ON NTJS3151P Trench power mosfet Datasheet

NTJS3151P, NVJS3151P
Trench Power MOSFET
12 V, 3.3 A, Single P−Channel,
ESD Protected SC−88
Features
•
•
•
•
•
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Leading Trench Technology for Low RDS(ON) Extending Battery Life
SC−88 Small Outline (2x2 mm, SC70−6 Equivalent)
Gate Diodes for ESD Protection
NV Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
V(BR)DSS
RDS(on) Typ
ID Max
45 mW @ −4.5 V
−12 V
−3.3 A
67 mW @ −2.5 V
133 mW @ −1.8 V
SC−88 (SOT−363)
Applications
• High Side Load Switch
• Cell Phones, Computing, Digital Cameras, MP3s and PDAs
D
1
6
D
D
2
5
D
G
3
4
S
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol
Value
Units
Drain−to−Source Voltage
VDSS
−12
V
Gate−to−Source Voltage
VGS
±12
V
ID
−2.7
A
Continuous Drain
Current (Note 1)
Power Dissipation
(Note 1)
Steady
State
TA = 25 °C
TA = 85 °C
−2.0
t≤5s
TA = 25 °C
−3.3
Steady
State
TA = 25 °C
PD
tp = 10 ms
Top View
3 kW
G
0.625
W
IDM
−8.0
A
TJ,
TSTG
−55 to
150
°C
Source Current (Body Diode)
IS
−0.8
A
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
TL
260
°C
Pulsed Drain Current
Operating Junction and Storage Temperature
S
MARKING DIAGRAM &
PIN ASSIGNMENT
D
1
THERMAL RESISTANCE RATINGS (Note 1)
Parameter
D
Symbol
Max
Units
Junction−to−Ambient – Steady State
RqJA
200
°C/W
Junction−to−Ambient − t ≤ 5 s
RqJA
141
Junction−to−Lead – Steady State
RqJL
102
SC−88/SOT−363
CASE 419B
STYLE 28
XXX
M
G
S
6
XXX MG
G
1
D
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Surface mounted on FR4 board using 1 in sq pad size
(Cu area = 1.127 in sq [1 oz] including traces).
D
D
G
= Device Code
= Date Code
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 4 of this data sheet.
© Semiconductor Components Industries, LLC, 2016
June, 2016 − Rev. 4
1
Publication Order Number:
NTJS3151/D
NTJS3151P, NVJS3151P
ELECTRICAL CHARACTERISTICS (TJ=25°C unless otherwise stated)
Symbol
Test Condition
Min
Drain−to−Source Breakdown Voltage
V(BR)DSS
VGS = 0 V, ID = −250 mA
−12
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS/TJ
Parameter
Typ
Max
Unit
OFF CHARACTERISTICS
Zero Gate Voltage Drain Current
IDSS
Gate−to−Source Leakage Current
IGSS
V
10
VGS = −9.6 V,
VDS = 0 V
TJ = 25°C
mV/°C
−1.0
TJ = 125°C
mA
−2.5
VDS = 0 V, VGS = ±4.5 V
±1.5
mA
VDS = 0 V, VGS = ±12 V
±10
mA
−1.2
V
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
VGS(TH)
Negative Threshold Temperature
Coefficient
VGS(TH)/TJ
Drain−to−Source On Resistance
RDS(on)
Forward Transconductance
gFS
VGS = VDS, ID = 100 mA
−0.40
3.4
mV/°C
VGS = −4.5 V, ID = −3.3 A
45
60
VGS = −2.5 V, ID = −2.9 A
67
90
VGS = −1.8 V, ID = −1.0 A
133
160
VGS = −10 V, ID = −3.3 A
15
S
850
pF
mW
CHARGES AND CAPACITANCES
CISS
Input Capacitance
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
Total Gate Charge
VGS = 0 V, f = 1.0 MHz,
VDS = −12 V
170
110
QG(TOT)
nC
8.6
VGS = −4.5 V, VDS = −5.0 V,
ID = −3.3 A
Gate−to−Source Charge
QGS
Gate−to−Drain Charge
QGD
2.2
RG
3000
W
td(ON)
0.86
ms
Gate Resistance
1.3
SWITCHING CHARACTERISTICS (Note 3)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
tr
td(OFF)
VGS = −4.5 V, VDD = −6.0 V,
ID = −1.0 A, RG = 6.0 W
tf
1.5
3.5
3.9
DRAIN−SOURCE DIODE CHARACTERISTICS (Note 2)
Forward Diode Voltage
VSD
VGS = 0 V,
IS = −3.3 A
TJ = 25°C
−0.85
TJ = 125°C
−0.7
−1.2
V
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Pulse Test: pulse width ≤ 300ms, duty cycle ≤ 2%.
