HSMC HI117 Pnp epitaxial planar transistor Datasheet

HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE9031
Issued Date : 1998.07.01
Revised Date : 2001.09.14
Page No. : 1/4
HI117
PNP EPITAXIAL PLANAR TRANSISTOR
Description
The HI117 is designed for use in general purpose amplifier and low-speed
switching applications.
Absolute Maximum Ratings (Ta=25°C)
• Maximum Temperatures
Storage Temperature .......................................................................................................... -55 ~ +150 °C
Junction Temperature .................................................................................................. +150 °C Maximum
• Maximum Power Dissipation
Total Power Dissipation (Tc=25°C) ................................................................................................... 25 W
• Maximum Voltages and Currents
BVCBO Collector to Base Voltage .................................................................................................. -100 V
BVCEO Collector to Emitter Voltage............................................................................................... -100 V
BVEBO Emitter to Base Voltage ......................................................................................................... -5 V
IC Collector Current (Continue) .......................................................................................................... -4 A
IC Collector Current (Peak) ................................................................................................................ -6 A
Characteristics (Ta=25°C)
Symbol
BVCBO
BVCEO
ICBO
ICEO
IEBO
*VCE(sat)
*VBE(on)
*hFE1
*hFE2
Cob
Min.
-100
-100
1
500
-
Typ.
-
Max.
-1
-2
-2
-2.5
-2.8
200
Unit
V
V
mA
mA
mA
V
V
K
pF
Test Conditions
IC=-1mA
IC=-30mA
VCB=-100V
VCE=-50V
VEB=-5V
IC=-2A, IB=-8mA
IC=-2A, VCE=-4V
IC=-1A, VCE=-4V
IC=-2A, VCE=-4V
VCB=-10V, f=0.1MHz
*Pulse Test : Pulse Width ≤380us, Duty Cycle≤2%
Darlington Schematic
C
B
R1
R2
E
HI117
HSMC Product Specification
HI-SINCERITY
Spec. No. : HE9031
Issued Date : 1998.07.01
Revised Date : 2001.09.14
Page No. : 2/4
MICROELECTRONICS CORP.
Characteristics Curve
Current Gain & Collector Current
Saturation Voltage & Collector Current
10000
100000
hFE @ VCE=3V
Saturation Voltage (mV)
1000
hFE
hFE @ VCE=4V
100
10
10000
VCE(sat) @ IC=100IB
1000
VCE(sat) @ IC=250IB
1
1
10
100
1000
100
100
10000
1000
Collector Current-IC (mA)
Saturation Voltage & Collector Current
On Voltage & Collector Current
10000
10000
VBE(sat) @ IC=250IB
On Voltage (mV)
Saturation Voltage (mV)
10000
Collector Current-IC (mA)
VBE(sat) @ IC=100IB
1000
VBE(on) @ VCE=3V
1000
VBE(on) @ VCE=4V
100
100
100
1000
1
10000
Collector Current-IC (mA)
10
100
1000
10000
Collector Current-IC (mA)
Capacitance & Reverse-Biased Voltage
Switching Time & Collector Current
1000
10
Capacitance (pF)
Switching Time (us)
VCC=30V, IC=250IB1=-250IB2
Tstg
1
Tf
100
Cob
Ton
10
0.1
1
10
Collector Current (A)
HI117
0.1
1
10
100
Reverse-Biased Voltage (V)
HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE9031
Issued Date : 1998.07.01
Revised Date : 2001.09.14
Page No. : 3/4
Safe Operating Area
10000
PT=1ms
Collector Current-IC (mA)
PT=100ms
1000
PT=1s
100
10
1
1
10
100
Forward Voltage-VCE (V)
HI117
HSMC Product Specification
HI-SINCERITY
Spec. No. : HE9031
Issued Date : 1998.07.01
Revised Date : 2001.09.14
Page No. : 4/4
MICROELECTRONICS CORP.
TO-251 Dimension
A
B
Marking:
C
H
1 2 7
D
Date Code
I
Ink Mark
Control Code
G
F
Style : Pin 1.Base 2.Collector 3.Emitter
3
I
K
E
H
2
1
J
3-Lead TO-251 Plastic Package
HSMC Package Code : I
*:Typical
Inches
Min.
Max.
0.0177
0.0217
0.0354
0.0591
0.0177
0.0236
0.0866
0.0945
0.2520
0.2677
0.2677
0.2835
DIM
A
B
C
D
E
F
Millimeters
Min.
Max.
0.45
0.55
0.90
1.50
0.45
0.60
2.20
2.40
6.40
6.80
6.80
7.20
DIM
G
H
I
J
K
Inches
Min.
Max.
0.2559
*0.1811
0.0354
0.0315
0.2047
0.2165
Millimeters
Min.
Max.
6.50
*4.60
0.90
0.80
5.20
5.50
Notes : 1.Dimension and tolerance based on our Spec. dated May. 24,1995.
2.Controlling dimension : millimeters.
3.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
4.If there is any question with packing specification or packing method, please contact your local HSMC sales office.
Material :
• Lead : 42 Alloy ; solder plating
• Mold Compound : Epoxy resin family, flammability solid burning class:UL94V-0
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC.
• HSMC reserves the right to make changes to its products without notice.
• HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory :
• Head Office (Hi-Sincerity Microelectronics Corp.) : 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C.
Tel : 886-2-25212056 Fax : 886-2-25632712, 25368454
• Factory 1 : No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C
Tel : 886-3-5983621~5 Fax : 886-3-5982931
HI117
HSMC Product Specification
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