PD - 97460 AUTOMOTIVE GRADE AUIRF1404Z AUIRF1404ZS AUIRF1404ZL Features l l l l l l l Advanced Process Technology Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * HEXFET® Power MOSFET V(BR)DSS D G Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications. RDS(on) max. 3.7mΩ ID (Silicon Limited) 180A n ID (Package Limited) S Description 40V D D D G TO-220AB AUIRF1404Z G Gate D 160A S G D S G D2Pak AUIRF1404ZS D S TO-262 AUIRF1404ZL D Drain S Source Absolute Maximum Ratings Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified. Parameter ID @ TC = 25°C Max. Continuous Drain Current, VGS @ 10V (Silicon Limited) 180 Units n ID @ TC = 100°C Continuous Drain Current, VGS @ 10V (Silicon Limited) 120 ID @ TC = 25°C 160 IDM Continuous Drain Current, VGS @ 10V (Package Limited) Pulsed Drain Current PD @TC = 25°C Power Dissipation 200 W VGS 1.3 ± 20 W/°C V EAS Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy (Thermally Limited) 330 mJ EAS (tested ) Single Pulse Avalanche Energy Tested Value IAR Avalanche Current EAR Repetitive Avalanche Energy TJ Operating Junction and TSTG Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case ) Mounting Torque, 6-32 or M3 screw c c 480 A mJ -55 to + 175 Parameter RθJC Junction-to-Case RθCS Case-to-Sink, Flat Greased Surface RθJA Junction-to-Ambient i d g Thermal Resistance RθJA 710 See Fig.12a, 12b, 15, 16 i l h A i Junction-to-Ambient (PCB Mount) j °C 300 10 lbf in (1.1N m) y Typ. ––– y Max. Units 0.75 °C/W k 0.50 ––– ––– 62 ––– 40 HEXFET® is a registered trademark of International Rectifier. *Qualification standards can be found at http://www.irf.com/ www.irf.com 1 02/19/2010 AUIRF1404Z/S/L Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter V(BR)DSS ∆V(BR)DSS/∆TJ RDS(on) VGS(th) gfs IDSS IGSS Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Min. Typ. Max. Units 40 ––– ––– 2.0 170 ––– ––– ––– ––– ––– 0.033 2.7 ––– ––– ––– ––– ––– ––– ––– ––– 3.7 4.0 ––– 20 250 200 -200 Conditions V VGS = 0V, ID = 250µA V/°C Reference to 25°C, ID = 1mA mΩ VGS = 10V, ID = 75A V VDS = VGS, ID = 250µA V VDS = 25V, ID = 75A µA VDS = 40V, VGS = 0V VDS = 40V, VGS = 0V, TJ = 125°C nA VGS = 20V VGS = -20V e Dynamic Electrical @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions Qg Qgs Qgd td(on) tr td(off) tf LD Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance ––– ––– ––– ––– ––– ––– ––– ––– 100 31 42 18 110 36 58 4.5 150 ––– ––– ––– ––– ––– ––– ––– LS Internal Source Inductance ––– 7.5 ––– 6mm (0.25in.) from package Ciss Coss Crss Coss Coss Coss eff. Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Output Capacitance Effective Output Capacitance ––– ––– ––– ––– ––– ––– 4340 1030 550 3300 920 1350 ––– ––– ––– ––– ––– ––– and center of die contact VGS = 0V VDS = 25V ƒ = 1.0MHz VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz VGS = 0V, VDS = 32V, ƒ = 1.0MHz VGS = 0V, VDS = 0V to 32V nC ns nH pF ID = 75A VDS = 32V VGS = 10V VDD = 20V ID = 75A RG = 3.0 Ω VGS = 10V Between lead, e e f Diode Characteristics Parameter Min. Typ. Max. Units IS Continuous Source Current ––– ––– 160 ISM (Body Diode) Pulsed Source Current ––– ––– 750 VSD trr Qrr ton (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time ––– ––– ––– ––– 28 34 1.3 42 51 c Notes: Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11). Limited by TJmax, starting TJ = 25°C, L = 0.11mH RG = 25Ω, IAS = 75A, VGS =10V. Part not recommended for use above this value. Pulse width ≤ 1.0ms; duty cycle ≤ 2%. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS . Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive avalanche performance. This value is determined from sample failure population, starting T J = 25°C, L = 0.11mH, RG = 25Ω, IAS = 75A, VGS =10V. 2 Conditions MOSFET symbol A V ns nC showing the integral reverse p-n junction diode. TJ = 25°C, IS = 75A, VGS = 0V TJ = 25°C, IF = 75A, VDD = 20V di/dt = 100A/µs e e Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) This is only applied to TO-220AB pakcage. This is applied to D2Pak, when mounted on 1" square PCB (FR4 or G-10 Material). For recommended footprint and soldering techniques refer to application note #AN-994. TO-220 device will have an Rth value of 0.65°C/W. Rθ is measured at TJ approximately 90°C. Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 160A. Note that current limitations arising from heating of the device leads may occur with some lead mounting arrangements.(Refer to AN1140) http://www.irf.com/technical-info/appnotes/an-1140.pdf www.irf.com AUIRF1404Z/S/L Qualification Information† Automotive (per AEC-Q101) Qualification Level Comments: This part number(s) passed Automotive qualification. IR’s Industrial and Consumer qualification level is granted by extension of the higher Automotive level. TO-220AB Moisture Sensitivity Level N/A TO-262 2 D PAK Machine Model †† N/A MSL1 Class M4 AEC-Q101-002 ESD Human Body Model Class H1C AEC-Q101-001 Charged Device Model Class C3 AEC-Q101-005 RoHS Compliant Yes Qualification standards can be found at International Rectifiers web site: http//www.irf.com/ Exceptions to AEC-Q101 requirements are noted in the qualification report. www.irf.com 3 AUIRF1404Z/S/L 1000 1000 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V 100 TOP ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) TOP 10 4.5V 1 20µs PULSE WIDTH Tj = 25°C 0.1 0.1 1 10 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V 100 4.5V 10 100 0.1 10 100 VDS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1000 200 T J = 25°C Gfs, Forward Transconductance (S) ID, Drain-to-Source Current ( A) 20µs PULSE WIDTH Tj = 175°C 1 VDS, Drain-to-Source Voltage (V) T J = 175°C 100 10 VDS = 15V 20µs PULSE WIDTH 1 4.0 5.0 6.0 7.0 8.0 9.0 10.0 VGS , Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics 4 VGS 11.0 T J = 175°C 160 120 T J = 25°C 80 40 VDS = 15V 20µs PULSE WIDTH 0 0 40 80 120 160 ID, Drain-to-Source Current (A) Fig 4. Typical Forward Transconductance Vs. Drain Current www.irf.com ance AUIRF1404Z/S/L 8000 VGS , Gate-to-Source Voltage (V) Coss = Cds + Cgd 6000 C, Capacitance (pF) 20 VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, C ds SHORTED Crss = Cgd Ciss 4000 2000 Coss ID= 75A VDS= 32V VDS= 20V 16 12 8 4 Crss 0 0 1 10 0 100 40 10000 OPERATION IN THIS AREA LIMITED BY R DS(on) ID, Drain-to-Source Current (A) ISD, Reverse Drain Current (A) 1000.0 T J = 175°C 10.0 T J = 25°C 1.0 0.6 1.0 1.4 1000 100 100µsec 10 1 VGS = 0V 0.2 160 Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 0.1 120 Q G Total Gate Charge (nC) VDS, Drain-to-Source Voltage (V) 100.0 80 1msec Tc = 25°C Tj = 175°C Single Pulse 0 1.8 1 10msec 10 100 1000 VDS , Drain-toSource Voltage (V) VSD, Source-toDrain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage www.irf.com Fig 8. Maximum Safe Operating Area 5 AUIRF1404Z/S/L 200 Limited By Package ID, Drain Current (A) 150 100 50 ID = 75A VGS = 10V 1.5 (Normalized) RDS(on) , Drain-to-Source On Resistance 2.0 1.0 