3. Switching characteristics are independent of operating junction temperatures.
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2
NTJS3151P, NVJS3151P
TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted)
8
−ID, DRAIN CURRENT (AMPS)
−ID, DRAIN CURRENT (AMPS)
8
TJ = 25°C
VGS = −4.5 V
VGS = −3.4 V
6
−2 V
−2.4 V
4
2
−1.6 V
0
−1.4 V
−1.2 V
1
0
2
4
3
VDS ≤ −12 V
6
4
125°C
2
25°C
TJ = −55°C
0
5
0
0.5
1
1.5
2
2.5
3
3.5
4 4.5
−VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
−VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
Figure 1. On−Region Characteristics
0.1
VGS = −4.5 V
0.075
TJ = 125°C
0.05
TJ = 25°C
TJ = −55°C
0.025
0
0.5
1.5
2.5
3.5
4.5
5.5
6.5
7.5
−ID, DRAIN CURRENT (AMPS)
0.5
0.4
0.3
0.2
0
0.5
1.5
2.5
3.5
4.5
5.5
6.5
7.5
−ID, DRAIN CURRENT (AMPS)
100000
VGS = 0 V
ID = −3.3 A
VGS = −4.5 V
−IDSS, LEAKAGE CURRENT (nA)
RDS(on), DRAIN−TO−SOURCE
RESISTANCE (NORMALIZED)
VGS = −4.5 V
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
2.0
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
−50
VGS = −2.5 V
0.1
Figure 3. On−Resistance vs. Drain Current and
Temperature
1.8
TJ = 25°C
VGS = −1.8 V
10000
TJ = 150°C
1000
TJ = 125°C
100
−25
0
25
50
75
100
125
150
TJ, JUNCTION TEMPERATURE (°C)
2
8
4
6
10
−VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
0
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12
NTJS3151P, NVJS3151P
−VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted)
1600
TJ = 25°C
VGS = 0 V
C, CAPACITANCE (pF)
1400
1200
1000
Ciss
800
600
400
Coss
200
Crss
0
0
4
2
6
8
12
10
4.5
QT
4
3.5
3
2.5
Q1
2
1.5
1
ID = −3.3 A
TJ = 25°C
0.5
0
2
0
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 7. Capacitance Variation
8
4
6
Qg, TOTAL GATE CHARGE (nC)
10
Figure 8. Gate−to−Source Voltage vs. Total
Gate Charge
10000
−IS, SOURCE CURRENT (AMPS)
4
tf
td(off)
t, TIME (ns)
Q2
tr
1000
td(on)
VDD = −6.0 V
ID = −1.0 A
VGS = −4.5 V
100
VGS = 0 V
TJ = 25°C
3
2
1
0
1
10
100
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8 0.9
RG, GATE RESISTANCE (OHMS)
−VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
ORDERING INFORMATION
Device
Marking
NTJS3151PT1G
TJ
NTJS3151PT2G
TJ
NVJS3151PT1G*
VTJ
Package
Shipping†
SC−88
(Pb−Free)
3000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
*NV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP
Capable.
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4
NTJS3151P, NVJS3151P
PACKAGE DIMENSIONS
SC−88/SC70−6/SOT−363
CASE 419B−02
ISSUE Y
2X
aaa H D
D
A
D
6
5
GAGE
PLANE
4
L
L2
E1
E
1
2
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMENSIONS D AND E1 DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS. MOLD FLASH, PROTRUSIONS, OR GATE BURRS SHALL NOT EXCEED 0.20 PER END.
4. DIMENSIONS D AND E1 AT THE OUTERMOST EXTREMES OF
THE PLASTIC BODY AND DATUM H.
5. DATUMS A AND B ARE DETERMINED AT DATUM H.
6. DIMENSIONS b AND c APPLY TO THE FLAT SECTION OF THE
LEAD BETWEEN 0.08 AND 0.15 FROM THE TIP.
7. DIMENSION b DOES NOT INCLUDE DAMBAR PROTRUSION.
ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.08 TOTAL IN
EXCESS OF DIMENSION b AT MAXIMUM MATERIAL CONDITION. THE DAMBAR CANNOT BE LOCATED ON THE LOWER
RADIUS OF THE FOOT.
H
DETAIL A
3
aaa C
2X
bbb H D
2X 3 TIPS
e
B
6X
DIM
A
A1
A2
b
C
D
E
E1
e
L
L2
aaa
bbb
ccc
ddd
b
ddd
TOP VIEW
M
A2
C A-B D
DETAIL A
A
6X
ccc C
A1
SIDE VIEW
C
SEATING
PLANE
c
MILLIMETERS
MIN
NOM MAX
−−−
−−−
1.10
0.00
−−−
0.10
0.70
0.90
1.00
0.15
0.20
0.25
0.08
0.15
0.22
1.80
2.00
2.20
2.00
2.10
2.20
1.15
1.25
1.35
0.65 BSC
0.26
0.36
0.46
0.15 BSC
0.15
0.30
0.10
0.10
END VIEW
STYLE 28:
PIN 1. DRAIN
2. DRAIN
3. GATE
4. SOURCE
5. DRAIN
6. DRAIN
RECOMMENDED
SOLDERING FOOTPRINT*
6X
6X
0.30
INCHES
NOM MAX
−−− 0.043
−−− 0.004
0.035 0.039
0.008 0.010
0.006 0.009
0.078 0.086
0.082 0.086
0.049 0.053
0.026 BSC
0.010 0.014 0.018
0.006 BSC
0.006
0.012
0.004
0.004
MIN
−−−
0.000
0.027
0.006
0.003
0.070
0.078
0.045
0.66
2.50
0.65
PITCH
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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NTJS3151P/D