BCR8PM-16L Triac Medium Power Use REJ03G0310-0100 Rev.1.00 Aug.20.2004 Features • • • • • Insulated Type • Planar Passivation Type • UL Recognized : Yellow Card No. E223904 File No. E80271 IT (RMS) : 8 A VDRM : 800 V IFGTI, IRGTI, IRGTⅢ : 30 mA Viso : 2000 V Outline TO-220F 2 3 1. T1 Terminal 2. T2 Terminal 3. Gate Terminal 1 1 2 3 Applications Washing machine, inversion operation of capacitor motor, and other general controlling devices Maximum Ratings Parameter Repetitive peak off-state voltageNote1 Non-repetitive peak off-state voltageNote1 Rev.1.00, Aug.20.2004, page 1 of 7 Symbol Voltage class 16 Unit VDRM VDSM 800 960 V V BCR8PM-16L Parameter RMS on-state current Symbol IT (RMS) Ratings 8 Unit A Surge on-state current ITSM 80 A I2 t 26 A2s PGM PG (AV) VGM IGM Tj Tstg — Viso 5 0.5 10 2 – 40 to +125 – 40 to +125 2.0 2000 W W V A °C °C g V Symbol Min. Typ. Max. Unit IDRM VTM — — — — 2.0 1.6 mA V Tj = 125°C, VDRM applied Tc = 25°C, ITM = 12 A, Instantaneous measurement I2t for fusing Peak gate power dissipation Average gate power dissipation Peak gate voltage Peak gate current Junction temperature Storage temperature Mass Isolation voltage Conditions Commercial frequency, sine full wave 360° conduction, Tc = 88°C 60Hz sinewave 1 full cycle, peak value, non-repetitive Value corresponding to 1 cycle of half wave 60Hz, surge on-state current Typical value Ta = 25°C, AC 1 minute, T1·T2·G terminal to case Notes: 1. Gate open. Electrical Characteristics Parameter Repetitive peak off-state current On-state voltage Test conditions Gate trigger voltageNote2 Ι ΙΙ ΙΙΙ VFGTΙ VRGTΙ VRGTΙΙΙ — — — — — — 1.5 1.5 1.5 V V V Tj = 25°C, VD = 6 V, RL = 6 Ω, RG = 330 Ω Gate trigger currentNote2 Ι ΙΙ ΙΙΙ IFGTΙ IRGTΙ IRGTΙΙΙ — — — — — — 30 30 30 mA mA mA Tj = 25°C, VD = 6 V, RL = 6 Ω, RG = 330 Ω VGD Rth (j-c) (dv/dt)c 0.2 — 10 — — — — 3.7 — V °C/W V/µs Gate non-trigger voltage Thermal resistance Tj = 125°C, VD = 1/2 VDRM Junction to caseNote3 Tj = 125°C Critical-rate of rise of off-state Note4 commutating voltage Notes: 2. Measurement using the gate trigger characteristics measurement circuit. 3. The contact thermal resistance Rth (c-f) in case of greasing is 0.5°C/W. 4. Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below. Test conditions 1. Junction temperature Tj = 125°C 2. Rate of decay of on-state commutating current (di/dt)c = – 4.0 A/ms 3. Peak off-state voltage VD = 400 V Rev.1.00, Aug.20.2004, page 2 of 7 Commutating voltage and current waveforms (inductive load) Supply Voltage Time Main Current (di/dt)c Time Main Voltage (dv/dt)c Time VD BCR8PM-16L Performance Curves 102 7 5 3 2 Rated Surge On-State Current 100 Tj = 125°C 101 7 5 3 2 Tj = 25°C 100 7 5 3 2 Surge On-State Current (A) On-State Current (A) Maximum On-State Characteristics 60 50 40 30 20 10 2 3 4 5 7 101 2 3 4 5 7 102 Gate Characteristics (I, II and III) Gate Trigger Current vs. Junction Temperature VGM = 10V PG(AV) = 0.5W PGM = 5W IGM = 2A VGT = 1.5V 100 7 5 3 2 Gate Trigger Current (Tj = t°C) × 100 (%) Gate Trigger Current (Tj = 25°C) Conduction Time (Cycles at 60Hz) IFGT I IRGT I, IRGT III VGD = 0.2V 10–1 7 5 101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 Gate Trigger Voltage (Tj = t°C) × 100 (%) Gate Trigger Voltage (Tj = 25°C) 70 On-State Voltage (V) 103 7 5 4 3 Typical Example IRGT I, IRGT III 2 102 7 5 4 3 IFGT I 2 101 –60 –40 –20 0 20 40 60 80 100 120 140 Gate Current (mA) Junction Temperature (°C) Gate Trigger Voltage vs. Junction Temperature Maximum Transient Thermal Impedance Characteristics (Junction to case) 103 7 5 4 3 2 Typical Example 102 7 5 4 3 2 101 –60 –40 –20 0 20 40 60 80 100 120 140 Junction Temperature (°C) Rev.1.00, Aug.20.2004, page 3 of 7 Transient Thermal Impedance (°C/W) Gate Voltage (V) 101 7 5 3 2 80 0 100 10–1 0.6 1.0 1.4 1.8 2.2 2.6 3.0 3.4 3.8 3 2 90 102 2 3 5 7 103 2 3 5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 Conduction Time (Cycles at 60Hz) BCR8PM-16L Maximum On-State Power Dissipation 103 16 7 5 3 2 No Fins 102 7 5 3 2 101 7 5 3 2 100 7 5 3 2 On-State Power Dissipation (W) Transient Thermal Impedance (°C/W) Maximum Transient