IRF AUIRF1404ZS Hexfetâ® power mosfet Datasheet

PD - 97460
AUTOMOTIVE GRADE
AUIRF1404Z
AUIRF1404ZS
AUIRF1404ZL
Features
l
l
l
l
l
l
l
Advanced Process Technology
Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
HEXFET® Power MOSFET
V(BR)DSS
D
G
Specifically designed for Automotive applications,
this HEXFET® Power MOSFET utilizes the latest
processing techniques to achieve extremely low
on-resistance per silicon area. Additional features
of this design are a 175°C junction operating
temperature, fast switching speed and improved
repetitive avalanche rating . These features combine to make this design an extremely efficient
and reliable device for use in Automotive applications and a wide variety of other applications.
RDS(on) max.
3.7mΩ
ID (Silicon Limited)
180A
n
ID (Package Limited)
S
Description
40V
D
D
D
G
TO-220AB
AUIRF1404Z
G
Gate
D
160A
S
G
D
S
G
D2Pak
AUIRF1404ZS
D
S
TO-262
AUIRF1404ZL
D
Drain
S
Source
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in
the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Ambient temperature (TA) is 25°C, unless otherwise specified.
Parameter
ID @ TC = 25°C
Max.
Continuous Drain Current, VGS @ 10V (Silicon Limited)
180
Units
n
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V (Silicon Limited)
120
ID @ TC = 25°C
160
IDM
Continuous Drain Current, VGS @ 10V (Package Limited)
Pulsed Drain Current
PD @TC = 25°C
Power Dissipation
200
W
VGS
1.3
± 20
W/°C
V
EAS
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy (Thermally Limited)
330
mJ
EAS (tested )
Single Pulse Avalanche Energy Tested Value
IAR
Avalanche Current
EAR
Repetitive Avalanche Energy
TJ
Operating Junction and
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case )
Mounting Torque, 6-32 or M3 screw
c
c
480
A
mJ
-55 to + 175
Parameter
RθJC
Junction-to-Case
RθCS
Case-to-Sink, Flat Greased Surface
RθJA
Junction-to-Ambient
i
d
g
Thermal Resistance
RθJA
710
See Fig.12a, 12b, 15, 16
i
l
h
A
i
Junction-to-Ambient (PCB Mount) j
°C
300
10 lbf in (1.1N m)
y
Typ.
–––
y
Max.
Units
0.75
°C/W
k
0.50
–––
–––
62
–––
40
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
www.irf.com
1
02/19/2010
AUIRF1404Z/S/L
Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
V(BR)DSS
∆V(BR)DSS/∆TJ
RDS(on)
VGS(th)
gfs
IDSS
IGSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Min. Typ. Max. Units
40
–––
–––
2.0
170
–––
–––
–––
–––
–––
0.033
2.7
–––
–––
–––
–––
–––
–––
–––
–––
3.7
4.0
–––
20
250
200
-200
Conditions
V VGS = 0V, ID = 250µA
V/°C Reference to 25°C, ID = 1mA
mΩ VGS = 10V, ID = 75A
V VDS = VGS, ID = 250µA
V VDS = 25V, ID = 75A
µA VDS = 40V, VGS = 0V
VDS = 40V, VGS = 0V, TJ = 125°C
nA VGS = 20V
VGS = -20V
e
Dynamic Electrical @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
LD
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
–––
–––
–––
–––
–––
–––
–––
–––
100
31
42
18
110
36
58
4.5
150
–––
–––
–––
–––
–––
–––
–––
LS
Internal Source Inductance
–––
7.5
–––
6mm (0.25in.)
from package
Ciss
Coss
Crss
Coss
Coss
Coss eff.
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
–––
–––
–––
–––
–––
–––
4340
1030
550
3300
920
1350
–––
–––
–––
–––
–––
–––
and center of die contact
VGS = 0V
VDS = 25V
ƒ = 1.0MHz
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
VGS = 0V, VDS = 32V, ƒ = 1.0MHz
VGS = 0V, VDS = 0V to 32V
nC
ns
nH
pF
ID = 75A
VDS = 32V
VGS = 10V
VDD = 20V
ID = 75A
RG = 3.0 Ω
VGS = 10V
Between lead,
e
e
f
Diode Characteristics
Parameter
Min. Typ. Max. Units
IS
Continuous Source Current
–––
–––
160
ISM
(Body Diode)
Pulsed Source Current
–––
–––
750
VSD
trr
Qrr
ton
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
–––
–––
–––
–––
28
34
1.3
42
51
c
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11).
