NGTG15N60S1EG IGBT - Short-Circuit Rated This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Non−Punch Through (NPT) Trench construction, and provides superior performance in demanding switching applications. Offering both low on state voltage and minimal switching loss, the IGBT is well suited for motor drive control and other hard switching applications. www.onsemi.com 15 A, 650 V VCEsat = 1.5 V Features • • • • • Low Saturation Voltage Resulting in Low Conduction Loss Low Switching Loss in Higher Frequency Applications 5 ms Short Circuit Capability Excellent Current versus Package Size Performance Density This is a Pb−Free Device C Typical Applications G • White Goods Appliance Motor Control • General Purpose Inverter • AC and DC Motor Control E ABSOLUTE MAXIMUM RATINGS Rating Collector−emitter voltage Collector current @ TC = 25°C @ TC = 100°C Symbol Value Unit VCES 650 V IC C A 30 15 Pulsed collector current, Tpulse limited by TJmax ICM 120 A Gate−emitter voltage VGE $20 Power dissipation @ TC = 25°C @ TC = 100°C PD Short circuit withstand time VGE = 15 V, VCE = 400 V, TJ v +150°C tSC 5 ms Operating junction temperature range TJ −55 to +150 °C Storage temperature range Tstg −55 to +150 °C Lead temperature for soldering, 1/8” from case for 5 seconds TSLD 260 °C V G C TO−220 CASE 221A STYLE 9 E MARKING DIAGRAM W 117 47 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. G15N60S1G AYWW A Y WW G = Assembly Location = Year = Work Week = Pb−Free Package ORDERING INFORMATION © Semiconductor Components Industries, LLC, 2015 December, 2015 − Rev. 5 1 Device Package Shipping NGTG15N60S1EG TO−220 (Pb−Free) 50 Units / Rail Publication Order Number: NGTG15N60S1E/D NGTG15N60S1EG THERMAL CHARACTERISTICS Symbol Value Unit Thermal resistance junction to case, for IGBT Rating RqJC 1.06 °C/W Thermal resistance junction to ambient RqJA 60 °C/W ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Test Conditions Symbol Min Typ Max Unit VGE = 0 V, IC = 500 mA V(BR)CES 650 − − V VGE = 15 V , IC = 15 A VGE = 15 V , IC = 15 A, TJ = 150°C VCEsat 1.3 1.55 1.5 1.75 1.7 1.95 V VGE = VCE , IC = 250 mA VGE(th) 4.5 5.5 6.5 V VGE = 0 V, VCE = 600 V VGE = 0 V, VCE = 600 V, TJ = 150°C ICES − − 10 − − 200 mA Gate leakage current, collector−emitter short−circuited VGE = 20 V, VCE = 0 V IGES − − 100 nA Forward Transconductance VCE = 20 V, IC = 15 A gfs − 10.1 − S Cies − 1950 − Coes − 70 − Cres − 48 − Qg − 88 − Qge − 16 − Qgc − 42 − td(on) − 65 − tr − 28 − td(off) − 170 − tf − 140 − Eon − 0.550 − Turn−off switching loss Eoff − 0.350 − Total switching loss Ets − 0.900 − Turn−on delay time td(on) − 65 − tr − 28 − td(off) − 180 − tf − 260 − STATIC CHARACTERISTIC Collector−emitter breakdown voltage, gate−emitter short−circuited Collector−emitter saturation voltage