SUTEX DN3545N8 N-channel depletion-mode vertical dmos fet Datasheet

DN3545
N-Channel Depletion-Mode
Vertical DMOS FETs
Ordering Information
Order Number / Package
Product marking for TO-243AA:
BVDSX /
BVDGX
RDS(ON)
(max)
IDSS
(min)
TO-92
TO-243AA*
Die
450V
20Ω
200mA
DN3545N3
DN3545N8
DN3545ND
* Same as SOT-89.
DN5M❋
Product shipped on 2000 piece carrier tape reels.
Where ❋ = 2-week alpha date code
Features
Advanced DMOS Technology
❏ High input impedance
These depletion-mode (normally-on) transistors utilize an advanced vertical DMOS structure and Supertex’s well-proven
silicon-gate manufacturing process. This combination produces
devices with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature
coefficient inherent in MOS devices. Characteristic of all MOS
structures, these devices are free from thermal runaway and
thermally-induced secondary breakdown.
❏ Low input capacitance
❏ Fast switching speeds
❏ Low on resistance
❏ Free from secondary breakdown
❏ Low input and output leakage
Supertex’s vertical DMOS FETs are ideally suited to a wide range
of switching and amplifying applications where high breakdown
voltage, high input impedance, low input capacitance, and fast
switching speeds are desired.
Applications
❏ Normally-on switches
❏ Solid state relays
❏ Converters
Package Options
❏ Constant current sources
❏ Power supply circuits
❏ Telecom
D
G
Absolute Maximum Ratings
D
S
Drain-to-Source Voltage
BVDSX
Drain-to-Gate Voltage
BVDGX
Gate-to-Source Voltage
± 20V
Operating and Storage Temperature
Soldering Temperature*
* Distance of 1.6 mm from case for 10 seconds.
TO-243AA
(SOT-89)
SGD
TO-92
-55°C to +150°C
300°C
Note: See Package Outline section for dimensions.
12/13/01
Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability
indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to
workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to the
1 refer to the most current databook or to the Legal/Disclaimer page on the Supertex website.
Supertex website: http://www.supertex.com. For complete liability information on all Supertex products,
DN3545
Thermal Characteristics
Package
ID (continuous)*
TO-92
ID (pulsed)
136mA
TO-243AA
Power Dissipation
@ TA = 25°C
1.6A
200mA
0.74W
1.6†
300mA
IDR*
IDRM
θjc
°C/W
θja
°C/W
125
170
136mA
1.6A
15
78†
200mA
300mA
* ID (continuous) is limited by max rated Tj.
†
Mounted on FR4 board, 25mm x 25mm x 1.57mm. Significant PD increase possible on ceramic substrate.
Electrical Characteristics (@ 25°C unless otherwise specified)
Symbol
Parameter
Min
BVDSX
Drain-to-Source
Breakdown Voltage
450
VGS(OFF)
Gate-to-Source OFF Voltage
–1.5
∆VGS(OFF)
Typ
Max
Unit
Conditions
V
VGS = -5V, ID = 100µA
–3.5
V
VDS = 25V, ID= 10µA
Change in VGS(OFF) with Temperature
4.5
mV/°C
VDS = 25V, ID= 10µA
IGSS
Gate Body Leakage Current
100
nA
VGS = ± 20V, VDS = 0V
ID(OFF)
Drain-to-Source Leakage Current
1.0
µA
VGS = -5V, VDS = Max Rating
1.0
mA
VGS = -5V, VDS = 0.8 Max Rating
TA = 125°C
mA
VGS = 0V, VDS = 15V
IDSS
Saturated Drain-to-Source Current
RDS(ON)
Static Drain-to-Source
ON-State Resistance
20
Ω
VGS = 0V, ID = 150mA
∆RDS(ON)
Change in RDS(ON) with Temperature
1.1
%/°C
VGS = 0V, ID = 150mA
GFS
Forward Transconductance
CISS
Input Capacitance
360
COSS
Common Source Output Capacitance
40
CRSS
Reverse Transfer Capacitance
15
td(ON)
Turn-ON Delay Time
20
tr
Rise Time
30
td(OFF)
Turn-OFF Delay Time
30
RGEN = 25Ω,
tf
Fall Time
40
VGS = 0V to -10V
VSD
Diode Forward Voltage Drop
1.8
trr
Reverse Recovery Time
200
Ω
150
m
800
ID = 100mA, VDS = 10V
VGS = -5V, VDS = 25V
pF
f = 1 MHz
VDD = 25V,
ns
ID = 150mA,
V
VGS = -5V, ISD = 150mA
ns
VGS = -5V, ISD = 150mA
Notes:
1. All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
2. All A.C. parameters sample tested.
VDD
Switching Waveforms and Test Circuit
RL
0V
90%
PULSE
GENERATOR
INPUT
-10V
10%
t(ON)
td(ON)
Rgen
t(OFF)
tr
td(OFF)
OUTPUT
tF
D.U.T.
VDD
10%
INPUT
10%
OUTPUT
0V
90%
90%
2
Typical Application Curves
Output Characteristics
Saturation Characteristics
0.7
0.6
VGS = +2.0V
VGS = +2V
+1.0V
0V
1.0V
0.6
0.5
0V
ID (Amperes)
ID (Amperes)
-0.5V
0.5
-0.5V
0.4
-0.8V
0.3
0.4
-0.8V
0.3
-1.0V
0.2
-1.0V
0.2
0.1
0.1
-1.5V
-1.5V
0
0
0
50
100
150
200
250
300
350
400
450
0
4
6
8
10
VDS (Volts)
Transconductance vs. Drain Current
Power Dissipation vs. Ambient Temperature
2.0
0.8
V
DS
= 10V
T
= -55¡C
A
TO-243AA
1.5
0.6
T
= 25¡C
A
PD (watts)
GFS (siemens)
2
VDS (Volts)
0.4
1.0
TO-92
T
= 125¡C
A
0.5
0.2
0
0
0
0.1
0.2
0.3
0
0.4
25
50
ID (Amperes)
100
125
150
TA (¡C)
Maximum Rated Safe Operating Area
Thermal Response Characteristics
1.0
1.0
Thermal Resistance (normalized)
TO-243AA (Pulsed)
TO-92 (Pulsed)
TO-243AA (DC)
ID (Amperes)
75
0.1
TO-92 (DC)
0.01
TO-243AA
T
= 2 5 ¡C
A
0.8
P
= 1.6W
D
0.6
0.4
0.2
TO-92
T
= 2 5 ¡C
C
T
0.001
A
P
= 1.0W
D
=25¡C
0
1
10
100
1000
0.001
VDS (Volts)
0.01
0.1
tp (seconds)
3
1
10
Typical Application Curves
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12/13/010
©2001 Supertex Inc. All rights reserved. Unauthorized use or reproduction prohibited.
4
1235 Bordeaux Drive, Sunnyvale, CA 94089
TEL: (408) 744-0100 • FAX: (408) 222-4895
www.supertex.com
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