AOL1448 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOL1448 uses advanced trench technology to provide excellent RDS(ON) with low gate charge. This device is suitable for high side switch in SMPS and general purpose applications. VDS (V) =30V ID = 36A (VGS = 10V) RDS(ON) < 9.5mΩ (VGS = 10V) RDS(ON) < 14mΩ (VGS = 4.5V) - RoHS Compliant - Halogen Free 100% UIS Tested! 100% R g Tested! UltraSO-8TM Top View D D Bottom tab connected to drain S G G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC=25°C Continuous Drain Current G Pulsed Drain Current C Avalanche Current C Repetitive avalanche energy L=0.1mH TC=25°C Power Dissipation B C TA=25°C Power Dissipation A Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case Alpha & Omega Semiconductor, Ltd. A 9 IAR 20 A EAR 20 mJ 30 2 W 1.3 TJ, TSTG -55 to 175 Symbol t ≤ 10s Steady-State Steady-State W 15 PDSM TA=70°C A 11 PD TC=100°C V 90 IDSM TA=70°C ±20 28 IDM TA=25°C Continuous Drain Current Units V 36 ID TC=100°C Maximum 30 RθJA RθJC Typ 20 48 3.5 °C Max 25 60 5 Units °C/W °C/W °C/W www.aosmd.com AOL1448 Electrical Characteristics (TJ=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250µA, VGS=0V IGSS VGS(th) Gate-Body leakage current VDS=0V, VGS= ±20V Gate Threshold Voltage On state drain current VDS=VGS ID=250µA 1.2 VGS=10V, VDS=5V 90 TJ=55°C 5 VGS=10V, ID=20A Static Drain-Source On-Resistance TJ=125°C VGS=4.5V, ID=20A µA ±100 nA 1.7 2.2 V 7.5 9.5 11.5 14 11 14 mΩ 1 V 30 A pF A gFS Forward Transconductance VDS=5V, ID=20A 43 VSD Diode Forward Voltage IS=1A,VGS=0V 0.7 IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance Units V 1 Zero Gate Voltage Drain Current RDS(ON) Max 30 VDS=30V, VGS=0V IDSS ID(ON) Typ mΩ S 600 750 980 200 245 365 pF 40 70 100 pF 0.4 0.8 1.4 Ω SWITCHING PARAMETERS Qg(10V) Total Gate Charge 9 11.5 14 nC Qg(4.5V) Total Gate Charge 4 5 6 nC 1.6 2 2.4 nC 1.5 2.5 3.5 nC Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time Qrr VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz VGS=10V, VDS=15V, ID=20A VGS=10V, VDS=15V, RL=0.75Ω, RGEN=3Ω IF=20A, dI/dt=500A/µs Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs 5 ns 3 ns 18 ns 3 ns 9 11 13 18 23 28 ns nC A: The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allow s it. B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse ratin g. G. The maximum current rating is limited by bond-wires. H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. Rev1 : Jan-09 COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. www.aosmd.com AOL1448 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 60 90 10V 6V 80 70 7V 40 4V 50 ID(A) ID (A) 60 VDS=5V 50 4.5V 40 3.5 30 20 30 125°C 20 10 VGS=3V 10 25°C 0 0 0 1 2 3 4 0 5 1 16 4 5 Normalized On-Resistance 2 14 RDS(ON) (mΩ ) 3 VGS(Volts) Figure 2: Transfer Characteristics (Note E) VDS (Volts) Fig 1: On-Region Characteristics (Note E) VGS=4.5V 12 10 8 6 VGS=10V 1.8 VGS=10V ID=20A 1.6 17 5 2 10 VGS=4.5V 1.4 1.2 ID=20A 1 0.8 4 0 5 0 10 15 20 25 30 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 25 50 75 100 125 150 175 200 0 Temperature (°C) Figure 4: On-Resistance vs. Junction 18 Temperature (Note E) 35 1.0E+02 ID=20A 30 1.0E+01 40 25 1.0E+00 20 1.0E-01 IS (A) RDS(ON) (mΩ ) 2 15 1.0E-02 125°C 125°C 25°C 1.0E-03 10 1.0E-04 25°C 5 1.0E-05 0 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Alpha & Omega Semiconductor, Ltd. 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) www.aosmd.com AOL1448 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 1200 10 VDS=15V ID=20A 1000 Ciss Capacitance (pF) VGS (Volts) 8 6 4 2 400 Coss Crss 0 0 2 4 6 8 10 Qg (nC) Figure 7: Gate-Charge Characteristics 12 0 RDS(ON) limited 10 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics 100µs 1ms 10ms DC 1 TJ(Max)=175°C TC=25°C 0.1 0.01 0.01 0.1 160 10µs Power (W) 10µs 100 10 5 30 200 1000 ID (Amps) 600 200 0 TJ(Max)=175°C TC=25°C 17 5 2 10 120 80 40 1 VDS (Volts) 10 100 10 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC 0 0.0001 0.001 0.01 0.1 1 0 10 Pulse Width (s) 18 Figure 10: Single Pulse Power Rating Junction-toCase (Note F) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) Zθ JC Normalized Transient Thermal Resistance 800 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 40 RθJC=5°C/W 1 PD 0.1 Ton T Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Alpha & Omega Semiconductor, Ltd. www.aosmd.com AOL1448 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 35 TA=25°C 30 80 60 Power Dissipation (W) IAR(A) Peak Avalanche Current 100 TA=100°C TA=150°C 40 TA=125°C 20 25 20 15 10 5 0 0 0.000001 0 0.00001 0.0001 0.001 Time in avalanche, tA (s) Figure 12: Single Pulse Avalanche capability (Note C) 25 50 75 100 125 175 TCASE (°C) Figure 13: Power De-rating (Note F) 10000 40 35 TA=25°C 1000 30 25 Power (W) Current rating ID(A) 150 20 15 17 5 2 10 100 10 10 5 1 0 0 25 50 75 100 125 150 0 175 Zθ JA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 1 0 0 0.01 0.1 1 10 100 1000 0 Pulse Width (s) 18 Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H) TCASE (°C) Figure 14: Current De-rating (Note F) In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 40 RθJA=60°C/W 0.1 PD 0.01 Single Pulse Ton 0.001 0.00001 0.0001 0.001 0.01 0.1 1 T 10 100 1000 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H) Alpha & Omega Semiconductor, Ltd. www.aosmd.com AOL1448 Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds Vgs 90% + Vdd DUT VDC - Rg 10% Vgs Vgs t d(on) tr t d(off) t on tf t off Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 EAR= 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vgs Vds Isd L Vgs Ig Alpha & Omega Semiconductor, Ltd. Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.aosmd.com