Fairchild FDS8947A Dual p-channel enhancement mode field effect transistor Datasheet

March 1998
FDS8947A
Dual P-Channel Enhancement Mode Field Effect Transistor
General Description
Features
SO-8 P-Channel enhancement mode power field effect
transistors are produced using Fairchild's proprietary, high cell
density, DMOS technology. This very high density process is
especially tailored to minimize on-state resistance and provide
superior switching performance. These devices are particularly
suited for low voltage applications such as notebook computer
power management and other battery powered circuits where
fast switching, low in-line power loss, and resistance to
transients are needed.
SuperSOTTM-6
SOT-23
SuperSOTTM-8
D2
D1
D2
D1
SO-8
S
FD 7A
4
89
pin 1
S1
Absolute Maximum Ratings
Symbol
G1
S2
G2
-4.0 A, -30 V. RDS(ON) = 0.052Ω @ VGS = -10 V
RDS(ON) = 0.080Ω @ VGS = -4.5 V.
High density cell design for extremely low RDS(ON).
High power and current handling capability in a widely
used surface mount package.
Dual MOSFET in surface mount package.
SO-8
SOIC-16
SOT-223
5
4
6
3
7
2
8
1
TA = 25oC unless other wise noted
Parameter
FDS8947A
Units
VDSS
Drain-Source Voltage
-30
V
-20
V
- 4.0
A
VGSS
Gate-Source Voltage
ID
Drain Current - Continuous
- Pulsed
-20
PD
Power Dissipation for Dual Operation
2
Power Dissipation for Single Operation
(Note 1a)
(Note 1a)
1.6
(Note 1b)
1
(Note 1c)
TJ,TSTG
Operating and Storage Temperature Range
W
0.9
-55 to 150
°C
THERMAL CHARACTERISTICS
RθJA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
78
°C/W
RθJC
Thermal Resistance, Junction-to-Case
(Note 1)
40
°C/W
© 1998 Fairchild Semiconductor Corporation
FDS8947A Rev.B
Electrical Characteristics (TA = 25 OC unless otherwise noted )
Symbol
Parameter
Conditions
Min
Typ
Max
Units
OFF CHARACTERISTICS
BVDSS
Drain-Source Breakdown Voltage
VGS = 0 V, I D = -250 µA
-30
V
∆BVDSS/∆TJ
Breakdown Voltage Temp. Coefficient
ID = -250 µA, Referenced to 25 C
IDSS
Zero Gate Voltage Drain Current
VDS = -24 V, VGS = 0 V
-1
µA
IGSSF
Gate - Body Leakage, Forward
VGS = 20 V, VDS = 0 V
-100
nA
IGSSR
Gate - Body Leakage, Reverse
VGS = -20 V, VDS= 0 V
-100
nA
-3
V
ON CHARACTERISTICS
VGS(th)
o
mV / oC
-23
(Note 2)
Gate Threshold Voltage
VDS = VGS, ID = -250 µA
-1
∆VGS(th)/∆TJ
Gate Threshold Voltage Temp. Coefficient
ID = -250 µA, Referenced to 25 C
RDS(ON)
Static Drain-Source On-Resistance
VGS = -10 V, I D = -4 A
o
VGS = -4.5 V, I D = -3.2 A
On-State Drain Current
VGS = -10 V, VDS = -5 V
gFS
Forward Transconductance
VDS = -10 V, I D = -4 A
mV /oC
4
TJ =125°C
ID(ON)
-1.5
0.044
0.052
0.06
0.085
0.067
0.08
-20
Ω
A
8
S
730
pF
400
pF
90
pF
DYNAMIC CH ARACTERISTICS
Ciss
Input Capacitance
Coss
Output Capacitance
VDS = -15 V, VGS = 0 V,
f = 1.0 MHz
Crss
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
(Note 2)
tD(on)
Turn - On Delay Time
VDS = -10 V, I D = -1 A
11
20
ns
tr
Turn - On Rise Time
VGS = -10 V , RGEN = 6 Ω
10
18
tD(off)
Turn - Off Delay Time
90
110
tf
Turn - Off Fall Time
55
80
Qg
Total Gate Charge
VDS = -10 V, I D = -4 A,
19
27
nC
Qgs
Gate-Source Charge
VGS = -10 V
3.5
Qgd
Gate-Drain Charge
-1.3
A
3.6
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
IS
Maximum Continuous Drain-Source Diode Forward Current
VSD
Drain-Source Diode Forward Voltage
VGS = 0 V, I S = -1.3 A
trr
Reverse Recovery Time
Irr
Reverse Recovery Current
VGS = 0 V, IF = -1.3 A
dIF/dt = 100 A/µs
(Note 2)
-0.75
-1.2
V
48
100
ns
0.8
A
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by
design while RθCA is determined by the user's board design.
a. 78OC/W on a 0.5 in2
pad of 2oz copper.
b. 125OC/W on a 0.02 in2
pad of 2oz copper.
c. 135OC/W on a 0.003 in2
pad of 2oz copper.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.
