BTA12 B/C BTB12 B/C STANDARD TRIACS .. . FEATURES HIGH SURGE CURRENT CAPABILITY COMMUTATION : (dV/dt)c > 5 V/µs BTA Family : INSULATING VOLTAGE = 2500V(RMS) (UL RECOGNIZED : E81734) DESCRIPTION A1 A2 The BTA/BTB12 B/C triac family are high performance glass passivated PNPN devices. These parts are suitables for general purpose applications where high surge current capability is required. Application such as phase control and static switching on inductive or resistive load. G TO220AB (Plastic) ABSOLUTE RATINGS (limiting values) Symbol IT(RMS) ITSM I2t dI/dt Tstg Tj Tl Symbol VDRM VRRM March 1995 Parameter Value Unit 12 A tp = 8.3 ms 125 A tp = 10 ms 120 I2t value tp = 10 ms 72 A2s Critical rate of rise of on-state current Gate supply : IG = 500mA diG/dt = 1A/µs Repetitive F = 50 Hz 10 A/µs Non Repetitive 50 RMS on-state current (360° conduction angle) BTA Tc = 90 °C BTB Tc = 95 °C Non repetitive surge peak on-state current ( Tj initial = 25°C ) Storage and operating junction temperature range - 40 to + 150 - 40 to + 125 °C °C 260 °C Maximum lead temperature for soldering during 10 s at 4.5 mm from case Parameter Repetitive peak off-state voltage Tj = 125 °C BTA / BTB12-... B/C Unit 400 600 700 800 400 600 700 800 V 1/5 BTA12 B/C / BTB12 B/C THERMAL RESISTANCES Symbol Rth (j-a) Parameter Value Unit 60 °C/W BTA 3.3 °C/W BTB 2.7 BTA 2.5 BTB 2.0 Junction to ambient Rth (j-c) DC Junction to case for DC Rth (j-c) AC Junction to case for 360° conduction angle ( F= 50 Hz) °C/W GATE CHARACTERISTICS (maximum values) PG (AV) = 1W PGM = 10W (tp = 20 µs) IGM = 4A (tp = 20 µs) VGM = 16V (tp = 20 µs). ELECTRICAL CHARACTERISTICS Symbol IGT Test Conditions VD=12V (DC) (DC) RL =33Ω RL =33Ω Quadrant Tj=25°C Suffix B C I-II-III MAX 50 25 IV MAX 100 50 mA Tj=25°C I-II-III-IV MAX 1.5 V VGT VD=12V VGD VD=VDRM R L=3.3kΩ Tj=110°C I-II-III-IV MIN 0.2 V tgt VD=VDRM IG = 500mA dIG/dt = 3A/µs Tj=25°C I-II-III-IV TYP 2 µs IL IG=1.2 IGT Tj=25°C I-III-IV TYP II 40 20 70 35 50 25 mA IH * IT= 500mA gate open Tj=25°C MAX VTM * ITM= 17A tp= 380µs Tj=25°C MAX 1.5 V IDRM IRRM VDRM VRRM Tj=25°C MAX 0.01 mA Tj=110°C MAX 0.5 Linear slope up to VD =67%VDRM gate open Tj=110°C MIN 250 100 V/µs (dI/dt)c = 5.3A/ms Tj=110°C MIN 10 5 V/µs dV/dt * (dV/dt)c * Rated Rated * For either polarity of electrode A2 voltage with reference to electrode A1. 2/5 Unit mA BTA12 B/C / BTB12 B/C ORDERING INFORMATION Package IT(RMS) VDRM / VRRM A V B C 12 400 X X 600 X X 700 X X 800 X X 400 X X 600 X X 700 X X 800 X X BTA (Insulated) BTB (Uninsulated) Fig.1 : Maximum RMS power dissipation versus RMS on-state current (F=50Hz). (Curves are cut off by (dI/dt)c limitation) Sensitivity Specification Fig.2 : Correlation between maximum RMS power dissipation and maximum allowable temperatures (Tamb and Tcase) for different thermal resistances heatsink + contact (BTA). 14 12 12 o = 120 10 = 90 = 60 6 = 30 1 2 o 3 4 5 6 7 8 9 10 11 12 Fig.3 : Correlation between maximum RMS power dissipation and maximum allowable temperatures (Tamb and Tcase) for different thermal resistances heatsink + contact (BTB). Tcase (o C) P (W) 16 Rth = 0 o C/W 2 o C/W 4 o C/W 6 o C/W 14 12 10 -100 8 -105 6 -110 4 -115 8 2 0 0 -95 -100 80 100 120 -125 140 BTB BTA 10 8 6 -115 4 -120 2 o 40 60 12 = 180 20 40 I T(RMS) (A) o o Tcase ( C) Tamb ( C) 0 0 20 Fig.4 : RMS on-state current versus case temperature. -110 6 4 -120 o Tamb ( C) 14 -105 2 -95 o I T(RMS) (A) 0 -90 10 o 2 0 Rth = 0 o C/W 2 o C/W 4 o C/W 6 o C/W 14 o = 180 8 -85 16 180 O 4 Tcase (o C) P (W) P(W) 16 60 80 100 120 -125 140 0 0 10 20 30 40 50 60 70 80 90 100 110 120 130 3/5 BTA12 B/C / BTB12 B/C Fig.5 : Relative variation of thermal impedance versus pulse duration. Fig.6 : Relative variation of gate trigger current and holding current versus junction temperature. Zth/Rth 1 Zt h( j-c) 0.1 Zt h(j-a) tp( s) 0.01 1E-3 1E-2 1E-1 1E +0 1 E +1 1 E +2 5 E +2 Fig.7 : Non Repetitive surge peak on-state current versus number of cycles. Fig.9 : On-state characteristics (maximum values). 4/5 Fig.8 : Non repetitive surge peak on-state current for a sinusoidal pulse with width : t ≤ 10ms, and corresponding value of I2t. BTA12 B/C / BTB12 B/C PACKAGE MECHANICAL DATA TO220AB Plastic REF. H A J G I D B F O P L C M = N = A B C D F G H I J L M N O P DIMENSIONS Millimeters Inches Min. Max. Min. Max. 10.20 10.50 0.401 0.413 14.23 15.87 0.560 0.625 12.70 14.70 0.500 0.579 5.85 6.85 0.230 0.270 4.50 0.178 2.54 3.00 0.100 0.119 4.48 4.82 0.176 0.190 3.55 4.00 0.140 0.158 1.15 1.39 0.045 0.055 0.35 0.65 0.013 0.026 2.10 2.70 0.082 0.107 4.58 5.58 0.18 0.22 0.80 1.20 0.031 0.048 0.64 0.96 0.025 0.038 Cooling method : C Marking : type number Weight : 2.3 g Recommended torque value : 0.8 m.N. Maximum torque value : 1 m.N. Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-T HOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectronics. 1995 SGS-THOMSON Microelectronics - Printed in Italy - All rights reserved. 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