Thermal Impedance Characteristics (Junction to ambient) 10–1 101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 2 3 5 7 105 6 4 2 0 2 4 6 8 10 12 14 16 RMS On-State Current (A) Allowable Case Temperature vs. RMS On-State Current Allowable Ambient Temperature vs. RMS On-State Current 160 Ambient Temperature (°C) 120 100 80 60 40 360° Conduction 20 Resistive, inductive loads 0 0 2 4 6 8 10 12 14 All fins are black painted 140 aluminum and greased 120 120 × 120 × t2.3 100 × 100 × t2.3 100 60 × 60 × t2.3 80 60 40 20 0 16 0 2 4 6 Curves apply regardless of conduction angle Resistive, inductive loads Natural convection 8 10 12 14 16 RMS On-State Current (A) RMS On-State Current (A) Allowable Ambient Temperature vs. RMS On-State Current Repetitive Peak Off-State Current vs. Junction Temperature 160 Natural convection No Fins Curves apply regardless of conduction angle Resistive, inductive loads 140 120 100 80 60 40 20 0 0.5 1.0 1.5 2.0 2.5 RMS On-State Current (A) Rev.1.00, Aug.20.2004, page 4 of 7 3.0 Repetitive Peak Off-State Current (Tj = t°C) × 100 (%) Repetitive Peak Off-State Current (Tj = 25°C) Case Temperature (°C) 8 Conduction Time (Cycles at 60Hz) Curves apply regardless 140 of conduction angle Ambient Temperature (°C) 12 360° Conduction Resistive, 10 inductive loads 0 160 0 14 105 7 Typical Example 5 3 2 104 7 5 3 2 103 7 5 3 2 102 –60 –40 –20 0 20 40 60 80 100 120 140 Junction Temperature (°C) BCR8PM-16L 103 7 5 4 3 Latching Current vs. Junction Temperature 103 Latching Current (mA) Typical Example 2 102 7 5 4 3 2 101 –60 –40 –20 0 20 40 60 80 100 120 140 T2+, G– 7 5 4 3 2 101 7 5 4 3 2 T2+, G+ 20 40 60 80 100 120 140 160 Breakover Voltage vs. Rate of Rise of Off-State Voltage 120 100 80 60 40 20 0 –60 –40 –20 0 20 40 60 80 100 120 140 Breakover Voltage (dv/dt = xV/µs) × 100 (%) Breakover Voltage (dv/dt = 1V/µs) Breakover Voltage vs. Junction Temperature 140 160 Typical Example Tj = 125°C 140 120 100 I Quadrant III Quadrant 80 60 40 20 0 101 2 3 45 7 102 2 3 45 7 103 2 3 45 7 104 Junction Temperature (°C) Rate of Rise of Off-State Voltage (V/µs) Commutation Characteristics Gate Trigger Current vs. Gate Current Pulse Width Typical Example Tj = 125°C IT = 4A τ = 500µs VD = 200V 2 f = 3Hz Time Main Voltage (dv/dt)c VD Main Current (di/dt)c IT τ Time III Quadrant Minimum Characteristics Value 2 I Quadrant 100 100 T2–, G– 102 Junction Temperature (°C) Typical Example 101 7 5 4 3 Distribution Junction Temperature (°C) 160 102 7 5 4 3 Typical Example 7 5 4 3 2 100 –40 –20 0 2 3 4 5 7 101 2 3 4 5 7 102 Rate of Decay of On-State Commutating Current (A/ms) Rev.1.00, Aug.20.2004, page 5 of 7 Gate Trigger Current (tw) × 100 (%) Gate Trigger Current (DC) Critical Rate of Rise of Off-State Commutating Voltage (V/µs) Breakover Voltage (Tj = t°C) × 100 (%) Breakover Voltage (Tj = 25°C) Holding Current (Tj = t°C) × 100 (%) Holding Current (Tj = 25°C) Holding Current vs. Junction Temperature 103 7 5 4 3 2 102 7 5 4 3 2 101 0 10 Typical Example IRGT I IRGT III IFGT I 2 3 4 5 7 101 2 3 4 5 7 102 Gate Current Pulse Width (µs) BCR8PM-16L Gate Trigger Characteristics Test Circuits 6Ω 6Ω A 6V 330Ω V Test Procedure I A V V 330Ω Test Procedure II 6Ω 6V A 6V 330Ω Test Procedure III Rev.1.00, Aug.20.2004, page 6 of 7 BCR8PM-16L Package Dimensions TO-220F EIAJ Package Code JEDEC Code Conforms Mass (g) (reference value) Lead Material 2.0 Cu alloy 10.5 max 2.8 17 8.5 5.0 1.2 5.2 3.6 φ 3.2 ± 0.2 13.5 min 1.3 max 0.8 0.5 2.54 2.6 Symbol 4.5 2.54 Dimension in Millimeters Min Typ Max A A1 A2 b D E e x y y1 ZD ZE Note 1) The dimensional figures indicate representative values unless otherwise the tolerance is specified. Order Code Lead form Standard packing Quantity Standard order code Straight type Vinyl sack 100 Type name +A Lead form Plastic Magazine (Tube) 50 Type name +A – Lead forming code Note : Please confirm the specification about the shipping in detail. Rev.1.00, Aug.20.2004, page 7 of 7 Standard order code example BCR8PM-16LA BCR8PM-16LA-A8 Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. 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