MCH6605 Ordering number : EN6460C SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET MCH6605 General-Purpose Switching Device Applications Features • • • • Low ON-resistance Ultrahigh-speed switching 4V drive Composite type with 2 MOSFETs contained in a single package, facilitating high-density mounting Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Conditions Ratings Unit VDSS VGSS Gate-to-Source Voltage Drain Current (DC) --50 V ±20 V --0.14 A Allowable Power Dissipation ID IDP PD Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C Drain Current (Pulse) PW≤10μs, duty cycle≤1% --0.56 A 0.8 W When mounted on ceramic substrate (900mm2×0.8mm)1unit This product is designed to “ESD immunity < 200V*”, so please take care when handling. * Machine Model Product & Package Information unit : mm (typ) 7022A-006 • Package : MCPH6 • JEITA, JEDEC : SC-88, SC-70-6, SOT-363 • Minimum Packing Quantity : 3,000 pcs./reel 2.0 6 5 0.15 0 t o 0.02 1 2 0.3 0.85 FE TL 3 0.65 Marking LOT No. 0.25 Packing Type : TL LOT No. 0.07 MCH6605-TL-E 4 2.1 1.6 0.25 Package Dimensions Electrical Connection 1 2 3 1 : Source1 2 : Gate1 3 : Drain2 4 : Source2 5 : Gate2 6 : Drain1 6 5 4 SANYO : MCPH6 6 5 4 1 2 3 http://semicon.sanyo.com/en/network 71112 TKIM/42806 MSIM TB-00002286/O3105PE MSIM TB-00001863/N2499 TSIM TA-2460 No.6460-1/7 MCH6605 Electrical Characteristics at Ta=25°C Parameter Symbol Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Conditions Ratings min typ max V(BR)DSS IDSS ID=1mA, VGS=0V VDS=--50V, VGS=0V IGSS VGS(off) | yfs | VGS=±16V, VDS=0V VDS=--10V, ID=--100μA --1 VDS=--10V, ID=--40mA 50 RDS(on)1 ID=--40mA, VGS=--10V 17 22 RDS(on)2 ID=--20mA, VGS=--4V 23 32 Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Turn-ON Delay Time --50 Unit V --1 μA ±10 μA --2.5 70 V mS Ω Ω 6.2 pF 4.0 pF 1.3 pF td(on) 13 ns Rise Time tr 10 ns Turn-OFF Delay Time td(off) 100 ns Fall Time tf 150 ns Total Gate Charge Qg 1.32 nC Gate-to-Source Charge Qgs Gate-to-Drain “Miller” Charge Qgd Diode Forward Voltage VSD VDS=--10V, f=1MHz See specified Test Circuit. VDS=--10V, VGS=--10V, ID=--70mA IS=--70mA, VGS=0V 0.17 nC 0.34 nC --0.85 --1.2 V Switching Time Test Circuit VDD= --25V 0V --10V VIN ID= --40mA RL=625Ω PW=10μs D.C.≤1% D VIN VOUT G P.G 50Ω S MCH6605 Ordering Information Device MCH6605-TL-E Package Shipping memo MCPH6 3,000pcs./reel Pb Free No.6460-2/7 MCH6605 --0.12 --0.03 --0.02 Ta= -- Drain Current, ID -- A --3.0V --0.04 --0.10 25°C 25°C --6 .0V --8 .0V --0.05 VDS= --10V V .0 --4 --1 0.0 V Drain Current, ID -- A --0.06 ID -- VGS --0.14 75°C ID -- VDS --0.07 --0.08 --0.06 --0.04 VGS= --2.5V --0.02 --0.01 0 0 0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4 --1.6 