DIODES FZT853TA

A Product Line of
Diodes Incorporated
Green
FZT853
100V NPN MEDIUM POWER TRANSISTOR IN SOT223
Features
Mechanical Data
•
BVCEO > 100V
•
•
IC = 6A high Continuous Collector Current
•
Case Material: Molded Plastic. “Green” Molding Compound.
•
ICM = 10A Peak Pulse Current
•
UL Flammability Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
•
Low Saturation Voltage VCE(sat) < 150mV @ 2A
•
•
RCE(sat) = 50mΩ for a Low Equivalent On-Resistance
•
•
hFE Specified Up to 10A for a High Gain Hold Up
Case: SOT223
Terminals: Finish - Matte Tin Plated Leads, Solderable per
MIL-STD-202, Method 208
•
Complementary PNP Type: FZT953
•
Lead-Free Finish; RoHS compliant (Notes 1 & 2)
•
•
Halogen and Antimony Free. “Green” Device (Note 3)
•
Qualified to AEC-Q101 Standards for High Reliability
SOT223
Weight: 0.112 grams (approximate)
C
B
E
Top View
Device Symbol
Top View
Pin-Out
Ordering Information (Note 4)
Product
FZT853TA
Notes:
Compliance
AEC-Q101
Marking
FZT853
Reel size (inches)
7
Tape width (mm)
12
Quantity per reel
1,000
1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com
Marking Information
FZT
651
853
FZT853
Document Number DS33175 Rev. 3 - 2
FZT853 = Product Type Marking Code
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FZT853
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Pulse Current
Symbol
VCBO
VCEO
VEBO
IC
ICM
Value
200
100
7
6
10
Unit
V
V
V
A
A
Value
3.0
24
1.6
12.8
42
78
8.84
-55 to +150
Unit
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Power Dissipation
Linear derating factor
Thermal Resistance, Junction to Ambient
Thermal Resistance Junction to Lead
Operating and Storage Temperature Range
Symbol
(Note 5)
(Note 6)
(Note 5)
(Note 6)
(Note 7)
PD
RθJA
RθJA
RθJL
TJ, TSTG
W
mW/°C
°C/W
°C
ESD Ratings (Note 8)
Characteristic
Electrostatic Discharge - Human Body Model
Electrostatic Discharge - Machine Model
Notes:
Symbol
ESD HBM
ESD MM
Value
≥ 8,000
≥ 400
Unit
V
V
JEDEC Class
3B
C
5. For a device surface mounted on 25mm X 25mm FR4 PCB with high coverage of single sided 1 oz copper, in still air conditions; device measured when
operating in steady state condition.
6. Same as note (5), except the device is mounted on 50mm X 50mm single sided 2oz weight copper.
7. Thermal resistance from junction to solder-point (at the end of the collector lead).
8. Refer to JEDEC specification JESD22-A114 and JESD22-A115.
FZT853
Document Number DS33175 Rev. 3 - 2
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FZT853
10
VCE(sat)
Max Power Dissipation (W)
IC Collector Current (A)
Thermal Characteristics and Derating Information
Limit
DC
1
1s
100ms
100m
10ms
Single Pulse Tamb=25°C
10m
100m
52mmX52mm
Single sided 2oz Cu
1
1ms
100µs
10
100
VCE Collector-Emitter Voltage (V)
3.0
2.5
52mmX52mm
Single sided 2oz Cu
2.0
1.5
1.0
0.5
0.0
0
25mmX25mm
Single sided 1oz Cu
20
D=0.5
20
Single Pulse
0
100µ
D=0.05
D=0.1
1m
10m 100m
1
Pulse Width (s)
10
100
1k
Max Power Dissipation (W)
Thermal Resistance (°C/W)
30
D=0.2
Document Number DS33175 Rev. 3 - 2
100 120 140 160
Single Pulse T amb=25°C
52mmX52mm
Single sided 2oz Cu
100
Transient Thermal Impedance
FZT853
80
