INCHANGE Semiconductor isc N-Channel MOSFET Transistor SPD07N20G,ISPD07N20G ·FEATURES ·Static drain-source on-resistance: RDS(on)≤0.4Ω ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Ideal for high-frequency switching and synchronous rectification ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 200 V VGS Gate-Source Voltage ±20 V ID Drain Current-Continuous 7 A IDM Drain Current-Single Pulsed 28 A PD Total Dissipation @TC=25℃ 40 W Tj Max. Operating Junction Temperature 175 ℃ -55~175 ℃ Tstg Storage Temperature ·THERMAL CHARACTERISTICS SYMBOL Rth(j-c) Rth(j-a) PARAMETER Channel-to-case thermal resistance Channel-to-ambient thermal resistance isc website：www.iscsemi.cn 1 MAX UNIT 3.1 ℃/W 100 ℃/W isc & iscsemi is registered trademark INCHANGE Semiconductor isc N-Channel MOSFET Transistor SPD07N20G,ISPD07N20G ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN BVDSS Drain-Source Breakdown Voltage VGS=0V; ID=0.25mA 200 VGS(th) Gate Threshold Voltage VDS=VGS; ID=1mA 2.1 RDS(on) Drain-Source On-Resistance IGSS TYP MAX UNIT V 4 V VGS=10V; ID=4.5A 0.4 Ω Gate-Source Leakage Current VGS= 20V;VDS=0V 0.1 μA IDSS Drain-Source Leakage Current VDS=200V; VGS= 0V 1 μA VSD Diode forward voltage IF=14A, VGS = 0V 1.7 V isc website：www.iscsemi.cn 2 isc & iscsemi is registered trademark