‚ Limited by TJmax, starting TJ = 25°C, L = 0.11mH
RG = 25Ω, IAS = 75A, VGS =10V. Part not
recommended for use above this value.
ƒ Pulse width ≤ 1.0ms; duty cycle ≤ 2%.
„ Coss eff. is a fixed capacitance that gives the
same charging time as Coss while VDS is rising
from 0 to 80% VDSS .
Limited by TJmax , see Fig.12a, 12b, 15, 16 for
typical repetitive avalanche performance.
† This value is determined from sample failure
population, starting T J = 25°C, L = 0.11mH, RG =
25Ω, IAS = 75A, VGS =10V.
2
Conditions
MOSFET symbol
A
V
ns
nC
showing the
integral reverse
p-n junction diode.
TJ = 25°C, IS = 75A, VGS = 0V
TJ = 25°C, IF = 75A, VDD = 20V
di/dt = 100A/µs
e
e
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
‡ This is only applied to TO-220AB pakcage.
ˆ This is applied to D2Pak, when mounted on 1" square PCB (FR4 or G-10 Material). For recommended footprint and soldering
techniques refer to application note #AN-994.
‰ TO-220 device will have an Rth value of 0.65°C/W.
Š Rθ is measured at TJ approximately 90°C.
ΠCalculated continuous current based on maximum allowable
junction temperature. Package limitation current is 160A. Note
that current limitations arising from heating of the device leads
may occur with some lead mounting arrangements.(Refer to AN1140) http://www.irf.com/technical-info/appnotes/an-1140.pdf
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AUIRF1404Z/S/L
Qualification Information†
Automotive
(per AEC-Q101)
Qualification Level
Comments: This part number(s) passed Automotive qualification.
IR’s Industrial and Consumer qualification level is granted by
extension of the higher Automotive level.
TO-220AB
Moisture Sensitivity Level
N/A
TO-262
2
D PAK
Machine Model
††
N/A
MSL1
Class M4
AEC-Q101-002
ESD
Human Body Model
Class H1C
AEC-Q101-001
Charged Device Model
Class C3
AEC-Q101-005
RoHS Compliant
Yes
† Qualification standards can be found at International Rectifier’s web site: http//www.irf.com/
†† Exceptions to AEC-Q101 requirements are noted in the qualification report.
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3
AUIRF1404Z/S/L
1000
1000
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
100
TOP
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
TOP
10
4.5V
1
20µs PULSE WIDTH
Tj = 25°C
0.1
0.1
1
10
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
100
4.5V
10
100
0.1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000
200
T J = 25°C
Gfs, Forward Transconductance (S)
ID, Drain-to-Source Current ( A)
20µs PULSE WIDTH
Tj = 175°C
1
VDS, Drain-to-Source Voltage (V)
T J = 175°C
100
10
VDS = 15V
20µs PULSE WIDTH
1
4.0
5.0
6.0
7.0
8.0
9.0
10.0
VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
4
VGS
11.0
T J = 175°C
160
120
T J = 25°C
80
40
VDS = 15V
20µs PULSE WIDTH
0
0
40
80
120
160
ID, Drain-to-Source Current (A)
Fig 4. Typical Forward Transconductance
Vs. Drain Current
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ance
AUIRF1404Z/S/L
8000
VGS , Gate-to-Source Voltage (V)
Coss = Cds + Cgd
6000
C, Capacitance (pF)
20
VGS = 0V,
f = 1 MHZ
Ciss = Cgs + Cgd, C ds SHORTED
Crss = Cgd
Ciss
4000
2000
Coss
ID= 75A
VDS= 32V
VDS= 20V
16
12
8
4
Crss
0
0
1
10
0
100
40
10000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
1000.0
T J = 175°C
10.0
T J = 25°C
1.0
0.6
1.0
1.4
1000
100
100µsec
10
1
VGS = 0V
0.2
160
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
0.1
120
Q G Total Gate Charge (nC)
VDS, Drain-to-Source Voltage (V)
100.0
80
1msec
Tc = 25°C
Tj = 175°C
Single Pulse
0
1.8
1
10msec
10
100
1000
VDS , Drain-toSource Voltage (V)
VSD, Source-toDrain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
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Fig 8. Maximum Safe Operating Area
5
AUIRF1404Z/S/L
200
Limited By Package
ID, Drain Current (A)
150
100
50
ID = 75A
VGS = 10V
1.5
(Normalized)
RDS(on) , Drain-to-Source On Resistance
2.0
1.0
0.5
0
25
50
75
100
125
150
175
-60 -40 -20
0
20 40 60 80 100 120 140 160 180
TJ , Junction Temperature (°C)
T C , Case Temperature (°C)
Fig 10. Normalized On-Resistance
Vs. Temperature
Fig 9. Maximum Drain Current Vs.
