STMicroelectronics BYT12P-1000 Fast recovery rectifier diode Datasheet

BYT 12P-1000
®
FAST RECOVERY RECTIFIER DIODE
VERY HIGH REVERSE VOLTAGE CAPABILITY
VERY LOW REVERSE RECOVERY TIME
VERY LOW SWITCHING LOSSES
LOW NOISE TURN-OFF SWITCHING
Cathode connected to case
A
K
SUITABLE APPLICATIONS
FREE WHEELING DIODE IN CONVERTERS
AND MOTOR CONTROL CIRCUITS
RECTIFIER IN S.M.P.S.
TO220AC
(Plastic)
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
VRRM
Repetitive Peak Reverse Voltage
1000
V
VRSM
Non Repetitive Peak Reverse Voltage
1000
V
IFRM
Repetitive Peak Forward Current
150
A
25
A
IF (RMS)
tp ≤ 10µs
RMS Forward Current
IF (AV)
Average Forward Current
Tcase = 100°C
δ = 0.5
12
A
IFSM
Surge Non Repetitive Forward Current
tp = 10ms
Sinusoidal
75
A
Power Dissipation
Tcase = 100°C
25
W
- 40 to + 150
- 40 to + 150
°C
Value
Unit
2
°C/W
P
Tstg
Tj
Storage and Junction Temperature Range
THERMAL RESISTANCE
Symbol
Rth (j - c)
Test Conditions
Junction-case
October 1999 - Ed: 1B
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BYT 12P-1000
ELECTRICAL CHARACTERISTICS
STATIC CHARACTERISTICS
Synbol
IR
Test Conditions
Min.
Typ.
VR = VRRM
Tj = 25°C
Tj = 100°C
VF
IF = 12A
Tj = 25°C
Max.
Unit
50
µA
2.5
mA
1.9
V
1.8
Tj = 100°C
RECOVERY CHARACTERISTICS
Symbol
trr
Test Conditions
Tj = 25°C
Min.
Typ.
Max.
Unit
ns
IF = 1A
diF/dt = - 15A/µs
VR = 30V
155
IF = 0.5A
IR = 1A
Irr = 0.25A
65
TURN-OFF SWITCHING CHARACTERISTICS (Without Series Inductance)
Symbol
tIRM
Test Conditions
diF/dt = - 50A/µs
diF/dt = - 100A/µs
IRM
Min.
VCC = 200 V IF = 12A
Lp ≤ 0.05µH Tj = 100°C
See figure 11
Typ.
Max.
Unit
200
ns
7.8
A
Max.
Unit
120
diF/dt = -50A/µs
9
diF/dt = - 100A/µs
TURN-OFF OVERVOLTAGE COEFFICIENT (With Series Inductance)
Symbol
C=
VRP
VCC
Test Conditions
Tj = 100°C
diF/dt = - 12A/µs
VCC = 200V
Lp = 12µH
Min.
IF = IF (AV)
See figure 12
Typ.
4.5
To evaluate the conduction losses use the following equations:
VF = 1.47 + 0.026 IF
P = 1.47 x IF(AV) + 0.026 IF2(RMS)
Figure 1. Low frequency power losses versus
average current
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Figure 2. Peak current versus form factor
BYT 12P-1000
Figure 3. Non repetitive peak surge current
versus overload duration
Figure 4. Thermal impedance versus pulse
width
Figure 5. Voltage drop versus forward current
Figure 6. Recovery charge versus diF/dt
Figure 7. Recovery time versus diF/dt-
Figure 8. Peak reverse current versus diF/dt-
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BYT 12P-1000
Figure 9. Peak forward voltage versus diF/dtt
Figure 10. Dynamic parameters versus
junction temperature.
Figure 11. Turn-off switching characteristics (without series inductance).
Figure 12. Turn-off switching characteristics (with series inductance)
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BYT 12P-1000
PACKAGE MECHANICAL DATA :
TO220AC Plastic
REF.
A
H2
C
L5
L7
ØI
L6
L2
D
L9
F1
L4
M
F
E
G
A
C
D
E
F
F1
G
H2
L2
L4
L5
L6
L7
L9
M
Diam. I
DIMENSIONS
Millimeters
Inches
Min.
Max.
Min.
Max.
4.40
4.60
0.173
0.181
1.23
1.32
0.048
0.051
2.40
2.72
0.094
0.107
0.49
0.70
0.019
0.027
0.61
0.88
0.024
0.034
1.14
1.70
0.044
0.066
4.95
5.15
0.194
0.202
10.00
10.40
0.393
0.409
16.40 typ.
0.645 typ.
13.00
14.00
0.511
0.551
2.65
2.95
0.104
0.116
15.25
15.75
0.600
0.620
6.20
6.60
0.244
0.259
3.50
3.93
0.137
0.154
2.6 typ.
0.102 typ.
3.75
3.85
0.147
0.151
Marking: type number
Cooling method: by conduction (method C)
Weight : 1.86g
Recommended torque value : 80cm. N
Maximum torque value : 100cm. N
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use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
change without notice. This publication supersedes and replaces all information previously supplied.
STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval
of STMicroelectronics.
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© 1999 STMicroelectronics - Printed in Italy - All rights reserved.
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