CEG8205A Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES 20V, 6A, RDS(ON) = 21mΩ (typ) @VGS = 4.5V. RDS(ON) = 30mΩ (typ) @VGS = 2.5V. Super High dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TSSOP-8 for Surface Mount Package. G2 S2 S2 D D 1 8 D S1 2 7 S2 S1 3 6 S2 G1 4 5 G2 G1 S1 S1 D TSSOP-8 ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Symbol Limit Drain-Source Voltage VDS 20 Units V Gate-Source Voltage VGS ±12 V ID 6 A IDM 25 A PD 1.5 W TJ,Tstg -55 to 150 C Symbol Limit Units RθJA 83 C/W Parameter Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation Operating and Store Temperature Range Thermal Characteristics Parameter Thermal Resistance, Junction-to-Ambient b Rev 1. 2005.November http://www.cetsemi.com 8 - 18 CEG8205A Electrical Characteristics Parameter TA = 25 C unless otherwise noted Symbol Test Condition Min Drain-Source Breakdown Voltage BVDSS VGS = 0V, ID = 250µA 20 Zero Gate Voltage Drain Current IDSS Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse Typ Max Units VDS = 18V, VGS = 0V 1 µA IGSSF VGS = 12V, VDS = 0V 100 nA IGSSR VGS = -12V, VDS = 0V -100 nA Off Characteristics V On Characteristics c Gate Threshold Voltage VGS(th) Static Drain-Source RDS(on) On-Resistance Forward Transconductance Dynamic Characteristics gFS VGS = VDS, ID = 250µA 1.2 V VGS = 4.5V, ID = 4.5A 0.5 21 27.5 mΩ VGS = 2.5V, ID = 3.5A 30 37.5 mΩ VDS = 5V, ID = 4.5A 10 S 600 pF 330 pF 140 pF 8 d Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss VDS = 8V, VGS = 0V, f = 1.0 MHz Switching Characteristics d Turn-On Delay Time td(on) Turn-On Rise Time tr Turn-Off Delay Time td(off) VDD = 10V, ID = 1A, VGS = 4.5V, RGEN = 6Ω 10 20 ns 11 25 ns 35 70 ns Turn-Off Fall Time tf 30 60 ns Total Gate Charge Qg 10 15 nC Gate-Source Charge Qgs Gate-Drain Charge Qgd VDS = 10V, ID = 6A, VGS = 4.5V 2.3 nC 2.9 nC Drain-Source Diode Characteristics and Maximun Ratings Drain-Source Diode Forward Current b IS Drain-Source Diode Forward Voltage c VSD VGS = 0V, IS = 1.7A Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature. b.Surface Mounted on FR4 Board, t < 10 sec. c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%. d.Guaranteed by design, not subject to production testing. 8 - 19 1.7 A 1.2 V CEG8205A 10 30 25 C VGS=2.0V 8 ID, Drain Current (A) ID, Drain Current (A) VGS=4.5,3.5,2.5V 6 4 2 24 18 12 6 VGS=1.5V TJ=125 C 0 0 0 1 2 3 0 RDS(ON), Normalized RDS(ON), On-Resistance(Ohms) C, Capacitance (pF) 3 Figure 2. Transfer Characteristics 600 450 Coss 300 Crss 150 0 0 2 4 6 8 10 1.8 1.6 ID=4.5A VGS=4.5V 1.4 1.2 1.0 0.8 0.6 -100 -50 0 50 100 150 200 VDS, Drain-to-Source Voltage (V) TJ, Junction Temperature( C) Figure 3. Capacitance Figure 4. On-Resistance Variation with Temperature VDS=VGS IS, Source-drain current (A) VTH, Normalized Gate-Source Threshold Voltage 2.0 Figure 1. Output Characteristics Ciss ID=250µA 1.1 1.0 0.9 0.8 0.7 0.6 -50 2 VGS, Gate-to-Source Voltage (V) 750 1.2 1 VDS, Drain-to-Source Voltage (V) 900 1.3 -55 C VGS=0V 10 10 10 -25 0 25 50 75 100 125 150 1 0 -1 0.4 0.6 0.8 1.0 1.2 1.4 TJ, Junction Temperature( C) VSD, Body Diode Forward Voltage (V) Figure 5. Gate Threshold Variation with Temperature Figure 6. Body Diode Forward Voltage Variation with Source Current 8 - 20 5 V =10V DS ID=4.5A 10 4 ID, Drain Current (A) VGS, Gate to Source Voltage (V) CEG8205A 3 2 1 0 0 3 6 9 RDS(ON)Limit 10 10 10 10 12 2 1ms 10ms 100ms 1s DC 1 0 -1 TA=25 C TJ=150 C Single Pulse -2 10 -2 10 -1 10 0 10 1 10 Qg, Total Gate Charge (nC) VDS, Drain-Source Voltage (V) Figure 7. Gate Charge Figure 8. Maximum Safe Operating Area 8 VDD t on RL V IN D td(off) tf 90% 90% VOUT VOUT VGS RGEN toff tr td(on) 10% INVERTED 10% G 90% S VIN 50% 50% 10% PULSE WIDTH Figure 10. Switching Waveforms Figure 9. Switching Test Circuit r(t),Normalized Effective Transient Thermal Impedance 10 0 D=0.5 0.2 10 -1 0.1 0.05 10 PDM 0.02 0.01 -2 t1 t2 1. RθJA (t)=r (t) * RθJA 2. RθJA=See Datasheet 3. TJM-TA = P* RθJA (t) 4. Duty Cycle, D=t1/t2 Single Pulse 10 -3 10 -4 10 -3 10 -2 10 -1 10 0 Square Wave Pulse Duration (sec) Figure 11. Normalized Thermal Transient Impedance Curve 8 - 21 10 1 10 2 2