MUN5311DW1T1G Series Preferred Devices Dual Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base−emitter resistor. These digital transistors are designed to replace a single device and its external resistor bias network. The BRT eliminates these individual components by integrating them into a single device. In the MUN5311DW1T1G series, two complementary BRT devices are housed in the SOT−363 package which is ideal for low power surface mount applications where board space is at a premium. Features • • • • • http://onsemi.com (3) (2) R1 Q2 R2 R1 (4) (5) Symbol Value Unit Collector-Base Voltage VCBO 50 Vdc Collector-Emitter Voltage VCEO 50 Vdc IC 100 mAdc Collector Current THERMAL CHARACTERISTICS Characteristic (One Junction Heated) 1 SOT−363 CASE 419B STYLE 1 Characteristic (Both Junctions Heated) Symbol Max Unit PD 187 (Note 1) 256 (Note 2) 1.5 (Note 1) 2.0 (Note 2) mW 6 xx M G G mW/°C xx = Device Code M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation and/or position may vary depending upon manufacturing location. 670 (Note 1) 490 (Note 2) °C/W Symbol Max Unit PD 250 (Note 1) 385 (Note 2) 2.0 (Note 1) 3.0 (Note 2) mW ORDERING AND DEVICE MARKING INFORMATION mW/°C See detailed ordering, shipping, and specific marking information in the table on page 2 of this data sheet. RqJA Total Device Dissipation TA = 25°C Derate above 25°C Thermal Resistance − Junction-to-Ambient RqJA 493 (Note 1) 325 (Note 2) °C/W Thermal Resistance − Junction-to-Lead RqJL 188 (Note 1) 208 (Note 2) °C/W TJ, Tstg −55 to +150 °C Junction and Storage Temperature MARKING DIAGRAM 1 Total Device Dissipation TA = 25°C Derate above 25°C Thermal Resistance − Junction-to-Ambient (6) 6 MAXIMUM RATINGS (TA = 25°C unless otherwise noted, common for Q1 Rating R2 Q1 Simplifies Circuit Design Reduces Board Space Reduces Component Count Available in 8 mm, 7 inch/3000 Unit Tape and Reel These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant and Q2, − minus sign for Q1 (PNP) omitted) (1) Preferred devices are recommended choices for future use and best overall value. Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. FR−4 @ Minimum Pad 2. FR−4 @ 1.0 x 1.0 inch Pad © Semiconductor Components Industries, LLC, 2009 October, 2009 − Rev. 12 1 Publication Order Number: MUN5311DW1T1/D MUN5311DW1T1G Series ORDERING, SHIPPING, DEVICE MARKING AND RESISTOR VALUES Device Package Marking R1 (K) R2 (K) MUN5311DW1T1G SOT−363 (Pb−Free) 11 10 10 MUN5312DW1T1G SOT−363 (Pb−Free) 12 22 22 MUN5313DW1T1G SOT−363 (Pb−Free) 13 47 47 MUN5314DW1T1G SOT−363 (Pb−Free) 14 10 47 MUN5315DW1T1G SOT−363 (Pb−Free) 15 10 ∞ MUN5316DW1T1G SOT−363 (Pb−Free) 16 4.7 ∞ MUN5330DW1T1G SOT−363 (Pb−Free) 30 1.0 1.0 MUN5331DW1T1G SOT−363 (Pb−Free) 31 2.2 2.2 MUN5332DW1T1G SOT−363 (Pb−Free) 32 4.7 4.7 MUN5333DW1T1G SOT−363 (Pb−Free) 33 4.7 47 MUN5334DW1T1G SOT−363 (Pb−Free) 34 22 47 MUN5335DW1T1G SOT−363 (Pb−Free) 35 2.2 47 Shipping† 3000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 2 MUN5311DW1T1G Series ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted, common for Q1 and Q2, − minus sign for Q1 (PNP) omitted) Characteristic Symbol Min Typ Max Unit Collector-Base Cutoff Current (VCB = 50 V, IE = 0) ICBO − − 100 nAdc Collector-Emitter Cutoff Current (VCE = 50 V, IB = 0) ICEO − − 500 nAdc Emitter-Base Cutoff Current (VEB = 6.0 V, IC = 0) IEBO − − − − − − − − − − − − − − − − − − − − − − − − 0.5 0.2 0.1 0.2 0.9 1.9 4.3 2.3 1.5 0.18 0.13 0.2 mAdc Collector-Base Breakdown Voltage (IC = 10 mA, IE = 0) V(BR)CBO 50 − − Vdc Collector-Emitter Breakdown Voltage (Note 3) (IC = 2.0 mA, IB = 0) V(BR)CEO 50 − − Vdc OFF CHARACTERISTICS MUN5311DW1T1G MUN5312DW1T1G MUN5313DW1T1G MUN5314DW1T1G MUN5315DW1T1G MUN5316DW1T1G MUN5330DW1T1G MUN5331DW1T1G MUN5332DW1T1G MUN5333DW1T1G MUN5334DW1T1G MUN5335DW1T1G 3. