MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFS45V2735 2.7 - 3.5GHz BAND 30W INTERNALLY MATCHED GaAs FET O U TLIN E FEATURES 2M IN DESCRIPTION The MGFS45V2735 is an internally impedance-matched GaAs power FET especially designed for use in 2.7 - 3.5 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability. u nit : m m 2 4 + /- 0 .3 Class A operation Internally matched to 50(ohm) system High output power P1dB = 30W (TYP.) @ f=2.7 - 3.5 GHz High power gain GLP = 12 dB (TYP.) @ f=2.7 - 3.5GHz High power added efficiency P.A.E. = 36 % (TYP.) @ f=2.7 - 3.5GHz Low distortion [item -51] IM3=-45dBc(TYP.) @Po=34.5dBm S.C.L. (1 ) 0 .6 + /- 0 .1 5 8.0 +/- 0.2 17.4 +/- 0.2 R 1 .2 2M IN (2 ) (3 ) APPLICATION 2 0 .4 + /- 0 .2 4.3 +/- 0.4 1 6 .7 QUALITY GRADE IG 1.4 RECOMMENDED BIAS CONDITIONS VDS = 10 (V) ID = 8 (A) RG=25 (ohm) (1 ) ga te (2 ) sou rce (fla ng e ) (3 )dra in G F-38 ABSOLUTE MAXIMUM RATINGS 2.4 +/- 0.2 item 51 : 2.7 - 3.5 GHz band digital radio communication 0.1 +/- 0.05 item 01 : 2.7 - 3.5 GHz band power amplifier (Ta=25deg.C) < Keep safety first in your circuit designs! > Mitsubishi Electric Corporation puts the maximum effort into Symbol Parameter Ratings Unit VGDO Gate to drain voltage -15 V but there is always the possibility that trouble may occur VGSO Gate to source voltage -15 V with them. Trouble with semiconductors may lead to personal Drain current 20 A injury, fire or property damage. Remember to give due IGR Reverse gate current -80 mA consideration to safety when making your circuit designs, IGF Forward gate current 168 mA with appropriate measures such as (1)placement of Total power dissipation 150 W substitutive, auxiliary circuits, (2)use of non-flammable Tch Channel temperature 175 deg.C Tstg Storage temperature -65 / +175 deg.C ID PT *1 making semiconductor products better and more reliable, material or (3)prevention against any malfunction or mishap. *1 : Tc=25deg.C ELECTRICAL CHARACTERISTICS Symbol IDSS gm VGS(off) P1dB GLP Parameter (Ta=25deg.C) Min. - Limits Typ. 24 Max. - A Test conditions Unit Saturated drain current VDS = 3V , VGS = 0V Transconductance VDS = 3V , ID = 8A - 8 - S Saturated drain current Output power at 1dB gain compression Linear power gain VDS = 3V , ID = 160mA -2 - -5 V 44 45 - dBm dB 11 12 - Drain current - 8 - A P.A.E. Power added efficiency - 36 - % IM3 *2 3rd order IM distortion -42 -45 - dBc - 0.8 1 deg.C/W ID Rth(ch-c) *3 Thermal resistance VDS=10V, ID(RF off)=8A, f=2.7 - 3.5GHz delta Vf method *2 : item -51,2 tone test,Po=34.5dBm Single Carrier Level,f=2.7,3.1,3.5GHz,delta f=10MHz *3 : Channel-case MITSUBISHI ELECTRIC June-'04 MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFS45V2735 2.7 - 3.5GHz BAND 30W INTERNALLY MATCHED GaAs FET TYPICAL CHARACTERISTICS P1dB,GLP vs. f Po,P.A.E. vs. Pin P1dB 20 18 45 44 16 43 14 GLP 42 12 41 45 10 2.6 2.7 2.8 2.9 3.0 3.1 3.2 3.3 FREQUENCY f (GHz) 3.4 3.5 OUTPUT POWER Po (dBm) 46 100 111 VDS=10V ID=8A f=3.1GHz LINEAR POWER GAIN GLP (dB) VDS=10V ID=8A OUTPUT POWER P1dB (dBm) 50 22 80 Po 40 60 35 40 P.A.E. 30 20 25 3.6 0 15 20 25 30 INPUT POWER Pin (dBm) 35 POWER ADDED EFFICIENCY P.A.E. (%) 47 40 Po,IM3 vs. Pin 42 20 VDS=10V IDS=8A f=3.5GHz Delta f=10MHz 2-tone test 38 10 Po 0 36 -10 34 -20 IM3 32 -30 30 -40 28 -50 IM3 (dBc) OUTPUT POWER Po (dBm) S.C.L. 40 -60 26 18 20 22 24 26 28 INPUT POWER Pin (dBm) S.C.L. S parameters f (GHz) 2.60 2.70 2.80 2.90 3.00 3.10 3.20 3.30 3.40 3.50 3.60 30 ( Ta=25deg.C , VDS=10(V),IDS=8(A) ) S11 Magn. Angle(deg) 0.63 88 0.58 47 0.51 1 0.47 -51 0.47 -105 0.50 -152 0.51 166 0.49 123 0.45 61 0.48 -11 0.64 -75 S-Parameter (TYP.) S21 S12 Magn. Angle(deg) Magn. Angle(deg) 3.39 38 0.03 -17 3.90 3 0.04 -52 4.30 -31 0.05 -86 4.52 -66 0.06 -122 4.51 -101 0.06 -157 4.33 -135 0.06 166 4.15 -168 0.05 134 4.04 159 0.06 100 3.92 117 0.06 49 3.60 76 0.06 8 2.86 33 0.05 -40 MITSUBISHI ELECTRIC Magn. 0.59 0.49 0.41 0.32 0.27 0.24 0.23 0.21 0.15 0.05 0.16 S22 Angle(deg) 26 -1 -30 -67 -106 -137 -165 174 149 165 -115 June-'04 MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFS45V2735 2.7 - 3.5GHz BAND 30W INTERNALLY MATCHED GaAs FET MITSUBISHI ELECTRIC June-'04