BYT28-x00, BYT28F-x00, BYT28B-x00, UG10xCT, UGF10xCT, UGB10xCT www.vishay.com Vishay General Semiconductor Dual Common Cathode Ultrafast Soft Recovery Rectifier FEATURES ITO-220AB TO-220AB • Power pack • Glass passivated pellet chip junction • Ultrafast recovery time • Low switching losses, high efficiency • Low forward voltage drop 2 PIN 2 PIN 3 CASE 1 1 BYT28, UG10 Series PIN 1 3 2 3 BYT28F, UGF10 Series PIN 1 PIN 2 • AEC-Q101 qualified • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 2 TYPICAL APPLICATIONS 1 BYT28B, UGB10 Series PIN 2 • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder dip 275 °C max. 10 s, per JESD 22-B106 (for TO-220AB and ITO-220AB package) PIN 3 TO-263AB K PIN 1 • High forward surge capability For use in high frequency rectifier of switching mode power supplies, inverters, freewheeling diodes, DC/DC converters, and other power switching application. K HEATSINK MECHANICAL DATA PRIMARY CHARACTERISTICS IF(AV) 2 x 5.0 A VRRM 300 V to 400 V IFSM 60 A trr 35 ns VF at IF 1.05 V TJ max. 150 °C Package TO-220AB, ITO-220AB, TO-263AB Diode variations Common cathode Case: TO-220AB, ITO-220AB, TO-263AB Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS-compliant, commercial grade Base P/NHE3 - RoHS-compliant, AEC-Q101 qualified Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix meets JESD 201 class 2 whisker test Polarity: As marked Mounting Torque: 10 in-lbs maximum MAXIMUM RATINGS (TC = 25 °C unless otherwise noted) PARAMETER SYMBOL BYT28-300 UG10FCT BYT28-400 UG10GCT UNIT Maximum repetitive peak reverse voltage VRRM 300 400 V Maximum working reverse voltage VRWM 300 400 V Maximum RMS voltage VRMS 210 280 V Maximum DC blocking voltage VDC 300 400 V Maximum average forward rectified current at TC = 100 °C total device per diode Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load per diode Operating junction and storage temperature range Isolation voltage (ITO-220AB only) from terminal to heatsink t = 1 min IF(AV) 10 5.0 A IFSM 60 A TJ, TSTG -40 to +150 °C VAC 1500 V Revision: 23-Feb-16 Document Number: 88552 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 BYT28-x00, BYT28F-x00, BYT28B-x00, UG10xCT, UGF10xCT, UGB10xCT www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TC = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS IF = 5 A Maximum instantaneous forward voltage per diode VALUE VF (1) V 1.40 TJ = 150 °C 1.05 TJ = 25 °C Maximum reverse current per diode at VRRM UNIT 1.30 TJ = 25 °C IF = 10 A IF = 5 A Maximum reverse recovery time per diode SYMBOL 10 IR TJ = 100 °C μA 200 IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A 35 trr IF = 1.0 A, dI/dt = 100 A/μs, VR = 30 V, Irr = 0.1 IRM ns 50 Maximum reverse recovery current per diode IF = 5 A, dI/dt = 50 A/μs, VR = 30 V, TC = 100 °C IRM 3.0 A Maximum stored charge per diode IF = 2 A, dI/dt = 20 A/μs, VR = 30 V, Irr = 0.1 IRM Qrr 50 nC Note (1) Pulse test: 300 μs pulse width, 1 % duty cycle THERMAL CHARACTERISTICS (TC = 25 °C unless otherwise noted) PARAMETER Typical thermal resistance junction to case per diode SYMBOL BYT28 UG10 BYT28F UGF10 BYT28B UGB10 UNIT RJC 4.5 6.7 4.5 °C/W ORDERING INFORMATION (Example) PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE TO-220AB BYT28-400-E3/45 1.80 45 50/tube Tube ITO-220AB BYT28F-400-E3/45 1.95 45 50/tube Tube TO-263AB BYT28B-400-E3/45 1.77 45 50/tube Tube TO-263AB BYT28B-400-E3/81 1.77 81 800/reel Tape and reel TO-220AB BYT28-400HE3/45 (1) 1.80 45 50/tube Tube ITO-220AB BYT28F-400HE3/45 (1) 1.95 45 50/tube Tube TO-263AB BYT28B-400HE3/45 (1) 1.77 45 50/tube