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0% http://onsemi.com 3 MUN5311DW1T1G Series ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted, common for Q1 and Q2, − minus sign for Q1 (PNP) omitted) (Continued) Characteristic Symbol Min Typ Max hFE 35 60 80 80 160 160 3.0 8.0 15 80 80 80 60 100 140 140 350 350 5.0 15 30 200 150 140 − − − − − − − − − − − − − − − − − − − − − − − − − − − − − − − − − − − − 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 − − − − − − − − − − − − − − − − − − − − − − − − 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 4.9 4.9 4.9 4.9 4.9 4.9 4.9 4.9 4.9 4.9 4.9 4.9 − − − − − − − − − − − − − − − − − − − − − − − − Unit ON CHARACTERISTICS (Note 4) DC Current Gain (VCE = 10 V, IC = 5.0 mA) Collector-Emitter Saturation Voltage (IC = 10 mA, IB = 0.3 mA) (IC = 10 mA, IB = 5 mA) (IC = 10 mA, IB = 1 mA) Output Voltage (on) (VCC = 5.0 V, VB = 2.5 V, RL = 1.0 kW) (VCC = 5.0 V, VB = 3.5 V, RL = 1.0 kW) Output Voltage (off) (VCC = 5.0 V, VB = 0.5 V, RL = 1.0 kW) (VCC = 5.0 V, VB = 0.050 V, RL = 1.0 kW) (VCC = 5.0 V, VB = 0.25 V, RL = 1.0 kW) MUN5311DW1T1G MUN5312DW1T1G MUN5313DW1T1G MUN5314DW1T1G MUN5315DW1T1G MUN5316DW1T1G MUN5330DW1T1G MUN5331DW1T1G MUN5332DW1T1G MUN5333DW1T1G MUN5334DW1T1G MUN5335DW1T1G VCE(sat) MUN5311DW1T1G MUN5312DW1T1G MUN5313DW1T1G MUN5314DW1T1G MUN5335DW1T1G MUN5330DW1T1G MUN5331DW1T1G MUN5315DW1T1G MUN5316DW1T1G MUN5332DW1T1G MUN5333DW1T1G MUN5334DW1T1G VOL MUN5311DW1T1G MUN5312DW1T1G MUN5314DW1T1G MUN5315DW1T1G MUN5316DW1T1G MUN5330DW1T1G MUN5331DW1T1G MUN5332DW1T1G MUN5333DW1T1G MUN5334DW1T1G MUN5335DW1T1G MUN5313DW1T1G VOH MUN5311DW1T1G MUN5312DW1T1G MUN5313DW1T1G MUN5314DW1T1G MUN5333DW1T1G MUN5334DW1T1G MUN5335DW1T1G MUN5330DW1T1G MUN5315DW1T1G MUN5316DW1T1G MUN5331DW1T1G MUN5332DW1T1G http://onsemi.com 4 Vdc Vdc Vdc MUN5311DW1T1G Series ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted, common for Q1 and Q2, − minus sign for Q1 (PNP) omitted) (Continued) Characteristic Symbol Min Typ Max Unit R1 7.0 15.4 32.9 7.0 7.0 3.3 0.7 1.5 3.3 3.3 15.4 1.54 10 22 47 10 10 4.7 1.0 2.2 4.7 4.7 22 2.2 13 28.6 61.1 13 13 6.1 1.3 2.9 6.1 6.1 28.6 2.86 kW R1/R2 0.8 0.17 − 0.8 0.055 0.38 0.038 1.0 0.21 − 1.0 0.1 0.47 0.047 1.2 0.25 − 1.2 0.185 0.56 0.056 ON CHARACTERISTICS (Note 4) Input Resistor MUN5311DW1T1G MUN5312DW1T1G MUN5313DW1T1G MUN5314DW1T1G MUN5315DW1T1G MUN5316DW1T1G MUN5330DW1T1G MUN5331DW1T1G MUN5332DW1T1G MUN5333DW1T1G MUN5334DW1T1G MUN5335DW1T1G Resistor Ratio MUN5311DW1T1G/MUN5312DW1T1G/MUN5313DW1T1G MUN5314DW1T1G MUN5315DW1T1G/MUN5316DW1T1G MUN5330DW1T1G/MUN5331DW1T1G/MUN5332DW1T1G MUN5333DW1T1G MUN5334DW1T1G MUN5335DW1T1G 4. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0% ALL MUN5311DW1T1G SERIES DEVICES PD, POWER DISSIPATION (mW) 300 250 200 150 100 50 0 −50 RqJA = 490°C/W 0 50 100 TA, AMBIENT TEMPERATURE (°C) Figure 1. Derating Curve http://onsemi.com 5 150 MUN5311DW1T1G Series 1 1000 IC/IB = 10 hFE , DC CURRENT GAIN (NORMALIZED) VCE(sat) , COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS − MUN5311DW1T1G NPN TRANSISTOR TA=-25°C 25°C 0.1 75°C 0.01 0.001 0 20 40 IC, COLLECTOR CURRENT (mA) VCE = 10 V TA=75°C 25°C -25°C 100 10 50 1 10 IC, COLLECTOR CURRENT (mA) Figure 2. VCE(sat) versus IC Figure 3. DC Current Gain 100 IC, COLLECTOR CURRENT (mA) 2 1 0 0 10 20 30 40 VR, REVERSE BIAS VOLTAGE (VOLTS) 25°C 75°C f = 1 MHz IE = 0 V TA = 25°C 1 0.1 0.01 VO = 5 V 0.001 50 TA=-25°C 10 0 1 2 5 6 7 3 4 Vin, INPUT VOLTAGE (VOLTS) 10 VO = 0.2 V TA=-25°C 25°C 75°C 1 0.1 0 10 8 9 Figure 5. Output Current versus Input Voltage Figure 4. Output Capacitance V in , INPUT VOLTAGE (VOLTS) C ob , CAPACITANCE (pF) 4 3 100 20 30 IC, COLLECTOR CURRENT (mA) 40 Figure 6. Input Voltage versus Output Current http://onsemi.com 6 50 10 MUN5311DW1T1G Series 1000 1 IC/IB = 10 hFE , DC CURRENT GAIN (NORMALIZED) VCE(sat) , COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS − MUN5311DW1T1G PNP TRANSISTOR TA=-25°C 0.1 25°C 75°C 0.01 0 VCE = 10 V TA=75°C 25°C 100 10 20 40 IC, COLLECTOR CURRENT (mA) 50 -25°C 1 10 IC, COLLECTOR CURRENT (mA) Figure 7. VCE(sat) versus IC Figure 8. DC Current Gain 100 IC, COLLECTOR CURRENT (mA) 2 1 0 0 10 20 30 40 VR, REVERSE BIAS VOLTAGE (VOLTS) 25°C 75°C f = 1 MHz lE = 0 V TA = 25°C 1 0.1 0.01 0.001 50 TA=-25°C 10 VO = 5 V 0 Figure 9. Output Capacitance 1 2 3 4 5 6 7 Vin, INPUT VOLTAGE (VOLTS) VO = 0.2 V TA=-25°C 10 25°C 75°C 1 0.1 0 10 8 9 Figure 10. Output Current versus Input Voltage 100 V in , INPUT VOLTAGE (VOLTS) Cob , CAPACITANCE (pF) 4 3 100 20 30 IC, COLLECTOR CURRENT (mA) 40 50 Figure 11. Input Voltage versus Output Current http://onsemi.com 7 10 MUN5311DW1T1G Series 1000 1 hFE , DC CURRENT GAIN (NORMALIZED) VCE(sat) , COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS − MUN5312DW1T1G NPN TRANSISTOR IC/IB = 10 25°C TA=-25°C 0.1 75°C 0.01 VCE = 10 V TA=75°C 25°C -25°C 100 10 0.001 0 20 IC, COLLECTOR CURRENT (mA) 50 40 1 10 IC, COLLECTOR CURRENT (mA) Figure 12. VCE(sat) versus IC Figure 13. DC Current Gain 4 100 2 1 75°C 25°C TA=-25°C 10 1 0.1 0.01 VO = 5 V 0 0 10 20 30 40 VR, REVERSE BIAS VOLTAGE (VOLTS) 0.001 50 Figure 14. Output Capacitance 0 2 4 6 Vin, INPUT VOLTAGE (VOLTS) VO = 0.2 V TA=-25°C 10 25°C 75°C 1 0.1 0 10 8 10 Figure 15. Output Current versus Input Voltage 100 V in , INPUT VOLTAGE (VOLTS) C ob , CAPACITANCE (pF) IC, COLLECTOR CURRENT (mA) f = 1 MHz IE = 0 V TA = 25°C 3 100 20 30 40 IC, COLLECTOR CURRENT (mA) Figure 16. Input Voltage versus Output Current http://onsemi.com 8 50 MUN5311DW1T1G Series 1000 10 h FE , DC CURRENT GAIN (NORMALIZED) VCE(sat) , COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS − MUN5312DW1T1G PNP TRANSISTOR IC/IB = 10 1 25°C TA=-25°C 75°C 0.1 0.01 VCE = 10 V TA=75°C 25°C -25°C 100 10 0 20 IC, COLLECTOR CURRENT (mA) 40 1 50 10 Figure 17. VCE(sat) versus IC Figure 18. DC Current Gain 100 IC, COLLECTOR CURRENT (mA) 3 2 1 0 10 20 30 40 VR, REVERSE BIAS VOLTAGE (VOLTS) 25°C 75°C f = 1 MHz lE = 0 V TA = 25°C TA=-25°C 10 1 0.1 0.01 0.001 50 Figure 19. Output Capacitance VO = 5 V 0 1 2 3 4 5 6 7 Vin, INPUT VOLTAGE (VOLTS) VO = 0.2 V TA=-25°C 10 25°C 75°C 1 0.1 0 10 8 9 10 Figure 20. Output Current versus Input Voltage 100 V in , INPUT VOLTAGE (VOLTS) C ob , CAPACITANCE (pF) 4 0 100 IC, COLLECTOR CURRENT (mA) 20 30 IC, COLLECTOR CURRENT (mA) 40 50 Figure 21. Input Voltage versus Output Current http://onsemi.com 9 MUN5311DW1T1G Series 10 1000 IC/IB = 10 h FE , DC CURRENT GAIN (NORMALIZED) VCE(sat) , COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS − MUN5313DW1T1G NPN TRANSISTOR 1 25°C TA=-25°C 75°C 0.1 VCE = 10 V TA=75°C 25°C -25°C 100 0.01 0 10 50 20 40 IC, COLLECTOR CURRENT (mA) 10 IC, COLLECTOR CURRENT (mA) 1 Figure 22. VCE(sat) versus IC Figure 23. DC Current Gain 1 100 f = 1 MHz IE = 0 V TA = 25°C IC, COLLECTOR CURRENT (mA) 0.4 0.2 0 0 25°C 75°C 0.6 TA=-25°C 10 1 0.1 0.01 VO = 5 V 0.001 50 10 20 30 40 VR, REVERSE BIAS VOLTAGE (VOLTS) 0 2 4 6 Vin, INPUT VOLTAGE (VOLTS) 100 VO = 0.2 V TA=-25°C 10 25°C 75°C 1 0.1 0 10 8 10 Figure 25. Output Current versus Input Voltage Figure 24. Output Capacitance V in , INPUT VOLTAGE (VOLTS) C ob , CAPACITANCE (pF) 0.8 100 20 30 40 50 IC, COLLECTOR CURRENT (mA) Figure 26. Input Voltage versus Output Current http://onsemi.com 10 MUN5311DW1T1G Series TYPICAL ELECTRICAL CHARACTERISTICS − MUN5313DW1T1G PNP TRANSISTOR VCE(sat) , COLLECTOR VOLTAGE (VOLTS) 1 1000 TA=-25°C h FE , DC CURRENT GAIN (NORMALIZED) IC/IB = 10 25°C 75°C 0.1 0.01 0 10 20 30 IC, COLLECTOR CURRENT (mA) TA=75°C 25°C -25°C 100 10 40 1 10 IC, COLLECTOR CURRENT (mA) Figure 27. VCE(sat) versus IC Figure 28. DC Current Gain 1 100 0.6 0.4 0.2 0 0 -25°C 1 0.1 0.01 Figure 29. Output Capacitance VO = 5 V 0 1 2 3 4 5 6 7 Vin, INPUT VOLTAGE (VOLTS) VO = 0.2 V TA=-25°C 25°C 75°C 1 0.1 0 10 8 9 10 Figure 30. Output Current versus Input Voltage 100 10 25°C TA=75°C 10 0.001 50 10 20 30 40 VR, REVERSE BIAS VOLTAGE (VOLTS) V in , INPUT VOLTAGE (VOLTS) C ob , CAPACITANCE (pF) IC, COLLECTOR CURRENT (mA) f = 1 MHz lE = 0 V TA = 25°C 0.8 100 20 30 IC, COLLECTOR CURRENT (mA) 40 50 Figure 31. Input Voltage versus Output Current http://onsemi.com 11 MUN5311DW1T1G Series 1 300 IC/IB = 10 h FE , DC CURRENT GAIN (NORMALIZED) VCE(sat) , COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS − MUN5314DW1T1G NPN TRANSISTOR TA=-25°C 25°C 0.1 75°C 0.01 0.001 0 20 40 60 IC, COLLECTOR CURRENT (mA) TA=75°C VCE = 10 250 25°C 200 -25°C 150 100 50 0 80 1 2 4 6 Figure 32. VCE(sat) versus IC 100 f = 1 MHz lE = 0 V TA = 25°C 3 TA=75°C IC, COLLECTOR CURRENT (mA) 3.5 2.5 2 1.5 1 0.5 0 2 4 6 8 10 15 20 25 30 35 VR, REVERSE BIAS VOLTAGE (VOLTS) 40 45 25°C -25°C 10 VO = 5 V 1 50 Figure 34. Output Capacitance 0 2 4 6 Vin, INPUT VOLTAGE (VOLTS) VO = 0.2 V TA=-25°C 25°C 75°C 1 0.1 0 10 8 Figure 35. Output Current versus Input Voltage 10 V in , INPUT VOLTAGE (VOLTS) Cob , CAPACITANCE (pF) 90 100 Figure 33. DC Current Gain 4 0 8 10 15 20 40 50 60 70 80 IC, COLLECTOR CURRENT (mA) 20 30 IC, COLLECTOR CURRENT (mA) 40 Figure 36. Input Voltage versus Output Current http://onsemi.com 12 50 10 MUN5311DW1T1G Series 180 1 IC/IB = 10 hFE , DC CURRENT GAIN (NORMALIZED) VCE(sat) , COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS − MUN5314DW1T1G PNP TRANSISTOR TA=-25°C 25°C 0.1 75°C 0.01 0.001 0 20 40 60 IC, COLLECTOR CURRENT (mA) TA=75°C VCE = 10 V 160 25°C 140 -25°C 120 100 80 60 40 20 0 80 1 2 4 6 Figure 37. VCE(sat) versus IC 100 TA=75°C 3.5 IC, COLLECTOR CURRENT (mA) f = 1 MHz lE = 0 V TA = 25°C 4 3 2.5 2 1.5 1 0.5 0 2 4 6 8 10 15 20 25 30 35 VR, REVERSE BIAS VOLTAGE (VOLTS) 40 45 10 VO = 5 V 0 2 4 6 Vin, INPUT VOLTAGE (VOLTS) VO = 0.2 V 25°C TA=-25°C 75°C 1 0 10 8 10 Figure 40. Output Current versus Input Voltage 10 0.1 25°C -25°C 1 50 Figure 39. Output Capacitance V in , INPUT VOLTAGE (VOLTS) Cob , CAPACITANCE (pF) 80 90 100 Figure 38. DC Current Gain 4.5 0 8 10 15 20 40 50 60 70 IC, COLLECTOR CURRENT (mA) 20 30 IC, COLLECTOR CURRENT (mA) 40 50 Figure 41. Input Voltage versus Output Current http://onsemi.com 13 MUN5311DW1T1G Series 1000 1 75°C 0.1 −25°C 25°C 0.01 0.001 0 20 40 30 10 IC, COLLECTOR CURRENT (mA) TA = −25°C 100 10 1 50 25°C 1 10 IC, COLLECTOR CURRENT (mA) Figure 42. VCE(sat) versus IC IC, COLLECTOR CURRENT (mA) 100 f = 1 MHz IE = 0 V TA = 25°C 10 8 6 4 2 0 5 10 15 20 25 30 35 40 45 VR, REVERSE BIAS VOLTAGE (VOLTS) 75°C 10 25°C 1 TA = −25°C 0.1 0.01 0.001 50 Figure 44. Output Capacitance VO = 5 V 0 1 2 3 4 5 6 7 8 Vin, INPUT VOLTAGE (VOLTS) TA = −25°C 1 75°C 25°C VO = 0.2 V 0.1 0 9 10 Figure 45. Output Current versus Input Voltage 10 Vin, INPUT VOLTAGE (VOLTS) Cob, CAPACITANCE (pF) 100 Figure 43. DC Current Gain 12 0 VCE = 10 V 75°C IC/IB = 10 hFE, DC CURRENT GAIN VCE(sat), COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS — MUN5315DW1T1G NPN TRANSISTOR 10 20 30 40 IC, COLLECTOR CURRENT (mA) Figure 46. Input Voltage versus Output Current http://onsemi.com 14 50 MUN5311DW1T1G Series 1000 1 IC/IB = 10 75°C 0.1 −25°C 25°C 0.01 0.001 0 20 40 30 10 IC, COLLECTOR CURRENT (mA) 25°C 10 1 50 TA = −25°C 100 1 10 IC, COLLECTOR CURRENT (mA) Figure 47. VCE(sat) versus IC 100 IC, COLLECTOR CURRENT (mA) 4 f = 1 MHz IE = 0 V TA = 25°C 3.5 3 2.5 2 1.5 1 0.5 0 5 10 15 20 25 30 35 40 45 VR, REVERSE BIAS VOLTAGE (VOLTS) 75°C 10 25°C 1 TA = −25°C 0.1 0.01 0.001 50 Figure 49. Output Capacitance VO = 5 V 0 1 2 3 4 5 6 7 8 Vin, INPUT VOLTAGE (VOLTS) TA = −25°C 1 25°C 75°C VO = 0.2 V 0.1 0 9 10 Figure 50. Output Current versus Input Voltage 10 Vin, INPUT VOLTAGE (VOLTS) Cob, CAPACITANCE (pF) 100 Figure 48. DC Current Gain 4.5 0 VCE = 10 V 75°C hFE, DC CURRENT GAIN VCE(sat), COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS — MUN5315DW1T1G PNP TRANSISTOR 10 20 30 40 IC, COLLECTOR CURRENT (mA) Figure 51. Input Voltage versus Output Current http://onsemi.com 15 50 MUN5311DW1T1G Series 1000 1 IC/IB = 10 75°C 0.1 −25°C 25°C 0.01 0.001 0 20 40 30 10 IC, COLLECTOR CURRENT (mA) 25°C 10 1 50 TA = −25°C 100 1 10 IC, COLLECTOR CURRENT (mA) Figure 52. VCE(sat) versus IC IC, COLLECTOR CURRENT (mA) 100 f = 1 MHz IE = 0 V TA = 25°C 10 8 6 4 2 0 5 10 15 20 25 30 35 40 45 VR, REVERSE BIAS VOLTAGE (VOLTS) 75°C 10 25°C 1 TA = −25°C 0.1 0.01 0.001 50 Figure 54. Output Capacitance VO = 