Gate−emitter threshold voltage Collector−emitter cut−off current, gate−emitter short−circuited DYNAMIC CHARACTERISTIC Input capacitance Output capacitance VCE = 20 V, VGE = 0 V, f = 1 MHz Reverse transfer capacitance Gate charge total Gate to emitter charge VCE = 480 V, IC = 15 A, VGE = 15 V Gate to collector charge pF nC SWITCHING CHARACTERISTIC , INDUCTIVE LOAD Turn−on delay time Rise time Turn−off delay time Fall time Turn−on switching loss TJ = 25°C VCC = 400 V, IC = 15 A Rg = 22 W VGE = 0 V / 15 V* Rise time Turn−off delay time Fall time Turn−on switching loss TJ = 150°C VCC = 400 V, IC = 15 A Rg = 22 W VGE = 0 V / 15 V* Eon − 0.650 − Turn−off switching loss Eoff − 0.600 − Total switching loss Ets − 1.250 − ns mJ ns mJ Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. *Includes diode reverse recovery loss using NGTB15N60S1EG. www.onsemi.com 2 NGTG15N60S1EG TYPICAL CHARACTERISTICS 60 60 VGE = 17 V to 13 V IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) TJ = 25°C VGE = 11 V 50 40 30 20 VGE = 9 V 10 VGE = 7 V 0 0 1 2 3 5 4 6 7 VGE = 11 V 40 30 VGE = 9 V 20 10 VGE = 7 V 8 0 1 2 3 5 4 6 7 VCE, COLLECTOR−EMITTER VOLTAGE (V) VCE, COLLECTOR−EMITTER VOLTAGE (V) Figure 1. Output Characteristics Figure 2. Output Characteristics 8 60 VGE = 17 V to 13 V 60 IC, COLLECTOR CURRENT (A) TJ = −40°C VGE = 11 V 50 40 30 20 VGE = 9 V 10 VGE = 7 V 0 0 1 2 3 4 5 TJ = 25°C 50 −40°C 150°C 40 30 20 10 0 7 6 0 8 2 4 6 8 10 12 14 VCE, COLLECTOR−EMITTER VOLTAGE (V) VGE, GATE−EMITTER VOLTAGE (V) Figure 3. Output Characteristics Figure 4. Typical Transfer Characteristics 3.0 10,000 IC = 30 A 2.5 2.0 Cies CAPACITANCE (pF) IC, COLLECTOR CURRENT (A) VGE = 17 V to 13 V 0 70 VCE, COLLECTOR−EMITTER VOLTAGE (V) TJ = 150°C 50 IC = 15 A IC = 10 A 1.5 IC = 5 A 1.0 1000 100 Coes 0.5 Cres 0 −50 10 −20 10 40 70 100 130 160 0 10 20 30 40 50 60 70 80 90 100 TJ, JUNCTION TEMPERATURE (°C) VCE, COLLECTOR−EMITTER VOLTAGE (V) Figure 5. VCE(sat) vs. TJ Figure 6. Typical Capacitance www.onsemi.com 3 NGTG15N60S1EG 20 0.7 15 VCES = 480 V 10 5 0.5 Eoff 0.4 0.3 VCE = 400 V VGE = 15 V IC = 15 A RG = 22 W 0.2 0.1 0 0 0 10 20 30 40 50 60 80 70 0 90 100 20 40 60 80 100 120 140 QG, GATE CHARGE (nC) TJ, JUNCTION TEMPERATURE (°C) Figure 7. Typical Gate Charge Figure 8. Switching Loss vs. Temperature 160 1.4 1000 SWITCHING LOSS (mJ) td(off) 100 td(on) tr 10 VCE = 400 V VGE = 15 V IC = 15 A RG = 22 W 1 0 20 40 VCE = 400 V VGE = 15 V TJ = 150°C RG = 22 W 1.2 tf SWITCHING TIME (ns) Eon 0.6 SWITCHING LOSS (mJ) VGE, GATE−TO−EMITTER VOLTAGE (V) TYPICAL CHARACTERISTICS 1.0 Eon Eoff 0.8 0.6 0.4 0.2 0 60 80 100 8 140 160 120 12 16 20 24 28 TJ, JUNCTION TEMPERATURE (°C) IC, COLLECTOR CURRENT (A) Figure 9. Switching Time vs. Temperature Figure 10. Switching Loss vs. IC 32 1.2 1000 Eon VCE = 400 V VGE = 15 V IC = 15 A TJ = 150°C SWITCHING LOSS (mJ) SWITCHING TIME (ns) tf td(off) 100 td(on) tr 10 VCE = 400 V VGE = 15 V TJ = 150°C RG = 22 W 1 8 12 16 20 24 28 0.9 Eoff 0.6 0.3 0 32 5 15 25 35 45 55 65 IC, COLLECTOR CURRENT (A) RG, GATE RESISTOR (W) Figure 11. Switching Time vs. IC Figure 12. Switching Time vs. RG www.onsemi.com 4 75 85 NGTG15N60S1EG TYPICAL CHARACTERISTICS 1.2 1000 VGE = 15 V IC = 15 A RG = 22 W TJ = 150°C SWITCHING LOSS (mJ) SWITCHING TIME (ns) tf td(off) 100 td(on) tr 10 VCE = 400 V VGE = 15 V IC = 15 A TJ = 150°C 1 5 15 25 35 45 55 65 75 Eoff 0.6 0.3 0 85 175 225 275 325 375 425 475 525 RG, GATE RESISTOR (W) VCE, COLLECTOR−EMITTER VOLTAGE (V) Figure 13. Switching Time vs. RG Figure 14. Switching Loss vs. VCE 575 1000 IC, COLLECTOR CURRENT (A) 1000 tf td_off 100 td_on tr 10 VGE = 15 V IC = 15 A RG = 22 W TJ = 150°C 1 ms 175 225 275 325 375 425 475 525 50 ms 10 dc operation 1 Single Nonrepetitive Pulse TC = 25°C Curves must be derated linearly with increase in temperature 0.1 1 575 100 ms 100 0.01 1 10 100 VCE, COLLECTOR−EMITTER VOLTAGE (V) VCE, COLLECTOR−EMITTER VOLTAGE (V) Figure 15. Switching Time vs. VCE Figure 16. Safe Operating Area 1000 IC, COLLECTOR CURRENT (A) SWITCHING TIME (ns) 0.9 Eon 100 10 1 0.1 VGE = 15 V, TC = 125°C 0.01 1 10 100 VCE, COLLECTOR−EMITTER VOLTAGE (V) 1000 Figure 17. Reverse Bias Safe Operating Area www.onsemi.com 5 1000 NGTG15N60S1EG TYPICAL CHARACTERISTICS THERMAL RESPONSE (ZqJC) 10 1 0.1 RqJC = 1.06 50% Duty Cycle Ri (°C/W) 20% 10% 5% Junction R1 C1 1% Single Pulse 0.001 0.000001 Rn C2 Cn Case Ci = ti/Ri 2% 0.01 R2 0.00001 ti (sec) 0.1 0.5010 0.15051 0.33992 0.10550 7.1E−5 1.0E−4 0.002 0.003 0.00999 0.20020 0.03 0.11423 0.1 Duty Factor = t1/t2 Peak TJ = PDM x ZqJC + TC 0.0001 0.001 0.01 0.1 1 PULSE TIME (sec) Figure 18. IGBT Transient Thermal Impedance Figure 19. Test Circuit for Switching Characteristics www.onsemi.com 6 10 100 1000 NGTG15N60S1EG Figure 20. Definition of Turn On Waveform www.onsemi.com 7 NGTG15N60S1EG Figure 21. Definition of Turn Off Waveform www.onsemi.com 8 NGTG15N60S1EG PACKAGE DIMENSIONS TO−220 CASE 221A−09 ISSUE AH −T− B SEATING PLANE C F T S 4 DIM A B C D F G H J K L N Q R S T U V Z A Q 1 2 3 U H K Z L R V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. J G D N INCHES MIN MAX 0.570 0.620 0.380 0.415 0.160 0.190 0.025 0.038 0.142 0.161 0.095 0.105 0.110 0.161 0.014 0.024 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 ----0.080 STYLE 9: PIN 1. 2. 3. 4. MILLIMETERS MIN MAX 14.48 15.75 9.66 10.53 4.07 4.83 0.64 0.96 3.61 4.09 2.42 2.66 2.80 4.10 0.36 0.61 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 ----2.04 GATE COLLECTOR EMITTER COLLECTOR ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). 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