Case Temperature
1
Thermal Response ( Z thJC )
D = 0.50
0.20
0.1
0.10
0.05
0.02
0.01
0.01
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
6
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AUIRF1404Z/S/L
15V
D.U.T
RG
+
V
- DD
IAS
20V
VGS
A
0.01Ω
tp
Fig 12a. Unclamped Inductive Test Circuit
V(BR)DSS
EAS, Single Pulse Avalanche Energy (mJ)
DRIVER
L
VDS
600
tp
TOP
500
BOTTOM
ID
31A
53A
75A
400
300
200
100
0
25
50
75
100
125
150
175
Starting T J , Junction Temperature (°C)
I AS
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
Fig 12b. Unclamped Inductive Waveforms
QG
10 V
QGD
4.0
VG
Charge
Fig 13a. Basic Gate Charge Waveform
Current Regulator
Same Type as D.U.T.
50KΩ
12V
VGS(th) Gate threshold Voltage (V)
QGS
ID = 250µA
3.0
2.0
.2µF
1.0
.3µF
D.U.T.
+
V
- DS
-75 -50 -25
0
25
50
75
100 125 150 175
T J , Temperature ( °C )
VGS
3mA
IG
ID
Current Sampling Resistors
Fig 14. Threshold Voltage Vs. Temperature
Fig 13b. Gate Charge Test Circuit
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7
AUIRF1404Z/S/L
Avalanche Current (A)
10000
Allowed avalanche Current vs
avalanche pulsewidth, tav
assuming ∆ Tj = 25°C due to
avalanche losses. Note: In no
case should Tj be allowed to
exceed Tjmax
Duty Cycle = Single Pulse
1000
0.01
100
0.05
0.10
10
1
1.0E-08
1.0E-07
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
tav (sec)
Fig 15. Typical Avalanche Current Vs.Pulsewidth
EAR , Avalanche Energy (mJ)
400
TOP
Single Pulse
BOTTOM 10% Duty Cycle
ID = 75A
300
200
100
0
25
50
75
100
125
150
Starting T J , Junction Temperature (°C)
Fig 16. Maximum Avalanche Energy
Vs. Temperature
8
Notes on Repetitive Avalanche Curves , Figures 15, 16:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a
temperature far in excess of T jmax. This is validated for
every part type.
2. Safe operation in Avalanche is allowed as long asTjmax is
not exceeded.
3. Equation below based on circuit and waveforms shown in
Figures 12a, 12b.
4. PD (ave) = Average power dissipation per single
avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for
voltage increase during avalanche).
6. Iav = Allowable avalanche current.
7. ∆T = Allowable rise in junction temperature, not to exceed
175
Tjmax (assumed as 25°C in Figure 15, 16).
tav = Average time in avalanche.
D = Duty cycle in avalanche = tav ·f
ZthJC(D, tav ) = Transient thermal resistance, see figure 11)
PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC
Iav = 2DT/ [1.3·BV·Zth]
EAS (AR) = PD (ave)·tav
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AUIRF1404Z/S/L
D.U.T
Driver Gate Drive
ƒ
+
-
-
„
*
D.U.T. ISD Waveform
Reverse
Recovery
Current
+

RG
• dv/dt controlled by RG
• Driver same type as D.U.T.
• I SD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
P.W.
Period
VGS=10V
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
‚
D=
Period
P.W.