FDS8947A Rev.B
Typical Electrical Characteristics
15
3
-6.0V
-5.0V
-4.5V
R DS(on) , NORMALIZED
V GS =-10V
-4.0V
10
-3.5V
5
-3.0V
0
0
1
2
3
4
DRAIN-SOURCE ON-RESISTANCE
-ID , DRAIN-SOURCE CURRENT (A)
20
2.5
-4.0V
2
-4.5V
-5.0V
1.5
-6.0V
-10V
1
0.5
5
V GS =-3.5V
0
4
8
-VDS , DRAIN-SOURCE VOLTAGE (V)
R DS(ON) , ON-RESISTANCE (OHM)
VGS = -10V
1.2
1
0.8
-25
0
25
50
75
100
TJ , JUNCTION TEMPERATURE (°C)
Figure 3. On-Resistance Variation
Temperature.
-I D , DRAIN CURRENT (A)
I D = -2A
0.25
0.2
0.15
0.1
125
TA = 125°C
0.05
0
150
TA = 25°C
2
TJ = -55°C
25°C
15
125°C
10
5
1
2
3
4
5
-VGS , GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
6
6
8
10
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
with
20
V DS = -5V
4
-V GS , GATE TO SOURCE VOLTAGE (V)
-I S , REVERSE DRAIN CURRENT (A)
R DS(ON) , NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
I D = -4.0A
0.6
-50
0
20
0.3
1.6
20
16
Figure 2. On-Resistance Variation with
Drain Current and Gate
Voltage.
Figure 1. On-Region Characteristics.
1.4
12
-I D , DRAIN CURRENT (A)
VGS = 0V
5
1
TJ = 125°C
25°C
0.1
-55°C
0.01
0.001
0.0001
0
0.3
0.6
0.9
1.2
1.5
-VSD , BODY DIODE FORWARD VOLTAGE (V)
Figure 6 . Body Diode Forward Voltage
Variation with Source Current
and Temperature.
FDS8947A Rev.B
Typical Electrical Characteristics (continued)
2000
I D = -4.0A
VDS = -5V
-10V
-15V
8
1000
CAPACITANCE (pF)
-V GS , GATE-SOURCE VOLTAGE (V)
10
6
4
2
Ciss
500
Coss
300
200
0
0
5
10
15
20
50
0.1
Q g , GATE CHARGE (nC)
Crss
f = 1 MHz
V GS = 0 V
100
0.2
0.5
1
2
5
10
20
30
-VDS , DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics.
Figure 8. Capacitance Characteristics.
30
50
1m
s
1
0.5
0.05
0.01
0.1
-V GS = -10V
SINGLE PULSE
RθJA = 135°C/W
TAA = 25°C
0.2
0.5
SINGLE PULSE
R θJA =See Note 1C
TA = 25°C
25
10m
s
10
0m
s
1s
10s
DC
2
0.1
us
POWER (W)
5
100
T
IMI
)L
(ON
S
RD
20
15
10
5
1
2
5
10
20 30
0
0.01
50
0.1
Figure 9. Maximum Safe Operating Area.
1
0.5
0.2
0.1
0.05
0.02
1
10
50 100
300
Figure 10. Single Pulse Maximum Power
Dissipation.
D = 0.5
0.2
R θJA (t) = r(t) * R θJA
R θJA = 135°C/W
0.1
0.05
0.02
P(pk)
0.01
0.01
t1
Single Pulse
0.005
t2
TJ - TA = P * R θJA(t)
Duty Cycle, D = t1 /t2
0.002
0.001
0.0001
0.5
SINGLE PULSE TIME (sec)
-VDS , DRAIN-SOURCE VOLTAGE (V)
r(t), NORMALIZED EFFECTIVE
TRANSIENT THERMAL RESISTANCE
-I D , DRAIN CURRENT (A)
20
0.001
0.01
0.1
1
10
100
300
t1 , TIME (sec)
Figure 11. Transient Thermal Response Curve.
Note:
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
FDS8947A Rev.B
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DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
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1. Life support devices or systems are devices or
support device or system whose failure to perform can
systems which, (a) are intended for surgical implant into
be reasonably expected to cause the failure of the life
the body, or (b) support or sustain life, or (c) whose
support device or system, or to affect its safety or
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
effectiveness.
reasonably expected to result in significant injury to the
user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. I1
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