ON DTA114YXV3T1 Digital transistors (brt) Datasheet

DTA114EXV3T1 Series
Preferred Devices
Digital Transistors (BRT)
PNP Silicon Surface Mount Transistors
with Monolithic Bias Resistor Network
This new series of digital transistors is designed to replace a single
device and its external resistor bias network. The digital transistor
contains a single transistor with a monolithic bias network consisting
of two resistors; a series base resistor and a base−emitter resistor. The
digital transistor eliminates these individual components by
integrating them into a single device. The use of a digital transistor can
reduce both system cost and board space. The device is housed in the
SC−89 package which is designed for low power surface mount
applications.
•
•
•
•
•
Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
Available in 8 mm, 7 inch/3000 Unit Tape & Reel
Lead−Free Plating (Pure Sn)
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PNP SILICON
DIGITAL
TRANSISTORS
PIN 1
BASE
(INPUT)
PIN 3
COLLECTOR
(OUTPUT)
R1
R2
PIN 2
EMITTER
(GROUND)
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Collector-Base Voltage
VCBO
50
Vdc
Collector-Emitter Voltage
VCEO
50
Vdc
IC
100
mAdc
Collector Current
3
2
1
SC−89
CASE 463C
STYLE 1
MARKING DIAGRAM
3
xx D
1
2
xx = Specific Device Code
(See Marking Table on page 2)
D = Date Code
Preferred devices are recommended choices for future use
and best overall value.
 Semiconductor Components Industries, LLC, 2004
January, 2004 − Rev. 0
1
Publication Order Number:
DTA114EXV3T1/D
DTA114EXV3T1 Series
DEVICE MARKING AND RESISTOR VALUES
Device
Marking
R1 (K)
R2 (K)
Shipping†
DTA114EXV3T1
DTA124EXV3T1
DTA144EXV3T1
DTA114YXV3T1
DTA114TXV3T1
DTA143TXV3T1
DTA144WXV3T1
DTA144TXV3T1
DTA143XXV3T1
6A
6B
6C
6D
6E
6F
6P
6T
6R
10
22
47
10
10
4.7
47
47
4.7
10
22
47
47
∞
∞
22
∞
10
3000/Tape & Reel
†For information on tape and reel specifications, including part orientation and
tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure,
BRD8011/D.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Total Device Dissipation,
FR−4 Board (Note 1) @ TA = 25°C
Derate above 25°C
Max
Unit
200
1.6
mW
mW/°C
600
°C/W
300
2.4
mW
mW/°C
RθJA
400
°C/W
TJ, Tstg
−55 to +150
°C
PD
Thermal Resistance, Junction to Ambient (Note 1)
RθJA
Total Device Dissipation,
FR−4 Board (Note 2) @ TA = 25°C
Derate above 25°C
PD
Thermal Resistance, Junction to Ambient (Note 2)
