Hermetic Infrared Emitting Diode OP230 Series Features: Focused and non‐focused op cal light pa ern Enhanced temperature range TO‐46 herme cally sealed package Mechanically and spectrally matched to other Optek devices Choice of power ranges Choice of narrow or wide irradiance pa ern Descrip on: Each device in this series is a gallium aluminum arsenide (GaAIAs) infrared emi ng diode, mounted in a herme c metal TO‐ 46 housing. The gallium aluminum arsenide feature provides a higher radiated output than gallium arsenide at the same forward current. Each OP231, OP232, OP233, OP234 and OP235 device is lensed to provide a narrow beam angle (18°) between half power points. The 890 nm wavelength closely matches the spectral response of silicon phototransistors, while the narrow beam angle – combined with the specified radiant intensity of the OP231 series – facilitates easy design in beam interrupt applica ons in conjunc on with the OP800 or OP598 series photosensors. The OP231 series is mechanically and spectrally matched to OP800, OP593 and OP598 phototransistors. Each OP231W, OP232W, OP233W, OP234W and OP235W device is lensed to provide a wide beam angle (50°) between half power points. The 890 nm wavelength closely matches the spectral response of silicon photo‐transistors, while the wide beam angle provides rela vely even illumina on over a large area. The OP231W is mechanically and spectrally matched to the OP800WSL and OP830SL series devices. Please refer to Applica on Bulle ns 208 and 210 for addi onal design informa on and reliability (degrada on) data. Custom electrical, wire and cabling and connectors are available. Contact your local representa ve or OPTEK for more informa on. Applica ons: Non‐contact reflec ve object sensor Assembly line automa on Machine automa on Machine safety End of travel sensor Door sensor Part Number OP231 OP232 OP233 OP234 OP235 OP231W OP232W OP233W OP234W OP235W General Note TT Electronics reserves the right to make changes in product specification without notice or liability. All information is subject to TT Electronics’ own data and is considered accurate at time of going to print. © TT electronics plc Ordering Informa on Output Power LED Peak (mW/cm2) Wavelength Min / Max 1.5 / NA 2.0 / 6.0 890 nm 3.0 / NA 5.0 / NA 850 nm 6.0 / NA 1.5 / NA 890 nm 3.5 / 7.0 5.0 / NA 5.0 / NA 850 nm 6.0 / NA Total Beam Angle Lead Length 18° 0.50" 50° OPTEK Technology, Inc. 1645 Wallace Drive, Carrollton, TX 75006|Ph: +1 972 323 2200 www.optekinc.com | www.ttelectronics.com Issue B 07/2016 Page 1 Hermetic Infrared Emitting Diode OP230 Series OP231, OP232, OP233, OP234, OP235 Anode Cathode DIMENSIONS ARE IN: [MILLIMETERS] INCHES OP231W, OP232W, OP233W, OP234W, OP235W Anode Cathode DIMENSIONS ARE IN: [MILLIMETERS] INCHES Pin # 1 2 LED Anode Cathode Absolute Maximum Ratings (TA=25°C unless otherwise noted) Storage Temperature Range ‐65o C to +150o C Operating Temperature Range ‐65o C to +125o C Reverse Voltage 2.0 A Continuous Forward Current 100 mA Peak Forward Current 10.0 A Lead Soldering Temperature [1/16 inch (1.6 mm) from case for 5 seconds with soldering iron] 260° C(1)(2) Power Dissipation 200 mW(3) General Note TT Electronics reserves the right to make changes in product specification without notice or liability. All information