GENERAL PURPOSE DUAL-GATE GaAs MESFET FEATURES NE25339 POWER GAIN AND NOISE FIGURE vs. DRAIN TO SOURCE VOLTAGE VGS = 1 V, IDS = 10 mA, f = 900 MHz • SUITABLE FOR USE AS RF AMPLIFIER AND MIXER IN UHF APPLICATIONS • LOW CRSS: 0.02 pF (TYP) GPS 20 10 • LG1 = 1.0 µm, LG2 = 1.5 µm, WG = 800 µm • ION IMPLANTATION • AVAILABLE IN TAPE & REEL OR BULK Noise Figure, NF (dB) • LOW NF: 1.1 dB TYP AT 900 MHz Power Gain, GPS (dB) • HIGH GPS: 20 dB (TYP) AT 900 MHz 5 10 NF 0 0 0 DESCRIPTION 5 10 Drain to Source Voltage, VDS (V) The NE253 is an 800 µm dual gate GaAs FET designed to provide flexibility in its application as a mixer, AGC amplifier, or low noise amplifier. As an example, by shorting the second gate to the source, higher gain can be realized than with single gate MESFETs. This device is available in a mini-mold (surface mount) package. ELECTRICAL CHARACTERISTICS (TA = 25°C) PART NUMBER PACKAGE OUTLINE SYMBOL NF GPS BVDSX IDSS PARAMETERS AND CONDITIONS Noise Figure at VDS = 5 V, VG2S = 1 V, ID = 10 mA, f = 900 MHz Power Gain at VDS = 5 V, VG2S = 1 V, IDS = 10 mA, f = 900 MHz Drain to Source Breakdown Voltage at VG1S = -4 V, VG2S = 0, IDS = 20 µA Saturated Drain Current at VDS = 5 V, VG2S = 0 V, VG1S = 0 V NE25339 39 UNITS MIN dB dB 16 V 10 mA 10 TYP MAX 1.1 2.5 20 40 80 VG1S (OFF) Gate 1 to Source Cutoff Voltage at VDS = 5 V, VG2S = 0 V, ID = 100 µA V -3.5 VG2S (OFF) Gate 2 to Source Cutoff Voltage at VDS = 5 V, VG1S = 0 V, ID = 100 µA V -3.5 µA 10 IG1SS Gate 1 Reverse Current at VDS = 0, VG1S = -4V, VG2S = 0 IG2SS Gate 2 Reverse Current at VDS = 0. VG2S = -4V, VG1S = 0 |YFS| Forward Transfer Admittance at VDS = 5 V, VG2S = 1 V, IDS = 10 mA, f = 1.0 kHz mS 25 35 CISS Input Capacitance at VDS = 5 V, VG2S = 1 V, ID = 10 mA, f = 1 MHz pF 1.0 1.5 2.0 CRSS Reverse Transfer Capacitance at VDS = 5 V, VG2S = 1 V, IDS = 10 mA, f = 1 MHz pF 0.02 0.035 µA 10 California Eastern Laboratories NE25339 ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C) SYMBOLS PARAMETERS UNITS RATINGS VDSX Drain to Source Voltage V 10 VG1S Gate 1 to Source Voltage V -4.5 VG2S Gate 2 to Source Voltage V -4.5 Drain Current mA 80 TCH Channel Temperature °C 125 TSTG Storage Temperature °C -55 to +125 mW 200 ID PT Total Power Dissipation Note: 1. Operation in excess of any one of these parameters may result in permanent damage. TYPICAL PERFORMANCE CURVES (TA = 25°C) TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE DRAIN CURRENT vs. GATE 1 TO SOURCE VOLTAGE 100 VDS = 5 V FREE AIR VG2S = 1 V 200 Drain Current, ID (mA) Total Power Dissipation, PT (mW) 250 150 100 50 0.5 V -0.5 V -1.0 V 0 0 0 25 50 75 100 1.8 125 -1.2 -0.6 0 +0.6 +1.2 Ambient Temperature, TA (°C) Gate 1 to Source Voltage, VG1S (V) FORWARD TRANSFER ADMITTANCE vs. GATE 1 TO SOURCE VOLTAGE FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT 80 Forward Transfer Admittance, |YFS| mS Forward Transfer Admittance, |YFS| mS 0V 50 VDS = 5 V f = 1 kHz VG2S = 1 V 40 0.5 V 0 -0.5 V 0 -1.8 80 VDS = 5 V f = 1kHz VGS2 =1V 40 0.5 V 0V -0.5 V 0 0 -1.2 -0.6 0 +0.6 Gate 1 to Source Voltage, VG1S (V) 50 +1.2 Drain Current, ID (mA) 100 NE25339 TYPICAL PERFORMANCE CURVES (TA = 25°C) INPUT CAPACITANCE vs. GATE 2 TO SOURCE VOLTAGE POWER GAIN AND NOISE FIGURE vs. GATE 2 TO SOURCE VOLTAGE 30 2.0 10 VG1S = 1 V