Junction and Storage Temperature Range
1. FR−4 @ Minimum Pad.
2. FR−4 @ 1.0 × 1.0 Inch Pad.
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DTA114EXV3T1 Series
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Collector−Base Cutoff Current (VCB = 50 V, IE = 0)
ICBO
−
−
100
nAdc
Collector−Emitter Cutoff Current (VCE = 50 V, IB = 0)
ICEO
−
−
500
nAdc
Emitter−Base Cutoff Current
(VEB = 6.0 V, IC = 0)
IEBO
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
0.5
0.2
0.1
0.2
0.9
1.9
0.13
0.2
1.0
mAdc
Collector−Base Breakdown Voltage (IC = 10 µA, IE = 0)
V(BR)CBO
50
−
−
Vdc
Collector−Emitter Breakdown Voltage (Note 3)
(IC = 2.0 mA, IB = 0)
V(BR)CEO
50
−
−
Vdc
hFE
35
60
80
80
160
160
80
160
20
60
100
140
140
250
250
140
250
35
−
−
−
−
−
−
−
−
−
VCE(sat)
−
−
0.25
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
4.9
−
−
OFF CHARACTERISTICS
DTA114EXV3T1
DTA124EXV3T1
DTA144EXV3T1
DTA114YXV3T1
DTA114TXV3T1
DTA143TXV3T1
DTA144WXV3T1
DTA144TXV3T1
DTA143XXV3T1
ON CHARACTERISTICS (Note 3)
DC Current Gain
(VCE = 10 V, IC = 5.0 mA)
DTA114EXV3T1
DTA124EXV3T1
DTA144EXV3T1
DTA114YXV3T1
DTA114TXV3T1
DTA143TXV3T1
DTA144WXV3T1
DTA144TXV3T1
DTA143XXV3T1
Collector−Emitter Saturation Voltage (IC = 10 mA, IE = 0.3 mA)
(IC = 10 mA, IB = 5.0 mA) DTA123EXV3T1
(IC = 10 mA, IB = 1.0 mA) DTA114TXV3T1/ DTA143TXV3T1/
DTA143ZXV3T1/DTA124XXV3T1/DTA143EXV3T1
Output Voltage (on)
(VCC = 5.0 V, VB = 2.5 V, RL = 1.0 kΩ)
(VCC = 5.0 V, VB = 3.5 V, RL = 1.0 kΩ)
(VCC = 5.0 V, VB = 4.0 V, RL = 1.0 kΩ)
VOL
DTA114EXV3T1
DTA124EXV3T1
DTA114YXV3T1
DTA114TXV3T1
DTA143TXV3T1
DTA144EXV3T1
DTA144WXV3T1
DTA144TXV3T1
DTA143XXV3T1
Output Voltage (off) (VCC = 5.0 V, VB = 0.5 V, RL = 1.0 kΩ)
(VCC = 5.0 V, VB = 0.25 V, RL = 1.0 kΩ) DTA114TXV3T1
DTA143TXV3T1
VOH
3. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%.
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3
Vdc
Vdc
Vdc
DTA114EXV3T1 Series
ELECTRICAL CHARACTERISTICS (continued) (TA = 25°C unless otherwise noted)
Characteristic
Input Resistor
DTA114EXV3T1
DTA124EXV3T1
DTA144EXV3T1
DTA114YXV3T1
DTA114TXV3T1
DTA143TXV3T1
DTA144WXV3T1
DTA144TXV3T1
DTA143XXV3T1
Resistor Ratio
DTA114EXV3T1/DTA124EXV3T1/
DTA144EXV3T1
DTA114YXV3T1
DTA114TXV3T1/DTA143TXV3T1/
DTA144TXV3T1
DTA144WXV3T1
DTA143XXV3T1
Symbol
Min
Typ
Max
Unit
R1
7.0
15.4
32.9
7.0
7.0
3.3
32.9
32.9
3.3
10
22
47
10
10
4.7
47
47
4.7
13
28.6
61.1
13
13
6.1
61.1
61.1
6.1
kΩ
R1/R2
0.8
1.0
1.2
0.17
−
0.21
−
0.25
−
1.7
0.38
2.1
0.47
2.6
0.56
PD , POWER DISSIPATION (MILLIWATTS)
250
200
150
100
50
RθJA = 600°C/W
0
−50
0
50
100
TA, AMBIENT TEMPERATURE (°C)
150
r(t), NORMALIZED TRANSIENT THERMAL RESISTANCE
Figure 1. Derating Curve
1.0
0.1
D = 0.5
0.2
0.1
0.05
0.02
0.01
0.01
SINGLE PULSE
0.001
0.00001
0.0001
0.001
0.01
0.1
t, TIME (s)
1.0
Figure 2. Normalized Thermal Response
