MMBD4448DW Surface Mount Switching Diode Array Elektronische Bauelemente RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free SOT-363 FEATURES · · · Fast Switching Speed o .055(1.40) .047(1.20) Ultra-Small Surface Mount Package High Conductance Power dissipation 8 o 0 .026TYP (0.65TYP) .021REF (0.525)REF MECHANICAL DATA · · · · · .053(1.35) .045(1.15) .096(2.45) .085(2.15) Case: SOT-363, Molded Plastic Terminals: Solderable per MIL-STD-202, Method 208 4 Polarity: See Diagrams Below .018(0.46) .010(0.26) 5 Weight: 0.006 grams (approx.) 6 O Mounting Position: Any 2 1 .014(0.35) .006(0.15) 3 .006(0.15) .003(0.08) .087(2.20) .079(2.00) 6 5 .004(0.10) .000(0.00) 4 .043(1.10) .035(0.90) 1 2 .039(1.00) .035(0.90) 3 Dimensions in inches and (millimeters) MMBD4448 DW Marking: KA3 MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Rating Symbol Value Unit Non-Repetitive Peak Reverse Voltage VRM 100 V Peak Repetitive Reverse Voltage VRRM 75 V RMS Reverse Voltage VR(RMS) 53 V Io I FM 250 mA 500 mA 625 °C/W – 55 to +150 °C Average Rectified out Current(Note 1) Forward Continuous Current (Note 1) Thermal Resistance Junction to Ambient Air (Note1) R thJA Storage Temperature Range Tstg Notes: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (EACH DIODE) Symbol Min Max Unit V(BR)R 75 — V 0.62 0.72 — 0.855 — 1.0 IF=150mA — 1.25 VR=75V — 2.5 uA — — 50 30 uA uA — 25 nA Characteristic Reverse Breakdown Voltage (Note 2) Forward Voltage (Note 2) IF=5.0mA IF=10mA VF IF=50mA Reverse Current (Note 2) VR=75V, Tj=150 C O VR=25V, Tj=150OC IR VR=20V V Total Capacitance VR=0, f=1.0MHz CT — 4.0 pF Reverse Recovery Time IF=IR=10mA, Irr=0.1XIR,RL=100 Ohms t rr — 4.0 nS Note 2. Short duration test pulse used to minimize self-heating. http://www.SeCoSGmbH.com 01-Jan-2006 Rev.B Any changing of specification will not be informed individual Page 1 of 2 MMBD4448DW Surface Mount Switching Diode Array 1000 IR, INSTANTANEOUS REVERSE CURRENT (nA) IF, INSTANTANEOUS FORWARD CURRENT (mA) Elektronische Bauelemente 100 10 TA = -40ºC TA = 0ºC TA = 25ºC 1 TA = 75ºC TA = 125ºC 10000 TA = 125ºC 1000 TA = 75ºC 100 TA = 25ºC 10 TA = 0ºC 1 TA = -40ºC 0.1 0.1 0 0.8 0.4 1.2 1.6 0 VF, INSTANTANEOUS FORWARD VOLTAGE (V) Fig. 1 Typical Forward Characteristics 20 60 40 80 100 VR, REVERSE VOLTAGE (V) Fig. 2 Typical Reverse Characteristics 3 250 f = 1MHz Pd, POWER DISSIPATION (mW) CT, TOTAL CAPACITANCE (pF) 2.5 2 1.5 1 0.5 0 0 20 10 40 30 VR, REVERSE VOLTAGE (V) Fig. 3 Typical Total Capacitance vs. Reverse Voltage 200 150 100 50 0 0 100 200 TA, AMBIENT TEMPERATURE (°C) Fig. 4 Power Derating Curve, Total Package trr, REVERSE RECOVERY TIME (nS) 2.5 2.0 1.5 1.0 0.5 0 0 2 4 6 8 10 IF, FORWARD CURRENT (mA) Fig. 5 Reverse Recovery Time vs Forward Current. http://www.SeCoSGmbH.com 01-Jan-2006 Rev.B Any changing of specification will not be informed individual Page 2 of 2