Transistors SMD Type NPN Transistors MMBT3904DW (KMBT3904DW) ■ Features ● Epitaxial planar die construction ● Ideal for low power amplification and switching ● Dual NPN Transistors ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Collector - Base Voltage VCBO 60 Collector - Emitter Voltage VCEO 40 Emitter - Base Voltage VEBO 5 Unit V Collector Current - Continuous IC 200 mA Collector Power Dissipation PC 200 mW Junction Temperature TJ 150 Tstg -55 to 150 Storage Temperature range ℃ ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Collector- base breakdown voltage VCBO Ic= 100 μA， IE=0 60 Collector- emitter breakdown voltage VCEO Ic= 1 mA， IB=0 40 Emitter - base breakdown voltage VEBO IE= 100μA， IC=0 5 Typ Max V Collector-base cut-off current ICBO VCB= 60 V , IE=0 50 Collector- emittercut-off current ICEX VCE= 30 V , VEB(OFF)= -3V 50 Emitter cut-off current IEBO Collector-emitter saturation voltage VCE(sat) Base - emitter saturation voltage VBE(sat) DC current gain VEB= 5V , IC=0 50 IC=10 mA, IB=1mA 0.2 IC=50 mA, IB=5mA 0.3 IC=10 mA, IB=1mA IC=50 mA, IB=5mA hFE(1) VCE= 1V, IC= 0.1mA 40 VCE= 1V, IC= 10mA 100 hFE(3) VCE= 1V, IC= 50mA 60 td Rise time tr Storage time ts Fall time tf VCE=5V,Ic=0.1mA,f=1KHz,RS=1KΩ Collector output capacitance Cob VCB= 5V, IE= 0,f=1MHz,f=100MHz fT VCE= 20V, IC= 10mA,f=100MHz 300 35 200 VCC=3V, IC=10mA , IB1=-IB2=1mA NF V 35 VCC=3V, VBE= - 0.5V IC=10mA , IB1=-IB2=1mA Noise figure 0.85 nA 0.95 hFE(2) Delay time Transition frequency 0.65 Unit ns 50 5 4 300 dB pF MHz ■ Marking Marking K6N www.kexin.com.cn 1