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10
100
1000
DTA114EXV3T1 Series
1000
1
IC/IB = 10
hFE , DC CURRENT GAIN (NORMALIZED)
VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS − DTA114EXV3T1
TA=−25°C
0.1
25°C
75°C
0.01
0
20
25°C
100
10
−25°C
10
IC, COLLECTOR CURRENT (mA)
Figure 3. VCE(sat) versus IC
Figure 4. DC Current Gain
50
1
100
3
IC, COLLECTOR CURRENT (mA)
f = 1 MHz
lE = 0 V
TA = 25°C
2
1
0
10
20
30
40
VR, REVERSE BIAS VOLTAGE (VOLTS)
TA=−25°C
10
1
0.1
0.01
0.001
50
100
VO = 5 V
0
1
2
6
7
3
4
5
Vin, INPUT VOLTAGE (VOLTS)
VO = 0.2 V
TA=−25°C
25°C
75°C
1
0
10
8
9
Figure 6. Output Current versus Input Voltage
10
0.1
100
25°C
75°C
Figure 5. Output Capacitance
V in , INPUT VOLTAGE (VOLTS)
Cob , CAPACITANCE (pF)
TA=75°C
IC, COLLECTOR CURRENT (mA)
40
4
0
VCE = 10 V
20
30
IC, COLLECTOR CURRENT (mA)
40
50
Figure 7. Input Voltage versus Output Current
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5
10
DTA114EXV3T1 Series
1000
10
hFE , DC CURRENT GAIN (NORMALIZED)
VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS − DTA124EXV3T1
IC/IB = 10
1
25°C
TA=−25°C
75°C
0.1
0.01
0
40
20
IC, COLLECTOR CURRENT (mA)
TA=75°C
10
1
Figure 9. DC Current Gain
100
IC, COLLECTOR CURRENT (mA)
3
2
1
10
20
30
40
VR, REVERSE BIAS VOLTAGE (VOLTS)
TA=−25°C
10
1
0.1
0.01
0.001
50
Figure 10. Output Capacitance
100
25°C
75°C
f = 1 MHz
lE = 0 V
TA = 25°C
V in , INPUT VOLTAGE (VOLTS)
Cob , CAPACITANCE (pF)
4
0
VO = 5 V
0
1
2
3
4
5
6
7
Vin, INPUT VOLTAGE (VOLTS)
VO = 0.2 V
10
25°C
75°C
1
0
10
8
9
Figure 11. Output Current versus Input Voltage
TA=−25°C
0.1
100
IC, COLLECTOR CURRENT (mA)
Figure 8. VCE(sat) versus IC
0
25°C
−25°C
100
10
50
VCE = 10 V
20
30
IC, COLLECTOR CURRENT (mA)
40
50
Figure 12. Input Voltage versus Output Current
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10
DTA114EXV3T1 Series
1
1000
IC/IB = 10
TA=−25°C
25°C
75°C
0.1
0.01
hFE , DC CURRENT GAIN (NORMALIZED)
VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS − DTA144EXV3T1
0
10
20
30
IC, COLLECTOR CURRENT (mA)
TA=75°C
25°C
−25°C
100
10
40
1
10
IC, COLLECTOR CURRENT (mA)
Figure 13. VCE(sat) versus IC
Figure 14. DC Current Gain
1
IC, COLLECTOR CURRENT (mA)
0.6
0.4
0.2
0
0
−25°C
1
0.1
0.01
Figure 15. Output Capacitance
VO = 5 V
1
0
2
3
4
5
6
7
Vin, INPUT VOLTAGE (VOLTS)
VO = 0.2 V
TA=−25°C
25°C
75°C
1
0.1
0
10
8
9
Figure 16. Output Current versus Input Voltage
100
10
25°C
TA=75°C
10
0.001
50
10
20
30
40
VR, REVERSE BIAS VOLTAGE (VOLTS)
V in , INPUT VOLTAGE (VOLTS)
Cob , CAPACITANCE (pF)
100
f = 1 MHz
lE = 0 V
TA = 25°C
0.8
100
20
30
IC, COLLECTOR CURRENT (mA)
40
50
Figure 17. Input Voltage versus Output Current
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10
DTA114EXV3T1 Series
1
180
IC/IB = 10
hFE , DC CURRENT GAIN (NORMALIZED)
VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS − DTA114YXV3T1
