Preliminary Datasheet HITK0203MP Silicon N Channel MOS FET Power Switching R07DS0481EJ0100 Rev.1.00 Jun 22, 2011 Features Low on-resistance RDS(on) = 68 m typ (VGS = 4.5 V, ID = 1.5 A) Low drive current High speed switching 2.5 V gate drive Outline RENESAS Package code: PLSP0003ZB-A (Package name: MPAK) 3 D G 3 1. Source 2. Gate 3. Drain 2 1 2 S 1 Note: Marking is “SG”. Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body - drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Symbol VDSS VGSS Ratings 20 12 Unit V V ID ID(pulse) Note1 IDR Pch Note2 Tch Tstg 2.9 10 2.9 0.8 150 –55 to +150 A A A W C C Notes: 1. PW 10 s, duty cycle 1% 2. When using the glass epoxy board (FR-4: 40 x 40 x 1 mm) R07DS0481EJ0100 Rev.1.00 Jun 22, 2011 Page 1 of 6 HITK0203MP Preliminary Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Drain to source leak current Gate to source cutoff voltage Symbol V(BR)DSS V(BR)GSS IGSS IDSS VGS(off) Min 20 12 — — 0.4 Typ — — — — — Max — — 10 1 1.4 Unit V V A A V Test conditions ID = 10 mA, VGS = 0 IG = 100 A, VDS = 0 VGS = 10 V, VDS = 0 VDS = 20 V, VGS = 0 VDS = 10 V, ID = 1 mA Drain to source on state resistance RDS(on) — 68 90 m ID = 1.5 A, VGS = 4.5 VNote3 RDS(on) — 105 150 m ID = 1.5 A, VGS = 2.5 VNote3 Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn - on delay time Rise time Turn - off delay time Fall time Total gate charge |yfs| Ciss Coss Crss td(on) tr td(off) tf Qg 3.0 — — — — — — — — 5.0 159 48 20 11 81 27 8 1.9 — — — — — — — — — S pF pF pF ns ns ns ns nC ID = 1.5 A, VDS = 10 VNote3 Gate to source charge Gate to drain charge Body - drain diode forward voltage Qgs Qgd VDF — — — 0.4 0.5 0.85 — — 1.1 nC nC V VDS = 10 V VGS = 0 f = 1 MHz ID = 1.5 A VGS = 4.5 V RL = 6.6 Rg = 4.7 VDD = 10 V VGS = 4.5 V ID = 2.9A IF = 2.9 A, VGS = 0 Note3 Notes: 3. Pulse test R07DS0481EJ0100 Rev.1.00 Jun 22, 2011 Page 2 of 6 HITK0203MP Preliminary Main Characteristics Maximum Channel Power Dissipation Curve Maximum Safe Operation Area 100 Channel Dissipation Pch (W) 1 Operation in this area is limited by RDS(on) Drain Current ID (A) 0.8 0.6 0.4 0.2 10 10 0 1 1 = D C s 10 PW μs m m s 10 0 O m s pe ra tio n 0.1 Ta = 25°C 1 Shot Pulse 0 0 50 100 0.01 0.01 150 Ambient Temperature Ta (°C) 0.1 1 10 100 Drain to Source Voltage VDS (V) *When using the glass epoxy board (FR-4: 40 × 40 × 1 mm) 10 V Typical Transfer Characteristics (1) Typical Output Characteristics 5V 8 Pulse Test Tc = 25°C 2.6 V 2.8 V 6 VDS = 10 V Pulse Test 2.4 V 2.2 V Drain Current ID (A) Drain Current ID (A) 8 3V 2.0 V 4 1.8 V 1.6 V 2 1.4 V 6 4 2 Tc = 75°C 25°C 0 VGS = 0 V 0 2 4 6 8 0 10 0 Drain to Source Voltage VDS (V) 1 2 –25°C 3 4 5 Gate to Source Voltage VGS (V) Gate to Source Cutoff Voltage vs. Typical Transfer Characteristics (2) Drain Current ID (A) VDS = 10 V Pulse Test 0.1 Tc = 75°C 0.01 25°C 0.001 –25°C 0.0001 0 0.5 1 1.5 2 2.5 Gate to Source Voltage VGS (V) R07DS0481EJ0100 Rev.1.00 Jun 22, 2011 3 Gate to Source Cutoff Voltage VGS(off) (V) 1 Case Temperature 1.5 VDS = 10 V Pulse Test 1 ID = 10 mA 0.5 1 mA 0.1 mA 0 –25 0 25 50 75 100 125 150 Case Temperature Tc (°C) Page 3 of 6 Preliminary 500 Pulse Test Tc = 25°C 400 300 200 2.9 A 1A 1.5 A 100 0.5 A 0 0 2 4 6 8 Static Drain to Source on State Resistance vs. Drain Current Drain to Source on State Resistance RDS(on) (mΩ) Drain to Source Saturation Voltage vs. Gate to Source Voltage 10 1000 Pulse Test Tc = 25°C VGS = 2.5 V 100 4.5 V 10 V 10 0.1 1 10 100 Drain Current ID (A) Static Drain to Source on State Resistance vs. Case Temperature Static Drain to Source on State Resistance vs. Case