MBR40H35CT, MBR40H45CT, MBR40H50CT, MBR40H60CT www.vishay.com Vishay General Semiconductor Dual Common Cathode Schottky Rectifiers High Barrier Technology for Improved High Temperature Performance FEATURES • Power pack • Guardring for overvoltage protection TO-220AB • Lower power losses, high efficiency • Low forward voltage drop • Low leakage current • High forward surge capability • High frequency operation • Solder dip 275 °C max., 10 s, per JESD 22-B106 1 2 3 PIN 1 PIN 2 PIN 3 CASE • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in low voltage, high frequency rectifier of switching mode power supplies, freewheeling diodes, DC/DC converters, or polarity protection application. PRIMARY CHARACTERISTICS MECHANICAL DATA IF(AV) 2 x 20 A VRRM 35 V, 45 V, 50 V, 60 V IFSM 350 A, 320 A VF at IF = 20 A Case: TO-220AB Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS-compliant, commercial grade 0.55 V, 0.60 V IR Terminals: Matte tin plated leads, solderable J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker test 100 μA TJ max. 175 °C Package TO-220AB Diode variations Dual Common Cathode per Polarity: As marked Mounting Torque: 10 in-lbs maximum MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER Maximum repetitive peak reverse voltage Maximum average forward rectified current (fig. 1) total device per diode SYMBOL MBR40H35CT MBR40H45CT MBR40H50CT VRRM 35 45 50 MBR40H60CT UNIT 60 40 IF(AV) V A 20 Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load per diode IFSM Peak repetitive reverse surge current per diode at tp = 2 μs, 1 kHz IRRM 1.0 A Peak non-repetitive reverse surge energy (8/20 μs waveform) per diode ERSM 20 mJ EAS 22.5 mJ dV/dt 10 000 V/μs TJ, TSTG - 65 to + 175 °C Non-repetitive avalanche energy at 25 °C, IAS = 3.0 A, L = 5 mH per diode Voltage rate of change (rated VR) Operating junction and storage temperature range Revision: 13-Aug-13 350 320 A Document Number: 88920 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 MBR40H35CT, MBR40H45CT, MBR40H50CT, MBR40H60CT www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL Maximum instantaneous forward voltage per diode TEST CONDITIONS VF (1) TJ = 25 °C 0.64 IF = 20 A TJ = 125 °C 0.55 0.60 IF = 40 A TJ = 25 °C 0.76 0.83 TJ = 125 °C 0.70 IF = 40 A Maximum instantaneous reverse current per diode IR (2) Typical junction capacitance 0.68 V 0.73 TJ = 25 °C rated VR CJ MBR40H35CT MBR40H45CT MBR40H50CT MBR40H60CT UNIT IF = 20 A 100 TJ = 125°C μA 15 4.0 V, 1 MHz per diode mA 1200 920 pF Notes (1) Pulse test: 300 μs pulse width, 1 % duty cycle (2) Pulse test: Pulse width 40 ms THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL Thermal resistance, junction to case per diode MBR40H35CT MBR40H45CT RJC MBR40H50CT MBR40H60CT 1.8 UNIT °C/W ORDERING INFORMATION (Example) PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE TO-220AB MBR40H45CT-E3/45 1.58 45 50/tube Tube RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 400 Peak Forward Surge Current (A) Average Forward Current (A) 50 40 30 20 10 MBR40H35CT, MBR40H45CT MBR40H50CT, MBR40H60CT 350 300 250 200 150 100 MBR40H35CT, MBR40H45CT MBR40H50CT, MBR40H60CT 50 0 0 25 50 75 100 125 150 175 200 1 10 100 Case Temperature (°C) Number of Cycles at 60 Hz Fig. 1 - Forward Derating Curve Per Diode Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current Per Diode Revision: 13-Aug-13 Document Number: 88920 2 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 MBR40H35CT, MBR40H45CT, MBR40H50CT, MBR40H60CT www.vishay.com Vishay General Semiconductor 10 000 MBR40H35CT, MBR40H45CT MBR40H50CT, MBR40H60CT Junction Capacitance (pF) Instantaneous Forward Current (A) 100 TJ = 175 °C 10 TJ = 125 °C 1 TJ = 25 °C 0.1 1000 MBR40H35CT, MBR40H45CT MBR40H50CT, MBR40H60CT 100 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.1 0.9 1 10 100 Instantaneous Forward Voltage (V) Reverse Voltage (V) Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode Fig. 5 - Typical Junction Capacitance Per Diode 10 100 000 Transient Thermal Impedance (°C/W) Instantaneous Reverse Current (µA) 1 000 000 TJ = 175 °C 10 000 TJ = 125 °C 1000 100 MBR40H35CT, MBR40H45CT MBR40H50CT, MBR40H60CT 10 TJ = 25 °C 1 0.1 20 30 40 50 60 70 80 90 1 MBR40H35CT, MBR40H45CT MBR40H50CT, MBR40H60CT 0.1 0.01 100 0.1 1 10 100 Percent of Rated Peak Reverse Voltage (%) t - Pulse Duration (s) Fig. 4 - Typical Reverse Characteristics Per Diode Fig. 6 - Typical Transient Thermal Impedance Per Diode PACKAGE OUTLINE DIMENSIONS in inches (millimeters) TO-220AB 0.055 (1.40) 0.047 (1.20) 0.398 (10.10) 0.382 (9.70) 0.343 (8.70) TYP. 0.185 (4.70) 0.169 (4.30) 0.055 (1.40) 0.049 (1.25) 0.150 (3.80) 0.139 (3.54) DIA. 0.114 (2.90) 0.106 (2.70) 0.154 (3.90) 0.138 (3.50) 0.067 (1.70) TYP. 0.331(8.40) TYP. 0.634 (16.10) 0.618 (15.70) PIN 1 2 3 0.118 (3.00) TYP. 0.638 (16.20) 0.598 (15.20) 0.370 (9.40) 0.354 (9.00) 1.161 (29.48) 1.106 (28.08) 0.523 (13.28) 0.507 (12.88) 0.102 (2.60) 0.087 (2.20) 0.035 (0.90) 0.028 (0.70) 0.100 (2.54) TYP. Revision: 13-Aug-13 0.064 (1.62) 0.056 (1.42) 0.200 (5.08) TYP. 0.024 (0.60) 0.018 (0.45) Document Number: 88920 3 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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