Derating Curve
52mmX52mm
Single sided 2oz Cu
10
60
Temperature (°C)
Safe Operating Area
40
40
10
1
100µ
1m
10m 100m
1
10
100
1k
Pulse Width (s)
Pulse Power Dissipation
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Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 9)
Emitter-Base Breakdown Voltage
Symbol
BVCBO
BVCER
BVCEO
BVEBO
Min
200
200
100
7
Collector Cut-off Current
ICBO
−
−
Collector Cut-off Current
ICER
Emitter Cut-off Current
IEBO
DC Current Gain (Note 9)
hFE
Typ
300
300
120
8.1
<1
−
<1
−
<1
200
200
100
30
14
100
250
1050
900
Max
−
−
−
−
10
1
Unit
V
V
V
V
10
1
10
−
300
−
−
50
150
340
1250
1100
nA
µA
nA
nA
µA
Collector-Emitter Saturation Voltage (Note 9)
VCE(sat)
Base-Emitter Saturation Voltage (Note 9)
Base-Emitter Turn-On Voltage (Note 9)
VBE(sat)
VBE(on)
−
−
−
100
100
50
20
−
−
−
−
−
Current Gain-Bandwidth Product (Note 9)
fT
−
130
−
MHz
Cobo
ton
toff
−
−
−
35
50
1650
−
−
−
pF
Output Capacitance (Note 9)
Switching Times
Notes:
−
mV
mV
mV
ns
Test Condition
IC = 100µA
IC = 1µA, RB ≤ 1kΩ
IC = 1mA
IE = 100µA
VCB = 150V
VCB = 150V, TA = +100°C
VCB = 150V, RB ≤ 1kΩ
VCB = 150V, TA = +100°C
VEB = 6V
IC = 10mA, VCE = 2V
IC = 2A, VCE = 2V
IC = 4A, VCE = 2V
IC = 10A, VCE = 2V
IC = 100mA, IB = 5mA
IC = 2A, IB = 100mA
IC = 5A, IB = 500mA
IC = 5A, IB = 500mA
IC = 5A, VCE = 2V
IC = 100mA, VCE = 10V,
f = 50MHz
VCB = 10V, f = 1MHz
IC = 1A, VCC = 10V,
IB1 = -IB2 = 100mA
9. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%
FZT853
Document Number DS33175 Rev. 3 - 2
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Typical Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
0.5
Tamb=25°C
IC/IB=50
0.4
VCE(SAT) (V)
VCE(SAT) (V)
100m
IC/IB=100
10m
IC/IB=50
IC/IB=20
150°C
0.3
100°C
0.2
25°C
0.1
IC/IB=10
1m
1m
10m
-55°C
100m
1
IC Collector Current (A)
0.0
100m
10
VCE(SAT) v IC
Normalised Gain
1.2 150°C
1.0
240
200
100°C
0.8
280
160
25°C
0.6
120
-55°C
0.4
80
0.2
40
0.0
1m
0
10m
100m
1
10
1.0
-55°C
0.8
0.6
IC/IB=50
0.4
100m
IC Collector Current (A)
25°C
150°C
100°C
VBE(SAT) (V)
VCE=2V
10
VCE(SAT) v IC
Typical Gain (hFE)
1.4
1
IC Collector Current (A)
1
IC Collector Current (A)
10
VBE(SAT) v IC
hFE v IC
1.4
150°C
VBE(ON) (V)
1.2
1.0
100°C
-55°C
25°C
0.8
0.6
0.4
VCE=2V
0.2
1m
10m
100m
1
IC Collector Current (A)
10
VBE(ON) v IC
FZT853
Document Number DS33175 Rev. 3 - 2
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Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.
SOT223
Dim Min Max Typ
A
1.55 1.65 1.60
A1 0.010 0.15 0.05
b1
2.90 3.10 3.00
b2
0.60 0.80 0.70
C
0.20 0.30 0.25
D
6.45 6.55 6.50
E
3.45 3.55 3.50
E1
6.90 7.10 7.00
e
—
—
4.60
e1
—
—
2.30
L
0.85 1.05 0.95
Q
0.84 0.94 0.89
All Dimensions in mm
A
A1
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
X1
Y1
C1
Y2
X2
FZT853
Document Number DS33175 Rev. 3 - 2
Dimensions
X1
X2
Y1
Y2
C1
C2
Value (in mm)
3.3
1.2
1.6
1.6
6.4
2.3
C2
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IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2013, Diodes Incorporated
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FZT853
Document Number DS33175 Rev. 3 - 2
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