0.5 0 25 50 75 100 125 150 175 -60 -40 -20 0 20 40 60 80 100 120 140 160 180 TJ , Junction Temperature (°C) T C , Case Temperature (°C) Fig 10. Normalized On-Resistance Vs. Temperature Fig 9. Maximum Drain Current Vs. Case Temperature 1 Thermal Response ( Z thJC ) D = 0.50 0.20 0.1 0.10 0.05 0.02 0.01 0.01 SINGLE PULSE ( THERMAL RESPONSE ) Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.001 1E-006 1E-005 0.0001 0.001 0.01 0.1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case 6 www.irf.com AUIRF1404Z/S/L 15V D.U.T RG + V - DD IAS 20V VGS A 0.01Ω tp Fig 12a. Unclamped Inductive Test Circuit V(BR)DSS EAS, Single Pulse Avalanche Energy (mJ) DRIVER L VDS 600 tp TOP 500 BOTTOM ID 31A 53A 75A 400 300 200 100 0 25 50 75 100 125 150 175 Starting T J , Junction Temperature (°C) I AS Fig 12c. Maximum Avalanche Energy Vs. Drain Current Fig 12b. Unclamped Inductive Waveforms QG 10 V QGD 4.0 VG Charge Fig 13a. Basic Gate Charge Waveform Current Regulator Same Type as D.U.T. 50KΩ 12V VGS(th) Gate threshold Voltage (V) QGS ID = 250µA 3.0 2.0 .2µF 1.0 .3µF D.U.T. + V - DS -75 -50 -25 0 25 50 75 100 125 150 175 T J , Temperature ( °C ) VGS 3mA IG ID Current Sampling Resistors Fig 14. Threshold Voltage Vs. Temperature Fig 13b. Gate Charge Test Circuit www.irf.com 7 AUIRF1404Z/S/L Avalanche Current (A) 10000 Allowed avalanche Current vs avalanche pulsewidth, tav assuming ∆ Tj = 25°C due to avalanche losses. Note: In no case should Tj be allowed to exceed Tjmax Duty Cycle = Single Pulse 1000 0.01 100 0.05 0.10 10 1 1.0E-08 1.0E-07 1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01 tav (sec) Fig 15. Typical Avalanche Current Vs.Pulsewidth EAR , Avalanche Energy (mJ) 400 TOP Single Pulse BOTTOM 10% Duty Cycle ID = 75A 300 200 100 0 25 50 75 100 125 150 Starting T J , Junction Temperature (°C) Fig 16. Maximum Avalanche Energy Vs. Temperature 8 Notes on Repetitive Avalanche Curves , Figures 15, 16: (For further info, see AN-1005 at www.irf.com) 1. Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of T jmax. This is validated for every part type. 2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded. 3. Equation below based on circuit and waveforms shown in Figures 12a, 12b. 4. PD (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. Iav = Allowable avalanche current. 7. ∆T = Allowable rise in junction temperature, not to exceed 175 Tjmax (assumed as 25°C in Figure 15, 16). tav = Average time in avalanche. D = Duty cycle in avalanche = tav ·f ZthJC(D, tav ) = Transient thermal resistance, see figure 11) PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC Iav = 2DT/ [1.3·BV·Zth] EAS (AR) = PD (ave)·tav www.irf.com AUIRF1404Z/S/L D.U.T Driver Gate Drive + - - * D.U.T. ISD Waveform Reverse Recovery Current + RG • dv/dt controlled by RG • Driver same type as D.U.T. • I SD controlled by Duty Factor "D" • D.U.T. - Device Under Test P.W. Period VGS=10V Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer D= Period P.W. + V DD + Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage - Body Diode VDD Forward Drop Inductor Curent Ripple ≤ 5% * ISD VGS = 5V for Logic Level Devices Fig 17. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs V DS V GS RG RD D.U.T. + -V DD 10V Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % Fig 18a. Switching Time Test Circuit VDS 90% 10% VGS td(on) tr t d(off) tf Fig 18b. Switching Time Waveforms www.irf.com 9 AUIRF1404Z/S/L TO-220AB Package Outline Dimensions are shown in millimeters (inches) TO-220AB Part Marking Information Part Number AUIRF1404Z YWWA IR Logo XX or Date Code Y= Year WW= Work Week A= Automotive, LeadFree XX Lot Code TO-220AB packages are not recommended for Surface Mount Application. Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 10 www.irf.com AUIRF1404Z/S/L D2Pak (TO-263AB) Package Outline Dimensions are shown in millimeters (inches) D2Pak (TO-263AB) Part Marking Information Part Number AUIRF1404ZS YWWA IR Logo XX or Date Code Y= Year WW= Work Week A= Automotive, LeadFree XX Lot Code Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ www.irf.com 11 AUIRF1404Z/S/L TO-262 Package Outline Dimensions are shown in millimeters (inches) TO-262 Part Marking Information Part Number AUIRF1404ZL YWWA IR Logo XX or Date Code Y= Year WW= Work Week A= Automotive, LeadFree XX Lot Code Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 12 www.irf.com AUIRF1404Z/S/L D2Pak Tape & Reel Information Dimensions are shown in millimeters (inches) TRR 1.60 (.063) 1.50 (.059) 4.10 (.161) 3.90 (.153) FEED DIRECTION 1.85 (.073) 1.65 (.065) 1.60 (.063) 1.50 (.059) 11.60 (.457) 11.40 (.449) 0.368 (.0145) 0.342 (.0135) 15.42 (.609) 15.22 (.601) 24.30 (.957) 23.90 (.941) TRL 10.90 (.429) 10.70 (.421) 1.75 (.069) 1.25 (.049) 4.72 (.136) 4.52 (.178) 16.10 (.634) 15.90 (.626) FEED DIRECTION 13.50 (.532) 12.80 (.504) 27.40 (1.079) 23.90 (.941) 4 330.00 (14.173) MAX. NOTES : 1. COMFORMS TO EIA-418. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION MEASURED @ HUB. 4. INCLUDES FLANGE DISTORTION @ OUTER EDGE. 60.00 (2.362) MIN. 30.40 (1.197) MAX. 26.40 (1.039) 24.40 (.961) 3 4 Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ www.irf.com 13 AUIRF1404Z/S/L Base part number Package Type AUIRF1404Z AUIRF1404ZL AUIRF1404ZS TO-220 TO-262 D2Pak 14 Standard Pack Form Tube Tube Tube Tape and Reel Left Tape and Reel Right Complete Part Number Quantity 50 50 50 800 800 AUIRF1404Z AUIRF1404ZL AUIRF1404ZS AUIRF1404ZSTRL AUIRF1404ZSTRR www.irf.com AUIRF1404Z/S/L IMPORTANT NOTICE Unless specifically designated for the automotive market, International Rectifier Corporation and its subsidiaries (IR) reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue any product or services without notice. Part numbers designated with the “AU” prefix follow automotive industry and / or customer specific requirements with regards to product discontinuance and process change notification. All products are sold subject to IR’s terms and conditions of sale supplied at the time of order acknowledgment. IR warrants performance of its hardware products to the specifications applicable at the time of sale in accordance with IR’s standard warranty. Testing and other quality control techniques are used to the extent IR deems necessary to support this warranty. Except where mandated by government requirements, testing of all parameters of each product is not necessarily performed. IR assumes no liability for applications assistance or customer product design. Customers are responsible for their products and applications using IR components. To minimize the risks with customer products and applications, customers should provide adequate design and operating safeguards. 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For technical support, please contact IR’s Technical Assistance Center http://www.irf.com/technical-info/ WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245 Tel: (310) 252-7105 www.irf.com 15