is subject to TT Electronics’ own data and is considered accurate at time of going to print. © TT electronics plc OPTEK Technology, Inc. 1645 Wallace Drive, Carrollton, TX 75006|Ph: +1 972 323 2200 www.optekinc.com | www.ttelectronics.com Issue B 07/2016 Page 2 Hermetic Infrared Emitting Diode OP230 Series Electrical Characteris cs (TA = 25°C unless otherwise noted) SYMBOL PARAMETER MIN TYP MAX 1.5 2.0 3.0 5.0 6.0 ‐ ‐ ‐ ‐ ‐ ‐ 6.0 ‐ ‐ ‐ 1.5 3.5 5.0 5.0 6.0 ‐ ‐ ‐ ‐ ‐ PO Radiant Power Output OP231 OP232 OP233 ‐ ‐ ‐ VF Forward Voltage IR UNITS TEST CONDITIONS Input Diode Apertured Radiant Incidence OP231 OP232 OP233 OP234 OP235 mW/ cm2 OP231 Series IF = 100 mA(3 )(4) Aperture = 0.250” Distance = 1.429” ‐ 7.0 ‐ ‐ ‐ mW/ cm2 OP231W Series IF = 100 mA(3 )(4) Aperture = 0.250” Distance = 0.466” 6.0 8.0 10.0 ‐ ‐ ‐ mW ‐ ‐ 2.0 V IF = 100 mA (3) Reverse Current ‐ ‐ 100 µA VR= 2.0 V λP Wavelength at Peak Emission OP231, OP232, OP233 OP234, OP235 ‐ ‐ 890 850 ‐ ‐ nm IF = 10 mA β Spectral Bandwidth between Half Power Points ‐ 80 ‐ nm IF = 10 mA Spectral Shi with Temperature ‐ +0.30 ‐ nm/°C IF = Constant Emission Angle at Half Power Points OP231 ‐ OP235 OP231W ‐ OP231W ‐ ‐ 18 50 ‐ ‐ Degree IF = 100 mA tr Output Rise Time ‐ 500 ‐ ns tf Output Fall Time ‐ 250 ‐ ns EE(APTa) OP231W OP232W OP233W OP234W OP235W ∆λP /∆T θHP IF = 100 mA(3 )(4) IF(PK)=100 mA, PW=10 µs, and D.C.=10.0% Notes: 1. RMA flux is recommended. Dura on can be extended to 10 seconds maximum when flow soldering. 2. Derate linearly 2.0 mW/° C above 25° C. 3. Measurement made with 100 µs pulse measured at the trailing edge of the pulse with a duty cycle of 0.1% and an IF = 100 mA. 4. For the OP231 series, EE(APT) is a measurement of the average radiant intensity within the cone formed by the measurement surface, a radius of 1.429” (36.30 mm) measured from the lens side of the tab to the sensing surface and a sensing surface of 0.250” (6.35 mm) in diameter forming a 10° cone. For the OP231W series, EE(APT) is a measurement of the average radiant intensity within the cone formed by the measurement surface, a radius of 0.466” (11.84 mm) measured from the lens side of the tab to the sensing surface and a sensing surface of 0.250” (6.35 mm) in diameter forming a 10° cone. EE(APT) is not necessarily uniform within the measured area. General Note TT Electronics reserves the right to make changes in product specification without notice or liability. All information is subject to TT Electronics’ own data and is considered accurate at time of going to print. © TT electronics plc OPTEK Technology, Inc. 1645 Wallace Drive, Carrollton, TX 75006|Ph: +1 972 323 2200 www.optekinc.com | www.ttelectronics.com Issue B 07/2016 Page 3 Hermetic Infrared Emitting Diode OP230 Series OP231, OP232, OP233 (including “W” devices) Forward Voltage vs Forward Current vs Temperature Optical Power vs IF vs Temperature 3.5 1.8 Normalized at 50 mA and 20° C 1.7 3.0 -60° C -40° C -20° C 0° C 20° C 40° C 60° C 80° C 100° C 120° C Normalized Optical Power Typical Forward Voltage (V) 1.6 1.5 1.4 1.3 -60° C -40° C -20° C 0° C 20° C 40° C 60° C 80° C 100° C 120°C 1.2 1.1 1.0 2.5 2.0 1.5 1.0 0.5 0.0 0.9 0 10 20 30 40 50 60 70 80 90 0 100 10 20 30 40 50 60 70 80 Forward Current (mA) Forward Current IF (mA) Distance vs Output Power vs Forward Current