Diode Semiconductor Korea Dual series switching diode BAV99 FEATURES Pb z Fast switching speed Max:6ns z High conductance z Connected in series z Surface mount package ideally suited Lead-free for automatic insertion APPLICATIONS z Small signal switching SOT-23 ORDERING INFORMATION Type No. Marking Package Code BAV99 A7 SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Parameter Symbol Value Unit Repetitive peak reverse voltage VRRM 85 V Continuous Reverse voltage VR 75 V IFSM 4 1 0.5 A Forward continuous current single diode loaded double diodes loaded IF 215 125 mA Non-Repetitive peak forward current IFRM 450 mA Power dissipation Pd 250 mW Thermal resistance junction to ambient air RθJA 500 ℃/W Operating and storage temperature range Tj,TSTG -65 to 150 ℃ Peak forward surge current @t=1.0μs @t=1.0ms @t=1.0s www.diode.kr Diode Semiconductor Korea Dual series switching diode BAV99 ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Parameter Reverse breakdown voltage Symbol V(BR) Test conditions IR= 2.5μA MIN MAX 75 UNIT V IR VR=25V VR=75V VR=25V Tj=150℃ VR=75V Tj=150℃ 35 1 30 50 nA μA μA μA Forward voltage VF IF=1mA IF=10mA IF=50mA IF=150mA 715 855 1000 1250 mV Diode capacitance CD VR=0V 1.5 pF Reverse recovery time trr IF=IR=10mA, Irr=0.1×IR,RL=100Ω 4 nS Reverse voltage leakage current f=1MHz TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified www.diode.kr Diode Semiconductor Korea Dual series switching diode BAV99 www.diode.kr Diode Semiconductor Korea Dual series switching diode BAV99 PACKAGE OUTLINE Plastic surface mounted package SOT-23 SOT-23 Dim Min Max A 2.85 2.95 B 1.25 1.35 C 1.0Typical D 0.37 0.43 E 0.35 0.48 G 1.85 1.95 H 0.02 0.1 J K 0.1Typical 2.35 2.45 All Dimensions in mm SOLDERING FOOTPRINT Unit : mm PACKAGE INFORMATION Device Package Shipping BAV99 SOT-23 3000/Tape&Reel www.diode.kr