IPLU250N04S4-1R7 OptiMOS™-T2 Power-Transistor Product Summary VDS 40 V RDS(on) 1.7 mW ID 250 A Features H-PSOF-8-1 • N-channel - Enhancement mode Tab • AEC qualified 8 • MSL1 up to 260°C peak reflow 1 • 175°C operating temperature • Green product (RoHS compliant); 100% lead free Tab 1 8 • Ultra low Rds(on) • 100% Avalanche tested Type Package Marking IPLU250N04S4-1R7 H-PSOF-8-1 4N041R7 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Continuous drain current ID Conditions Value T C=25°C, V GS=10V1) 250 T C=100°C, V GS=10V2) 180 Unit A Pulsed drain current2) I D,pulse T C=25 °C 1000 Avalanche energy, single pulse2) E AS I D=125 A 170 mJ Avalanche current, single pulse I AS - 250 A Gate source voltage V GS - ±20 V Power dissipation P tot T C=25 °C 188 W Operating and storage temperature T j, T stg - -55 ... +175 °C Rev. 1.0 page 1 2014-12-08 IPLU250N04S4-1R7 Parameter Symbol Values Conditions Unit min. typ. max. Thermal characteristics2) Thermal resistance, junction - case R thJC - - - 0.8 SMD version, device on PCB R thJA minimal footprint - - 62 6 cm2 cooling area3) - - 40 K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=1 mA 40 - - Gate threshold voltage V GS(th) V DS=V GS, I D=80 µA 2.0 3.0 4.0 Zero gate voltage drain current I DSS V DS=40 V, V GS=0 V, T j=25 °C - 0.1 10 T j=85 °C2) - 1 20 V DS=18 V, V GS=0 V, V µA Gate-source leakage current I GSS V GS=20 V, V DS=0 V - - 100 nA Drain-source on-state resistance RDS(on) V GS=10 V, I D=100 A - 1.2 1.7 mΩ Rev. 1.0 page 2 2014-12-08 IPLU250N04S4-1R7 Parameter Symbol Values Conditions Unit min. typ. max. - 6060 7900 - 1380 1800 Dynamic characteristics2) Input capacitance C iss Output capacitance C oss Reverse transfer capacitance Crss - 45 105 Turn-on delay time t d(on) - 18 - Rise time tr - 18 - Turn-off delay time t d(off) - 18 - Fall time tf - 25 - Gate to source charge Q gs - 34 45 Gate to drain charge Q gd - 11 25 Gate charge total Qg - 76 100 Gate plateau voltage V plateau - 5.7 - V - - 250 A - - 1000 - 0.9 1.3 V - 55 - ns - 60 - nC V GS=0 V, V DS=25 V, f =1 MHz V DD=20 V, V GS=10 V, I D=250 A, R G=3.5 W pF ns Gate Charge Characteristics2) V DD=32 V, I D=250 A, V GS=0 to 10 V nC Reverse Diode Diode continous forward current2) IS Diode pulse current2) I S,pulse Diode forward voltage V SD Reverse recovery time2) t rr Reverse recovery charge2) Q rr T C=25 °C V GS=0 V, I F=100 A, T j=25 °C V R=20 V, I F=50A, di F/dt =100 A/µs 1) Current is limited by bondwire; with an R thJC = 0.8 K/W the chip is able to carry 254A at 25°C. 2) Defined by design. Not subject to production test. 3) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. Rev. 1.0 page 3 2014-12-08 IPLU250N04S4-1R7 1 Power dissipation 2 Drain current P tot = f(T C); V GS = 10 V I D = f(T C); V GS = 10 V 200 300 250 150 ID [A] Ptot [W] 200 100 150 100 50 50 0 0 0 50 100 150 200 0 50 100 TC [°C] 150 200 TC [°C] 3 Safe operating area 4 Max. transient thermal impedance I D = f(V DS); T C = 25 °C; D = 0 Z thJC = f(t p) parameter: t p parameter: D =t p/T 10000 100 0.5 1000 1 µs 10 µs 0.1 10-1 0.05 ZthJC [K/W] ID [A] 100 µs 1 ms 100 0.01 10-2 single pulse 10 1 10-3 0.1 1 10 100 VDS [V] Rev. 1.0 10-6 10-5 10-4 10-3 10-2 10-1 100 tp [s] page 4 2014-12-08 IPLU250N04S4-1R7 5 Typ. output characteristics 6 Typ. drain-source on-state resistance I D = f(V DS); T j = 25 °C R DS(on) = (I D); T j = 25 °C parameter: V GS parameter: V GS 10 1000 5V 6.5 V 6V 10 V 7V 8 800 7V RDS(on) [mW] ID [A] 600 6.5 V 400 6 4 6V 2 200 10 V 5V 0 0 0 1 2 3 0 4 250 500 750 1000 ID [A] VDS [V] 7 Typ. transfer characteristics 8 Typ. drain-source on-state resistance I D = f(V GS); V DS = 6V R DS(on) = f(T j); I D = 100 A; V GS = 10 V parameter: T j 1000 2.2 -55 °C 2 25 °C 800 1.8 RDS(on) [mW] 175 °C ID [A] 600 400 1.6 1.4 1.2 200 1 0.8 0 2 4 6 8 -20 20 60 100 140 180 Tj [°C] VGS [V] Rev. 1.0 -60 page 5 2014-12-08 IPLU250N04S4-1R7 9 Typ. gate threshold voltage 10 Typ. capacitances V GS(th) = f(T j); V GS = V DS C = f(V DS); V GS = 0 V; f = 1 MHz parameter: I D 104 4 3.5 VGS(th) [V] C [pF] 800 µA 3 103 80 µA 2.5 102 2 1.5 101 1 -60 -20 20 60 100 140 0 180 5 10 15 20 25 30 VDS [V] Tj [°C] 11 Typical forward diode characteristicis 12 Avalanche characteristics IF = f(VSD) I AS = f(t AV) parameter: T j parameter: Tj(start) 1000 104 103 100 25 °C IAV [A] IF [A] 100 °C 102 175 °C 150 °C 25 °C 10 101 1 100 0 0.2 0.4 0.6 0.8 1 1.2 1.4 VSD [V] Rev. 1.0 1 10 100 1000 tAV [µs] page 6 2014-12-08 IPLU250N04S4-1R7 13 Avalanche energy 14 Drain-source breakdown voltage E AS = f(T j) V BR(DSS) = f(T j); I D_typ = 1 mA parameter: I D 44 400 43 62.5 A 300 VBR(DSS) [V] EAS [mJ] 42 200 125 A 41 40 100 250 A 39 38 0 25 75 125 -60 175 -20 20 Tj [°C] 60 100 140 180 Tj [°C] 15 Typ. gate charge 16 Gate charge waveforms V GS = f(Q gate); I D = 250 A pulsed parameter: V DD 12 V GS 10 Qg 8V 32 V VGS [V] 8 6 4 Q gate 2 Q gs Q gd 0 0 20 40 60 80 Qgate [nC] Rev. 1.0 page 7 2014-12-08 IPLU250N04S4-1R7 Published by Infineon Technologies AG 81726 Munich, Germany © Infineon Technologies AG 2014 All Rights Reserved. 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Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.0 page 8 2014-12-08 IPLU250N04S4-1R7 Revision History Version Date Changes Revision 1.0 Rev. 1.0 08.12.2014 Final Data Sheet page 9 2014-12-08