5 V 0 1 2 3 4 5 6 7 8 Vin, INPUT VOLTAGE (VOLTS) TA = −25°C 1 75°C 25°C VO = 0.2 V 0.1 0 9 10 Figure 55. Output Current versus Input Voltage 10 Vin, INPUT VOLTAGE (VOLTS) Cob, CAPACITANCE (pF) 100 Figure 53. DC Current Gain 12 0 VCE = 10 V 75°C hFE, DC CURRENT GAIN VCE(sat), COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS — MUN5316DW1T1G NPN TRANSISTOR 10 20 30 40 IC, COLLECTOR CURRENT (mA) Figure 56. Input Voltage versus Output Current http://onsemi.com 16 50 MUN5311DW1T1G Series 1000 1 75°C 0.1 −25°C 25°C 0.01 0.001 0 20 40 30 10 IC, COLLECTOR CURRENT (mA) TA = −25°C 25°C 100 10 1 50 1 10 IC, COLLECTOR CURRENT (mA) Figure 57. VCE(sat) versus IC 100 3 2.5 2 1.5 1 0.5 0 0 5 10 15 20 25 30 35 40 45 VR, REVERSE BIAS VOLTAGE (VOLTS) 75°C 10 25°C TA = −25°C 1 0.1 0.01 0.001 50 Figure 59. Output Capacitance VO = 5 V 0 1 2 3 4 5 6 7 8 Vin, INPUT VOLTAGE (VOLTS) TA = −25°C 1 75°C 25°C VO = 0.2 V 0.1 0 9 10 Figure 60. Output Current versus Input Voltage 10 Vin, INPUT VOLTAGE (VOLTS) Cob, CAPACITANCE (pF) IC, COLLECTOR CURRENT (mA) f = 1 MHz IE = 0 V TA = 25°C 3.5 100 Figure 58. DC Current Gain 4.5 4 VCE = 10 V 75°C IC/IB = 10 hFE, DC CURRENT GAIN VCE(sat), COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS — MUN5316DW1T1G PNP TRANSISTOR 10 20 30 40 IC, COLLECTOR CURRENT (mA) Figure 61. Input Voltage versus Output Current http://onsemi.com 17 50 MUN5311DW1T1G Series 1000 1 VCE = 10 V IC/IB = 10 hFE, DC CURRENT GAIN VCE(sat), COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS — MUN5330DW1T1G NPN TRANSISTOR 75°C 0.1 −25°C 25°C 0.01 0.001 0 5 10 15 20 25 IC, COLLECTOR CURRENT (mA) 100 75°C 10 25°C TA = −25°C 1 30 1 10 IC, COLLECTOR CURRENT (mA) Figure 62. VCE(sat) versus IC Figure 63. DC Current Gain 10 75°C 10 Vin, INPUT VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (mA) 100 25°C 1 TA = −25°C 0.1 0.01 0.001 100 VO = 5 V 0 1 2 3 4 5 6 7 8 Vin, INPUT VOLTAGE (VOLTS) 9 10 TA = −25°C 1 75°C 25°C VO = 0.2 V 0.1 0 5 10 15 20 IC, COLLECTOR CURRENT (mA) Figure 65. Input Voltage versus Output Current Figure 64. Output Current versus Input Voltage http://onsemi.com 18 25 MUN5311DW1T1G Series 100 1 IC/IB = 10 hFE, DC CURRENT GAIN VCE(sat), COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS — MUN5330DW1T1G PNP TRANSISTOR 75°C 0.1 −25°C 25°C 0.01 75°C 10 25°C TA = −25°C VCE = 10 V 0.001 0 10 20 40 30 IC, COLLECTOR CURRENT (mA) 1 50 1 10 IC, COLLECTOR CURRENT (mA) Figure 66. VCE(sat) versus IC Figure 67. DC Current Gain 4.5 f = 1 MHz IE = 0 V TA = 25°C 3.5 3 2.5 2 1.5 1 0.5 0 0 5 10 15 20 25 30 35 40 45 VR, REVERSE BIAS VOLTAGE (VOLTS) 75°C 10 25°C 1 TA = −25°C 0.1 0.01 0.001 50 Figure 68. Output Capacitance VO = 5 V 0 1 2 7 8 3 4 5 6 Vin, INPUT VOLTAGE (VOLTS) TA = −25°C 75°C 1 25°C VO = 0.2 V 0.1 0 9 10 Figure 69. Output Current versus Input Voltage 10 Vin, INPUT VOLTAGE (VOLTS) Cob, CAPACITANCE (pF) IC, COLLECTOR CURRENT (mA) 100 4 100 10 20 30 40 IC, COLLECTOR CURRENT (mA) Figure 70. Input Voltage versus Output Current http://onsemi.com 19 50 MUN5311DW1T1G Series 1000 1 VCE = 10 V IC/IB = 10 hFE, DC CURRENT GAIN VCE(sat), COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS — MUN5331DW1T1G NPN TRANSISTOR 75°C 0.1 −25°C 25°C 0.01 0.001 0 5 10 15 20 25 IC, COLLECTOR CURRENT (mA) 100 75°C 10 1 30 TA = −25°C 1 10 IC, COLLECTOR CURRENT (mA) Figure 71. VCE(sat) versus IC IC, COLLECTOR CURRENT (mA) 100 f = 1 MHz IE = 0 V TA = 25°C 10 8 6 4 2 0 5 10 15 20 25 30 35 40 45 VR, REVERSE BIAS VOLTAGE (VOLTS) 10 75°C 25°C 1 TA = −25°C 0.1 0.01 0.001 50 Figure 73. Output Capacitance VO = 5 V 0 1 2 3 4 5 6 7 8 Vin, INPUT VOLTAGE (VOLTS) TA = −25°C 1 75°C 25°C VO = 0.2 V 0.1 0 9 10 Figure 74. Output Current versus Input Voltage 10 Vin, INPUT VOLTAGE (VOLTS) Cob, CAPACITANCE (pF) 100 Figure 72. DC Current Gain 12 0 25°C 5 10 15 20 IC, COLLECTOR CURRENT (mA) Figure 75. Input Voltage versus Output Current http://onsemi.com 20 25 MUN5311DW1T1G Series 100 1 IC/IB = 10 hFE, DC CURRENT GAIN VCE(sat), COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS — MUN5331DW1T1G PNP TRANSISTOR 75°C 0.1 −25°C 25°C 0.01 TA = −25°C VCE = 10 V 0.001 0 10 20 40 30 IC, COLLECTOR CURRENT (mA) 1 50 1 10 IC, COLLECTOR CURRENT (mA) Figure 76. VCE(sat) versus IC IC, COLLECTOR CURRENT (mA) 100 4 f = 1 MHz IE = 0 V TA = 25°C 3.5 3 2.5 2 1.5 1 0.5 0 5 10 15 20 25 30 35 40 45 VR, REVERSE BIAS VOLTAGE (VOLTS) 75°C 10 25°C 1 TA = −25°C 0.1 0.01 0.001 50 Figure 78. Output Capacitance VO = 5 V 0 1 2 7 8 3 4 5 6 Vin, INPUT VOLTAGE (VOLTS) TA = −25°C 75°C 1 25°C VO = 0.2 V 0.1 0 9 10 Figure 79. Output Current versus Input Voltage 10 Vin, INPUT VOLTAGE (VOLTS) 0 100 Figure 77. DC Current Gain 4.5 Cob, CAPACITANCE (pF) 25°C 75°C 10 10 20 30 40 IC, COLLECTOR CURRENT (mA) Figure 80. Input Voltage versus Output Current http://onsemi.com 21 50 MUN5311DW1T1G Series 1000 1 VCE = 10 V IC/IB = 10 hFE, DC CURRENT GAIN VCE(sat), COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS — MUN5332DW1T1G NPN TRANSISTOR 75°C 0.1 −25°C 25°C 0.01 0.001 0 20 40 30 10 IC, COLLECTOR CURRENT (mA) 25°C 10 TA = −25°C 1 50 75°C 100 1 10 IC, COLLECTOR CURRENT (mA) Figure 81. VCE(sat) versus IC Figure 82. DC Current Gain IC, COLLECTOR CURRENT (mA) 100 f = 1 MHz IE = 0 V TA = 25°C 8 6 4 2 0 0 5 10 15 20 25 30 35 40 45 VR, REVERSE BIAS VOLTAGE (VOLTS) 75°C 10 25°C 1 TA = −25°C 0.1 0.01 0.001 50 Figure 83. Output Capacitance VO = 5 V 0 1 2 3 4 5 6 7 8 Vin, INPUT VOLTAGE (VOLTS) TA = −25°C 1 75°C 25°C VO = 0.2 V 0.1 0 9 10 Figure 84. Output Current versus Input Voltage 10 Vin, INPUT VOLTAGE (VOLTS) Cob, CAPACITANCE (pF) 12 10 100 10 20 30 40 IC, COLLECTOR CURRENT (mA) Figure 85. Input Voltage versus Output Current http://onsemi.com 22 50 MUN5311DW1T1G Series 1000 1 VCE = 10 V IC/IB = 10 hFE, DC CURRENT GAIN VCE(sat), COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS — MUN5332DW1T1G PNP TRANSISTOR 75°C 0.1 −25°C 25°C 0.01 0.001 0 10 20 40 30 IC, COLLECTOR CURRENT (mA) TA = −25°C 10 1 50 75°C 100 1 10 IC, COLLECTOR CURRENT (mA) Figure 86. VCE(sat) versus IC 100 IC, COLLECTOR CURRENT (mA) f = 1 MHz IE = 0 V TA = 25°C 5 4 3 2 1 0 5 10 15 20 25 30 35 40 45 VR, REVERSE BIAS VOLTAGE (VOLTS) 75°C 10 25°C 1 TA = −25°C 0.1 0.01 0.001 50 Figure 88. Output Capacitance VO = 5 V 0 1 2 3 4 5 6 7 8 Vin, INPUT VOLTAGE (VOLTS) TA = −25°C 1 75°C 25°C VO = 0.2 V 0.1 0 9 10 Figure 89. Output Current versus Input Voltage 10 Vin, INPUT VOLTAGE (VOLTS) Cob, CAPACITANCE (pF) 100 Figure 87. DC Current Gain 6 0 25°C 10 20 30 40 IC, COLLECTOR CURRENT (mA) Figure 90. Input Voltage versus Output Current http://onsemi.com 23 50 MUN5311DW1T1G Series 1000 1 VCE = 10 V IC/IB = 10 0.1 hFE, DC CURRENT GAIN VCE(sat), COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS — MUN5333DW1T1G NPN TRANSISTOR 75°C −25°C 25°C 0.01 0.001 0 5 10 15 25 20 IC, COLLECTOR CURRENT (mA) 75°C 1 10 IC, COLLECTOR CURRENT (mA) Figure 91. VCE(sat) versus IC f = 1 MHz IE = 0 V TA = 25°C 2.5 2 1.5 1 0.5 0 0 5 10 15 20 25 30 35 40 45 VR, REVERSE BIAS VOLTAGE (VOLTS) 75°C 10 25°C 1 TA = −25°C 0.1 0.01 0.001 50 Figure 93. Output Capacitance VO = 5 V 0 1 2 3 4 5 6 7 8 Vin, INPUT VOLTAGE (VOLTS) TA = −25°C 1 75°C 25°C VO = 0.2 V 0.1 0 9 10 Figure 94. Output Current versus Input Voltage 10 Vin, INPUT VOLTAGE (VOLTS) Cob, CAPACITANCE (pF) IC, COLLECTOR CURRENT (mA) 100 3 100 Figure 92. DC Current Gain 4 3.5 25°C 10 1 30 TA = −25°C 100 5 10 15 20 IC, COLLECTOR CURRENT (mA) Figure 95. Input Voltage versus Output Current http://onsemi.com 24 25 MUN5311DW1T1G Series 1000 1 VCE = 10 V IC/IB = 10 hFE, DC CURRENT GAIN VCE(sat), COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS — MUN5333DW1T1G PNP TRANSISTOR 75°C 0.1 −25°C 25°C 0.01 0.001 0 20 40 30 10 IC, COLLECTOR CURRENT (mA) 75°C 100 1 10 IC, COLLECTOR CURRENT (mA) Figure 96. VCE(sat) versus IC IC, COLLECTOR CURRENT (mA) 100 f = 1 MHz IE = 0 V TA = 25°C 7 6 5 4 3 2 1 0 5 10 15 20 25 30 35 40 45 VR, REVERSE BIAS VOLTAGE (VOLTS) 75°C 10 25°C 1 0.1 TA = −25°C 0.01 0.001 50 Figure 98. Output Capacitance VO = 5 V 0 1 2 7 8 3 