NTE2646 Silicon NPN Transistor General Purpose Amplifier, Switch Surface Mount Features: D Low Current D Low Voltage Applications: D General Purpose Switching and Amplification Absolute Maximum Ratings: Collector−Base Voltage (Open Emitter), VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V Collector−Emitter Voltage (Open Base), VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65V Emitter−Base Voltage (Open Collector), VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V DC Collector Current, IC Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100mA Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200mA Peak Base Current, IBM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200mA Total Power Dissipation (TA = +25°C, Note 1), Ptot . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200mW Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C Operating Ambient Temperature Range, TA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65° to +150°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65° to +150°C Thermal Resistance, Junction−to−Ambient (In free air, Note 1), RthJA . . . . . . . . . . . . . . . . . 625K/W Note 1. Transistor mounted on a FR4 printed−circuit board. Electrical Characteristics: (TA = +25 unless otherwise specified) Parameter Collector−Base Cut−Off Current Symbol ICBO Test Conditions Min Typ Max Unit VCB = 30V, IE = 0 − − 15 nA VCB = 30V, IE = 0, TJ = +150°C − − 5 µA nA Emitter−Base Cut−Off Current IEBO VEB = 5V, IC = 0 − − 100 DC Current Gain hFE IC = 10µA, VCE = 5V − 150 − IC = 2mA, VCE = 5V 200 290 450 IC = 10mA, IB = 0.5mA − 90 250 mV IC = 10mA, IB = 5mA, Note 2 − 200 600 mV IC = 10mA, IB = 0.5mA − 700 − mV IC = 10mA, IB = 5mA, Note 2 − 900 − mV Collector−Emitter Saturation Voltage Base−Emitter Saturation Voltage VCE(sat) VBE(sat) Note 2. Pulse Test: tp ≤ 300µs, δ ≤ 0.02. Electrical Characteristics (Cont’d): (TA = +25 unless otherwise specified) Parameter Symbol Base−Emitter Voltage VBE Test Conditions Min Typ Max Unit IC = 2mA, VCE = 5V 580 660 700 mV IC = 10mA, VCE = 5V − − 770 mV − − 3 pF Collector Capacitance Cc VCB = 5V, IC = IE = 0, f = 1MHz Transition Frequency fT VCE = 5V, IC = 10mA, f = 100MHz 100 − − MHz Noise Figure F IC = 200µA, VCE = 5V, RS = 2kΩ, f = 1kHz, B = 200Hz − − 10 dB .014 (0.35) C B .087 (2.2) Max E .025 (0.65) .051 (1.3) .086 (2.2) Max .051 (1.3) .043 (1.1) .003 (0.1)