CMPD2836E CMPD2838E ENHANCED SPECIFICATION SURFACE MOUNT DUAL, SILICON SWITCHING DIODES SOT-23 CASE w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPD2836E and CMPD2838E are Enhanced versions of the CMPD2836 and CMPD2838 High Speed Switching Diodes. These devices are manufactured by the epitaxial planar process, in an epoxy molded surface mount SOT-23 package, designed for high speed switching applications. FEATURED ENHANCED SPECIFICATIONS: ♦ BVR from 75V min to 120V min. ♦ The following configurations are available: CMPD2836E DUAL, COMMON ANODE CMPD2838E DUAL, COMMON CATHODE MAXIMUM RATINGS: (TA=25 °C) ♦ Peak Repetitive Reverse Voltage Average Forward Current Peak Forward Current, tp=1.0s Power Dissipation Operating and Storage Junction Temperature Thermal Resistance VF from 1.2V max to 1.0V max. MARKING CODE: CA2E MARKING CODE: CA6E SYMBOL VRRM IO IFM PD TJ, Tstg ΘJA 120 200 300 350 -65 to +150 357 ELECTRICAL CHARACTERISTICS PER DIODE: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN TYP MAX ♦ IR VR=80V 100 ♦ BVR IR=100µA 120 150 ♦ VF IF=10mA 0.72 0.85 ♦ VF IF=50mA 0.84 0.95 ♦ VF IF=100mA 0.92 1.0 CT VR=0, f=1.0MHz 1.5 4.0 trr IR=IF=10mA, RL=100Ω, Rec. to 1.0mA 4.0 UNITS V mA mA mW °C °C/W UNITS nA V V V V pF ns ♦ Enhanced specification R3 (25-January 2010) CMPD2836E CMPD2838E ENHANCED SPECIFICATION SURFACE MOUNT DUAL, SILICON SWITCHING DIODES SOT-23 CASE - MECHANICAL OUTLINE PIN CONFIGURATIONS CMPD2836E CMPD2838E LEAD CODE: 1) Cathode D2 2) Cathode D1 3) Anode D1, D2 LEAD CODE: 1) Anode D2 2) Anode D1 3) Cathode D1, D2 MARKING CODE: CA2E MARKING CODE: CA6E R3 (25-January 2010) w w w. c e n t r a l s e m i . c o m