+
V DD
+
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
-
Body Diode
VDD
Forward Drop
Inductor Curent
Ripple ≤ 5%
*
ISD
VGS = 5V for Logic Level Devices
Fig 17. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
V DS
V GS
RG
RD
D.U.T.
+
-V DD
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 18a. Switching Time Test Circuit
VDS
90%
10%
VGS
td(on)
tr
t d(off)
tf
Fig 18b. Switching Time Waveforms
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9
AUIRF1404Z/S/L
TO-220AB Package Outline
Dimensions are shown in millimeters (inches)
TO-220AB Part Marking Information
Part Number
AUIRF1404Z
YWWA
IR Logo
XX
or
Date Code
Y= Year
WW= Work Week
A= Automotive, LeadFree
XX
Lot Code
TO-220AB packages are not recommended for Surface Mount Application.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
10
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AUIRF1404Z/S/L
D2Pak (TO-263AB) Package Outline
Dimensions are shown in millimeters (inches)
D2Pak (TO-263AB) Part Marking Information
Part Number
AUIRF1404ZS
YWWA
IR Logo
XX
or
Date Code
Y= Year
WW= Work Week
A= Automotive, LeadFree
XX
Lot Code
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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11
AUIRF1404Z/S/L
TO-262 Package Outline
Dimensions are shown in millimeters (inches)
TO-262 Part Marking Information
Part Number
AUIRF1404ZL
YWWA
IR Logo
XX
or
Date Code
Y= Year
WW= Work Week
A= Automotive, LeadFree
XX
Lot Code
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
12
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AUIRF1404Z/S/L
D2Pak Tape & Reel Information
Dimensions are shown in millimeters (inches)
TRR
1.60 (.063)
1.50 (.059)
4.10 (.161)
3.90 (.153)
FEED DIRECTION 1.85 (.073)
1.65 (.065)
1.60 (.063)
1.50 (.059)
11.60 (.457)
11.40 (.449)
0.368 (.0145)
0.342 (.0135)
15.42 (.609)
15.22 (.601)
24.30 (.957)
23.90 (.941)
TRL
10.90 (.429)
10.70 (.421)
1.75 (.069)
1.25 (.049)
4.72 (.136)
4.52 (.178)
16.10 (.634)
15.90 (.626)
FEED DIRECTION
13.50 (.532)
12.80 (.504)
27.40 (1.079)
23.90 (.941)
4
330.00
(14.173)
MAX.
NOTES :
1. COMFORMS TO EIA-418.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
60.00 (2.362)
MIN.
30.40 (1.197)
MAX.
26.40 (1.039)
24.40 (.961)
3
4
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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13
AUIRF1404Z/S/L
Base part
number
Package Type
AUIRF1404Z
AUIRF1404ZL
AUIRF1404ZS
TO-220
TO-262
D2Pak
14
Standard Pack
Form
Tube
Tube
Tube
Tape and Reel Left
Tape and Reel Right
Complete Part Number
Quantity
50
50
50
800
800
AUIRF1404Z
AUIRF1404ZL
AUIRF1404ZS
AUIRF1404ZSTRL
AUIRF1404ZSTRR
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AUIRF1404Z/S/L
IMPORTANT NOTICE
Unless specifically designated for the automotive market, International Rectifier Corporation and its subsidiaries (IR) reserve the right to make corrections, modifications, enhancements, improvements, and other
changes to its products and services at any time and to discontinue any product or services without notice.
Part numbers designated with the “AU” prefix follow automotive industry and / or customer specific
requirements with regards to product discontinuance and process change notification. All products are sold
subject to IR’s terms and conditions of sale supplied at the time of order acknowledgment.
IR warrants performance of its hardware products to the specifications applicable at the time of sale in
accordance with IR’s standard warranty. Testing and other quality control techniques are used to the extent
IR deems necessary to support this warranty. Except where mandated by government requirements, testing
of all parameters of each product is not necessarily performed.
IR assumes no liability for applications assistance or customer product design. Customers are responsible
for their products and applications using IR components. To minimize the risks with customer products and
applications, customers should provide adequate design and operating safeguards.
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WORLD HEADQUARTERS:
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Tel: (310) 252-7105
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15