Kexin BAT854W Schottky barrier (double) diode Datasheet

Diodes
SMD Type
Schottky barrier (double) diodes
BAT854W;BAT854AW
BAT854CW;BAT854SW
Features
Very low forward voltage
Very low reverse current
Guard ring protected
Very small SMD package.
Absolute Maximum Ratings Ta = 25
Max
Unit
Continuous reverse voltage
Parameter
Symbol
VR
40
V
Continuous forward current
IF
200
mA
300
mA
1
A
Repetitive peak forward current
IFRM
Non-repetitive peak forward current
IFSM
Storage temperature
Tstg
Junction temperature
Tj
Operating ambient temperature
Tamb
Thermal resistance from junction to ambient
Rth j-a
Conditions
tp
1 s; d
Min
0.5
t = 8.3 ms half sinewave;JEDEC method
-65
+150
150
-65
+150
625
K/W
Electrical Characteristics Ta = 25
Parameter
Symbol
Forward voltage
VF
Conditions
Typ
IF = 0.1 mA
200
IF = 1 mA
260
IF = 10 mA
340
Max
Unit
mV
IF = 30 mA
420
IF = 100 mA
550
Continuous reverse current
IR
VR = 25 V; Note 1
0.5
A
Diode capacitance
Cd
f = 1 MHz; VR = 1 V
20
pF
Note
1. Pulse test: tp
300
s; ä
0.02.
Marking
Type
BTA854W
BAT854AW
BAT854CW
BAT854SW
Marking
81
82
83
84
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