4 5 6 Vin, INPUT VOLTAGE (VOLTS) TA = −25°C 1 75°C 25°C VO = 0.2 V 0.1 0 9 10 Figure 99. Output Current versus Input Voltage 10 Vin, INPUT VOLTAGE (VOLTS) Cob, CAPACITANCE (pF) 100 Figure 97. DC Current Gain 8 0 25°C 10 1 50 TA = −25°C 10 20 30 40 IC, COLLECTOR CURRENT (mA) Figure 100. Input Voltage versus Output Current http://onsemi.com 25 50 MUN5311DW1T1G Series 1000 1 VCE = 10 V IC/IB = 10 75°C hFE, DC CURRENT GAIN VCE(sat), COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS — MUN5334DW1T1G NPN TRANSISTOR 75°C 0.1 −25°C 25°C 0.01 0.001 0 20 40 30 10 IC, COLLECTOR CURRENT (mA) 100 1 10 IC, COLLECTOR CURRENT (mA) Figure 101. VCE(sat) versus IC IC, COLLECTOR CURRENT (mA) 100 f = 1 MHz IE = 0 V TA = 25°C 3 2.5 2 1.5 1 0.5 0 5 10 15 20 25 30 35 40 45 VR, REVERSE BIAS VOLTAGE (VOLTS) 25°C 1 0.1 TA = −25°C 0.01 0.001 50 75°C 10 VO = 5 V 0 Figure 103. Output Capacitance 1 2 7 8 3 4 5 6 Vin, INPUT VOLTAGE (VOLTS) 10 TA = −25°C 1 75°C 25°C VO = 0.2 V 0.1 0 9 Figure 104. Output Current versus Input Voltage 100 Vin, INPUT VOLTAGE (VOLTS) Cob, CAPACITANCE (pF) 100 Figure 102. DC Current Gain 3.5 0 25°C 10 1 50 TA = −25°C 10 20 30 40 IC, COLLECTOR CURRENT (mA) Figure 105. Input Voltage versus Output Current http://onsemi.com 26 50 10 MUN5311DW1T1G Series 1000 1 VCE = 10 V IC/IB = 10 0.1 75°C −25°C 0.01 0.001 hFE, DC CURRENT GAIN VCE(sat), COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS — MUN5334DW1T1G PNP TRANSISTOR 0 5 25°C 10 15 20 25 IC, COLLECTOR CURRENT (mA) 30 75°C 100 TA = −25°C 25°C 10 1 1 Figure 106. VCE(sat) versus IC 10 IC, COLLECTOR CURRENT (mA) Figure 107. DC Current Gain http://onsemi.com 27 100 MUN5311DW1T1G Series 1000 1 VCE = 10 V IC/IB = 10 hFE, DC CURRENT GAIN VCE(sat), COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS — MUN5335DW1T1G NPN TRANSISTOR 75°C 0.1 −25°C 25°C 0.01 0.001 0 20 40 30 10 IC, COLLECTOR CURRENT (mA) 75°C 100 1 10 IC, COLLECTOR CURRENT (mA) Figure 108. VCE(sat) versus IC IC, COLLECTOR CURRENT (mA) f = 1 MHz IE = 0 V TA = 25°C 6 4 2 0 0 5 10 15 20 25 30 35 40 45 VR, REVERSE BIAS VOLTAGE (VOLTS) 10 25°C 1 TA = −25°C 0.1 0.01 0.001 50 75°C VO = 5 V 0 Figure 110. Output Capacitance 1 2 3 4 5 6 7 8 Vin, INPUT VOLTAGE (VOLTS) TA = −25°C 1 75°C 25°C VO = 0.2 V 0.1 0 9 Figure 111. Output Current versus Input Voltage 10 Vin, INPUT VOLTAGE (VOLTS) Cob, CAPACITANCE (pF) 100 8 100 Figure 109. DC Current Gain 12 10 25°C 10 1 50 TA = −25°C 10 20 30 40 IC, COLLECTOR CURRENT (mA) Figure 112. Input Voltage versus Output Current http://onsemi.com 28 50 10 MUN5311DW1T1G Series 1000 1 VCE = 10 V IC/IB = 10 75°C hFE, DC CURRENT GAIN VCE(sat), COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS — MUN5335DW1T1G PNP TRANSISTOR 75°C 0.1 −25°C 25°C 0.01 0.001 0 10 20 40 30 IC, COLLECTOR CURRENT (mA) 100 1 10 IC, COLLECTOR CURRENT (mA) Figure 113. VCE(sat) versus IC f = 1 MHz IE = 0 V TA = 25°C 3 2.5 2 1.5 1 0.5 0 0 5 10 15 20 25 30 35 40 45 VR, REVERSE BIAS VOLTAGE (VOLTS) 10 75°C 1 TA = −25°C 0.1 0.01 0.001 50 25°C VO = 5 V 0 Figure 115. Output Capacitance 1 2 7 8 3 4 5 6 Vin, INPUT VOLTAGE (VOLTS) 75°C 1 25°C TA = −25°C VO = 0.2 V 0.1 0 9 Figure 116. Output Current versus Input Voltage 10 Vin, INPUT VOLTAGE (VOLTS) Cob, CAPACITANCE (pF) IC, COLLECTOR CURRENT (mA) 100 3.5 100 Figure 114. DC Current Gain 4.5 4 25°C 10 1 50 TA = −25°C 10 20 30 40 IC, COLLECTOR CURRENT (mA) Figure 117. Input Voltage versus Output Current http://onsemi.com 29 50 10 MUN5311DW1T1G Series 1 0.1 0.01 75°C 25°C −25°C IC/IB = 10 0 1 2 3 4 5 IC, COLLECTOR CURRENT (mA) 6 7 hFE, DC CURRENT GAIN (NORMALIZED) VCE(sat), COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS — MUN5336DW1T1G NPN TRANSISTOR 1000 75°C TA = −25°C 100 10 VCE = 10 V 1 1 10 IC, COLLECTOR CURRENT (mA) Figure 118. VCE(sat) versus IC 100 IC, COLLECTOR CURRENT (mA) 1.0 f = 1 MHz IE = 0 V TA = 25°C 0.8 0.6 0.4 0.2 0 10 20 30 40 50 VR, REVERSE BIAS VOLTAGE (VOLTS) 25°C TA = −25°C 1 VO = 5 V 0.1 60 0 1 2 3 4 TA = −25°C VO = 0.2 V 75°C 0 2 6 7 8 9 Figure 