Drain-to-Source Voltage, VDS -- V Static Drain-to-Source On-State Resistance, RDS(on) -- Ω 35 30 --40mA 25 ID= --20mA 20 15 --5 --6 --7 --8 --9 Gate-to-Source Voltage, VGS -- V 5 3 Ta=75°C 2 25°C --25°C 2 3 5 7 2 --0.1 Drain Current, ID -- A IT00105 3 IT00106 RDS(on) -- Ta 40 VGS= --4V 7 5 3 2 25°C 100 7 5 3 --6 IT00104 7 10 --0.01 --10 RDS(on) -- ID 1000 --5 VGS= --10V 40 --4 --4 RDS(on) -- ID 100 45 --3 --3 --2 Gate-to-Source Voltage, VGS -- V Ta=25°C 10 --2 --1 IT00103 Static Drain-to-Source On-State Resistance, RDS(on) -- Ω Static Drain-to-Source On-State Resistance, RDS(on) -- Ω 0 --2.0 RDS(on) -- VGS 50 Static Drain-to-Source On-State Resistance, RDS(on) -- Ω --1.8 Ta=75°C 2 35 -4V =S G ,V mA 10V -20 = -= S VG ID A, 40m I D= 30 25 20 15 10 5 --25°C 2 3 5 7 --0.1 Drain Current, ID -- A | yfs | -- ID 0 --60 3 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 3 2 IS -- VSD 75°C 3 5 3 2 2 2 3 5 7 --0.1 Drain Current, ID -- A 2 3 IT00109 --0.01 --0.5 --0.6 --0.7 C 25°C 7 --25° 5°C --0.1 25°C 0.1 5°C 2 5 160 VGS=0V 3 2 Ta= -- 140 IT00108 VDS= --10V 5 0.01 --0.01 --20 5 7 7 --40 IT00107 Source Current, IS -- A Forward Transfer Admittance, | yfs | -- S 1.0 2 Ta= 7 10 --0.01 --0.8 --0.9 --1.0 --1.1 Diode Forward Voltage, VSD -- V --1.2 IT00110 No.6460-3/7 MCH6605 SW Time -- ID tf 3 2 100 7 5 3 2 td(on) 10 7 5 tr 2 10 7 5 Ciss Coss 3 2 Crss 1.0 7 5 3 2 3 2 0.1 2 3 5 7 Drain Current, ID -- A 0 --0.1 IT00111 --15 --20 --25 --35 --30 --40 7 IDP= --0.56A 1m Drain Current, ID -- A --8 --6 --5 --4 --3 --50 IT00112 PW≤10μs 5 --7 --45 ASO --1.0 VDS= --10V ID= --70mA --9 --10 --5 Drain-to-Source Voltage, VDS -- V VGS -- Qg --10 Gate-to-Source Voltage, VGS -- V f=1MHz 3 td(off) 1.0 --0.01 s 3 2 10 ID= --0.14A DC --0.1 10 0m op ms s era 7 5 Operation in this area is limited by RDS(on). 3 tio n --2 2 --1 0 0 0.2 0.4 0.8 0.6 1.0 1.2 1.4 Total Gate Charge, Qg -- nC 1.6 IT00113 Ta=25°C Single pulse Mounted on a ceramic board (900mm2✕0.8mm) 1unit --0.01 --1.0 2 3 5 7 --10 2 3 Drain-to-Source Voltage, VDS -- V 5 7 IT01735 PD -- Ta 1.0 Allowable Power Dissipation, PD -- W Ciss, Coss, Crss -- VDS 100 7 5 VDD= --25V VGS= --10V Ciss, Coss, Crss -- pF Switching Time, SW Time -- ns 1000 7 5 M 0.8 ou nt ed on ac er 0.6 am ic bo ar d( 90 0.4 0m m2 ✕0 0.2 .8m m )1 un it 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT01736 No.6460-4/7 MCH6605 Taping Specification MCH6605-TL-E No.6460-5/7 MCH6605 Outline Drawing MCH6605-TL-E Land Pattern Example Mass (g) Unit 0.008 mm * For reference Unit: mm 2.1 0.6 0.4 0.65 0.65 No.6460-6/7 MCH6605 Note on usage : Since the MCH6605 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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