DSK BY500-400 Fast recovery rectifier Datasheet

Diode Semiconductor Korea
BY500-100(Z)---BY500-1000(Z)
VOLTAGE RANGE: 100 --- 1000 V
CURRENT: 5.0 A
FAST RECOVERY RECTIFIERS
FEATURES
Low cost
DO - 27
Diffused junction
Low leakage
Low forward voltage drop
High current capability
Easily cleaned with Freon,Alcohol,Isopropanol
and similar solvents
The plastic material carries U/L recognition 94V-0
MECHANICAL DATA
Case:JEDEC DO-27,molded plastic
Terminals: Axial lead ,solderable per
MIL- STD-202,Method 208
Polarity: Color band denotes cathode
Weight:0.041 ounces,1.15 grams
Mounting position: Any
Dimensions in millimeters
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
ambient temperature unless otherwise specified.
Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%.
BY500
-100
BY500
-200
BY500
-400
BY500
-600
BY500
-800
BY500
-1000
UNITS
Maximum recurrent peak reverse voltage
VRRM
100
200
400
600
800
1000
V
Maximum RMS voltage
VRMS
70
140
280
420
560
700
V
Maximum DC blocking voltage
VDC
100
200
400
600
800
1000
V
Maximum average forw ard rectified current
9.5mm lead length,
@TA=75
IF(AV)
5.0
A
IFSM
200.0
A
VF
1.3
V
Peak forw ard surge current
8.3ms single half-sine-w ave
superimposed on rated load
@TJ =125
Maximum instantaneous forw ard voltage
@ 5.0 A
Maximum reverse current
at rated DC blocking voltage
@TA=25
@TA=100
IR
10.0
1000.0
A
Maximum reverse recovery time (Note1)
t rr
200
ns
Typical junction capacitance
(Note2)
CJ
55
pF
Typical thermal resistance
(Note3)
Rθ JA
15
Operating junction temperature range
Storage temperature range
TJ
-55---- + 150
TSTG
- 55---- + 150
/W
NOTE: 1. Measured with I F =0.5A, I R=1A, I rr=0.25A.
2. Measured at 1.0MHz and applied rev erse v oltage of 4.0V DC.
3. Thermal resistance f rom junction to ambient.
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Diode Semiconductor Korea
BY500-100(Z)- - -BY500-1000(Z)
FIG.1 -- REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM
50
N.1.
trr
10
N.1.
+0.5A
D.U.T.
(+)
50VDC
(APPROX)
(-)
( - )
0
PULSE
GENERATOR
(NOTE2)
OSCILLOSCOPE
(NOTE 1)
1
N.1.
-0.25A
( + )
-1.0A
1cm
NOTES:1.RISE TIME=7ns MAX. INPUT IMPEDANCE=1M .22pF
2.RISE TIME=10ns MAX. SOURCEIMPEDANCE=5O
SET TIMEBASE FOR 50/100 ns /cm
FIG.3 --PEAK FORWARD SURGE CURRENT
8
7
6
5
4
3
2
S in g le P h a s e
H a lf W a v e 6 0 H
R e s is t iv e o r
In d u c tiv e L o a d
1
Z
0
0
25
50
75
100
125
150
175
PEAK FORWARD SURGE CURRENT
AMPERES
AVERAGE FORWARD CURRENT
AMPERES
FIG.2 --FORWARD DERATING CURVE
200
175
TJ=125
8.3ms Single Half
Sine-Wave
150
125
100
75
50
25
0
1
AMBIENT TEMPERATURE,
20
40 60 80 100
FIG.5-- TYPICAL JUNCTION CAPACITANCE
20
10
4
1
0.4
0.6
0.8
1.0 1.2
1.4
1.6
1.8
2.0
INSTANTANEOUS FORWARD VOLTAGE,VOLTS
JUNCTION CAPACITANCE,pF
INSTANTANEOUS FORWARD CURRENT
AMPERES
8 10
200
TJ=25
Pulse Width=300uS
40
0.1
4
NUMBER OF CYCLES AT 60 Hz
FIG.4--TYPICAL FORWARD CHARACTERISTIC
100
2
100
60
40
20
10
6
4
TJ=25
f=1MHz
2
1
0.1
0.2
0.4
1
2
4 10
20
40 100
REVERSE VOLTAGE,VOLTS
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