121. Output Current versus Input Voltage 10 1 5 Vin, INPUT VOLTAGE (VOLTS) 100 25°C 75°C 10 Figure 120. Output Capacitance Vin, INPUT VOLTAGE (VOLTS) Cob, CAPACITANCE (pF) 100 Figure 119. DC Current Gain 1.2 0 25°C 4 6 8 10 12 14 16 IC, COLLECTOR CURRENT (mA) 18 Figure 122. Input Voltage versus Output Current http://onsemi.com 30 20 10 MUN5311DW1T1G Series 1000 1 75°C 75°C 25°C 0.1 0.01 0.001 0 VCE = 10 V −25°C IC/IB = 10 hFE, DC CURRENT GAIN VCE(sat), COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS — MUN5336DW1T1G PNP TRANSISTOR 10 20 40 30 IC, COLLECTOR CURRENT (mA) 100 1 10 IC, COLLECTOR CURRENT (mA) Figure 123. VCE(sat) versus IC IC, COLLECTOR CURRENT (mA) 100 4.5 f = 1 MHz IE = 0 V TA = 25°C 4 3.5 3 2.5 2 1.5 1 0.5 0 5 10 15 20 25 30 35 40 45 VR, REVERSE BIAS VOLTAGE (VOLTS) 1 25°C TA = −25°C 0.1 0.01 0.001 50 75°C 10 VO = 5 V 0 Figure 125. Output Capacitance 1 2 3 4 5 6 7 8 Vin, INPUT VOLTAGE (VOLTS) TA = −25°C 10 75°C 1 25°C VO = 0.2 V 0.1 0 9 Figure 126. Output Current versus Input Voltage 100 Vin, INPUT VOLTAGE (VOLTS) Cob, CAPACITANCE (pF) 100 Figure 124. DC Current Gain 5 0 25°C 10 1 50 TA = −25°C 10 20 30 40 IC, COLLECTOR CURRENT (mA) Figure 127. Input Voltage versus Output Current http://onsemi.com 31 50 10 MUN5311DW1T1G Series 1 TA = −25°C 75°C 0.1 25°C 0.01 IC/IB = 10 0 5 10 15 20 25 30 35 40 IC, COLLECTOR CURRENT (mA) 45 50 hFE, DC CURRENT GAIN (NORMALIZED) VCE(sat), COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS — MUN5337DW1T1G NPN TRANSISTOR 1000 75°C TA = −25°C 100 25°C VCE = 10 V 10 1 10 IC, COLLECTOR CURRENT (mA) Figure 128. VCE(sat) versus IC Figure 129. DC Current Gain 100 1.0 IC, COLLECTOR CURRENT (mA) f = 1 MHz IE = 0 V TA = 25°C 0.8 0.6 0.4 0.2 0 0 10 20 30 40 50 VR, REVERSE BIAS VOLTAGE (VOLTS) TA = −25°C 10 25°C 1 0.1 0.01 0.001 60 75°C VO = 5 V 0 1 2 3 4 VO = 0.2 V 1 TA = −25°C 75°C 25°C 0 6 7 8 9 10 Figure 131. Output Current versus Input Voltage 100 10 5 Vin, INPUT VOLTAGE (VOLTS) Figure 130. Output Capacitance Vin, INPUT VOLTAGE (VOLTS) Cob, CAPACITANCE (pF) 1.4 1.2 100 5 10 15 20 IC, COLLECTOR CURRENT (mA) Figure 132. Input Voltage versus Output Current http://onsemi.com 32 25 11 MUN5311DW1T1G Series 1000 1 IC/IB = 10 −25°C 75°C 0.1 hFE, DC CURRENT GAIN VCE(sat), COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS — MUN5337DW1T1G PNP TRANSISTOR 25°C 0.01 0.001 0 10 20 40 30 IC, COLLECTOR CURRENT (mA) 75°C 100 TA = −25°C 1 10 IC, COLLECTOR CURRENT (mA) Figure 133. VCE(sat) versus IC IC, COLLECTOR CURRENT (mA) 100 4.5 f = 1 MHz IE = 0 V TA = 25°C 4 3.5 3 2.5 2 1.5 1 0.5 0 5 10 15 20 25 30 35 40 45 VR, REVERSE BIAS VOLTAGE (VOLTS) 25°C 1 TA = −25°C 0.1 0.01 0.001 50 75°C 10 VO = 5 V 0 Figure 135. Output Capacitance 1 2 3 4 5 6 7 8 Vin, INPUT VOLTAGE (VOLTS) TA = −25°C 10 75°C 1 25°C VO = 0.2 V 0.1 0 9 Figure 136. Output Current versus Input Voltage 100 Vin, INPUT VOLTAGE (VOLTS) Cob, CAPACITANCE (pF) 100 Figure 134. DC Current Gain 5 0 25°C 10 1 50 VCE = 10 V 10 20 30 40 IC, COLLECTOR CURRENT (mA) Figure 137. Input Voltage versus Output Current http://onsemi.com 33 50 10 MUN5311DW1T1G Series PACKAGE DIMENSIONS SC−88/SC70−6/SOT−363 CASE 419B−02 ISSUE W D e 6 5 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 419B−01 OBSOLETE, NEW STANDARD 419B−02. DIM A A1 A3 b C D E e L HE 4 HE −E− 1 2 3 b 6 PL 0.2 (0.008) M E A3 C A1 INCHES NOM MAX 0.037 0.043 0.002 0.004 0.008 REF 0.004 0.008 0.012 0.004 0.005 0.010 0.070 0.078 0.086 0.045 0.049 0.053 0.026 BSC 0.004 0.008 0.012 0.078 0.082 0.086 MIN 0.031 0.000 STYLE 1: PIN 1. EMITTER 2 2. BASE 2 3. COLLECTOR 1 4. EMITTER 1 5. BASE 1 6. COLLECTOR 2 M A MILLIMETERS MIN NOM MAX 0.80 0.95 1.10 0.00 0.05 0.10 0.20 REF 0.10 0.21 0.30 0.10 0.14 0.25 1.80 2.00 2.20 1.15 1.25 1.35 0.65 BSC 0.10 0.20 0.30 2.00 2.10 2.20 SOLDERING FOOTPRINT* 0.50 0.0197 L 0.65 0.025 0.65 0.025 0.40 0.0157 1.9 0.0748 SCALE 20:1 mm Ǔ ǒinches SC−88/SC70−6/SOT−363 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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