DN3545 N-Channel Depletion-Mode Vertical DMOS FETs Ordering Information Order Number / Package Product marking for TO-243AA: BVDSX / BVDGX RDS(ON) (max) IDSS (min) TO-92 TO-243AA* Die 450V 20Ω 200mA DN3545N3 DN3545N8 DN3545ND * Same as SOT-89. DN5M❋ Product shipped on 2000 piece carrier tape reels. Where ❋ = 2-week alpha date code Features Advanced DMOS Technology ❏ High input impedance These depletion-mode (normally-on) transistors utilize an advanced vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally-induced secondary breakdown. ❏ Low input capacitance ❏ Fast switching speeds ❏ Low on resistance ❏ Free from secondary breakdown ❏ Low input and output leakage Supertex’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. Applications ❏ Normally-on switches ❏ Solid state relays ❏ Converters Package Options ❏ Constant current sources ❏ Power supply circuits ❏ Telecom D G Absolute Maximum Ratings D S Drain-to-Source Voltage BVDSX Drain-to-Gate Voltage BVDGX Gate-to-Source Voltage ± 20V Operating and Storage Temperature Soldering Temperature* * Distance of 1.6 mm from case for 10 seconds. TO-243AA (SOT-89) SGD TO-92 -55°C to +150°C 300°C Note: See Package Outline section for dimensions. 12/13/01 Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to the 1 refer to the most current databook or to the Legal/Disclaimer page on the Supertex website. Supertex website: http://www.supertex.com. For complete liability information on all Supertex products, DN3545 Thermal Characteristics Package ID (continuous)* TO-92 ID (pulsed) 136mA TO-243AA Power Dissipation @ TA = 25°C 1.6A 200mA 0.74W 1.6† 300mA IDR* IDRM θjc °C/W θja °C/W 125 170 136mA 1.6A 15 78† 200mA 300mA * ID (continuous) is limited by max rated Tj. † Mounted on FR4 board, 25mm x 25mm x 1.57mm. Significant PD increase possible on ceramic substrate. Electrical Characteristics (@ 25°C unless otherwise specified) Symbol Parameter Min BVDSX Drain-to-Source Breakdown Voltage 450 VGS(OFF) Gate-to-Source OFF Voltage –1.5 ∆VGS(OFF) Typ Max Unit Conditions V VGS = -5V, ID = 100µA –3.5 V VDS = 25V, ID= 10µA Change in VGS(OFF) with Temperature 4.5 mV/°C VDS = 25V, ID= 10µA IGSS Gate Body Leakage Current 100 nA VGS = ± 20V, VDS = 0V ID(OFF) Drain-to-Source Leakage Current 1.0 µA VGS = -5V, VDS = Max Rating 1.0 mA VGS = -5V, VDS = 0.8 Max Rating TA = 125°C mA VGS = 0V, VDS = 15V IDSS Saturated Drain-to-Source Current RDS(ON) Static Drain-to-Source ON-State Resistance 20 Ω VGS = 0V, ID = 150mA ∆RDS(ON) Change in RDS(ON) with Temperature 1.1 %/°C VGS = 0V, ID = 150mA GFS Forward Transconductance CISS Input Capacitance 360 COSS Common Source Output Capacitance 40 CRSS Reverse Transfer Capacitance 15 td(ON) Turn-ON Delay Time 20 tr Rise Time 30 td(OFF) Turn-OFF Delay Time 30 RGEN = 25Ω, tf Fall Time 40 VGS = 0V to -10V VSD Diode Forward Voltage Drop 1.8 trr Reverse Recovery Time 200 Ω 150 m 800 ID = 100mA, VDS = 10V VGS = -5V, VDS = 25V pF f = 1 MHz VDD = 25V, ns ID = 150mA, V VGS = -5V, ISD = 150mA ns VGS = -5V, ISD = 150mA Notes: 1. All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.) 2. All A.C. parameters sample tested. VDD Switching Waveforms and Test Circuit RL 0V 90% PULSE GENERATOR INPUT -10V 10% t(ON) td(ON) Rgen t(OFF) tr td(OFF) OUTPUT tF D.U.T. VDD 10% INPUT 10% OUTPUT 0V 90% 90% 2 Typical Application Curves Output Characteristics Saturation Characteristics 0.7 0.6 VGS = +2.0V VGS = +2V +1.0V 0V 1.0V 0.6 0.5 0V ID (Amperes) ID (Amperes) -0.5V 0.5 -0.5V 0.4 -0.8V 0.3 0.4 -0.8V 0.3 -1.0V 0.2 -1.0V 0.2 0.1 0.1 -1.5V -1.5V 0 0 0 50 100 150 200 250 300 350 400 450 0 4 6 8 10 VDS (Volts) Transconductance vs. Drain Current Power Dissipation vs. Ambient Temperature 2.0 0.8 V DS = 10V T = -55¡C A TO-243AA 1.5 0.6 T = 25¡C A PD (watts) GFS (siemens) 2 VDS (Volts) 0.4 1.0 TO-92 T = 125¡C A 0.5 0.2 0 0 0 0.1 0.2 0.3 0 0.4 25 50 ID (Amperes) 100 125 150 TA (¡C) Maximum Rated Safe Operating Area Thermal Response Characteristics 1.0 1.0 Thermal Resistance (normalized) TO-243AA (Pulsed) TO-92 (Pulsed) TO-243AA (DC) ID (Amperes) 75 0.1 TO-92 (DC) 0.01 TO-243AA T = 2 5 ¡C A 0.8 P = 1.6W D 0.6 0.4 0.2 TO-92 T = 2 5 ¡C C T 0.001 A P = 1.0W D =25¡C 0 1 10 100 1000 0.001 VDS (Volts) 0.01 0.1 tp (seconds) 3 1 10 Typical Application Curves () ** *) ), ) () *)) !$ % . *) . ) "# )2 ! . -(% )1 ! . *-(% ) )- '0 '- '* ) * " "7 0)) *- " *() *)) )+ 4 )5 *() '() ) () )1 *)) !$ % *() 8 . *() * -)) . 0) ) '* ''0 () ) *2 ), - -() -1 4 *)/ 0 . '( )+ -) ** )( - )2 *0 )3 )- )1 ! *( ! . '((% )+ -) ) *() ! & *) & 0) *) )+ '() ) 1) "# . *))/ . '( 6 "# 6 ! *- ) *) -) 0) '1 '( 1) " ) * - 0 1 9 " : ( 2 12/13/010 ©2001 Supertex Inc. All rights reserved. Unauthorized use or reproduction prohibited. 4 1235 Bordeaux Drive, Sunnyvale, CA 94089 TEL: (408) 744-0100 • FAX: (408) 222-4895 www.supertex.com