at ID = mA VG1S = 1 V at ID = 5 mA 1.0 0 5 -15 -30 VDS = 5 V f = 1 kHz NF 0 -45 0 -1.0 0 +1.0 Noise Figure, NF (dB) 15 Power Gain, GPS (dB) Input Capacitance, CISS (pF) GPS -3.0 -2.0 -1.0 0 +1.0 +2.0 Gate 2 to Source Voltage, VG2S (V) Gate 2 to Source Voltage, VG2S (V) POWER GAIN AND NOISE FIGURE vs. DRAIN CURRENT 10 25 Power Gain, GPS (dB) VDS = 5 V VG2S = 1 V f = 900 MHz 15 5 10 NF 5 0 0 0 5 Drain Current, ID (mA) TEST CIRCUIT DIAGRAM 900 MHz GPS and NF TEST CIRCUIT VG2S (1 V) 1000pF 47 kΩ 1000 pF UP TO 10 pF D G2 UP TO 10 pF INPUT 50 Ω G1 S UP TO 10 pF UP TO 10 pF L1 OUTPUT 50 Ω L2 RFC 47 kΩ 1000pF 1000pF L1, L2, 35 X 5 X 0.2 mm Note: IDS = 10 mA VG1S VDD (5 V) 10 Noise Figure, NF (dB) GPS 20 NE25339 NONLINEAR MODEL UNITS FOR MODEL PARAMETERS Parameter Units time capacitance inductance resistance voltage current seconds farads henries ohms volts amps FET NONLINEAR MODEL PARAMETERS(1) Parameters FET1 FET2 Parameters FET1 FET2 UGW 100e-6 100e-6 IDSOC 0.07 0.07 NGF 4 4 RDB 1.0e9 1.0e9 IS 8.78e-10 8.78e-10 CBS 0.16e-12 0.16e-12 N 1.33 1.33 GDBM 0.00035 0 RG 0 0 KDB 0 0 RD 0 0 VDSM 1 1 RS 0 0 GMMAXAC 0.0195 0.0394 RIS 0 0 GAMMAAC 0.006 0.06 RID 0 0 KAPAAC 0.95 0.95 TAU 1.0e-12 1.0e-12 PEFFAC 1.67 2.07 CDSO 5.0e-15 5.0e-15 VTOAC -1.895 -1.895 C11O 0.25e-12 0.5e-12 VTSOAC -10 -10 C11TH 0.1e-12 0.1e-12 VDELTAC 3 3 0.0394 VINFL -1.12 -1.12 GMMAX 0.0294 DELTGS 1.2 1.2 GAMMA 0.005 0.006 DELTDS 1 0.1 KAPA 0.8 0.026 1.636 LAMBDA 0.25 0.25 PEFF 1.636 C11DELT 0 0 VTO -2 -2 C12O 0 0 VTSO -10 -10 C12SAT 0.01e-12 0.01e-12 VDELT 1.47 1.47 CGDSAT 1.0e-15 1.0e-15 VCH 1 1 KBK 0.03 0.03 VSAT 3 3 VBR 6.5 6.5 VGO 1.47 1.47 NBR 2 2 VDSO 3 3 (1) Libra EEFET3 Model NE25339 SCHEMATIC CAP CpkgG2D C = 0.15 IND Ld L = 1.30e-02 RES Rd R = 4.50 CAP Cg2d C = 0.15 IND Lg2 L = 2.50 PORT P1 port = 3 RES Rg2 R = 0.2 CAP CpkgG1G2 C = 0.21 CAP Cg1d C = 4.30e-02 IND Lg1 L = 1.00e-02 PORT Pgate1 port = 1 RES Rg1 R = 0.2 CAP Cg1s C = 1.00e-02 PORT Pdrain port = 2 EEFET3 FET2 UGW=800 N=4 FILE=720 m_t.mdif MODE=nonlinear CAP CpkgDS C = 0.21 RES R12 R = 0.10 EEFET3 FET1 UGW=800 N=4 FILE=720 m_b.mdif MODE=nonlinear RES Rs R = 5.30 CAP Cg2s C = 0.25 IND Ls L=3 CAP CpkgG1S C = 0.15 PORT P4 port = 4 UNITS Parameter capacitance inductance resistance Units picofarads nanohenries ohms NOTES: 1. This UGW value scales the model parameters on page 1. 2. This N value is the number of gate fingers and scales the model parameters on page 1. Frequency: Bias: 0.1 to 1.5 GHz VDS = 3 V, Vg1s= -1.45 V, Vg2s= 1 V, ID = 3 mA NE25339 ORDERING INFORMATION OUTLINE DIMENSIONS (Units in mm) OUTLINE 39 (SOT-143) +0.2 2.8 -0.3 +0.2 1.5 -0.1 2 2.9 ± 0.2 0.95 PART NUMBER AVAILABILITY IDSS RANGE (mA) MARKING NE25339 NE25339-T1 Bulk up to 3 K 3K/Reel 10 - 80 10 - 80 - +0.10 0.4 -0.05 (LEADS 2, 3, 4) 3 1.9 0.85 4 1 +0.10 0.6 -0.05 +0.2 1.1 -0.1 1. Source 2. Drain 3. Gate 2 4. Gate 1 0.8 0.16 +0.10 -0.06 5˚ 5˚ 0 to 0.1 EXCLUSIVE NORTH AMERICAN AGENT FOR RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS CALIFORNIA EASTERN LABORATORIES • Headquarters • 4590 Patrick Henry Drive • Santa Clara, CA 95054-1817 • (408) 988-3500 • Telex 34-6393 • FAX (408) 988-0279 24-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only) • Internet: http://WWW.CEL.COM 8/98 DATA SUBJECT TO CHANGE WITHOUT NOTICE