TA=−25°C
25°C
0.1
75°C
0.01
0.001
0
20
40
60
IC, COLLECTOR CURRENT (mA)
25°C
140
−25°C
120
100
80
60
40
20
0
80
TA=75°C
VCE = 10 V
160
2
1
4
6
Figure 18. VCE(sat) versus IC
100
TA=75°C
3.5
IC, COLLECTOR CURRENT (mA)
f = 1 MHz
lE = 0 V
TA = 25°C
4
3
2.5
2
1.5
1
0.5
0
2
4
6 8 10 15 20 25 30 35 40
VR, REVERSE BIAS VOLTAGE (VOLTS)
45
10
VO = 5 V
0
2
4
6
Vin, INPUT VOLTAGE (VOLTS)
VO = 0.2 V
25°C
TA=−25°C
75°C
1
0
10
8
10
Figure 21. Output Current versus Input Voltage
10
0.1
25°C
−25°C
1
50
Figure 20. Output Capacitance
V in , INPUT VOLTAGE (VOLTS)
Cob , CAPACITANCE (pF)
80 90 100
Figure 19. DC Current Gain
4.5
0
8 10 15 20 40 50 60 70
IC, COLLECTOR CURRENT (mA)
20
30
IC, COLLECTOR CURRENT (mA)
40
50
Figure 22. Input Voltage versus Output Current
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DTA114EXV3T1 Series
VCE(sat), MAXIMUM COLLECTOR
VOLTAGE (VOLTS)
1
TA = −25°C
75°C
0.1
25°C
IC/IB = 10
0.01
0
5
10 15
20 25 30 35 40
IC, COLLECTOR CURRENT (mA)
45
50
hFE, DC CURRENT GAIN (NORMALIZED)
TYPICAL ELECTRICAL CHARACTERISTICS — DTA144WXV3T1
1000
75°C
TA = −25°C
100
25°C
VCE = 10 V
10
1
10
IC, COLLECTOR CURRENT (mA)
Figure 23. Maximum Collector Voltage versus
Collector Current
Figure 24. DC Current Gain
100
1.4
Cob, CAPACITANCE (pF)
IC, COLLECTOR CURRENT (mA)
f = 1 MHz
IE = 0 V
TA = 25°C
1.2
1.0
0.8
0.6
0.4
0.2
0
75°C
10
20
30
40
50
VR, REVERSE BIAS VOLTAGE (VOLTS)
60
TA = −25°C
10
25°C
1
0.1
0.01
0.001
0
VO = 5 V
0
1
2
3
4
5
6
7
8
9
10
11
Vin, INPUT VOLTAGE (VOLTS)
Figure 25. Output Capacitance
Figure 26. Output Current versus Input Voltage
+12 V
100
Vin, INPUT VOLTAGE (VOLTS)
100
VO = 0.2 V
Typical Application
for PNP BRTs
TA = −25°C
10
75°C
LOAD
1
25°C
0
5
10
15
20
IC, COLLECTOR CURRENT (mA)
25
Figure 27. Input Voltage versus Output Current
Figure 28. Inexpensive, Unregulated Current Source
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DTA114EXV3T1 Series
PACKAGE DIMENSIONS
SC−89
CASE 463C−03
ISSUE C
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETERS
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD THICKNESS
IS THE MINIMUM THICKNESS OF BASE
MATERIAL.
4. 463C−01 OBSOLETE, NEW STANDARD 463C−02.
A
−X−
3
1
B −Y− S
2
K
DIM
A
B
C
D
G
H
J
K
L
M
N
S
G
2 PL
D
0.08 (0.003)
M
3 PL
X Y
N
M
C
J
−T−
SEATING
PLANE
MILLIMETERS
MIN
NOM MAX
1.50
1.60
1.70
0.75
0.85
0.95
0.60
0.70
0.80
0.23
0.28
0.33
0.50 BSC
0.53 REF
0.10
0.15
0.20
0.30
0.40
0.50
1.10 REF
−−−
−−−
10 _
−−−
−−−
10 _
1.50
1.60
1.70
INCHES
NOM MAX
0.063 0.067
0.034 0.040
0.028 0.031
0.011 0.013
0.020 BSC
0.021 REF
0.004 0.006 0.008
0.012 0.016 0.020
0.043 REF
−−−
−−−
10 _
−−−
−−−
10 _
0.059 0.063 0.067
MIN
0.059
0.030
0.024
0.009
STYLE 1:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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DTA114EXV3T1/D