August 2002 AO3410 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO3410 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V and as high as 12V. This device is suitable for use as a load switch or in PWM applications. VDS (V) = 30V ID = 5.8 A RDS(ON) < 28mΩ (VGS = 10V) RDS(ON) < 33mΩ (VGS = 4.5V) RDS(ON) < 52mΩ (VGS = 2.5V) RDS(ON) < 70mΩ (VGS = 1.8V) TO-236 (SOT-23) Top View D G D S G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage TA=25°C Continuous Drain Current A Pulsed Drain Current ID IDM TA=70°C B Junction and Storage Temperature Range Alpha & Omega Semiconductor, Ltd. ±12 V 30 1.4 W 1 TJ, TSTG °C -55 to 150 Symbol t ≤ 10s Steady-State Steady-State A 4.9 PD TA=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C Units V 5.8 TA=25°C Power Dissipation A Maximum 30 RθJA RθJL Typ 65 85 43 Max 90 125 60 Units °C/W °C/W °C/W AO3410 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS Gate-Body leakage current Gate Threshold Voltage On state drain current VGS(th) ID(ON) Conditions Min ID=250µA, VGS=0V VDS=24V, VGS=0V 30 VDS=0V, VGS=±12V VDS=VGS ID=250µA VGS=4.5V, VDS=5V 0.5 gFS VSD IS VGS=4.5V, ID=5A VGS=2.5V, ID=4A VGS=1.8V, ID=3A Forward Transconductance VDS=5V, ID=5A Diode Forward Voltage IS=1A,VGS=0V Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance VGS=0V, VDS=15V, f=1MHz Crss Rg Reverse Transfer Capacitance Gate resistance VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time Qrr Body Diode Reverse Recovery Charge Units V µA 0.8 100 1 nA V 23 29 26 28 39 33 mΩ 35 54 42 72 mΩ mΩ 1 2.5 S V A 30 TJ=125°C Static Drain-Source On-Resistance Max 1 5 TJ=55°C VGS=10V, ID=5.8A RDS(ON) Typ 12 A 17 0.66 mΩ 767 pF 111 82 1.3 pF pF Ω 10 nC 1.2 3.1 5 5.5 39 4.7 nC nC ns ns ns ns IF=5A, dI/dt=100A/µs 15 IF=5A, dI/dt=100A/µs 7.1 ns nC VGS=4.5V, VDS=15V, ID=5.8A VGS=10V, VDS=15V, RL=2.7Ω, RGEN=6Ω A: The value of R θJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any a given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA curve provides a single pulse rating. Alpha & Omega Semiconductor, Ltd.