Temperature 180 120 Drain to Source on State Resistance RDS(on) (mΩ) Gate to Source Voltage VGS (V) 160 ID = 2.9 A 140 1.5 A 120 100 1A 80 Pulse Test VGS = 2.5 V 0.5 A 0 25 50 75 100 125 150 ID = 2.9 A 100 1.5 A 90 80 1A 70 0.5 A 60 50 40 –25 0 25 50 75 100 125 150 Case Temperature Tc (°C) Forward Transfer Admittance vs. Drain Current Zero Gate Voltage Drain current vs. Case Temperature 10 –25°C 25°C 1 0.1 0.01 Pulse Test VGS = 4.5 V 110 Case Temperature Tc (°C) Tc = 75°C Pulse Test VDS = 10 V 0.1 1 10 Drain Current ID (A) R07DS0481EJ0100 Rev.1.00 Jun 22, 2011 100 IDSS (nA) 60 –25 Zero Gate Voltage Drain current Forward Transfer Admittance |yfs| (S) Drain to Source on State Resistance RDS(on) (mΩ) Drain to Source Saturation Voltage VDS(on) (mV) HITK0203MP 10000 Pulse Test VGS = 0 V 1000 VDS = 20 V 100 10 1 0.1 –25 0 25 50 75 100 125 150 Case Temperature Tc (°C) Page 4 of 6 HITK0203MP Preliminary Switching Characteristics 16 VGS 30 12 5V 10 V VDD = 20 V VDD = 20 V 20 10 V 5V 8 10 4 ID = 2.9 A Tc = 25°C VDS 0 0 1 2 3 4 1000 Switching Time t (ns) 40 Gate to Source Voltage VGS (V) Drain to Source Voltage VDS (V) Dynamic Input Characteristics td(on) 10 tf 1 10 Drain Current ID (A) Typical Capacitance vs. Drain to Source Voltage Input Capacitance vs. Gate to Source Voltage 320 300 Ciss 100 280 Coss Crss Ciss (pF) Ciss, Coss, Crss (pF) td(off) Gate Charge Qg (nc) 1000 200 5 10 15 –10 –8 –6 –4 –2 20 0 2 4 6 8 10 Drain to Source Voltage VDS (V) Gate to Source Voltage VGS (V) Reverse Drain Current vs. Source to Drain Voltage Body-Drain Diode Forward Voltage vs. Case Temperature 10 Pulse Test Tc = 25°C 10 V 8 5V 6 4 2 0 0 VDS = 0 V f = 1 MHz 220 –5, –10 V VGS = 0 V 0.4 0.8 1.2 1.6 2.0 Source to Drain Voltage VSD (V) R07DS0481EJ0100 Rev.1.00 Jun 22, 2011 Body-Drain Diode Forward Voltage VSDF (V) 1 0 260 240 10 VGS = 0 V f = 1 MHz Reverse Drain Current IDR (A) tr 1 0.1 0 6 5 100 VDD = 10 V VGS = 4.5 V Rg = 4.7 Ω PW = 5 μs Tc = 25°C 0.6 VGS = 0 0.5 ID = 10 mA 0.4 0.3 1 mA 0.2 0.1 25 50 75 100 125 150 Case Temperature Tc (°C) Page 5 of 6 HITK0203MP Preliminary Package Dimensions JEITA Package Code SC-59A Package Name MPAK RENESAS Code PLSP0003ZB-A D Previous Code MPAK(T) / MPAK(T)V A Q e E c HE L A MASS[Typ.] 0.011g LP L1 A3 A x M S A b Reference Dimension in Millimeters Symbol Min Nom Max e A2 A e1 A1 S b I1 c b2 A-A Section Pattern of terminal position areas A A1 A2 A3 b c D E e HE L L1 LP x b2 e1 I1 Q 1.0 0 1.0 0.35 0.1 2.7 1.35 2.2 0.35 0.15 0.25 1.1 0.25 0.4 0.16 1.5 0.95 2.8 1.3 0.1 1.2 0.5 0.26 3.1 1.65 3.0 0.75 0.55 0.65 0.05 0.55 1.95 1.05 0.3 Ordering Information Orderable Part Number Quantity HITK0203MPTL-HQ 3000 pcs. Note: Shipping Container 178 mm reel, 8 mm Emboss taping This product is designed for consumer use and not for automotive. R07DS0481EJ0100 Rev.1.00 Jun 22, 2011 Page 6 of 6 Notice 1. All information included in this document is current as of the date this document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas Electronics products listed herein, please confirm the latest product information with a Renesas Electronics sales office. Also, please pay regular and careful attention to additional and different information to be disclosed by Renesas Electronics such as that disclosed through our website. 2. Renesas Electronics does not assume any liability for infringement of patents, copyrights, or other intellectual property rights of third parties by or arising from the use of Renesas Electronics products or technical information described in this document. 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