Tube TO-263AB (1) 1.77 81 800/reel Tape and reel BYT28B-400HE3/81 Note (1) AEC-Q101 qualified Revision: 23-Feb-16 Document Number: 88552 2 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 BYT28-x00, BYT28F-x00, BYT28B-x00, UG10xCT, UGF10xCT, UGB10xCT www.vishay.com Vishay General Semiconductor RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 15 Instantaneous Reverse Current (μA) 1000 Average Forward Current (A) Resistive or Inductive Load 10 5 TJ = 100 °C 100 10 1.0 TJ = 25 °C 0.1 0 0 100 50 20 150 40 60 80 100 Case Temperature (°C) Percent of Rated Peak Reverse Voltage (%) Fig. 1 - Forward Current Derating Curve Fig. 4 - Typical Reverse Characteristics Per Diode Stored Charge/Reverse Recovery Time (nC/ns) 100 Peak Forward Surge Current (A) TJ = 125 °C TC = 105 °C 8.3 ms Single Half Sine-Wave 10 1 120 100 at 5 A, 50 A/μs 80 at 2 A, 20 A/μs 60 at 5 A, 50 A/μs at 1 A, 100 A/μs 40 20 at 2 A, 20 A/μs trr Qrr 0 1 25 100 10 75 50 100 125 Number of Cycles at 60 Hz Junction Temperature (°C) Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current Per Diode Fig. 5 - Reverse Switching Characteristics Per Diode 100 Pulse Width = 300 μs 1 % Duty Cycle Junction Capacitance (pF) Instantaneous Forward Current (A) 100 10 1.0 0.1 0.01 0.2 TJ = 100 °C TJ = 125 °C TJ = 25 °C 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p 10 1 0.1 1 10 100 Instantaneous Forward Voltage (V) Reverse Voltage (V) Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode Fig. 6 - Typical Junction Capacitance Per Diode Revision: 23-Feb-16 Document Number: 88552 3 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 BYT28-x00, BYT28F-x00, BYT28B-x00, UG10xCT, UGF10xCT, UGB10xCT www.vishay.com Vishay General Semiconductor PACKAGE OUTLINE DIMENSIONS in inches (millimeters) TO-220AB 0.404 (10.26) 0.384 (9.75) 0.415 (10.54) MAX. ITO-220AB 0.190 (4.83) 0.170 (4.32) 0.110 (2.79) 0.100 (2.54) 0.076 (1.93) REF. 0.370 (9.40) 0.360 (9.14) 0.185 (4.70) 0.175 (4.44) 0.154 (3.91) 0.148 (3.74) 0.055 (1.39) 0.045 (1.14) 0.113 (2.87) 0.103 (2.62) 1 PIN 2 0.635 (16.13) 0.625 (15.87) 3 0.160 (4.06) 0.140 (3.56) 0.104 (2.65) 0.096 (2.45) 0.671 (17.04) 0.651 (16.54) PIN 0.350 (8.89) 0.330 (8.38) 1.148 (29.16) 1.118 (28.40) 1 0.110 (2.79) 0.100 (2.54) 0.035 (0.89) 0.025 (0.64) Mounting Pad Layout 0.42 (10.66) MIN. 0.055 (1.40) 0.045 (1.14) 0.33 (8.38) MIN. 0.360 (9.14) 0.320 (8.13) K 2 0.624 (15.85) 0.591 (15.00) 0.055 (1.40) 0.047 (1.19) 0.670 (17.02) 0.591 (15.00) 0 to 0.01 (0 to 0.254) 0.110 (2.79) 0.090 (2.29) 0.021 (0.53) 0.014 (0.36) 0.037 (0.940) 0.027 (0.686) 0.105 (2.67) 0.095 (2.41) 0.028 (0.71) 0.020 (0.51) 0.205 (5.21) 0.195 (4.95) K 1 0.110 (2.79) 0.100 (2.54) 0.057 (1.45) 0.045 (1.14) 0.025 (0.64) 0.015 (0.38) 0.105 (2.67) 0.095 (2.41) TO-263AB 0.190 (4.83) 0.160 (4.06) 0.191 (4.85) 0.171 (4.35) 0.057 (1.45) 0.045 (1.14) 0.022 (0.56) 0.014 (0.36) 0.245 (6.22) MIN. 3 0.560 (14.22) 0.530 (13.46) 0.035 (0.90) 0.028 (0.70) 0.411 (10.45) 0.380 (9.65) 7° REF. 7° REF. 0.560 (14.22) 0.530 (13.46) 0.205 (5.20) 0.195 (4.95) 2 0.135 (3.43) DIA. 0.122 (3.08) DIA. 0.350 (8.89) 0.330 (8.38) 0.603 (15.32) 0.573 (14.55) 0.057 (1.45) 0.045 (1.14) 0.105 (2.67) 0.095 (2.41) 0.140 (3.56) DIA. 0.125 (3.17) DIA. 0.600 (15.24) 0.580 (14.73) 0.145 (3.68) 0.135 (3.43) 7° REF. 0.076 (1.93) REF. 45° REF. 0.205 (5.20) 0.195 (4.95) 0.140 (3.56) 0.110 (2.79) 0.15 (3.81) MIN. 0.08 (2.032) MIN. 0.105 (2.67) 0.095 (2.41) Revision: 23-Feb-16 Document Number: 88552 4 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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