 5 MRF581/MRF581A PIN 1. COLLECTOR 2. EMITTER 3. BASE 4. EMITTER 1. 2. 4. 3. MSC1318.PDF 10-25-99