Relative Radiant Intensity vs. Angular Displacement 90 100 1.0 6 Normalized at 1" and 50 mA 0.9 5 0.8 10 mA 20 mA 30 mA 40 mA 50 mA 60 mA 70 mA 80 mA 90 mA 100 mA 4 3 2 Relative Radiant Intensity Normalized Output Power Forward Current 0.7 0.6 0.5 0.4 0.3 0.2 1 0.1 0.0 0 0.2 '' 0.4 '' 0.6 '' 0.8 '' 1.0 '' 1.2 '' 1.4 '' 1.6 '' 1.8 '' 2.0 '' Distance (inches) General Note TT Electronics reserves the right to make changes in product specification without notice or liability. All information is subject to TT Electronics’ own data and is considered accurate at time of going to print. © TT electronics plc -20 -15 -10 -5 0 5 10 15 20 Angular Displacement (Degrees) OPTEK Technology, Inc. 1645 Wallace Drive, Carrollton, TX 75006|Ph: +1 972 323 2200 www.optekinc.com | www.ttelectronics.com Issue B 07/2016 Page 4 Hermetic Infrared Emitting Diode OP230 Series OP234, OP234W Forward Voltage vs Forward Current vs Temperature Optical Power vs Forward Current vs Temperature 2.5 1.8 Normalized at 50 mA and 20°C -60° C -40° C -20° C 0° C 20° C 40° C 60° C 80° C 100° C 120° C 2.0 Relative Output Power Typical Forward Voltage (V) 1.6 1.4 1.2 -60° C -40° C -20° C 0° C 20° C 40° C 60° C 80° C 100° C 120° C 1.0 0.8 1.5 1.0 0.5 0.0 0.6 0 5 10 15 20 25 30 35 40 45 0 50 Forward Current (mA) 10 20 30 40 50 60 70 80 90 100 Forward Current IF (mA) Relative Radiant Intensity vs Angular Displacement Distance vs Output Power vs Forward Current 1.2 10.00 Normalized at 1.0" and 50 mA Relative Radiant Intensity Normalized Output Power 1.0 1.00 Forward Current 0.10 10 mA 20 mA 30 mA 40 mA 50 mA 60 mA 80 mA 100 mA 120 mA 0.4 0.0 0.7 '' 1.2 '' 1.7 '' Distance (inches) General Note TT Electronics reserves the right to make changes in product specification without notice or liability. All information is subject to TT Electronics’ own data and is considered accurate at time of going to print. © TT electronics plc 0.6 0.2 0.01 0.2 '' 0.8 -80 -30 20 70 Angular Displacement (Degrees) OPTEK Technology, Inc. 1645 Wallace Drive, Carrollton, TX 75006|Ph: +1 972 323 2200 www.optekinc.com | www.ttelectronics.com Issue B 07/2016 Page 5 Hermetic Infrared Emitting Diode OP230 Series OP235, OP235W Forward Voltage vs Forward Current vs Temperature Optical Power vs Forward Current vs Temperature 1.8 2.5 Normalized at 50 mA and 20° C 1.6 -60°C -40°C -20°C 0°C 20°C 40°C 60°C 80°C 100°C 120°C Relative Output Power Typical Forward Voltage (V) 2.0 1.4 1.2 -60°C -40°C -20°C 0°C 20°C 40°C 60°C 80°C 100°C 120°C 1.0 0.8 1.5 1.0 0.5 0.6 0.0 0 5 10 15 20 25 30 35 40 45 50 Forward Current (mA) 0 10 20 30 40 50 60 70 80 90 100 Forward Current IF (mA) Distance vs Output Power vs Forward Current 20 18 Normalized Output Power 16 Normalized at 1.0" and 50 mA Forward Current 10 mA 20 mA 30 mA 40 mA 50 mA 60 mA 80 mA 100 mA 120 mA 14 12 10 8 6 4 2 0 0.2 '' 0.4 '' 0.6 '' 0.8 '' 1.0 '' 1.2 '' 1.4 '' 1.6 '' 1.8 '' 2.0 '' Distance (inches) General Note TT Electronics reserves the right to make changes in product specification without notice or liability. All information is subject to TT Electronics’ own data and is considered accurate at time of going to print. © TT electronics plc OPTEK Technology, Inc. 1645 Wallace Drive, Carrollton, TX 75006|Ph: +1 972 323 2200 www.optekinc.com | www.ttelectronics.com Issue B 07/2016 Page 6